Claims
- 1. A diamond member, comprising:
- a diamond film wafer having a first and a second face;
- a coating on the second face, the coating being thick enough to at least fill any valleys of the second face and having an exposed coating surface which is sufficiently parallel to the first face to readily permit photolithographic processing.
- 2. The diamond member according to claim 1, wherein the coating is at least as thick as the difference between the smallest and the largest thickness dimensions of the wafer.
- 3. The diamond member according to claim 2, wherein said coating comprises a loading of particles in a binder.
- 4. The diamond member according to claim 3, wherein the particles are diamond.
- 5. The member according to claim 1, wherein the surface of the coating is finished to be smooth relative to the second face.
- 6. The member according to claim 5, wherein the coating is at least as thick as the difference between the smallest and largest thickness dimensions of the wafer.
- 7. The member according to claim 6, wherein the coating includes a loading of particles.
- 8. The member according to claim 7, wherein the particles are diamond.
Parent Case Info
This is a divisional of application Ser. No. 07/642,244 filed on Jan. 15, 1991, now U.S. Pat. No. 5,244,712.
Foreign Referenced Citations (1)
Number |
Date |
Country |
379773 |
Jan 1990 |
EPX |
Non-Patent Literature Citations (1)
Entry |
Ravi et al "Silicon on Insulator Technology Using CVD Diamond Films" Electrochemical Soc, LA, Calif. May, 1989. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
642244 |
Jan 1991 |
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