Patent Application
20110100966
1. Field of the Invention
The present invention relates to a laser processing method for emitting a laser beam and processing workpieces.
2. Description of the Background Art
Various techniques that emit pulse laser beams and process workpieces (hereinafter, simply laser processing or laser processing techniques) have been already publicly known (for example, see Japanese Patent Application Laid-Open No. 2004-9139, International Publication No. 2006/062017, Japanese Patent Application Laid-Open Nos. 2007-83309 and 2008-98465).
Japanese Patent Application Laid-Open No. 2004-9139 discloses a method for dividing a die as a workpiece by forming a groove (break groove) having a V-shaped cross section along a division planned line by means of a laser ablation and dividing the die with the groove being used as a starting point. On the other hand, International Publication No. 2006/062017 discloses a method of emitting a laser beam in a defocused state along a division planned line of a workpiece (an object to be divided) to generate a melting alteration region (an affected region) having an approximately V-shaped cross section whose crystalline state is inferior to its surrounding on an irradiated area and dividing a workpiece with a lowermost point of the melting alteration region being used as a starting point.
In both the cases where the division starting point is formed by using the techniques disclosed in Japanese Patent Application Laid-Open No. 2004-9139 and International Publication No. 2006/062017, it is important to form a V-shaped cross section having uniform shape (a groove cross section or an affected region cross section) along a direction of the division planned line as a scanning direction of a laser beam in order to satisfactorily carry out division thereafter. In cope with this situation, for example, the emission of a laser beam is controlled so that areas to be irradiated with a laser beam for each pulse (beam spots) are overlapped with each other forward and backward.
For example, when a repetition frequency (unit: kHz) is determined as R and a scanning speed (unit: mm/sec) is determined as V, which are a most basic parameter of the laser processing, their ratio V/R equates an interval of beam spot centers. In the techniques disclosed in Japanese Patent Application Laid-Open No. 2004-9139 and International Publication No. 2006/062017, the laser beam is emitted and scanning is performed under a condition that V/R is 1 μm or less so that the beam spots are overlapped with each other.
Japanese Patent Application Laid-Open No. 2007-83309 discloses an aspect in which a laser beam is emitted with a focal point matching with an inside of a substrate having a laminator on its surface to form an affected region in the substrate, and the affected region is used as a starting point of cut.
Japanese Patent Application Laid-Open No. 2008-98465 discloses an aspect in which scanning by means of a laser beam is repeated along one separating line at a plurality of times, and a groove section and a alterated section that are continuous in a direction of the separating line, and an internal alterated section that is not continuous in the direction of the separating line are formed up and down in a depth-wise direction.
The method for forming a division starting point by means of a laser beam and dividing by means of a breaker is advantageous in view of automatism, high-speed performance, stability and high accuracy performance in comparison with diamond scribing that is a conventional mechanical cutting method.
However, when a workpiece formed with a light-emitting element structure such as an LED structure on a substrate made of a hard, brittle, and optically transparent material such as sapphire is divided into a unit of a chip (divided piece), light generated inside the light-emitting element is absorbed in a processing trail resulted from the laser processing, and thus an efficiency of extracting the light from the element is deteriorated. Particularly a problem is noticeable for the light-emitting element structure using the sapphire substrate having high refractive index.
After a great deal of consideration, the inventors of the present invention have learned that it is effective for solving the above problem to form fine uneven portions having about a few μm pitch on a laser beam irradiated position of a workpiece (a position to be processed) and thereby to reduce total reflectivity on the position.
As for Japanese Patent Application Laid-Open No. 2004-9139, International Publication No. 2006/062017 and Japanese Patent Application Laid-Open No. 2007-83309, awareness of the above problem is not recognized therein. So naturally, they do not include nor suggest means for solving the problem.
For example, Japanese Patent Application Laid-Open No. 2004-9139 and International Publication No. 2006/062017 disclose the technique that forms a V-shaped cross section having a uniform shape along the direction of the division planned line, and this technique is opposite to the aspect in which the above uneven portion is formed.
On the other hand, Japanese Patent Application Laid-Open No. 2008-98465 describes that when a separating surface is completely melted down by a laser beam, the light extracting efficiency is deteriorated, and further, it discloses the aspect in which one division planned line is processed up and down at a plurality of times. However, the steps in the aspect are complicated and require takt time.
It is an object of the present invention to provide a laser processing method for irradiating a laser beam and processing a workpiece, and a laser processing apparatus that realizes the processing, and particularly the processing forming a division starting point at the time of dividing a workpiece.
According to the present invention, a laser processing method for forming a processed region on a workpiece includes: a) a step of emitting a pulse laser beam from a predetermined light source; and b) a step of irradiating the pulse laser beam emitted at the step a) to the workpiece while scanning and forming the processed region on the workpiece, wherein an irradiated range on a surface of the workpiece is modulated by modulating an irradiating state of the pulse laser beam from the predetermined light source, the processed region has a continuous portion in a first direction, whereas a state of a cross section vertical to the first direction changes in the first direction.
A laser processing apparatus of the present invention includes a light source for emitting a pulse laser beam, a stage that is provided to be movable relatively with respect to the light source and on which a workpiece is placed, and a control element for controlling emission of the pulse laser beam from the light source and a movement of the stage. The laser processing apparatus emits the pulse laser from the light source while moving the stage on which the workpiece is placed relatively with respect to the light source, and forms a processed region on the workpiece while scanning by means of the pulse laser beam. The control element controls the light source and an operation of the stage so that an irradiating state of the pulse laser beam from the light source is modulated at the time of scanning by means of the pulse laser beam, and the laser processing apparatus forms the processed region that has a portion continuous in a first direction and in which a state of a cross section vertical to the first direction changes in the first direction.
According to the present invention, the processed region as a division starting point at the time of dividing the workpiece can be formed into a shape whose surface side is continuous but whose bottom portion is discontinuous. As a result, when the light emitting structure is divided, a divided piece in which a light absorption performance on a processing trail is repressed can be obtained.
It is, therefore, an object of the present invention to provide the laser processing method for performing the laser processing with which light absorption on the processing trail is reduced, and the laser processing apparatus for realizing the method.
These and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
The stage 7 can be moved in a horizontal direction between the laser beam irradiating part 50A and the observing part 50B by a moving mechanism 7m. The moving mechanism 7m moves the stage 7 to predetermined XY biaxial directions in a horizontal plane by means of a function of a driver, not shown. This realizes a movement of a laser beam irradiated position in the laser beam irradiating part 50A, a movement of an observing position in the observing part 50B, and a movement of the stage 7 between the laser beam irradiating part 50A and the observing part 50B. The moving mechanism 7m can perform a rotating operation (0 rotation) in the horizontal plane about a predetermined rotating axis, independently from the horizontal drive.
The laser processing apparatus 50 can suitably switch between the front-surface observation and the rear-surface observation. As a result, suitable observation according to a material and a state of the workpiece 10 can be performed flexibly and quickly.
The stage 7 is formed by the transparent material such as quartz, and a suction piping, not shown, to be an air inlet passage for absorbing and fixing the workpiece 10 is provided inside the stage 7. The suction piping is provided by, for example, drilling a hole on a predetermined position of the stage 7 by means of machining process.
With the workpiece 10 being placed on the stage 7, a sucking unit 11 such as a suction pump performs suction on the suction piping so as to apply a negative pressure to a suction hole provided to a front end of the suction piping located on the put-on side of the stage 7. Because of the suction, the workpiece 10 (and a transparent sheet 4) is fixed to the stage 7.
The laser beam irradiating part 50A is constituted so as to be capable of processing the workpiece 10 by irradiating a laser beam to the workpiece 10 placed on the stage 7.
More specifically, in the laser beam irradiating part 50A, a laser beam LB is emitted from a laser beam source SL and is reflected by a dichroic mirror 51 provided into a lens barrel, not shown. Thereafter, the laser beam LB is condensed by a condensing lens 52 so as to be focused on a portion to be processed of the workpiece 10 placed on the stage 7, with the stage 7 being located on the laser beam irradiating part 50A, and is irradiated to the workpiece 10. Combining the irradiation of the laser beam LB and the movement of the stage 7 makes it possible to process the workpiece 10 with the laser beam LB relatively scanning the workpiece 10. For example, the surface of the workpiece 10 is scribed, so that the workpiece 10 can be divided.
In the laser processing apparatus 50, at the time of the processing, the laser beam LB can be irradiated as needed with the focus position being in a defocused state that it is intentionally shifted from the surface of the workpiece 10.
<Laser Beam Source>
As for the laser beam source SL, it is preferable to use an Nd:YAG laser. An ND:YVO4 laser or another solid-state laser may be used. Further, the laser beam source SL preferably has a Q switch.
Adjustment of a wavelength, an output, a repetition frequency of a pulse, a pulse width and the like of the laser beam LB emitted from the laser beam source SL is realized by an irradiation control part 23 of the controller 1. When a predetermined setting signal according to processing mode setting data D2 is transmitted from a processing part 25 to the irradiation control part 23, the irradiation control part 23 sets an irradiating condition of the laser beam LB according to the setting signal.
In the preferred embodiment of the present invention, it is preferable that the wavelength of the laser beam LB is in a wavelength range of 150 nm to 563 nm. When the Nd:YAG laser is used as the laser beam source SL, a triple harmonic (wavelength: about 355 nm) of it is preferably used. Further, it is preferable that the repetition frequency of the pulse is 10 kHz to 200 kHz and the pulse width is 50 nsec or more.
It is preferable that the laser beam LB is focused to a beam diameter of about 1 μm to 10 μm by a condensing lens 18 so as to be irradiated. In this case, a peak power density in the irradiation of the laser beam LB is about 1 GW/cm2 to 10 GW/cm2.
A polarization state of the laser beam LB emitted from the laser beam source SL may be circular polarization or linear polarization. In the case of the linear polarization, however, from viewpoints of a curve of a processed cross section and an energy absorption rate in a crystalline workpiece material, it is preferable that a polarizing direction and a scanning direction are approximately parallel with each other, for instance, an angle made by these directions is within ±1°. Further, when emitted light is linear polarized light, it is preferable that the laser processing apparatus 50 has an attenuator, not shown. The attenuator is arranged on a suitable position of an optical path of the laser beam LB, and adjusts intensity of the emitted laser beam LB.
<Illumination System and Observation System>
The observing part 50B is constituted so that, while irradiating epi-illumination light L1 from an epi-illumination light source S1 and oblique transmissive illumination light L2 from an oblique illumination light source S2 to the workpiece 10 placed on the stage 7 from above the stage 7 in a superimposing manner, front-surface observation with a front-surface observing unit 6 from an upper side of the stage 7 and rear-surface observation with a rear-surface observing unit 16 from a lower side of the stage 7 can be performed.
Concretely, the epi-illumination light L1 emitted from the epi-illumination light source S1 is reflected by a half mirror 9 provided into the lens barrel, not shown, and is irradiated to the workpiece 10. The observing part 50B has the front-surface observing unit 6 including a CCD camera 6a provided above the half mirror 9 (above the lens barrel) and a monitor 6B connected to the CCD camera 6a. As a result, a bright field image of the workpiece 10 can be observed at a real time with the epi-illumination light L1 being emitted.
In the observing part 50B, a rear-surface observing unit 16 is comprised including a CCD camera 16a provided below the stage 7, more preferably, provided below a half mirror 19 described later (below the lens barrel) and a monitor 16b connected to the CCD camera 16a. One monitor may be commonly used as the monitor 16b and the monitor 6b of the front-surface observing unit 6.
Further, coaxial illumination light L3 emitted from a coaxial illumination light source S3 provided below the stage 7 may be reflected by the half mirror 19 provided into the lens barrel, not shown, and is condensed by the condensing lens 18. Thereafter, the coaxial illumination light L3 may be irradiated to the workpiece 10 via the stage 7. It is more preferable that an oblique illumination light source S4 is provided below the stage 7 and oblique illumination light L4 can be irradiated to the workpiece 10 via the stage 7. The coaxial illumination light source S3 and the oblique illumination light source S4 can be suitably used for a case where the workpiece 10 is observed from the rear surface, such as a case where the observation from the front surface side is difficult due to reflection from an opaque metal layer present on the front surface of the workpiece 10.
<Controller>
The controller 1 further comprises a controlling part 2 controlling the operation of each part described above that realizes the processing of the workpiece 10 in various aspects, described later, and a storing part 3 storing a program 3p for controlling the operation of the laser processing apparatus 50 and various data referred to at the time of the processing.
The controlling part 2 is realized by a general-purpose computer such as a personal computer or a microcomputer. The program 3p stored in the storing part 3 is loaded into and executed by the computer, and thus various components are realized as functional components of the controlling part 2.
Concretely, the controlling part 2 mainly includes a drive control part 21, an imaging control part 22, an irradiation control part 23, an absorption control part 24 and a processing part 25. The drive control part 21 controls various operations of driving parts relating to the processing such as driving of the stage 7 by means of the moving mechanism 7m and a focusing operation of the condensing lens 18. The imaging control part 22 controls imaging by means of the CCD cameras 6a and 16a. The irradiation control part 23 controls irradiation of the laser beam LB from the laser beam source SL. The absorption control part 24 controls the operation for absorbing and fixing the workpiece 10 to the stage 7 by means of the sucking unit 11. The processing part 25 executes the processing on the position to be processed according to the given processing position data D1 and processing mode setting data D2.
The storing part 3 is realized by a storage medium such as ROM, RAM and a hard disk. The storing part 3 may be realized by the component of the computer realizing the controlling part 2, or a hard disk or the like may be provided separately from the computer.
It is preferable that various input instructions given by an operator to the laser processing apparatus 50 are performed by using GUI realized in the controller 1. For example, a processing menu is provided as GUI by a function of the processing part 25.
<Alignment Operation>
In the laser processing apparatus 50, prior to the processing, an alignment operation for finely adjusting an arrangement position of the workpiece 10 is executable in the observing part 50B. The alignment operation is a process for matching an XY coordinate axis determined in the workpiece 10 with a coordinate axis of the stage 7. The alignment operation can be performed by applying a publicly-known technique, and may be suitably performed according to a processing pattern. For example, when a repetition pattern is formed on the surface of the workpiece 10 such that a lot of device chips manufactured by using one mother substrate are cut out, a pattern matching method is used to realize a suitable alignment operation. In this case, as schematically described below, images of a plurality of alignment marks formed on the workpiece 10 are acquired by the CCD camera 6a or 16a, the processing part 25 specifies an alignment amount based on a relative relationship among the imaging positions of the imaged images, and the driving control part 21 allows the moving mechanism 7m to move the stage 7 according to the alignment amount. As a result, the alignment is realized.
The alignment operation is performed so that the processing position in the processing is accurately specified. After the alignment operation is completed, the stage 7 on which the workpiece 10 is placed is moved to the laser beam irradiating part 50A, and the processing is performed by irradiating the laser beam LB. The movement of the stage 7 from the observing part 50B to the laser beam irradiating part 50A is ensured so that a processing planned position presumed at the time of the alignment operation does not shift from the actual processing position.
<Processing Mode>
The laser processing apparatus 50 according to the preferred embodiment is characteristic in that the processing (laser processing) by (relatively) scanning with the laser beam LB is performable in various processing modes. This is realized by varying a combination of the irradiating condition of the laser beam LB from the laser beam source SL and the scanning condition of the laser beam LB to the workpiece 10 by means of the movement of the stage 7.
The processing mode is roughly divided into a continuous mode for continuously irradiating the laser beam LB along a division planned position under the irradiating condition that processing sections vertical to the scanning direction on any position in the scanning direction of the laser beam LB is approximately uniform, and a modulating mode for irradiating the laser beam LB under the irradiating condition that an irradiated range of the laser beam LB on the surface of the workpiece is modulated (periodically changes). The modulating mode includes various aspects whose irradiating condition and scanning condition of the laser beam vary, and the laser processing apparatus 50 can execute at least one of them.
As schematically described below, the continuous mode is a mode for forming a uniform processed area (or processing trace) along a division planned line L. The modulating mode is a mode for forming a processed area (or processing trace) having an uneven shape along the division planned line L.
In the case of eliminating process, a cross section of a processed groove corresponds to a processing cross section, and in the case of a meting alteration method, a cross section of an affected region corresponds to the processing cross section.
It is preferable that the processing mode can be selected according to the processing menu presented to be usable for an operator in the controller 1 by the function of the processing part 25. The processing position data D1 including a position of the division planned line L (
The processing in the continuous mode is the publicly-known processing to be performed in the conventional laser processing apparatuses disclosed in Japanese Patent Application Laid-Open No. 2004-9139 and International Publication No. 2006/062017. For this reason, the detailed description thereof is omitted in the preferred embodiment. The following describes in detail the processing in the modulating mode specific to the laser processing apparatus 50 according to the preferred embodiment.
<First Modulating Mode: Laser Beam Irradiation for Discrete Beam Spot>
When the repetition frequency of the laser beam is R (kHz), one laser pulse is generated from the laser beam source SL for each 1/R (msec). If the stage 7 on which the workpiece 10 is placed is moved at a speed V (mm/sec), while a certain pulse is generated and a next laser pulse is generated, the workpiece 10 moves by V×(1/R)=V/R (μm). Therefore, the interval between a certain beam center position of the laser pulse and a beam center position of a laser pulse generated next, namely, the interval of the beam spot centers Δ (μm) is determined as Δ=V/R.
For this reason, when a beam diameter D on the surface of the workpiece is larger than Δ=V/R, individual laser pulses are overlapped with each other, but when the beam diameter D is smaller than Δ=V/R, individual laser pulses are not overlapped with each other. The first modulating mode is a mode for performing laser processing utilizing this.
In the first modulating mode, the laser beam LB is irradiated under the irradiating condition that the beam spot BS of the laser beam LB per unit pulse is discretely positioned in the direction of the division planned line L, namely, under the irradiating condition that the irradiating state periodically changes. This is realized when the beam diameter D and the interval of the beam spot centers Δ=V/R hold a relationship D<Δ. Concretely, the irradiating condition of the laser beam and the drive condition of the stage 7 are described in the processing mode setting data D2 so that they can be set in ranges of 10 (kHz)≦R≦200 (kHz), 30 (mm/sec)≦V≦1000 (mm/sec), D<V/R and W/4 (μm)≦V/R≦W/2 (μm). W represents a processing planned width in a direction vertical to the division planned line L.
Discrete positioning of the beam spots BS at the time of scanning by means of the laser beam LB along the direction of the division planned line L means that a place to which the laser beam LB is irradiated and a place to which the laser beam LB is not irradiated are present in the direction of the division planned line L. Therefore, this corresponds to the aspect of irradiating the laser beam LB where the irradiated range on the surface of the workpiece is modulated (periodically changed).
When scanning by means of the laser beam is performed under such a condition, the processed region RE having shapes shown in
More specifically, the processed region RE is continuous on the surface of the workpiece 10, whereas a width and a cross-section shape in the direction vertical to the division planned line L vary according to positions in the direction of the division planned line L (x axial direction) as shown in the cross-sectional views taken along lines B-B′, C-C′ and D-D′ of
From another standpoint, as shown in the cross section taken along line A-A′ of
In any cases, the processed region RE has unevenness on an xy cross section and a zx cross section, namely, along the x axial direction. The pitch of the unevenness is about a few μm to several tens of μm, even though it varies according to the irradiating condition of the laser beam LB and the drive condition of the stage 7.
Concrete values of V and R may be suitably determined in consideration of a material, an absorption factor, a heat conductivity and a melt point of the workpiece 10. Further, the irradiation energy of the pulse may be suitably determined within a range of 10 μJ to 1000 μJ.
However, when V/R<W/4 (μm), the overlapping of the unit processed regions REu becomes large and thus a difference between the processing planned width and the actual processing width becomes small. As a result, a difference between this case and the processing in the continuous mode is reduced. On the other hand, when V/R>W/2 (μm), a distance between adjacent beam spots becomes too large, and thus the individual unit processed regions REu are not continuously adjacent. As a result, this case is not preferable.
<Second Modulating Mode: Energy Modulation>
The first modulating mode is a mode characterized in that the processing is performed under the condition that V/R>D. However, the second modulating mode is a mode for performing the processing under the condition that V/R≦D. That is to say, this is the processing mode that can be used even under the condition that the laser beam LB is irradiated with the adjacent beam spots overlapping with each other.
In general, as the irradiation energy E of the laser pulse to be irradiated is stronger, the workpiece 10 is processed up to a deeper region in a thickness-wise direction, and the processing range on the surface is widened. The second modulating mode is a processing mode utilizing this.
Concretely, Emin and Emax are determined so that 5 (μJ)≦Emin≦100 (μJ) and 20 (μJ)≦Emax≦1000 (μJ). Further, in the second mode, the values R and V are set so that ranges of 50 (kHz)≦R≦200 (kHz) and 50 (mm/sec)≦V≦1000 (mm/sec) are satisfied. Further, it is preferable that a modulation cycle is about 2 μm to 20 μm. In the second modulation mode, these setting ranges are described in the processing mode setting data D2.
As is clear from
<Third Modulating Mode: Scanning by Means of the Laser Beam in Direction Perpendicular to Division Planned Line>
The third modulating mode is a processing mode for performing the scanning by means of the laser beam LB in the direction perpendicular to the division planned line and simultaneously irradiating the laser beam LB so that the beam spots BS for unit pulse are discretely located.
A distance between a beam spot center at the time of generating a certain laser pulse and a beam spot center at the time of generating a next laser pulse is matched with a scanning width p (μm) in the y axial direction of the laser beam LB. In this case, since one laser pulse is emitted from the laser beam source SL at each 1/R (msec), when the scanning speed in the y axial direction is p/(1/R)=pR, as shown in
At this time, the reciprocating scanning by means of the laser beam LB is performed only in the y axial direction, but since the workpiece 10 moves to the x axial direction, the beam spots BS are discretely located so that Δ=V/R similarly to the first modulating mode. That is to say, the irradiating state of the laser beam LB periodically changes.
As a result, as shown in
In the case of the third modulating mode, the irradiated position and the irradiated range of the laser beam LB in the y axial direction change along the direction of the division planned line L (x axial direction) (a non-irradiated position is also present). Therefore, this case also corresponds to the aspect of irradiating the laser beam LB where the irradiated range on the surface of the workpiece is modulated (periodically changed).
As a result of the irradiation of the laser beam LB in the third modulating mode, the processed region RE having a surface shape shown in
In this case, the processed region RE is continuous on the surface of the workpiece 10, whereas its width and its cross-section shape in the direction vertical to the division planned line L vary according to positions in the direction of the division planned line L (x axial direction). That is to say, the processed region RE has a shape such that the state of the cross section (yz cross section) vertical to the x axial direction changes in the x axial direction, while it has a continuous portion in the direction of the division planned line L (x axial direction).
Not shown but the processed region RE obtained in the third modulating mode also includes a continuous region that is continuous in the x axial direction near the surface of the workpiece 10 and a discontinuous region that is continuous to the continuous region in the y axial direction but is discontinuous itself in the x axial direction.
That is to say, the processed region RE obtained in the third modulating mode also has unevenness on the xy cross section and the zx cross section, namely, along the x axial direction. The pitch of the unevenness is about a few μm to several tens of μm, even though it varies according to the emitting condition of the laser beam LB and the drive condition of the stage 7.
In the third modulating mode, since the beam spots BS per unit pulse are discretely located, the beam diameter D, the interval of the beam spot centers Δ=V/R and the scanning width hold a relationship that D<(Δ2+P2)1/2. Further, the irradiating condition of the laser beam and the drive condition of the stage 7 are described in the processing mode setting data D2 so as to be settable within ranges of 10 (kHz)≦R≦200 (kHz) and 30 (mm/sec)≦V≦1000 (mm/sec). It is to be noted that 1 (μm) b≦p≦3 (μm). For example, it is preferable that p is set to about 1.5 μm. The concrete values V and R may be suitably determined in consideration of the material, the absorption factor, the head conductivity and the melt point of the workpiece 10. Further, the irradiation energy of the pulse may be suitably determined within the range of 10 μJ to 1000 μJ.
In the third modulating mode, the beam spots BS per unit pulse are discretely located, but it is possible to perform the processing with the adjacent beam spots being overlapped with each other, while the scanning by means of the laser beam LB is being performed in the direction perpendicular to the division planned line L.
<Forming of Division Starting Point in the Modulating Mode>
The processing in the first to third modulating modes is suitable particularly for forming a division starting point in order to divide the workpiece 10 that a light-emitting element structure such as an LED structure is formed on a hard or brittle and optically transparent substrate such as sapphire, GaN or SiC, into a unit of chip (divided piece).
That is to say, the processed region RE having the uneven shape with a fine pitch of about a few μm is formed by using the above modulating mode, and a workpiece is broken at the processed region as the division starting point so that chips are obtained. Such break can be realized by exerting, from the upper surface of the workpiece 10, forces on opposite sides with the processed region RE interposed therebetween, in the opposite directions with the processed region RE as an axis. In this case, the division advances from a bottom end portion of the processed region RE as the starting point to a lower portion of the workpiece 10. As a result, a break surface approximately vertical to upper and lower surfaces of the workpiece 10 is formed.
Although the portion where the processed region RE has been formed remains as a processing trail, this portion has unevenness formed as a result of the processing in the modulating mode, and thus total reflection derived from the shape of the portion hardly occurs. As a result, the light absorption on this portion is repressed, and emitted light in this portion is efficiently transmitted to the outside.
As described above, according to the preferred embodiment, the processed region as the division starting point at the time of the dividing a workpiece can be formed so as to have a shape continuous on the surface side but discontinuous on a bottom portion by using any one of the first to third modulating modes. Accordingly, when the light emitting element structure as the workpiece is divided, light emitting element chips with excellent light extracting efficiency in which light absorptive capacity on the processing trail is repressed can be obtained.
In
In
While the invention has been shown and described in detail, the foregoing description is in all aspects illustrative and not restrictive. It is therefore understood that numerous modifications and variations can be devised without departing from the scope of the invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| JP2009-248776 | Oct 2009 | JP | national |
