Claims
- 1. A method for etching a semiconductor device, comprising the steps of:
- placing a semiconductor device in a fabrication reactor chamber, said semiconductor device comprising a BARC layer and a nitride layer;
- etching a portion of said BARC layer substrate until reaching a first set point in the fabrication reactor; and
- etching a portion of said nitride layer semiconductor substrate in-situ said fabrication reactor immediately following said step for performing said BARC layer etching step.
- 2. The method of claim 1, further comprising the step of etching said BARC layer at a power of approximately 400 watts and said nitride etch process performing step occurs at a power of approximately 250 watts, further performing said BARC layer etching step and said nitride layer etching step at a pressure of approximately 55 militorr.
- 3. The method of claim 1, further comprising the step of performing said BARC layer etching step using the gases of CF.sub.4, CHF.sub.3, O.sub.2 and Argon.
- 4. The method of claim 1, further comprising the step of performing said nitride layer etching step using the gases of CHF.sub.3, O.sub.2, and Argon.
Parent Case Info
This is a Non Provisional application filed under 35 USC 119(e) and claims priority of prior provisional, U.S. Ser. No. 60/035,268 of inventor Yang, et al, filed Dec. 12, 1996.
US Referenced Citations (13)