Lateral transistors

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CPC
H01L29/6625

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/6625Lateral transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Bipolar transistor and gate structure on semiconductor fin and meth...
- Patent number 12,176,427
- Issue date Dec 24, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices, semiconductor structures and methods for fab...
- Patent number 12,176,346
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Repeated emitter design for achieving scalable lateral PNP behavior
- Patent number 12,166,077
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Aravind Appaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 12,159,926
- Issue date Dec 3, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistors
- Patent number 12,107,124
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making triple well isolated diode
- Patent number 12,074,208
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistors
- Patent number 12,040,388
- Issue date Jul 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge (ESD) device with improved turn-on voltage
- Patent number 12,027,587
- Issue date Jul 2, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kyongjin Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tiled lateral BJT
- Patent number 11,973,112
- Issue date Apr 30, 2024
- Silanna Asia Pte Ltd
- Vadim Kushner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistors with an airgap spacer
- Patent number 11,967,636
- Issue date Apr 23, 2024
- Global Foundries U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,967,635
- Issue date Apr 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based lateral bipolar junction transistor with reduced base res...
- Patent number 11,967,637
- Issue date Apr 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure with base protruding from emitter/coll...
- Patent number 11,961,901
- Issue date Apr 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device having an electrostatic dis...
- Patent number 11,929,362
- Issue date Mar 12, 2024
- SK hynix Inc.
- Joung Cheul Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistors with a back-gate
- Patent number 11,923,417
- Issue date Mar 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistors including a graded silicon-ger...
- Patent number 11,916,136
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with base layer of varying hor...
- Patent number 11,908,898
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor with emitter and collector regions inclu...
- Patent number 11,894,450
- Issue date Feb 6, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with inner and outer spacers a...
- Patent number 11,888,050
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John L. Lemon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure on semiconductor fin and methods to fo...
- Patent number 11,881,395
- Issue date Jan 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with superlattice layer and me...
- Patent number 11,862,717
- Issue date Jan 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,843,034
- Issue date Dec 12, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure on semiconductor fin and methods to fo...
- Patent number 11,843,044
- Issue date Dec 12, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor including a stress layer and me...
- Patent number 11,837,653
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,810,969
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure with emitter/collector contact to dope...
- Patent number 11,804,541
- Issue date Oct 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with marker layer for emitter...
- Patent number 11,799,021
- Issue date Oct 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with base over semiconductor b...
- Patent number 11,784,224
- Issue date Oct 10, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge (ESD) device with improved turn-on voltage
- Patent number 11,728,381
- Issue date Aug 15, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kyongjin Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 11,710,776
- Issue date Jul 25, 2023
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTROSTATIC DISCHARGE CIRCUITRY FOR A HIGH-VOLTAGE SEMICONDUCTOR...
- Publication number 20240429310
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Fu HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20240395869
- Publication date Nov 28, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES, SEMICONDUCTOR STRUCTURES AND METHODS FOR FAB...
- Publication number 20240387522
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Chung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENHANCED AVALANCHE RUGGEDNESS
- Publication number 20240371926
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- LIANG-YU SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEHTOD OF MAKING TRIPLE WELL ISOLATED DIODE AND TRIPLE WELL ISOLATE...
- Publication number 20240371966
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION DEVICES FOR BI-DIRECTIONAL CURRE...
- Publication number 20240363740
- Publication date Oct 31, 2024
- GLOBALFOUNDRIES U.S. Inc.
- SAGAR PREMNATH KARALKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTORS
- Publication number 20240297242
- Publication date Sep 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240243187
- Publication date Jul 18, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS OF OPERATING A PNP BI-DIRECTIONAL DOUBLE-BASE B...
- Publication number 20240154029
- Publication date May 9, 2024
- IDEAL POWER INC.
- R. Daniel BRDAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR STRUCTURES
- Publication number 20240145466
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zi-Ang SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND GATE STRUCTURE ON SEMICONDUCTOR FIN AND METH...
- Publication number 20240088272
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20240021713
- Publication date Jan 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A NOVEL TRANSISTOR DEVICE
- Publication number 20240021712
- Publication date Jan 18, 2024
- Search For The Next, LTD.
- David SUMMERLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230387208
- Publication date Nov 30, 2023
- STMicroelectronics (Crolles 2) SAS
- Pascal CHEVALIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE (ESD) DEVICE WITH IMPROVED TURN-ON VOLTAGE
- Publication number 20230335593
- Publication date Oct 19, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kyongjin HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET SEMICONDUCTOR STRUCTURE INCLUDING AT LEAST ONE BIPOLAR JU...
- Publication number 20230275083
- Publication date Aug 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTORS INCLUDING A GRADED SILICON-GER...
- Publication number 20230275145
- Publication date Aug 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE WITH EMITTER/COLLECTOR CONTACT TO DOPE...
- Publication number 20230231040
- Publication date Jul 20, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20230197787
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE WITH BASE PROTRUDING FROM EMITTER/COLL...
- Publication number 20230178637
- Publication date Jun 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR WITH EMITTER AND COLLECTOR REGIONS INCLU...
- Publication number 20230155011
- Publication date May 18, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH A BASE LAYER PARTICIPATING IN A D...
- Publication number 20230137751
- Publication date May 4, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES, SEMICONDUCTOR STRUCTURES AND METHODS FOR FAB...
- Publication number 20230127579
- Publication date Apr 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Chung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTORS WITH AN AIRGAP SPACER
- Publication number 20230120538
- Publication date Apr 20, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tiled Lateral BJT
- Publication number 20230124961
- Publication date Apr 20, 2023
- Silanna Asia Pte Ltd
- Vadim Kushner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTORS WITH A BACK-GATE
- Publication number 20230112235
- Publication date Apr 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230098207
- Publication date Mar 30, 2023
- DENSO CORPORATION
- Syogo IKEURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FO...
- Publication number 20230098557
- Publication date Mar 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTORS HAVING AN EMITTER EXTENSION AN...
- Publication number 20230092435
- Publication date Mar 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- MANKYU YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH INNER AND OUTER SPACERS A...
- Publication number 20230083044
- Publication date Mar 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS

Lateral transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bipolar transistor and gate structure on semiconductor fin and meth...

Semiconductor devices, semiconductor structures and methods for fab...

Repeated emitter design for achieving scalable lateral PNP behavior

Lateral bipolar transistor

Bipolar transistors

Method of making triple well isolated diode

Lateral bipolar transistors

Electrostatic discharge (ESD) device with improved turn-on voltage

Tiled lateral BJT

Lateral bipolar junction transistors with an airgap spacer

Lateral bipolar transistor

Fin-based lateral bipolar junction transistor with reduced base res...

Bipolar transistor structure with base protruding from emitter/coll...

Semiconductor integrated circuit device having an electrostatic dis...

Lateral bipolar junction transistors with a back-gate

Lateral bipolar junction transistors including a graded silicon-ger...

Lateral bipolar transistor structure with base layer of varying hor...

Lateral bipolar transistor with emitter and collector regions inclu...

Lateral bipolar transistor structure with inner and outer spacers a...

Bipolar transistor structure on semiconductor fin and methods to fo...

Lateral bipolar transistor structure with superlattice layer and me...

Lateral bipolar transistor

Bipolar transistor structure on semiconductor fin and methods to fo...

Lateral bipolar junction transistor including a stress layer and me...

Lateral bipolar transistor

Bipolar transistor structure with emitter/collector contact to dope...

Lateral bipolar transistor structure with marker layer for emitter...

Lateral bipolar transistor structure with base over semiconductor b...

Electrostatic discharge (ESD) device with improved turn-on voltage

Bipolar transistor

Patents Applicationslast 30 patents

ELECTROSTATIC DISCHARGE CIRCUITRY FOR A HIGH-VOLTAGE SEMICONDUCTOR...

BIPOLAR TRANSISTORS

SEMICONDUCTOR DEVICES, SEMICONDUCTOR STRUCTURES AND METHODS FOR FAB...

SEMICONDUCTOR DEVICE WITH ENHANCED AVALANCHE RUGGEDNESS

MEHTOD OF MAKING TRIPLE WELL ISOLATED DIODE AND TRIPLE WELL ISOLATE...

ELECTROSTATIC DISCHARGE PROTECTION DEVICES FOR BI-DIRECTIONAL CURRE...

LATERAL BIPOLAR TRANSISTORS

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

METHODS AND SYSTEMS OF OPERATING A PNP BI-DIRECTIONAL DOUBLE-BASE B...

BIPOLAR JUNCTION TRANSISTOR STRUCTURES

BIPOLAR TRANSISTOR AND GATE STRUCTURE ON SEMICONDUCTOR FIN AND METH...

LATERAL BIPOLAR TRANSISTOR

A NOVEL TRANSISTOR DEVICE

LATERAL BIPOLAR TRANSISTOR

ELECTROSTATIC DISCHARGE (ESD) DEVICE WITH IMPROVED TURN-ON VOLTAGE

FORKSHEET SEMICONDUCTOR STRUCTURE INCLUDING AT LEAST ONE BIPOLAR JU...

LATERAL BIPOLAR JUNCTION TRANSISTORS INCLUDING A GRADED SILICON-GER...

BIPOLAR TRANSISTOR STRUCTURE WITH EMITTER/COLLECTOR CONTACT TO DOPE...

BIPOLAR TRANSISTORS

BIPOLAR TRANSISTOR STRUCTURE WITH BASE PROTRUDING FROM EMITTER/COLL...

LATERAL BIPOLAR TRANSISTOR WITH EMITTER AND COLLECTOR REGIONS INCLU...

BIPOLAR JUNCTION TRANSISTORS WITH A BASE LAYER PARTICIPATING IN A D...

SEMICONDUCTOR DEVICES, SEMICONDUCTOR STRUCTURES AND METHODS FOR FAB...

LATERAL BIPOLAR JUNCTION TRANSISTORS WITH AN AIRGAP SPACER

Tiled Lateral BJT

LATERAL BIPOLAR JUNCTION TRANSISTORS WITH A BACK-GATE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FO...

LATERAL BIPOLAR JUNCTION TRANSISTORS HAVING AN EMITTER EXTENSION AN...

LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH INNER AND OUTER SPACERS A...