Number | Date | Country | Kind |
---|---|---|---|
8-217424 | Aug 1996 | JP |
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4514895 | Nishimura | May 1985 | |
4655850 | Kakimoto et al. | Apr 1987 | |
5365875 | Asai et al. | Nov 1994 | |
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5454347 | Shibata et al. | Oct 1995 | |
5496768 | Kudo | Mar 1996 | |
5529951 | Noguchi et al. | Jun 1996 | |
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5591668 | Maegawa et al. | Jan 1997 | |
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Entry |
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M. Kamiya et al., “Eximer Laser Annealing SLA3600,” pp. 24-25 with its English translations and Document 1 (Electronic Display Forum '96 program cover sheet, Apr. 17-19, 1996) and Document 2 (List of Presentations at Forum '96, including Eximer Laser Annealing System SLA 3600, Apr. 19, No. 18) showing the laid open of Apr.17-Apr. 19, 1996. |
Mamoru Furuta et al., “Bottom-Gate Poly-Si Thin Film Transistors Using XeCI Excimer Laser Annealing and Ion Doping Techniques,” IEEE Transactions on Electron Devices, vol. 40, No. 11, Nov., 1993. |