1. Field of the Invention
The present invention relates generally to semiconductor fabrication processes, and more particularly to an apparatus and method for removing particles from a surface.
2. Description of Related Art
Removal of sub-100 nanometer (nm) particles from a surface can be a challenging subject for semiconductor fabrication processes. These particles may include contaminants on the surface including materials such as organic material, dust, residue, and metal impurities. Generally, the particles accumulate when the substrate is being stored or is in a stand-by state between successive processes and may cause defects, particularly for integrated circuits on a substrate.
The surface-particle interactions depend on the material and the surface structure. As such, the energy transfer efficiency needed to remove a particle from a surface strongly depends on the size of the particle on the surface. Generally, adhesive forces between the particle and the surface need to be broken and the particle needs to be transported far enough away from the surface such that the particle will not be redeposited on the surface.
Current methods for removing particles include wet cleaning techniques that involve immersing a substrate in a series of chemical solutions or spraying a series of chemical solutions onto a substrate, including for example, hydrofluoric acid, hydrogen peroxide solution, sulfuric acid, etc. In some techniques, a spin brush and/or a megasonic cleaner may be included. However, these processes are both expensive and produce waste that is environmentally harmful. Additionally, the use of a spin brush or an megasonic cleaner can be effective in removing large particles, but are hardly effective in removing particles on the order of submicrons or smaller.
Additionally, Next Generation Lithography (NGL) used in semiconductor technology includes reflective optics on glass substrates which have a surface roughness of approximately 1.5 Angstrom RMS or less to prevent scattering of the light, which may degrade the lithography process performance. Generally, all particles larger than about 27 nanometers need to be removed from the surface of a mask substrate that is used for NGL. The conventional wet cleaning techniques that use under etching of particles to remove particles from the surface are no longer applicable as they increase the surface roughness beyond the required value. In addition, most of the current advanced cleaning tools do not have the ability to remove the total particles with size of 27 nm and larger from the surface of the plates. This is due lack of a mechanism that be able to convey relatively high energy or momentum in distances of few nanometers from the surface. Additionally, current tools lack a mechanism to increase the population of reactive species in the vicinity of interface. Most of the chemical reactions are driven by diffusion process of the reactive species toward the surface.
Laser shock wave cleaning is another application using laser for surface cleaning. Particle removal efficiency depends on the momentum transferred to the particle on the surface, which in turn depends on the shock velocity parallel to the surface. The shock velocity depends on different parameters including the gas temperature and pressure. During the shock creation, plasma will form around the focus point of the laser light. However, when the focal point of the laser comes close to the surface, the plasma created can touch the surface and can cause damage to the surface.
The referenced shortcomings are not intended to be exhaustive, but rather are among many that tend to impair the effectiveness of previously known techniques concerning particle removal; however, those mentioned here are sufficient to demonstrate that the methodologies appearing in the art have not been satisfactory and that a significant need exists for the techniques described and claimed in this disclosure.
For sub 100 nm particles, physical techniques in addition to chemical techniques may be used to separate particles from a surface. Different laser cleaning techniques, such as using a laser interaction with the particle or a liquid-assisted laser cleaning technique may use sudden evaporation of a liquid (e.g., water) on the surface by laser pulses to remove particles from the surface. Further, the present disclosure provides parameters to control the energy transfer to the particle. For example, for the shock wave generation parameters, the droplets size and concentration (e.g., pressure), substrate surface temperature, chemical composition of the droplets may be controlled.
The term “coupled” is defined as connected, although not necessarily directly, and not necessarily mechanically.
The terms “a” and “an” are defined as one or more unless this disclosure explicitly requires otherwise.
The term “substantially,” “about,” and its variations are defined as being largely but not necessarily wholly what is specified as understood by one of ordinary skill in the art, and in one-non and in one non-limiting embodiment the substantially refers to ranges within 10%, preferably within 5%, more preferably within 1%, and most preferably within 0.5% of what is specified.
The terms “comprise” (and any form of comprise, such as “comprises” and “comprising”), “have” (and any form of have, such as “has” and “having”), “include” (and any form of include, such as “includes” and “including”) and “contain” (and any form of contain, such as “contains” and “containing”) are open-ended linking verbs. As a result, a method or device that “comprises,” “has,” “includes” or “contains” one or more steps or elements possesses those one or more steps or elements, but is not limited to possessing only those one or more elements. Likewise, a step of a method or an element of a device that “comprises,” “has,” “includes” or “contains” one or more features possesses those one or more features, but is not limited to possessing only those one or more features. Furthermore, a device or structure that is configured in a certain way is configured in at least that way, but may also be configured in ways that are not listed.
Other features and associated advantages will become apparent with reference to the following detailed description of specific embodiments in connection with the accompanying drawings.
The following drawings form part of the present specification and are included to further demonstrate certain aspects of the present invention. The invention may be better understood by reference to one or more of these drawings in combination with the detailed description of specific embodiments presented herein.
The invention and the various features and advantageous details are explained more fully with reference to the nonlimiting embodiments that are illustrated in the accompanying drawings and detailed in the following description. Descriptions of well known starting materials, processing techniques, components and equipment are omitted so as not to unnecessarily obscure the invention in detail. It should be understood, however, that the detailed description and the specific examples, while indicating embodiments of the invention, are given by way of illustration only and not by way of limitation. Various substitutions, modifications, additions, and/or rearrangements within the spirit and/or scope of the underlying inventive concept will become apparent to those skilled in the art from this disclosure.
The present disclosure provides integrating different laser-based cleaning methods with a wet bench approach to control and/or substantially eliminate damage to a surface during a particle removal process. In one embodiment, shockwaves may be created in the vapor/air environment, which is more effective than the conventional techniques where shockwaves are created in a liquid medium. In the latter case, most of the shock wave energy is absorbed in the liquid environment and therefore, very little energy will be exerted to the contaminant particle. The cleaning tool and methods for creating shockwaves of the present disclosure allow energy loss in vapor to be minimized.
Referring to
In some embodiments, nozzle 104 may move on a radial axis and may allow for full scanning of the surface of the substrate, using for example, nozzle motor 114. Alternatively or in addition, nozzle 104 may be coupled to nozzle arm 116 that may move nozzle 104 in, for example, a vertical and/or horizontal manner parallel to the surface. In addition to a scanning operation, nozzle arm 116 may be used for localized or targeted cleaning by moving the rotating the stage to an angle (θ) of and nozzle to location (r). Hence, if the defect location is known, the nozzle may be moved to the specific location and cleaning process applied to that point, and thus, limits and/or substantial eliminates damage to the surface.
In one embodiment, cleaning tool 100 may be used integrated in a dry cleaning tool for dry cleaning of a substrate. The application of a light source, such as, but not limited to a UV light source, may change the condition of most surfaces of interest to hydrophilic that leads to a lower number of particles both in spin drying and surface-tension-gradient based drying processes in cleaning tools. Alternatively, cleaning tool 100 may be integrated into a wet cleaning tool (e.g., stripping tools, etching tools, etc.) and may be used for cleaning of a substrate in combination with a wet cleaning process.
Referring to
Cleaning tool 100 may be covered by a housing (e.g., polyvinylidene fluoride, PVDF) that may include a gap. A gas, such as, but not limited to, highly purified nitrogen may flow through this gap through gas feed 217 into a front portion of a lens to protect lens 218 from chemicals during the cleaning operation. In one embodiment, the gas may prevent condensation on lens element 218. Alternatively, the flow of substantially pure nitrogen may also protect lens element 218 during the laser operation.
Nozzle 104 may provide a light source operating in different modes. In one embodiment, the light source may include a laser which may operate in a direct laser cleaner mode in which the laser light may be focused on the defect on the surface and the defect may be removed by expansion. This may be done by rotating nozzle 104 over about the area of the defect and allows a focused light spot onto a portion of the surface, such that the defects in the expose area may be removed. If the laser is focused on a few microns spot and if a particle is small (e.g., a few hundred nanometers), the damage area may be limited and/or substantially minute compared to conventional techniques. In another embodiment, if direct laser cleaning is used in combination with substrate scanning, the average energy applied to the surface may be lower and some degree of damage control is possible.
In another embodiment, nozzle 104 may allow the laser to remove particles in combination with a layer of liquid (e.g., water) provided onto surface 101. The focused laser at the surface may evaporate the liquid and cause fast movement of liquid parallel to the surface. This parallel flow may remove the particles from the surface.
Alternatively, if the wavelength of the laser is in the ultraviolet region, the photons may have enough energy to break the chemical bonds of the organic particles on the surface and may allow the particles to be easier to remove. In one embodiment, if oxygen is present in the environment, UV light can produce ozone, as described in U.S. Ser. No. ______, entitled “A Method and Apparatus for an In-Situ Ultraviolet Cleaning Tool,” filed on Dec. 13, 2005 and incorporated herein in its entirety. In turn, the produced ozone may react with the particles on the surface and subsequently remove them from the surface. Note that in this operation of the laser, the high intensity of the laser for ablation may not be used, but the high-energy photons may accelerate the desired chemical reactions by breaking unwanted chemical bonds.
If the wavelength of the laser is in the infrared or near-infrared region and the laser works in continuous operation mode or pulse operation mode with high pulse repetition rate, then the average energy transferred to the surface may be high enough to raise the temperature of the surface in the focal point of the laser light. The surface temperature may increase the chemical reactions that dissolve the particles. In another embodiment, if chemicals, such as dilute hydrofluoric acid are used, the surface may be etched. In some embodiments, the etching may be have an etch rate that depends on the temperature, which may rise at about or around the location of focused laser beam. It is noted that different chemicals and different particles may be used, as most chemical reactions are temperature dependent.
In other embodiments, a laser beam may be focused on a location above the surface such that if the laser intensity is above the breakdown field of the environment, plasma and a shock wave may be created. Referring to
The plasma created in chamber 322 by a laser may disappear shortly after the laser intensity is reduced. As such, in one embodiment, the plasma may be contained by using a magnetic field 430 applied to the plasma in the direction shown in
In one embodiment, a torrid for creating an azimuth magnetic field may be used to confine the plasma. In
In other embodiments, plasma 640 may be confined by repelling the plasma within the two ring electrode configuration 642 when an electric field from electric power source 644 is applied, as shown in
In some embodiments, plasma confinement may be done in the horizontal configuration with the methods described above but changing the electrode configuration. For example in the case that shown in
The creation of the shock wave may depend on the environment properties. For example, in a gas environment, the shock wave properties may depend, among other things, to gas pressure, temperature and composition. This shock wave may propagate through the media at a high velocity (approximately a few hundred meters per second or more) where the laser strikes the surface and may transfer high momentum to the particles on the surface to separate the particles from the surface. The surface damage may be controlled by limiting the intensity of the laser light and based on the distance between laser light and the surface. In addition to dry cleaning by shock wave, liquid-assisted shock cleaning may be used. The application of the shock to the surface with a thin liquid film may evaporate the liquid film and cause fast movement of liquid parallel to the surface. This parallel flow may remove the particles from the surface.
In one embodiment, a low-pressure vapor/fume may be created on the top of the surface, as shown in
In other embodiments, the temperature at surface 701 may be at a range of about 30 to 90° C. such that substantially little or no condensation occurs at the surface. As such, droplets 750 may decrease in volume as they approach surface 701 and subsequently be evaporated.
As noted above, optical fibers (e.g., 110, 210, and 310 of
In some embodiments, collimator 816 may be coupled to nozzle arm 810 for moving the nozzle to a location on a surface that requires cleaning. As such, nozzle arm 810 may be coupled to the nozzle motor 114 as is shown in
In a vertical configuration for the shock creation, if there is no plasma formation, the laser can directly hit the surface and may cause damage. Therefore, surface damage is one important issue in vertical configuration in which laser incidents normal to the plate surface. In order to avoid surface damage due to the direct exposure to surface from the laser beam, the laser light may be placed inside a cleaning tool substantially parallel to the surface of the plate. Incoming light 962 from light source 99 may be directed to surface 901 via nozzle arm 910 and a set of mirrors 960 spaced apart from each other. Nozzle 904 may remain fixed with respect to surface 104 to bowl wall 960 of a cleaning tool and the focal point (F1 and F2) may be shifted by using a motorized zoom from lens 918, as shown in
Alternatively, the focal point may be scanned by moving a lens out of the process chamber into the optical setup as shown in
The present disclosure provides targeted cleaning of a surface (e.g., mask and/or wafer) where the surface may first by inspected by a defect inspection tool. Next, the hard or soft defects are determined and the cleaning techniques mentioned above are used to locally remove the particles by targeting specific location of the defect on the surface. In this approach hard defects are removed locally.
The techniques that described above may be used for defect removal of both mask and wafers and other surfaces of interests. Further the techniques may be integrated to cleaning tools. Further, the present disclosure offers designs and concepts that can lead to a standalone laser based cleaning tool or as an added module to an existing cleaning tool.
All of the apparatuses disclosed and claimed herein can be made and executed without undue experimentation in light of the present disclosure. While the apparatus and methods of this invention have been described in terms of preferred embodiments, it will be apparent to those of skill in the art that variations may be applied to the methods and in the steps or in the sequence of steps of the method described herein without departing from the concept, spirit and scope of the invention. In addition, modifications may be made to the disclosed apparatus and components may be eliminated or substituted for the components described herein where the same or similar results would be achieved. All such similar substitutes and modifications apparent to those skilled in the art are deemed to be within the spirit, scope, and concept of the invention as defined by the appended claims.
This application claims priority to, and incorporates by reference, U.S. Provisional Patent Application Ser. Nos. 60/636,829 and 60/636,827, which were filed on Dec. 16, 2004.
Number | Date | Country | |
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60636829 | Dec 2004 | US | |
60636827 | Dec 2004 | US |