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6-318785 | Dec 1994 | JPX | |
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4618872 | Baliga | Oct 1986 | |
4782372 | Nakagawa et al. | Nov 1988 | |
4963951 | Adler et al. | Oct 1990 | |
5355003 | Tomomatsu | Oct 1994 | |
5512774 | Nakagawa et al. | Apr 1996 |
Number | Date | Country |
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4-320377 | Nov 1992 | JPX |
6-112494 | Apr 1994 | JPX |
Entry |
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Proc. of the 6th Internat. Symposium on Power Semiconductor Devices & IC's, pp. 399-403, May 31-Jun. 2, 1994, T. Matsudai, et al., "Thin SOI IGBT Leakage Current and a New Device Structure For High Temperature Operation". |