Claims
- 1. A multilevel interconnect structure comprising
- a first level of interconnect arranged on a semiconductor substrate;
- a first dielectric layer arranged upon said first level of interconnect, said first dielectric layer having a trench extending downwardly from an upper surface of said dielectric, said trench partially filled with a conductive material such that an upper surface of said conductive material is vertically below the upper surface of said first dielectric layer, said conductive material forming a local connector;
- a second dielectric layer formed on said local connector such that said second dielectric layer is laterally defined within said trench; and
- first and second conductors of a second level of interconnect formed on said first dielectric layer such that a lower surface of said first and second conductors is vertically displaced above the upper surface of said local connector, and said first and second conductors are horizontally displaced from said local connector by a lateral distance whereby said local connector is displaced from said first and second conductors by a distance of approximately the square root of the sum of said lateral distance squared and said vertical distance squared.
- 2. The interconnect structure of claim 1, wherein said first dielectric layer has one or more contact tunnels extending from one or more of said first and second conductors through said first dielectric layer to said first level of interconnect.
- 3. The interconnect structure of claim 1, wherein said first dielectric layer has one or more contact tunnels extending from a third conductor of said second level of interconnect through said first dielectric layer to said local connector.
- 4. The interconnect structure of claim 1, wherein said first and second levels of interconnect comprise aluminum.
- 5. The interconnect structure of claim 1, wherein said conductive material comprises tungsten.
- 6. The interconnect structure of claim 1, wherein said conductive material comprises metal or metal silicide.
- 7. The interconnect structure of claim 1, wherein said first dielectric comprises an oxide formed in a chemical vapor deposition chamber with a silane or TEOS source.
- 8. A local interconnect, comprising:
- a first layer of dielectric formed upon a first level of interconnect;
- a second level of interconnect arranged upon the first layer of dielectric, wherein said second level of interconnect is configured partially with a dense layout area where spacings of said second level of interconnect are a minimum distance apart, and wherein said dense layout area includes first and second conductors; and
- a local conductor arranged within said first dielectric such that an upper surface of said local conductor is vertically displaced from a lower surface of said first and second conductors by a vertical distance, said local conductor arranged laterally between and equidistant from said first and second conductors, said local conductor connected to a third conductor of said second level of interconnect through contacts located exterior to said dense area.
- 9. The local interconnect of claim 8, wherein said first and second levels of interconnect comprise aluminum.
- 10. The local interconnect of claim 8, wherein said local conductor comprises tungsten.
- 11. The local interconnect of claim 8, further comprising a second dielectric layer formed on said local conductor.
- 12. The local interconnect of claim 11, wherein said first and second dielectric layers comprise oxide formed in a chemical vapor deposition chamber using a silane or TEOS source.
Parent Case Info
This Application is a Divisional of Ser. No. 08/660,674 filed Jun. 5, 1996, now U.S. Pat. No. 5,767,012.
US Referenced Citations (9)
Foreign Referenced Citations (1)
Number |
Date |
Country |
5-198691 |
Aug 1993 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Wolf, S., "Silicon Processing for the VLSI Era," 1990, Lattice Press, vol. 2, pp. 189-206, 279-285. |
IBM Technical Disclosure Bulletin entitled, "Sub-Surface Local Interconnects," vol. 34, No. 12, May 1, 1992, pp. 283-285. |
Divisions (1)
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Number |
Date |
Country |
Parent |
660674 |
Jun 1996 |
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