Source or drain regions of field-effect devices

Industry

CPC
H01L29/0843

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0843Source or drain regions of field-effect devices

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based multi-channel switching semiconductor device and meth...
- Patent number 12,159,871
- Issue date Dec 3, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hui Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all-around semiconductor device
- Patent number 12,142,635
- Issue date Nov 12, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing Fung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 12,113,104
- Issue date Oct 8, 2024
- Sumitomo Electric Industries, Ltd.
- Koshi Hamano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with epitaxy regions having mixed wavy and non-wavy portions
- Patent number 12,094,779
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active region, active region array and formation method thereof
- Patent number 12,087,581
- Issue date Sep 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- ChihCheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an integrated circuit having transistor gates ov...
- Patent number 12,062,658
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,051,741
- Issue date Jul 30, 2024
- Sumitomo Electric Industries, Ltd.
- Kenya Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective liner on backside via and method thereof
- Patent number 12,021,119
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,002,853
- Issue date Jun 4, 2024
- Toyoda Gosei Co., Ltd.
- Toru Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral fin static induction transistor
- Patent number 11,978,789
- Issue date May 7, 2024
- HRL Laboratories, LLC
- Biqin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,461
- Issue date Mar 5, 2024
- Denso Corporation
- Kenji Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,916,078
- Issue date Feb 27, 2024
- Samsung Electronics Co., Ltd.
- Sohyeon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,908,893
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,901,409
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture
- Patent number 11,901,410
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split source drain transistor
- Patent number 11,876,057
- Issue date Jan 16, 2024
- Honeywell Federal Manufacturing & Technologies, LLC
- Joshua Joseph Trujillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,862,733
- Issue date Jan 2, 2024
- Samsung Electronics Co., Ltd.
- Sunguk Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having 2D channel layer
- Patent number 11,855,150
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yun-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supportive layer in source/drains of FinFET devices
- Patent number 11,855,142
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT)
- Patent number 11,843,046
- Issue date Dec 12, 2023
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 11,837,633
- Issue date Dec 5, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- King Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with epitaxy regions having mixed wavy and non-wavy portions
- Patent number 11,830,772
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor source/drain contacts and methods of forming the same
- Patent number 11,798,943
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yang-Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor devices using sacrificial capping...
- Patent number 11,784,236
- Issue date Oct 10, 2023
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 11,784,221
- Issue date Oct 10, 2023
- INNOSCIENC (ZHUHAI) TECHNOLOGY CO., LTD.
- King Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,784,248
- Issue date Oct 10, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 11,769,824
- Issue date Sep 26, 2023
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 11,764,267
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective liner on backside via and method thereof
- Patent number 11,742,385
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395864
- Publication date Nov 28, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing FUNG
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Memory Structures And Method Of Forming The Same
- Publication number 20240381651
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETS WITH EPITAXY REGIONS HAVING MIXED WAVY AND NON-WAVY PORTIONS
- Publication number 20240363420
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240355820
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240355887
- Publication date Oct 24, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE LINER ON BACKSIDE VIA AND METHOD THEREOF
- Publication number 20240347598
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lin-Yu HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMPLIFIER CIRCUIT
- Publication number 20240339535
- Publication date Oct 10, 2024
- Sumitomo Electric Industries, Ltd.
- Ken KIKUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL FIN STATIC INDUCTION TRANSISTOR
- Publication number 20240250160
- Publication date Jul 25, 2024
- HRL LABORATORIES, LLC
- Biqin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240234585
- Publication date Jul 11, 2024
- DB HITEK CO., LTD.
- Hong Sik SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT SOURCE DRAIN TRANSISTOR
- Publication number 20240234344
- Publication date Jul 11, 2024
- HONEYWELL FEDERAL MANUFACTURING & TECHNOLOGIES, LLC
- Joshua Joseph Trujillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF
- Publication number 20240213319
- Publication date Jun 27, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Yun-Hung SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT
- Publication number 20240204048
- Publication date Jun 20, 2024
- Intel Corporation
- Hwichan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL MECHANICAL POLISHING OF CARBON HARD MASK
- Publication number 20240194732
- Publication date Jun 13, 2024
- Intel Corporation
- Matthew J. Prince
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240153993
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240145543
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240145535
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- PEI-YU CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
- Publication number 20240120374
- Publication date Apr 11, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICES WITH A CONDUCTIVE COMPONENT TO CONTR...
- Publication number 20240097016
- Publication date Mar 21, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
- Publication number 20240096958
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER
- Publication number 20240088228
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yun-Yuan WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...
- Publication number 20240072159
- Publication date Feb 29, 2024
- Manoj Chandrika Reghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047527
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240030333
- Publication date Jan 25, 2024
- ROHM CO., LTD.
- Kazuya NAGASE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs With Epitaxy Regions Having Mixed Wavy and Non-Wavy Portions
- Publication number 20230386924
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
- Publication date Nov 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME
- Publication number 20230369325
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yang-Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE LINER ON BACKSIDE VIA AND METHOD THEREOF
- Publication number 20230369401
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lin-Yu HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS
- Publication number 20230243068
- Publication date Aug 3, 2023
- Applied Materials, Inc.
- Errol Antonio C Sanchez
- C30 - CRYSTAL GROWTH
Information Patent Application
LATERAL POWER SEMICONDUCTOR DEVICE
- Publication number 20230178592
- Publication date Jun 8, 2023
- NEXPERIA B.V.
- Stefano Dalcanale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230144657
- Publication date May 11, 2023
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS

Source or drain regions of field-effect devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gallium nitride transistor with a doped region

Nitride-based multi-channel switching semiconductor device and meth...

Gate all-around semiconductor device

Semiconductor device

FinFETs with epitaxy regions having mixed wavy and non-wavy portions

Active region, active region array and formation method thereof

Method for forming an integrated circuit having transistor gates ov...

Semiconductor device

Selective liner on backside via and method thereof

Semiconductor device

Lateral fin static induction transistor

Semiconductor device

Semiconductor devices

Semiconductor device and method of forming the same

Semiconductor device and method of manufacturing the same

Semiconductor devices and methods of manufacture

Split source drain transistor

Semiconductor devices

Semiconductor device having 2D channel layer

Supportive layer in source/drains of FinFET devices

High electron mobility transistor (HEMT)

Semiconductor device and manufacturing method therefor

FinFETs with epitaxy regions having mixed wavy and non-wavy portions

Transistor source/drain contacts and methods of forming the same

Methods for forming semiconductor devices using sacrificial capping...

Semiconductor device and manufacturing method therefor

Group III-V semiconductor structures having crystalline regrowth la...

Gallium nitride transistor with a doped region

Semiconductor device and fabricating method thereof

Selective liner on backside via and method thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Semiconductor Memory Structures And Method Of Forming The Same

FINFETS WITH EPITAXY REGIONS HAVING MIXED WAVY AND NON-WAVY PORTIONS

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SELECTIVE LINER ON BACKSIDE VIA AND METHOD THEREOF

AMPLIFIER CIRCUIT

LATERAL FIN STATIC INDUCTION TRANSISTOR

SEMICONDUCTOR DEVICE

SPLIT SOURCE DRAIN TRANSISTOR

SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT

CHEMICAL MECHANICAL POLISHING OF CARBON HARD MASK

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF

COMPOUND SEMICONDUCTOR DEVICES WITH A CONDUCTIVE COMPONENT TO CONTR...

SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES

SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER

SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

FinFETs With Epitaxy Regions Having Mixed Wavy and Non-Wavy Portions

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME

SELECTIVE LINER ON BACKSIDE VIA AND METHOD THEREOF

METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS

LATERAL POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF