Integrated OTP memory for providing MTP memory

Abstract

An integrated One-Time Programmable (OTP) memory to emulate an Multiple-Time Programmable (MTP) memory with a built-in program count tracking and block address mapping is disclosed. The integrated OTP memory has at least one non-volatile block register and count register to respectively store block sizes and program counts for different block/count configurations. The count register can be programmed before each round of programming occurs to indicate a new block for access. The integrated OTP memory also can generate a block address based on values from the count and block registers. By combining the block address with the lower bits of an input address, a final address can be generated and used to access different blocks (associated with different program counts) in the OTP memory to mimic an MTP memory.

Description

BACKGROUND OF THE INVENTION

OTP, One-Time Programmable, memory is a device that can be programmed once and only once. The OTP can be a fuse that has low resistance state initially to be programmed into a high resistance state. The OTP can be an anti-fuse that has high resistance state initially to be programmed into a lower resistance state. The OTP can also be a charge-trapping device. By determining certain parameters about whether there is sufficient charge stored in a floating gate or oxide/nitride spacer, a proper initial and programmed state can be determined. The fuse can be an interconnect fuse, such as silicided polysilicon, metal, or metal-gate fuse, or a contact/via fuse. The anti-fuse can be a gate-oxide breakdown fuse in a MOS or dielectric breakdown fuse between two conductors.

There are many applications that require a memory can be programmed a few times, from two times to several hundred times, called MTP, Multiple-Time Programmable memory. This kind of device typically falls between one-time OTP and 10K times programmable memory, such as a flash memory. The process requirements for MTP are also different from OTP and flash memory. Normally, in fabrication, MTP can allow adding one or two more masks, while OTP requires zero add-on mask and flash memory can allow adding at least 7-8 masks over the standard logic processes.

An OTP memory can be used to implement an MTP memory. Such as a memory can be referred to as a pseudo-MTP. By using N OTP cells as one pseudo-MTP cell, each pseudo-MTP cell can be programmed N times by programming into the different OTP cells each time in the pseudo-MTP cell. Alternatively, N OTP memories can be used as one N-time programmable MTP by programming into different OTP memory each time.

FIG. 1 shows a block diagram of a portion of a conventional pseudo-MTP system 10 as one exemplary embodiment. The pseudo-MTP system 10 includes a pseudo-MTP memory 18 built into an OTP memory array 15 having 4 blocks of 256 B (Bytes) each block denoted 15-0 through 15-3, respectively. The first time to program an OTP is to program into the block 0, 15-0. The second time is to program into the block 1, 15-1, and so on. A control system 12 is responsible to keep track of program counts by software or hardware and to generate proper addresses to select the suitable blocks in the OTP memory array 15 for access.

The conventional approach to providing a control system to keep track of the number of times programmed and to generate proper addresses is too complicated and thus undesirable for use with a pseudo-MTP. The overhead for the control system is too high to use pseudo-MTP effectively. Thus, there is a need for improved methods and circuits to keep track of program counts and to generate proper addresses to access an OTP memory to emulate an MTP memory. As a result, a pseudo-MTP memory can be rendered very easy to use and its cost can be relatively low.

SUMMARY

Embodiments disclosed herein use various schemes to emulate an MTP memory by using an integrated OTP memory, i.e., a so-called pseudo-MTP memory, with minimum system overhead. The integrated pseudo-MTP memory can have at least one non-volatile register to store program count and block size for different count and block configurations. The integrated pseudo-MTP can use a built-in address mapping scheme to generate proper addresses based on the number of program counts. Thus, the system overhead to access a pseudo-MTP memory can be minimized.

According to one embodiment, a pseudo-memory device can have at least one non-volatile register to store block size and program count information so that a fixed OTP memory can be configured into different tradeoffs between block sizes and program counts. The smaller the block size, the larger the program counts and vice versa. Every time a new round of programming is started, the count register will update at least once so that the follow-on programming will be mapped into a new OTP block associated with the latest program count. Any subsequent read operation will find the latest program count from the program count register and to generate a proper address to access the latest OTP block associated with the latest program count.

The invention can be implemented in numerous ways, including as a method, system, device, or apparatus (including computer readable medium). Several embodiments of the invention are discussed below.

As an OTP-for-MTP memory, one embodiment can, for example, include at least an OTP memory that has a plurality of OTP blocks and at least one non-volatile register to store block size and program count information so that a fixed OTP memory can be configured into different tradeoffs between blocks sizes and program counts. The smaller the block size, the larger the program counts and vice versa. Every time a new round of programming is started the count register can be updated at least once so that follow-on programming can be mapped into a new OTP block associated with the latest program count. Any subsequent read operation will acquire the latest (current) program count from the program count register and generate a proper address to access the latest OTP block associated with the latest program count.

As an electronic system, one embodiment can, for example, include at least: a processor; and an OTP-for-MTP memory operatively connected to the processor. The OTP-for-MTP memory can include at least an OTP memory that has a plurality of OTP blocks and at least one non-volatile register to store block size and program count information so that a fixed OTP memory can be configured into different tradeoffs between blocks sizes and program counts. The smaller the block size, the larger the program counts and vice versa. Every time a new round of programming is started the count register can be updated at least once so that follow-on programming can be mapped into a new OTP block associated with the latest program count. Any subsequent read operation will acquire the latest (current) program count from the program count register and generate a proper address to access the latest OTP block associated with the latest program count.

As a method for building an OTP for MTP memory, one embodiment can, for example, include at least: providing an OTP memory that has a plurality of OTP blocks and at least one non-volatile register to store block size and program count information so that a fixed OTP memory can be configured into various blocks sizes versus different program counts tradeoff. The smaller the block size, the larger the program count can become and vice versa. Every time starting a new round of programming, the count register can be updated at least once so that follow-on programming can be mapped into a new OTP block associated with the updated program count. Any subsequent read will find the latest program count from the program count register and to generate a proper address to access the latest OTP block associated with the latest program count.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the following detailed descriptions in conjunction with the accompanying drawings, wherein like reference numerals designate like structural elements, and in which:

FIG. 1 shows a conventional block diagram of building a pseudo-MTP using a system to keep track of program counts and address mapping.

FIG. 2(a) shows a block diagram of logic and physical memory map in a pseudo-MTP memory, according to one embodiment.

FIG. 2(b) shows a block diagram of logic and physical memory map in a pseudo-MTP memory, according to another embodiment.

FIG. 2(c) shows a block diagram of logic and physical memory map in a pseudo-MTP memory, according to yet another embodiment.

FIG. 3(a) shows a block diagram of a memory map with 1 KB configured as 4 blocks of 256 B 4-time programmable memory, according to one embodiment.

FIG. 3(b) shows a block diagram of a memory map with 1 KB configured as 8 blocks of 128 B 8-time programmable memory, according to another embodiment.

FIG. 4(a) shows a block register and count register associated with 256 B block of 4-time programmable as shown in FIG. 3(a), according to one embodiment.

FIG. 4(b) shows a block register and count register associated with 128 B block of 8-time programmable as shown in FIG. 3(b), according to one embodiment.

FIG. 5 shows a block diagram of finding the block address from the count register, according to one embodiment.

FIG. 6 shows a portion of block diagram of a pseudo-MTP with an OTP memory array, registers and control logic, according to one embodiment.

FIG. 7 shows a numeric example of generating a final address to access an OTP memory in a pseudo-MTP memory, according to one embodiment.

FIG. 8 depicts a method in a flow chart to start a new count of programming in a pseudo-MTP memory, according to one embodiment.

FIG. 9 depicts a method in a flow chart to read pseudo-MTP memory, according to one embodiment.

FIG. 10 shows a block diagram of a portion of an electronics system using a pseudo-MTP memory, according to one embodiment.

DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

Embodiments disclosed herein use various schemes to use a portion of OTP memory with different blocks for different program counts to operate like, i.e., mimic, an MTP memory. Embodiments can also use an automatic address generation to access different blocks in the OTP memory. A portion of OTP memory can be divided into many blocks associated with different program counts. The block sizes can be made smaller to accommodate more program counts, or can be made larger to accommodate fewer program counts. There can be at least one non-volatile register to store block sizes and program counts. There can also be circuitry to generate a block address based on program counts. The block address together with the lower bits in an input address can be used to generate a final address to access the OTP memory accordingly as the latest data that has been programmed. The embodiment can implement in a pseudo-MTP memory.

Several embodiments of the invention are discussed below with reference to FIGS. 2(a)-10. However, those skilled in the art will readily appreciate that the detailed description given herein with respect to these figures is for explanatory purposes as the invention extends beyond these limited embodiments.

FIG. 2(a) shows a block diagram 20 to illustrate the concept of address mapping in an integrated pseudo-MPT macro, i.e., a functional block in an integrated circuit, according to one embodiment. Block diagram 20 has a logic memory map that has a portion of memory 21 having 4 blocks of 256 B memories 22-0 through 22-3. There is also a physical memory map that has an OTP memory 26 having 4 blocks of 256 B OTP memories 27-0 through 27-3 as a pseudo-MTP 28. In the logic memory map, only the block 22-0 is visible when the pseudo-MTP has been used. In other words, any address accesses from 22-0 through 22-3 will be mapped into 22-0 by ignoring the two upper address bits when the pseudo-MTP has been used. On the other hand in the physical memory map, accessing any address in 22-0 in the logic memory map can be mapped into 27-0 through 27-3 automatically, with each macro corresponding to each program count. For example, 22-0 can be mapped into 27-0 for the first program count, 22-0 can be mapped into 27-1 for the second program count, and so on. In another embodiment, only the logic address for block 22-0 can be mapped into the pseudo-MPT memory and the logic addresses for 22-1 through 22-3 can be mapped into other memory locations.

FIG. 2(b) shows a block diagram 20′ to illustrate the concept of address mapping in an integrated pseudo-MPT macro, according to another embodiment. Block diagram 20′ has a logic memory map that has a portion of memory 21′ having 4 blocks of 256 B memory 22′-0 through 22′-3. There is also a physical memory map that has an OTP memory 26′ having 4 blocks of 256 B OTP memories 27′-0 through 27′-3 as a pseudo-MTP 28′. In the logic memory map, only the block 22′-0 is visible when the pseudo-MTP has been used. In other words, any address accesses from 22′-0 through 22′-3 will be mapped into 22′-0 by ignoring the two upper address bits when the pseudo-MTP has been used. On the other hand in the physical memory map, accessing any address in 22′-0 in the logic memory map can be mapped into 27′-0 through 27′-3 automatically, with each macro corresponding to each program count. For example, 22′-0 will be mapped into 27′-0 for the first program count. 22′-0 will be mapped into 27′-1 for the second program count and so on. The physical address for block 27′-0 through 27′-3 can be mapped with an offset from the logic address in another embodiment. This can be embodied with a non-volatile register, called MTP base register, to relocate the logic address in the physical memory map. There can be a multiple set of MTP base registers to relocate any or all OTP blocks in the physical memory map. In another embodiment, only the logic address for block 22′-0 can be mapped into the pseudo-MPT memory and the logic addresses for 22′-1 through 22′-3 will be mapped into other memory locations.

FIG. 2(c) shows a block diagram 20″ to illustrate the concept of address mapping in an integrated pseudo-MPT macro, according to another embodiment. Block diagram 20″ has a logic memory map that has a portion of memory 21″ having one 256 B block of MTP memory 22″-0. There is also a physical memory map that has an OTP memory 26″ having 4 blocks of 256 B OTP memories 27″-0 through 27″-3 as a pseudo-MTP memory 28″. In the logic memory map, any address accesses in block 22″-0 can be mapped into 27″-0 through 27″-3 automatically, with each macro corresponding to each program count. For example, 22″-0 will be mapped into 27″-0 for the first program count. 22″-0 will be mapped into 27″-1 for the second program count and so on. The physical address for block 27″-1 through 27″-3 can be relocated in the physical memory to make memory management easier. For example, the blocks for program count larger than one, such as block 27″-1 through 27″-3, can be mapped into any physical memory that is reserved, unused, unlikely to be otherwise used, or that is beyond the logic address. This can be embodied using a non-volatile register, called count base register, to relocate the address in the physical memory map for blocks 27″-1 through 27″-3 when the program count is larger than one. There can be multiple sets of count base registers to relocate some or all of OTP blocks associated with different program counts in the physical memory map.

FIGS. 3(a) and 3(b) illustrates physical memories 30 and 30′ of different block size and program count configuration, respectively. In FIG. 3(a), a portion of an OTP memory 35 has a 1 KB pseudo-MTP memory 38 that can be configured as 4 blocks of 256 B OTP memory 35-0 through 35-3. Each count of programming will start from blocks 35-0 through 35-3 for up to 4 times. Alternatively, in FIG. 3(b) the same OTP memory 35′ that has a 1 KB pseudo-MTP memory 38′ can be configured as 8 blocks of 128 B OTP memory 35′-0 through 35′-7. Each count of programming will start from 35′-0 through 35′-7 for up to 8 times. There are various schemes that can be used to keep track of different block size and program count configurations in a fixed OTP memory compartment.

FIGS. 4(a) and 4(b) shows a block diagram 40 and 40′, respectively, having at least one block register and one count register in an integrated pseudo-MTP memory according to one embodiment of the present invention. The block registers 41 in FIG. 4(a) can have the 8^th bit 45-8 programmed to indicate a 2^8 or 256 B block size, corresponding to the configuration in FIG. 3(a). Similarly the block register 41′ can have the 7^th bit 45′-7 programmed to indicate a 2^7 or 128 B block size, corresponding to the configuration in FIG. 3(b). The count registers 42 and 42′ in FIGS. 4(a) and 4(b), store the program counts, i.e. count=3 and count=2, corresponding to the latest block addresses 2 and 1 as shown in FIGS. 3(a) and 3(b), respectively. The block register and count register are non-volatile registers that can be stand-alone OTP registers or OTP cells integrated into an OTP array. The block register should be programmed to set the proper block size before any pseudo-MTP can be used. The entire pseudo-MTP should be read to check if there are any defects before being used. Then when a new program count starts, at least one bit in the count register can be programmed, from the lowest to highest bits, before any actual programming can happen, in one embodiment.

The MTP base register in FIG. 2(b), count base register in FIG. 2(c), block register and count register in FIGS. 4(a) and 4(b) can be non-volatile registers so that the configuration can be programmed only once before the pseudo-MTP can be used or each new count of programming. However, there can be some volatile registers to be read as the counterpart of the non-volatile registers upon powering up, chip selected, or triggered by a signal. The volatile registers can be set to any value so that each block in the pseudo-MTP memory can be read arbitrarily. This feature allows checking if all blocks are all 0s before any programming and reading past programmed data for testability considerations.

FIG. 5 shows a block diagram of block address generator 50 based on the count register 51. The count register 51 can be programmed into the 0^th bit 55-0 before or after the first round of programming and the 1^st bit 55-1 before or after the second round of programming and so on. The program count can be generated by adding all bits in the count register 51 together (assuming the programmed bits are 1s and un-programmed bits are 0s), or by finding the first 0 in the bit location in the count register 51, starting from the lowest bit. For example, there are three programmed bits so that the total number of 1s is 3 in FIG. 5. Another way to generate program count is to find the first 0 in the bit location starting from the bit position 0, or bit location 3 in FIG. 5. Since the block address starts from 0, the program count 3 corresponds to the block address 3−1=2. If the initial OTP data are 1s and programmed OTP data are 0s, the block address can be generated by adding the complement of all bits in the count register 51 together, or by finding the first 1 in the bit location in the count register in another embodiment. The block address can be used as upper bits in a final address to generate a physical memory address accordingly.

FIG. 6 shows a portion of a pseudo-MTP macro 60 with an OTP memory array 65, a block register 61, count register 62, count detector 63, block address generator 64, lower bits in the input address 66, and MTP/count base register 67, according to one embodiment of the present invention. Every time accessing the pseudo-MTP memory 68 in the OTP memory 65, an address range will be checked first. If the address range is beyond 0 and 1023, accessing the other memory as usual. However, if the input address is between 0 and 1023, an automatic logic to physical memory translation occurs. Firstly, the block register 61 and count register 62 will be checked. Block register 61 should be programmed to indicate a proper block size before use. If the count register 62 is all 0s, this indicates a blank pseudo-MTP 68 before any use. Reading the pseudo-MTP 68 will proceed without any address translation, which means the physical address is identical to the logic address to read blank data (i.e. all 0s) in the 1 KB OTP memory. Before the first count of programming starts, bit location 0 in the count register 62 will be programmed. The count register 62 will be read accordingly. The new count register 62 has only one 1 to indicate the block address is 0 so that all programming will occur in the block 65-0 together with the lower bits in the input address 66 to access any bits in the block 65-0. When reading the pseudo-MTP 68 after the first count of programming finished, the count register 62 will be read as 1 to indicate a block address 0 so that reading bits will be within the block 65-0 and using the lower bits in the input address 66 to read any bits within the block 65-0. In the second count of programming, the bit location 1 in the count register will be programmed and the subsequent programs or read will use the block 65-1 for access. An MTP base register or count base register 67 can be used to relocate some or all of the OTP blocks associated with different program counts in the physical memory.

FIG. 7 further illustrates the address generation using actual numbers as an example. In FIGS. 3(a) and 4(a), the count register is 0000,0111 to indicate the third count of programming and the block register is 1,0000,0000 to indicate a 256 B block size. The block address is 2 in decimal or 10 in binary, since the count register has three (3) 1s. The address for the block will start at 10,0000,0000, since the block size is 256 B. With the lowest 8-bit address 1001,1101 from the input address, the final address to access the pseudo-MTP memory is 10,1001,1101. In this example, the MTP based register or count based register is not used for simplicity.

FIGS. 3(a) through FIG. 7 are for illustrative purposes as to exemplify the key conceptions of this invention. There are various and equivalent embodiments for this invention and they all fall within the scope of this invention for those skilled in the art. For example, the pseudo-MTP memory can have any memory capacity or block size, though 1 KB and 256 B are used in the above description. The OTP memory can have one portion that is dedicated to OTP and can have a plurality of pseudo-MTP memories with different block/count tradeoffs. The block size can be a byte, two-byte, 256-byte, or any binary numbers, depending on the applications. Similarly, the lowest bit (bit 0) in the block register can indicate a byte, two-byte, 256-byte, or any binary numbers, depending on the application. Programming the count register can be a decoded binary number, such as 001, 010, 011, . . . for the first, second, and third programming counts, respectively, instead of programming a bit in the count register each time starting a new count of programming. Converting the count register into a block address can be achieved by adding all bits or complement of all bits together or by finding the first 0 or 1 in the location of bit stream, and subtracting some offsets if needed. The block register, count register, MTP base register, or count base register can be any stand-alone non-volatile register or can be built into the OTP memory array upon downloaded into volatile registers during powering up, chip selected, or triggered by a signal. The volatile registers can be set to arbitrary values to access any OTP blocks for testability purposes.

FIG. 8 shows a flow chart 700 depicting a method for programming data in an integrated pseudo-MTP, according to one embodiment. The procedure starts at 705 when an user is ready to write data into a memory when the OTP memory is checked for all blanks and the program supply voltages are properly setup. In step 710, check an input address to determine if the address is within the pseudo-MTP address range. If not, access the other portion of memory in step 715 and go to step 775 to check if more data to be programmed. If yes, check if the program count exceeds a limit in step 718. If yes, the program stops at 799 with an error. If not, program the count register at least once in step 720. Then, read the update count register in step 730 and find the count number in step 740 by adding all bits in the count register. Generate the block address in step 750 by multiplying the block size with the count number and subtracting 1 if needed. Generate a final address for OTP in step 760 by combining the block address with the lower bits in the input address. Adding the final address with an MTP base register or count base register, if needed. Then program the data into the final address generated in step 770. Check if all data have been programmed in the next step 775. If not, ready to program the next address in step 785 and go to step 710, otherwise the programming stops at 799.

FIG. 9 shows a flow chart 800 depicting a method for reading data in an integrated pseudo-MTP, according to one embodiment. The procedure starts at 805 when an user is ready to read data from a memory. In step 810, check if an input address is within the pseudo-MTP address range. If not, access the other portion of memory in step 815 and go to step 875 to check if more data to be read. If yes, read the count register in step 820. Then, check if all bits in the count register are all zero in step 830. If yes, read the OTP memory with the input address in step 835 and go to step 875 to check if more data to be read. If not, find the latest count number in the count register in step 840. Then, use the count number to generate the block address in step 850. Generate the final address in step 860 by combining the block address with the lower bits in the input address. Adding the final address with an MTP base register or count base register, if needed. Then, read the pseudo-MTP with the final address generated in step 870 accordingly. Check if all data have been read in step 875. If not, ready to read the next input address in step 885 and go to step 810, otherwise stop reading data in step 899.

FIGS. 8 and 9 illustrate flow charts depicting embodiments of a programming method 700 and a read method 800, respectively, in accordance with certain embodiments. The methods 700 and 800 are described in the context of a memory, such as the memory 60 in FIG. 6. In addition, although described as a flow of steps, one of ordinary skilled in the art will recognize that at least some of the steps may be performed in a different order, including simultaneously, or skipped.

FIG. 10 shows an electronic system 900 according to one embodiment. The electronic system 900 can include a pseudo-MTP memory 940, such as a plurality of OTP memory cell 944 in at least one OTP memory array 942, according to one embodiment. The electronic system 900 can, for example, pertain to a computer system. The electronic system can include a Central Process Unit (CPU) 910, which communicate through a common bus 915 to various memory and peripheral devices such as I/O 920, hard disk drive 930, CDROM 950, and other memory 960. Other memory 960 is a conventional memory such as DRAM, SRAM, ROM, or flash that can interface to CPU 910 through a memory controller. CPU 910 generally is a microprocessor, a digital signal processor, or other programmable digital logic devices. Memory 940 can be constructed as an integrated circuit, which includes the at least memory array 942 and at least one OTP memory 944 for building a pseudo-MTP memory 940. The pseudo-MTP memory 940 can interface to CPU 910 through a memory controller. If desired, the memory 940 may be combined with the processor, for example CPU 910, in a single integrated circuit.

The embodiments of invention can be implemented in a part or all of an OTP, One-Time-Programmable memory, to emulate functionality of an MTP memory. The OTP can be an electrical fuse, anti-fuse, or charge-trapping device, depending on different embodiments. The electrical fuse can be an interconnect fuse, such as silicided polysilicon, metal, or metal-gate fuse, or can be a contact/via fuse. The anti-fuse can be a MOS gate oxide breakdown anti-fuse or can be a dielectric breakdown anti-fuse built between two conductors. The charge-trapping OTP can be based on charge-trapping mechanism in the floating gate or oxide/nitride spacer. There are many variations and equivalent embodiments of building OTPs for MTP and they all fall within the scope of this invention for those skilled in the art.

Additional details on OTP devices, including designing, using and programming thereof, can be found in: (i) U.S. patent application Ser. No. 13/471,704, filed on May 15, 2012 and entitled “Circuit and System of Using Junction Diode as Program Selector for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (ii) U.S. patent application Ser. No. 13/026,752, filed on Feb. 14, 2011 and entitled “Circuit and System of Using Junction Diode as Program Selector for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (iii) U.S. patent application Ser. No. 13/026,656, filed on Feb. 14, 2011 and entitled “Circuit and System of Using Polysilicon Diode As Program Selector for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (iv) U.S. patent application Ser. No. 13/026,752, filed on Feb. 14, 2011 and entitled “Circuit and System of Using a Junction Diode as Program Selector for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (v) U.S. patent application Ser. No. 13/954,831, filed on Jul. 30, 2013 and entitled “Circuit and System of Using Junction Diode as Program Selector for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (vi) U.S. patent application Ser. No. 13/471,704, filed on May 15, 2012 and entitled “Circuit and System of Using a Junction Diode as Program Selector for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (vii) U.S. patent application Ser. No. 13/835,308, filed on Mar. 5, 2013 and entitled “Circuit and System of Using a Junction Diode as Program Selector for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (viii) U.S. patent application Ser. No. 13/840,965, filed on Mar. 15, 2013 and entitled “Circuit and System of Using Junction Diode as Program Selector and Mos as Read Selector for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (ix) U.S. patent application Ser. No. 13/970,562, filed on Aug. 19, 2013 and entitled “Circuit and System of Using Junction Diode as Program Selector for Metal Fuses for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (x) U.S. patent application Ser. No. 13/842,824, filed on Mar. 15, 2013 and entitled “Circuit and System of Using a Junction Diode as Program Selector for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (xi) U.S. patent application Ser. No. 14/749,392, filed on Jun. 24, 2015 and entitled “Circuit and System of Using a Junction Diode as Program Selector for One-Time Programmable Devices,” which is hereby incorporated herein by reference; (xii) U.S. patent application Ser. No. 14/485,698, filed on Sep. 13, 2014 and entitled “One-Time Programmable Devices Using Junction Diode as Program Selector for Electrical Fuses with Extended Area,” which is hereby incorporated herein by reference; (xiii) U.S. patent application Ser. No. No. 14/485,696, filed on Sep. 13, 2014 and entitled “Method and Structure for Reliable Electrical Fuse Programming,” which is hereby incorporated herein by reference; (xiv) U.S. patent application Ser. No. 14/644,020, filed on Mar. 10, 2015 and entitled “Method and Structure for Reliable Electrical Fuse Programming,” which is hereby incorporated herein by reference; (xv) U.S. patent application Ser. No. 13/590,044, filed on Aug. 20, 2012 and entitled “Multiple-Bit Programmable Resistive Memory Using Diode as Program Selector,” which is hereby incorporated herein by reference; (xvi) U.S. patent application Ser. No. 13/288,843, filed on Nov. 3, 2011 and entitled “Low-In-Count Non-Volatile Memory Interface,” which is hereby incorporated herein by reference; (xvii) U.S. patent application Ser. No. 14/553,874, filed on Nov. 25, 2014 and entitled “Low-In-Count Non-Volatile Memory Interface,” which is hereby incorporated herein by reference; (xviii) U.S. patent application Ser. No. 14/231,404, filed on Mar. 31, 2014 and entitled “Low-Pin-Count Non-Volatile Memory Interface with Soft Programming Capability,” which is hereby incorporated herein by reference; (xix) U.S. patent application Ser. No. 14/792,479, filed on Jul. 6, 2015 and entitled “Low-Pin-Count Non-Volatile Memory Interface with Soft Programming Capability,” which is hereby incorporated herein by reference; (xx) U.S. patent application Ser. No. 14/231,413, filed on Mar. 31, 2014 and entitled “Low-In-Count Non-Volatile Memory Embedded in a Integrated Circuit without any Additional Pins for Access,” which is hereby incorporated herein by reference; (xxi) U.S. patent application Ser. No. 14/493,069, filed on Sep. 22, 2014 and entitled “Low-In-Count Non-Volatile Memory Interface for 3D IC,” which is hereby incorporated herein by reference; (xxii) U.S. patent application Ser. No. 14/636,155, filed on Mar. 2, 2015 and entitled “Low-In-Count Non-Volatile Memory Interface for 3D IC,” which is hereby incorporated herein by reference; (xxiii) U.S. patent application Ser. No. 13/761,057, filed on Feb. 6, 2013 and entitled “Circuit and System for Testing a One-Time Programmable (OTP) Memory,” which is hereby incorporated herein by reference; and (xxiv) U.S. patent application Ser. No. 14/500,743, filed on Sep. 29, 2014 and entitled “Circuit and System of Using Finfet for Building Programmable Resistive Devices,” which is hereby incorporated herein by reference.

The above description and drawings are only to be considered illustrative of exemplary embodiments, which achieve the features and advantages of certain embodiments of the present invention. Modifications and substitutions of specific process conditions and structures can be made without departing from the spirit and scope of the present invention.

The many features and advantages of the present invention are apparent from the written description and, thus, it is intended by the appended claims to cover all such features and advantages of the invention. Further, since numerous modifications and changes will readily occur to those skilled in the art, it is not desired to limit the invention to the exact construction and operation as illustrated and described. Hence, all suitable modifications and equivalents may be resorted to as falling within the scope of the invention.

Claims

1. A pseudo-MTP memory that uses at least a portion of One-Time Programmable (OTP) memory to function as a Multiple-Time Programmable (MTP) memory, comprising: at least one OTP memory array having a plurality of OTP blocks;at least one block register configured to provide non-volatile storage for a block size; andat least one count register configured to store a program count;wherein the count register is programmed at least once each time starting a new programming a different one the of the OTP blocks in the OTP memory array, andwherein a final address to access the different blocks of the OTP memory array is generated based on the at least one count register, the at least one block register, and an input address.

2. A pseudo-MTP memory as recited in claim 1, wherein the block register is programmed to configure the block size before at least one block of the OTP memory array is programmed.

3. A pseudo-MTP memory as recited in claim 1, wherein the final address to access the OTP memory array is generated by using the at least one count register to determine a block address and by using the lower bits in the input address to determine a memory location within one of the blocks.

4. A pseudo-MTP memory as recited in claim 1, wherein the final address to access the OTP blocks is relocated in a memory map by adding an offset set from at least one register.

5. A pseudo-MTP memory as recited in claim 1, wherein the final address to access the OTP blocks associated with the program count higher than one is relocated in a memory map by adding an offset from at least one register.

6. A pseudo-MTP memory as recited in claim 1, wherein at least one bit in the at least one count register is programmed consecutively starting from the lowest or the highest bit location, when starting a new count of programming each time.

7. A pseudo-MTP memory as recited in claim 1, wherein a block address is generated from the at least one count register by adding all bits or complement of all bits in the at least one count register with an offset subtracted, if needed.

8. A pseudo-MTP memory as recited in claim 1, wherein a block address is generated from the at least one count register by finding the first 1 or 0 bit location, starting from the lowest or highest bit location with an offset subtracted, if needed.

9. A pseudo-MTP memory as recited in claim 1, wherein the at least one block register and/or the at least one count register is in the OTP memory array and is read into one or more volatile registers upon powering up, chip selected, or triggered by a signal.

10. A pseudo-MTP memory as recited in claim 1, wherein the at least one block register or the at least one count register has at least one counterpart of volatile register that can be set to any arbitrary values to access any of the OTP blocks associated with different program counts.

11. A pseudo-MTP memory as recited in claim 1, wherein at least one OTP cell in the OTP memory array includes at least one of electrical fuse, anti-fuse, charge-trapping device, or combination thereof.

12. An electronic system, comprising: a processor; anda pseudo-MTP memory operatively connected to the processor, the pseudo-MTP memory comprising: at least one OTP array having a plurality of OTP blocks; andat least one non-volatile register to store a block size and a program count,wherein the register is programmed at least once to store the program count each time when starting a new count of programming the OTP array; andwherein a final address will be generated based on the count stored in the register, the block size stored in the register, and an input address to access the different blocks of the OTP memory.

13. An electronic system as recited in claim 12, wherein the register in the pseudo-MTP memory is programmed to configure the block size before the pseudo-MTP is used.

14. An electronic system as recited in claim 12, wherein the final address used by the pseudo-MTP memory to access the OTP memory is generated by using the program count to determine a block address and by using with the lower bits in the input address to determine a memory location within a block.

15. An electronic system as recited in claim 12, wherein at least one bit in the register in the pseudo-MTP memory is programmed consecutively starting from the lowest or the highest bit location, each time a new count of programming is started.

16. A method for providing an integrated One-Time Programmable (OTP) memory to function as a Multiple-Time Programmable (MTP) memory, the method comprising: providing at least one OTP memory array having a plurality of OTP memory blocks;providing at least one non-volatile block register and at least one non-volatile count register, the at least one non-volatile block register storing a block size and the at least one non-volatile count register storing a program count;programming at least one non-volatile count register at least once before starting a new count of programming of the OTP memory;reading the program content and the block size respectively from the at least one non-volatile count register and the at least one non-volatile block register before any subsequent programming or reading the pseudo-MTP memory;wherein a final address for use in accessing the OTP memory is generated based on the program count, the block size, and an input address to access the blocks in the OTP memory.

17. A method as recited in claim 16, wherein the block register is programmed to configure the block size before the pseudo-MTP is placed in use.

18. A method as recited in claim 16, wherein the final address to access the OTP memory is generated by using the program count stored in the at least one non-volatile count register to determine a block address and using the lower bits in the input address to determine a memory location within a block.

19. A method as recited in claim 16, wherein the final address to access at least one of the OTP memory blocks associated with one program count is relocated in the memory map by adding an offset from the at least one non-volatile block register.

20. A method as recited in claim 16, wherein at least one bit in the at least one non-volatile count register is programmed consecutively starting from the lowest or the highest bit location each time a new count of programming is performed.

21. A method as recited in claim 16, wherein a block address is generated from the at least one non-volatile count register by adding all bits or the complement of all bits in the at least one non-volatile count register with an offset subtracted.

22. A method as recited in claim 16, wherein a block address is generated from the at least one non-volatile count register by finding the first 1 or 0 bit location, starting from the lowest or highest bit location with an offset subtracted.

23. A method as recited in claim 16, wherein the at least one non-volatile block register and/or the at least one non-volatile count register is provided in the OTP memory array and is read into one or more volatile registers upon powering up or chip selected.