This is a divisional of U.S. Ser. No. 09/428,820, now U.S. Pat. No. 6,482,711, filed on Oct. 28, 1999.
Number | Name | Date | Kind |
---|---|---|---|
4395722 | Esaki et al. | Jul 1983 | A |
5606185 | Nguyen et al. | Feb 1997 | A |
5610086 | Liu et al. | Mar 1997 | A |
5663583 | Matloubian et al. | Sep 1997 | A |
5721161 | Nguyen et al. | Feb 1998 | A |
5831337 | Sato | Nov 1998 | A |
5907165 | Hamm et al. | May 1999 | A |
5920231 | Ando et al. | Jul 1999 | A |
6133593 | Boos et al. | Oct 2000 | A |
6232624 | Matloubian et al. | May 2001 | B1 |
20030062538 | Kudo et al. | Apr 2003 | A1 |
Number | Date | Country |
---|---|---|
0 746 035 | Dec 1996 | EP |
57 197877 | Dec 1982 | JP |
02 189931 | Jul 1990 | JP |
03 088369 | Jul 1991 | JP |
03 241840 | Oct 1991 | JP |
63 281464 | Nov 1998 | JP |
Entry |
---|
Behet, M., et al., “MOVPE growth of III-V compounds for optoelectronic and electronic applications,” XP004017728, Microelectronics Journal, vol. 27, No. 4, Great Britain, pp. 297-334 (Jul. 1, 1996). |
Dodd, Paul E., et al., “Demonstration of npn InAs Bipolar Transistors with Inverted Base Doping,” XP000584763, IEEE Electron Device Letters, vol. 17, No. 4, New York, pp. 166-168 (Apr. 1, 1996). |