Claims
- 1. An integrated device comprising:
- a transistor comprising:
- a substrate;
- a buffer layer over said substrate; and
- a channel layer over said buffer layer;
- a resonant tunneling diode (RTD) comprising:
- a first contact layer abutting a sidewall of said transistor;
- a first tunnel barrier layer over said first contact layer;
- a quantum well layer over said first tunnel barrier layer;
- a second tunnel barrier layer over said quantum well layer; and
- a second contact layer over said second tunnel barrier layer;
- wherein said transistor and said RTD are integrated.
- 2. The device of claim 1, wherein said transistor is a Field Effect Transistor.
- 3. The device of claim 1, wherein said transistor is a mesa defined structure.
- 4. The device of claim 1, further comprising an insulating layer over said channel layer.
- 5. The device of claim 1, wherein said device is of III-V materials.
- 6. The device of claim 1, wherein said device comprises multiple RTDs.
- 7. The device of claim 6, wherein said RTDs are on multiple sidewalls of said transistor.
- 8. The device of claim 6, wherein said RTDs are stacked.
Parent Case Info
This is a division of application Ser. No. 08/153,116, filed Nov. 15, 1993, now U.S. Pat. No. 5,416,040.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4814836 |
Thompson |
Mar 1989 |
|
5428224 |
Hayashi et al. |
Jun 1995 |
|
Divisions (1)
|
Number |
Date |
Country |
Parent |
153116 |
Nov 1993 |
|