Patent Application
20180108642
The present disclosure relates to semiconductor fabrication. In particular, the present disclosure relates to an interposer heater integrated into applications that include high bandwidth memory (HBM) modules with logic chips in the 14 nanometer technology node and beyond.
Prior semiconductor packaging devices have integrated heaters and interposers. However, existing heaters are only used for general heating. For example, a silicon carrier employed in wafer probe and electrical test application die rework includes a heater to facilitate with the removal, attachment and testing of electronic components.
Currently, there are no devices with controlled heating based on ambient environmental and component temperatures. Next generation networking and radio based systems require tremendous bandwidth (e.g., several terabytes per second) between the processor and memory. HBM is an up-front solution in the industry today which addresses this bandwidth performance requirement.
Although ASIC technology can operate over a temperature range of −40° C. to 125° C., HBM only functions properly between 0° C. and 95° C. This is an insufficient range for certain environmental conditions, such as outside operation in cell phone towers located in colder climates. At the lower temperature limit (e.g., 0° C.), the environmental conditions may be such that the HBM 107 is much colder during off and dormant conditions. Further, at upper temperature limits of HBM 107 (e.g., 95° C.) it is very difficult to cool the HBM since it is in close proximity to a very hot, high powered IC 105.
A need therefore exists for methodology enabling heater integration that provides targeted heating at specific locations to ensure functionality in adverse environmental climates and the resulting devices.
An aspect of the present disclosure is an integrated heater for HBM applications that provides controlled heating based on ambient environmental and component temperatures at a very specific location to ensure functionality. The present disclosure provides a pre-heat function in the interposer to enable the HBM to operate properly at start-up. The present disclosure further provides a pre-heat function for the HBM through dynamic power with targeted activation.
Additional aspects and other features of the present disclosure will be set forth in the description which follows and in part will be apparent to those having ordinary skill in the art upon examination of the following or may be learned from the practice of the present disclosure. The advantages of the present disclosure may be realized and obtained as particularly pointed out in the appended claims.
According to the present disclosure, some technical effects may be achieved in part by a method including forming a Si interposer over a substrate; forming HBM and an integrated circuit (IC) over the Si interposer; forming a heater on the Si interposer in a space between the HBM and Si interposer; and utilizing temperature sensors in the HBM to monitor a temperature of the HBM.
Aspects of the present disclosure include forming the heater by forming resistance lines on the Si interposer in the space between the HBM and Si interposer. Other aspects include an output of the one or more temperature sensors in the HBM causing activation of the heater directly. Further aspects include forming a user operated register in the HBM for setting and adjusting a temperature of the HBM. Additional aspects include forming one or more temperature sensors in the IC. Yet further aspects include an output of the one or more temperature sensors in the IC that causes activation of the heater directly. Other aspects include forming wiring between the HBM and IC. Still further aspects include connecting the heater to power and ground connections.
Another aspect of the present disclosure is a method forming a Si interposer over a substrate; forming HBM and an IC over the Si interposer; utilizing one or more temperature sensors in the HBM to monitor a temperature of the HBM; and generating dummy reads to idle areas of the HBM or non-utilized bandwidth areas of the HBM to generate heat in the idle areas or non-utilized bandwidth areas to a pre-determined temperature.
Aspects include providing up to date temperature readings by the one or more temperature sensors to permit intelligent heating of the idle areas or non-utilized bandwidth areas.
Another aspect of the present disclosure is a Si interposer formed over a substrate; HBM and an IC formed over the Si interposer; one or more temperature sensors disposed in the HBM to monitor a temperature of the HBM, wherein the interface of the HBM is configured to generate dummy reads to idle areas of the HBM or non-utilized bandwidth areas of the HBM to generate heat in the idle areas or non-utilized bandwidth areas to a pre-determined temperature.
Yet another aspect of the present disclosure includes a device including a Si interposer formed over a substrate; HBM and an IC formed over the Si interposer; a heater formed on the Si interposer in a space between the HBM and Si interposer; and one or more temperature sensors in the HBM to monitor a temperature of the HBM.
Aspects include the heater having resistance lines formed on the Si interposer in the space between the HBM and Si interposer. Other aspects include an output of the one or more temperature sensors in the HBM causing activation of the heater directly. Additional aspects include a user operated register formed in the HBM for setting and adjusting a temperature of the HBM. Further aspects include one or more temperature sensors formed in the IC. Yet other aspects include an output of the one or more temperature sensors in the IC causing activation of the heater directly. Still further aspects include wiring formed between the HBM and IC. Other aspects include power and ground connections connected to heater. Additional aspects include the IC including an application specific integrated circuit (ASIC).
Additional aspects and technical effects of the present disclosure will become readily apparent to those skilled in the art from the following detailed description wherein embodiments of the present disclosure are described simply by way of illustration of the best mode contemplated to carry out the present disclosure. As will be realized, the present disclosure is capable of other and different embodiments, and its several details are capable of modifications in various obvious respects, all without departing from the present disclosure. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawing and in which like reference numerals refer to similar elements and in which:
In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of exemplary embodiments. It should be apparent, however, that exemplary embodiments may be practiced without these specific details or with an equivalent arrangement. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring exemplary embodiments. In addition, unless otherwise indicated, all numbers expressing quantities, ratios, and numerical properties of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term “about.”
The present disclosure addresses and solves the current problem of HBM functionality failure in colder environmental conditions. In accordance with embodiments of the present disclosure, controlled heating is provided at specific device locations to ensure proper functionality during colder environmental conditions.
Methodology in accordance with embodiments of the present disclosure includes forming a Si interposer over a substrate; forming HBM and an IC over the Si interposer; forming a heater on the Si interposer in a space between the HBM and Si interposer; and utilizing one or more temperature sensors in the HBM to monitor a temperature of the HBM.
Still other aspects, features, and technical effects will be readily apparent to those skilled in this art from the following detailed description, wherein preferred embodiments are shown and described, simply by way of illustration of the best mode contemplated. The disclosure is capable of other and different embodiments, and its several details are capable of modifications in various obvious respects. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
Adverting to
The embodiments of the present disclosure can achieve several technical effects, including interposer heater integration to provide controlled and targeted heating. The present disclosure enjoys industrial applicability in any of various industrial applications, e.g., microprocessors, smart phones, mobile phones, cellular towers, cellular handsets, set-top boxes, DVD recorders and players, automotive navigation, printers and peripherals, networking and telecom equipment, gaming systems, and digital cameras. The present disclosure therefore enjoys industrial applicability in any of various types of semiconductor devices using HBM in the advanced technology nodes.
In the preceding description, the present disclosure is described with reference to specifically exemplary embodiments thereof. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit and scope of the present disclosure, as set forth in the claims. The specification and drawings are, accordingly, to be regarded as illustrative and not as restrictive. It is understood that the present disclosure is capable of using various other combinations and embodiments and is capable of any changes or modifications within the scope of the inventive concept as expressed herein.
