Claims
- 1. An interconnection structure for a semiconductor device, comprising:
- a first aluminum interconnection layer including a layer containing aluminum and a layer containing refractory metal formed on the layer containing aluminum;
- an insulating layer on said first aluminum interconnection layer;
- a through-hole extending completely through said insulating layer and into but not through said underlying said layer containing refractory metal; and
- a second aluminum interconnection layer formed on said insulating layer and extending through said through-hole so as to be in contact with said layer containing refractory metal.
- 2. The interconnection structure for a semiconductor device according to claim 1, wherein said layer containing refractory metal has a thickness of at least 500 .ANG. and said through-hole extends into said layer containing refractory metal to a depth of less than 500 .ANG..
- 3. The interconnection structure for a semiconductor device according to claim 2, wherein said layer containing refractory metal is formed of a titanium nitride layer that has a thickness of at least 1000 .ANG..
- 4. The interconnection structure for a semiconductor device according to claim 2, wherein said layer containing refractory metal is formed of a layer containing tungsten that has a thickness of at least 500 .ANG..
- 5. The interconnection structure for a semiconductor device according to claim 4, wherein said layer containing refractory metal is formed of a tungsten layer.
- 6. An interconnection structure for a semiconductor device, comprising:
- a first interconnection layer comprising upper and lower conductive layers, one on top of the other;
- an insulating layer on said first interconnection layer;
- a through-hole extending completely through said insulating layer and into but not through said underlying upper conductive layer; and
- a second interconnection layer formed on said insulating layer and extending through said through-hole so as to be electrically connected to said first interconnection layer by contact with the upper conductive layer through said through-hole.
- 7. The interconnection structure for a semiconductor device according to claim 6, wherein the upper conductive layer has a resistance higher than that of the lower conductive layer.
- 8. The interconnection structure for a semiconductor device according to claim 6, wherein the lower conductive layer contains aluminum.
- 9. The interconnection structure for a semiconductor device according to claim 6, wherein the upper conductive layer comprises a material which prevents hillock formation on top of the lower conductive layer.
- 10. The interconnection structure for a semiconductor device according to claim 6, wherein the upper conductive layer contains a refractory metal.
- 11. The interconnection structure for a semiconductor device according to claim 6, wherein the upper conductive layer has a reflectivity lower than that of the lower conductive layer.
- 12. The interconnection structure for a semiconductor device according to claim 6, wherein said upper conductive layer has a resistance to stress migration and electromigration higher than that of said lower conductive layer.
- 13. The interconnection structure for a semiconductor device according to claim 6, wherein said upper conductive layer includes material serving as an etching-stopper in forming said through-hole.
- 14. The interconnection structure for a semiconductor device according to claim 6, wherein said first interconnection layer further comprises a barrier metal layer formed under said lower conductive layer.
- 15. An interconnection structure for a semiconductor device, comprising:
- a semiconductor substrate having a main surface;
- a semiconductor element formed on said main surface of the semiconductor substrate;
- a first interconnection layer connected to said semiconductor element comprising upper and lower conductive layers, one on top of the other;
- an insulating layer on said first interconnection layer having a through-hole extending completely through said insulating layer and into but not through said upper conductive layer; and
- a second interconnection layer formed on said insulating layer and extending through said through-hole so as to be electrically connected to said first interconnection layer by contact with the upper conductive layer through said through-hole.
- 16. An interconnection structure for a semiconductor device, comprising:
- a first aluminum interconnection layer including a layer containing aluminum and a layer containing refractory metal formed on the layer containing aluminum;
- an insulating layer formed on said first aluminum interconnection layer and having a through-hole extending completely through said insulating layer and into but not through said layer containing refractory metal; and
- a second aluminum interconnection layer formed on said insulating layer and extending through said through-hole so as to be in contact with said layer containing refractory metal,
- wherein said layer containing refractory metal is formed of a titanium nitride layer that has a thickness of at least 1000 .ANG. and said through-hole extends into said layer containing refractory metal to a depth of less than 500 .ANG..
- 17. An interconnection structure for a semiconductor device, comprising:
- a first aluminum interconnection layer including a layer containing aluminum and a layer containing refractory metal formed on the layer containing aluminum;
- an insulating layer formed on said first aluminum interconnection layer and having a through-hole extending completely through said insulating layer and into but not through said layer containing refractory metal; and
- a second aluminum interconnection layer formed on said insulating layer and extending through said through-hole so as to be in contact with said layer containing refractory metal,
- wherein said layer containing refractory metal is formed of a tungsten layer that has a thickness of at least 500 .ANG. and said through-hole extends into said layer containing refractory metal to a depth of less than 500 .ANG..
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-073206 |
Apr 1991 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 07/858,997 filed Mar. 30, 1992, now abandoned.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
3562604 |
Van Laer et al. |
Feb 1971 |
|
4556897 |
Yorikane et al. |
Dec 1985 |
|
4900695 |
Takahashi et al. |
Feb 1990 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
64-80065 |
Mar 1989 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
858997 |
Mar 1992 |
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