Claims
- 1. An InP single crystal substrate characterized in that, the oxygen atom concentration in the InP single crystal substrate is within the range of 1×1017 atoms/cm3 to 1×1018 atoms/cm3.
- 2. The InP single crystal substrate according to claim 1 wherein, the off angle of the surface orientation of the InP single crystal substrate is less than ±0.03°.
- 3. The InP single crystal substrate according to claim 2 wherein the surface orientation of the InP single crystal substrate is <100>.
- 4. A production process of the InP single crystal substrate according to any of claims 1 through 3 comprising: growing InP single crystal using a raw material containing indium oxide and/or phosphorous oxide followed by processing the grown single crystal on a substrate.
- 5. A production process of the InP single crystal substrate according to any of claims 1 through 3 comprising: adding indium oxide and/or phosphorous oxide to an encapsulant in the form of B2O3, growing InP single crystal according to the liquid encapsulated Czochralski method, and then processing the grown single crystal on a substrate.
- 6. An InP single crystal substrate fabricated using the production process according to claim 4 or 5.
- 7. A laser diode or photo diode fabricated using the InP single crystal substrate according to claims 1 through 3 or 6.
- 8. An epitaxial wafer for the laser diode or photodiode fabricated using the InP single crystal substrate according to claims 1 through 3 or 6.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2000-300027 |
Sep 2000 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit pursuant to 35 U.S.C. §119 (e)(1) of U.S. Provisional Application No. 60/311,117 filed Aug. 10, 2001.
PCT Information
Filing Document |
Filing Date |
Country |
Kind |
PCT/JP01/08436 |
9/27/2001 |
WO |
|