Claims
- 1. A lateral transistor, comprising:
- a body of semiconductor material including a device region of a first conductivity type defining a surface;
- a mesa patterned in said surface of said device region including a first transistor region of said first conductivity type bounded on generally opposite sides by second and third transistor regions of second conductivity type;
- first and second regions of insulating material disposed in and generally flush with said surface of said device region spaced from each of said second and third transistor regions, respectively, so as to form first and second trenches therebetween;
- first and second layers of conductive material overlying said first and second regions of insulating material, respectively, and including edges generally adjoining the tops of said first and second trenches, respectively; and
- first and second regions of doped conductive material filling said first and second trenches, respectively, and forming conductive links between the second and third transistor regions and the first and second layers of conductive material, respectively.
- 2. A lateral transistor in accordance with claim 1 and further including first and second regions of insulating material underlying each of the first and second regions of doped conductive material in each of said first and second trenches, respectively.
- 3. A lateral transistor in accordance with claim 2 and further including:
- a buried region of said first conductivity type disposed in contact with the bottom of said first transistor region and extending laterally thereto; and
- a reachthrough region of said first conductivity type extending from the surface of said body into contact with said buried region and spaced from said first, second, and third transistor regions.
- 4. A lateral transistor in accordance with claim 1 and further including first and second metal contacts to said first and second layers of conductive material, respectively, for making electrical connections thereto.
Parent Case Info
This application is a division of Ser. No. 07/337,802, filed Apr. 13, 1989, now U.S. Pat. No. 4,965,217.
US Referenced Citations (6)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0052038 |
Oct 1981 |
EPX |
0152116 |
Feb 1985 |
EPX |
Non-Patent Literature Citations (1)
Entry |
IBM Technical Disclosure Bulletin, vol. 13, No. 6, Nov. 1970, p. 1457, "Lateral PNP with Gain Bandwidth Product". |
Divisions (1)
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Number |
Date |
Country |
Parent |
337802 |
Apr 1989 |
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