IMAGE SENSOR

Abstract

An image sensor includes a pixel division structure including a core and a lateral pattern structure on a sidewall of the core, the pixel division structure extending through a substrate in a vertical direction perpendicular to an upper surface of the substrate, the pixel division structure defining unit pixel regions including unit pixels. The image sensor includes a light sensing element in each of the unit pixel regions, a planarization layer on the substrate, a color filter array layer on the planarization layer, the color filter array layer including color filters, and a microlens on the color filter array layer. The lateral pattern structure includes a second lateral pattern on the sidewall of the core and a first lateral pattern on an outer sidewall of the second lateral pattern, the first lateral pattern includes silicon oxide, and the second lateral pattern includes silicon nitride containing carbon.

Description

Claims

1. An image sensor comprising: a pixel division structure including a core and a lateral pattern structure on a sidewall of the core, the pixel division structure extending through a substrate in a vertical direction, the vertical direction perpendicular to an upper surface of the substrate, the pixel division structure defining unit pixel regions, and the unit pixel regions including unit pixels;a light sensing element in each of the unit pixel regions;a planarization layer on the substrate;a color filter array layer on the planarization layer, the color filter array layer including color filters; anda microlens on the color filter array layer,wherein the lateral pattern structure includes a second lateral pattern on the sidewall of the core anda first lateral pattern on an outer sidewall of the second lateral pattern,the first lateral pattern includes silicon oxide, and the second lateral pattern includes silicon nitride containing carbon.

2. The image sensor of claim 1, wherein the second lateral pattern includes silicon carbonitride (SiCN), silicon oxycarbonitride (SiOCN), or silicon borocarbonitride (SiBCN).

3. The image sensor of claim 2, wherein the carbon included in the second lateral pattern has an atomic percentage in a range of 1at% to 20at%.

4. The image sensor of claim 1, wherein the lateral pattern structure further includes a third lateral pattern between the sidewall of the core and the second lateral pattern.

5. The image sensor of claim 4, wherein the third lateral pattern includes silicon oxide.

6. The image sensor of claim 1, wherein the core includes: a first filling pattern including polysilicon doped with n-type impurities or p-type impurities; anda second filling pattern inside the first filling pattern, a sidewall of the second filling pattern surrounded by the first filling pattern, and the second filling pattern including polysilicon.

7. The image sensor of claim 6, wherein a width of the first filling pattern increases from a top of the first filling pattern towards a bottom of the first filling pattern.

8. The image sensor of claim 1, wherein the core and the lateral pattern structure define a first filling pattern structure, andthe pixel division structure further includes a second filling pattern structure under the first filling pattern structure.

9. The image sensor of claim 8, wherein a width of the second filling pattern structure is greater than a width of the first filling pattern structure.

10. An image sensor comprising: a pixel division structure extending through a substrate in a vertical direction, the vertical direction substantially perpendicular to an upper surface of the substrate, the pixel division structure including a core extending in the vertical direction and a lateral pattern structure on a sidewall of the core, the pixel division structure defining unit pixel regions, the unit pixel regions including unit pixels;a light sensing element in each of the unit pixel regions;a planarization layer on the substrate;a color filter array layer on the planarization layer, the color filter array layer including color filters; anda microlens on the color filter array layer,wherein the lateral pattern structure includes a second lateral pattern on the sidewall of the core anda first lateral pattern on an outer sidewall of the second lateral pattern,the core includes polysilicon doped with p-type or n-type impurities, the first lateral pattern includes silicon oxide,the second lateral pattern includes silicon oxide, and the second lateral pattern includes silicon carbonitride (SiCN), silicon oxycarbonitride (SiOCN), or silicon borocarbonitride (SiBCN).

11. The image sensor of claim 10, wherein carbon included in the second lateral pattern has an atomic percentage in range of 1at% to 20at%.

12. The image sensor of claim 10, wherein the lateral pattern structure further includes a third lateral pattern between the sidewall of the core and the second lateral pattern.

13. The image sensor of claim 12, wherein the third lateral pattern includes silicon oxide.

14. The image sensor of claim 10, wherein the core includes: a first filling pattern including polysilicon doped with n-type or p-type impurities; anda second filling pattern inside the first filling pattern, a sidewall of the second filling pattern surrounded by the first filling pattern, and the second filling pattern including polysilicon.

15. The image sensor of claim 14, wherein a width of the first filling pattern increases from a top of the first filling pattern towards a bottom of the first filling pattern.

16. The image sensor of claim 10, wherein the core and the lateral pattern structure define a first filling pattern structure, andthe pixel division structure further includes a second filling pattern structure under the first filling pattern structure.

17. An image sensor comprising: a first substrate defining a first region, a second region, a third region and a fourth region inside the first substrate and a space under and over the first substrate, the second region surrounding the first region, the third region surrounding the second region, and the fourth region surrounding the third region;a first insulating interlayer on the first substrate, the first insulating interlayer containing first wirings in the third region;a second insulating interlayer on the first insulating interlayer, the second insulating interlayer containing second wirings in the third region;a second substrate on the second insulating interlayer;a pixel division structure in the second substrate in the first and second regions, the pixel division structure including a core and a lateral pattern structure on a sidewall of the core, the pixel division structure defining unit pixel regions, the unit pixel regions including unit pixels;a light sensing element in each of the unit pixel regions of the second substrate;a transfer gate (TG) extending through a lower portion of the second substrate, the TG contacting the light sensing element;a floating diffusion (FD) region at a lower portion of the second substrate adjacent to the TG;a lower planarization layer on the second substrate;a color filter array layer on the lower planarization layer, the color filter array layer including color filters;an interference blocking structure between the color filters; anda microlens on the color filter array layer,wherein the lateral pattern structure includes a second lateral pattern on the sidewall of the core anda first lateral pattern on an outer sidewall of the second lateral pattern,the first lateral pattern includes silicon oxide, and the second lateral pattern includes silicon nitride containing carbon.

18. The image sensor of claim 17, wherein the first region is an active pixel region including active pixels,the second region is an optical black (OB) pixel region including OB pixels,the third region is a stack region including a through via structure, andthe fourth region is a pad region including a pad.

19. The image sensor of claim 18, further comprising: a light blocking metal pattern on the lower planarization layer in the second region;the through via structure extending through the lower planarization layer, the second substrate, the second insulating interlayer and an upper portion of the first insulating interlayer to commonly contact the first and second wirings in the third region; andthe pad extending through the lower planarization layer and an upper portion of the second substrate in the fourth region.

20. The image sensor of claim 17, wherein the second lateral pattern includes silicon carbonitride (SiCN), silicon oxycarbonitride (SiOCN), or silicon borocarbonitride (SiBCN).