Light emitting device

Abstract
A light emitting device can include a substrate, electrodes provided on the substrate, a light emitting diode configured to emit light, the light emitting diode being provided on one of the electrodes, phosphors configured to change a wavelength of the light, and an electrically conductive device configured to connect the light emitting diode with another of the plurality of electrodes. The phosphors can substantially cove at least a portion of the light emitting diode. The phosphor may include aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate-silicates, lead and/or copper doped phosphates, or any combination thereof.
Description
BACKGROUND OF THE INVENTION

1. Field of the Invention


The invention relates to light emitting devices and more particularly to light emitting devices including at least one light-emitting diode and phosphor, the phosphor including lead and/or copper doped chemical compounds and converting the wavelength of light.


2. Description of the Related Art


Light emitting devices (LEDs), which used to be used for electronic devices, are now used for automobiles and illumination products. Since light emitting devices have superior electrical and mechanical characteristics, demands for light emitting devices have been increased. In connection to this, interests in white LEDs are increasing as an alternative to fluorescent lamps and incandescent lamps.


In LED technology, solution for realization of white light is proposed variously. Normally, realization of white LED technology is to put the phosphor on the light-emitting diode, and mix the primary emission from the light emitting diode and the secondary emission from the phosphor, which converts the wavelength. For example, as shown in WO 98/05078 and WO 98/12757, use a blue light emitting diode, which is capable of emitting a peak wavelength at 450-490 nm, and YAG group material, which absorbs light from the blue light emitting diode and emits yellowish light (mostly), which may have different wavelength from that of the absorbed light.


However, in such a usual white LED, color temperature range is narrow which is between about 6,000-8,000K, and CRI (Color Rendering Index) is about 60 to 75. Therefore, it is hard to produce the white LED with color coordination and color temperature that are similar to those of the visible light. It is one of the reasons why only white light color with a cold feeling could be realized. Moreover, phosphors which are used for white LEDs are usually unstable in the water, vapor or polar solvent, and this unstableness may cause changes in the emitting characteristics of white LED.


SUMMARY OF THE INVENTION

Wavelength conversion light emitting device are provided. In one embodiment consistent with this invention, a device is provided for emitting light. The device can include a substrate, a plurality of electrodes provided on the substrate, a light emitting diode configured to emit light, the light emitting diode being provided on one of the plurality of electrodes, phosphors configured to change a wavelength of the light, the phosphors substantially covering at least a portion of the light emitting diode, and an electrically conductive device configured to connect the light emitting diode with another of the plurality of electrodes.


In another embodiment consistent with this invention, a light emitting device can include a plurality of leads, a diode holder provided at the end of one of the plurality of lead, a light emitting diode provided in the diode holder, the light emitting diode including a plurality of electrodes, phosphors configured to change a wavelength of the light, the phosphors substantially covering at least a portion of the light emitting diode; and an electrically conductive device configured to connect the light emitting device with another of the plurality of leads.


In another embodiment consistent with this invention, a light emitting device may include a housing, a heat sink at least partially provided in the housing, a plurality of lead frames provided on the heat sink, a light emitting diode mounted on one of the plurality of lead frames, phosphors configured to change a wavelength of the light, the phosphors substantially covering at least a portion of the light emitting diode, and an electrically conductive device configured to connect the light emitting diode with another of the plurality of lead frames.


The phosphor in consistent with this invention may include aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate-silicates, lead and/or copper doped phosphates, or any combination thereof. Formulas for phosphors consistent with this invention are also provided.




BRIEF DESCRIPTION OF THE DRAWINGS

Further aspects of the invention may be apparent upon consideration of the following detailed description, taken in conjunction with the accompanying drawings, in which like reference characters refer to like parts throughout, and in which:



FIG. 1 shows a side cross-sectional view of an illustrative embodiment of a portion of a chip-type package light emitting device consistent with this invention;



FIG. 2 shows a side cross-sectional view of an illustrative embodiment of a portion of a top-type package light emitting device consistent with this invention;



FIG. 3 shows a side cross-sectional view of an illustrative embodiment of a portion of a lamp-type package light emitting device consistent with this invention;



FIG. 4 shows a side cross-sectional view of an illustrative embodiment of a portion of a light emitting device for high power consistent with this invention;



FIG. 5 shows a side cross-sectional view of another illustrative embodiment of a portion of a light emitting device for high power consistent with this invention;



FIG. 6 shows emitting spectrum of a light emitting device with luminescent material consistent with this invention; and



FIG. 7 shows emitting spectrum of the light emitting device with luminescent material according to another embodiment of the invention.




DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Refer to the attached drawing, the wavelength conversion light emitting device is going to be explained in detail, and the light emitting device and the phosphor are separately explained for easiness of explanation as below.


(Light Emitting Device)



FIG. 1 shows a side cross-sectional view of an illustrative embodiment of a portion of a chip-type package light emitting device consistent with this invention. The chip-type package light emitting device may comprise at least one light emitting diode and a phosphorescent substance. Electrodes 5 may be formed on both sides of substrate 1. Light emitting diode 6 emitting light may be mounted on one of the electrodes 5. Light emitting diode 6 may be mounted on electrode 5 through electrically conductive paste 9. An electrode of light emitting diode 6 may be connected to electrode pattern 5 via an electrically conductive wire 2.


Light emitting diodes may emit light with a wide range of wavelengths, for example, from ultraviolet light to visible light. In one embodiment consistent with this invention, a UV light emitting diode and/or blue light emitting diode may be use.


Phosphor, i.e., a phosphorescent substance, 3 may be placed on the top and side faces of the light emitting diode 6. The phosphor in consistent with this invention may include lead and/or copper doped aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate-silicates, lead and/or copper doped phosphates, or any combination thereof. Phosphor 3 converts the wavelength of the light from the light emitting diode 6 to another wavelength or other wavelengths. In one embodiment consistent with this invention, the light is in a visible light range after the conversion. Phosphor 3 may be applied to light emitting diode 6 after mixing phosphor 3 with a hardening resin. The hardening resin including phosphor 3 may also be applied to the bottom of light emitting diode 6 after mixing phosphor 3 with electrically conductive paste 9.


The light emitting diode 6 mounted on substrate 1 may be sealed with one or more sealing materials 10. Phosphor 3 may be placed on the top and side faces of light emitting diode 6. Phosphor 3 can also be distributed in the hardened sealing material during the production. Such a manufacturing method is described in U.S. Pat. No. 6,482,664, which is hereby incorporated by reference in its entirety.


Phosphor 3 may comprise lead and/or copper doped chemical compound(s). Phosphor 3 may include one or more single chemical compounds. The single compound may have an emission peak of, for example, from about 440 nm to about 500 nm, from about 500 nm to about 590 nm, or from about 580 nm to 700 nm. Phosphor 3 may include one or more single phosphors, which may have an emission peak as exemplified above.


In regard to light emitting device 40, light emitting diode 6 may emit primary light when light emitting diode 6 receives power from a power supply. The primary light then may stimulate phosphor(s) 3, and phosphor(s) 3 may convert the primary light to a light with longer wavelength(s) (a secondary light). The primary light from the light emitting diode 6 and the secondary light from the phosphors 3 are diffused and mixed together so that a predetermined color of light in visible spectrum may be emitted from light emitting diode 6. In one embodiment consistent with this invention, more than one light emitting diodes that have different emission peaks can be mounted together. Moreover, if the mixture ratio of phosphors is adjusted properly, specific color of light, color temperature, and CRI can be provided.


As described above, if the light emitting diode 6 and the compound included in phosphor 3 are properly controlled then desired color temperature or specific color coordination can be provided, especially, wide range of color temperature, for example, from about 2,000K to about 8,000K or about 10,000K and/or color rendering index of greater than about 90. Therefore, the light emitting devices consistent with this invention may be used for electronic devices such as home appliances, stereos, telecommunication devices, and for interior/exterior custom displays. The light emitting devices consistent with this invention may also be used for automobiles and illumination products because they provide similar color temperatures and CRI to those of the visible light.



FIG. 2 shows a side cross-sectional view of an illustrative embodiment of a portion of a top-type package light emitting device consistent with this invention. A top-type package light emitting device consistent with this invention may have a similar structure as that of the chip type package light emitting device 40 of FIG. 1. The top-type package device may have reflector 31 which may reflect the light from the light emitting diode 6 to the desire direction.


In top-type package light emitting device 50, more than one light emitting diodes can be mounted. Each of such light emitting diodes may have a different peak wavelength from that of others. Phosphor 3 may comprise a plurality of single compounds with different emission peak. The proportion of each of such plurality of compounds may be regulated. Such a phosphor may be applied to the light emitting diode and/or uniformly distributed in the hardening material of the reflector 31. As explained more fully below, the phosphor in consistent with this invention may include lead and/or copper doped aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate-silicates, lead and/or copper doped phosphates, or any combination thereof.


In one embodiment consistent with this invention, the light emitting device of the FIG. 1 or FIG. 2 can include a metal substrate, which may have good heat conductivity. Such a light emitting device may easily dissipate the heat from the light emitting diode. Therefore, light emitting devices for high power may be manufactured. If a heat sink is provided beneath the metal substrate, the heat from the light emitting diode may be dissipated more effectively.



FIG. 3 shows a side cross-sectional view of an illustrative embodiment of a portion of a lamp-type package light emitting device consistent with this invention. Lamp type light emitting device 60 may have a pair of leads 51, 52, and a diode holder 53 may be formed at the end of one lead. Diode holder 53 may have a shape of cup, and one or more light emitting diodes 6 may provided in the diode holder 53. When a number of light emitting diodes are provided in the diode holder 53, each of them may have a different peak wavelength from that of others. An electrode of light emitting diode 6 may be connected to lead 52 by, for example, electrically conductive wire 2.


Regular volume of phosphor 3, which may be mixed in the epoxy resin, may be provided in diode holder 53. As explained more fully below, phosphor 3 may include lead and/or copper doped components.


Moreover, the diode holder may include the light emitting diode 6 and the phosphor 3 may be sealed with hardening material such as epoxy resin or silicon resin.


In one embodiment consistent with this invention, the lamp type package light emitting device may have more than one pair of electrode pair leads.



FIG. 4 shows a side cross-sectional view of an illustrative embodiment of a portion of a light emitting device for high power consistent with this invention. Heat sink 71 may be provided inside of housing 73 of the light emitting device for high power 70, and it may be partially exposed to outside. A pair of lead frame 74 may protrude from housing 73.


One or more light emitting diodes may be mounted one lead frame 74, and an electrode of the light emitting diode 6 and another lead frame 74 may be connected via electrically conductive wire. Electrically conductive pate 9 may be provided between light emitting diode 6 and lead frame 74. The phosphor 3 may be placed on top and side faces of light emitting diode 6.



FIG. 5 shows a side cross-sectional view of another illustrative embodiment of a portion of a light emitting device for high power consistent with this invention.


Light emitting device for high power 80 may have housing 63, which may contain light emitting diodes 6, 7, phosphor 3 arranged on the top and side faces of light emitting diodes 6, 7, one or more heat sinks 61, 62, and one or more lead frames 64. The lead frames 64 may receive power from a power supplier and may protrude from housing 63.


In the light emitting devices for high power 70, 80 in the FIGS. 4 and 5, the phosphor 3 can be added to the paste, which may be provided between heat sink and light emitting devices. A lens may be combined with housing 63, 73.


In a light emitting device for high power consistent with this invention, one or more light emitting diodes can be used selectively and the phosphor can be regulated depending on the light emitting diode. As explained more fully below, the phosphor may include lead and/or copper doped components.


A light emitting device for high power consistent with this invention may have a radiator (not shown) and/or heat sink(s). Air or a fan may be used to cool the radiator.


The light emitting devices consistent with this invention is not limited to the structures described above, and the structures can be modified depending on the characteristics of light emitting diodes, phosphor, wavelength of light, and also applications. Moreover, new part can be added to the structures.


An exemplary phosphor consistent with this invention is as follows.


(Phosphor)


Phosphor in consistence with this invention may include lead and/or copper doped chemical compounds. The phosphor may be excited by UV and/or visible light, for example, blue light. The compound may include Aluminate, Silicate, Antimonate, Germanate, Germanate-silicate, or Phosphate type compounds.


Aluminate type compounds may comprise compounds having formula (1), (2), and/or (5)

a(M′O).b(M″2O).c(M″X).dAl2O3.e(M′″O).f(M″″2O3).g(M′″″oOp).h(M″″″xOy)  (1)

    • wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be one or more monovalent elements, for example, Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M′″ may be one or more divalent elements, for example, Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M″″ may be one or more trivalent elements, for example, Sc, B, Ga, In, and/or any combination thereof; M′″″ may be Si, Ge, Ti, Zr, Mn, V, Nb, Ta, W, Mo, and/or any combination thereof; M″″″ may be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination thereof; X may be F, Cl, Br, J, and/or any combination thereof; 0<a≦2; 0≦b≦2; 0≦c≦2; 0≦d≦8; 0<e≦4; 0≦f≦3; 0≦g≦8; 0<h≦2; 1≦o≦2; 1≦p≦5; 1≦x≦2; and 1≦y≦5.

      a(M′O).b(M″2O).c(M″X).4-a-b-c(M′″O).7(Al2O3).d(B2O3).e(Ga2O3).f(SiO2).g(GeO2).h(M″″xOy)  (2)
    • wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be one or more monovalent elements, for example, Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M′″ may be one or more divalent elements, for example, Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M″″ may be Bi, Sn, Sb, Sc, Y. La, In, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and any combination thereof; X may be F, Cl, Br, J, and any combination thereof; 0<a≦4; 0≦b≦2; 0≦c≦2; 0≦d≦1; 0≦e≦1; 0≦f≦1; 0≦g≦1; 0<h≦2; 1≦x≦2; and 1≦y≦5.


The preparation of copper as well as lead doped luminescent materials may be a basic solid state reaction. Pure starting materials without any impurities, e.g. iron, may be used. Any starting material which may transfer into oxides via a heating process may be used to form oxygen dominated phosphors.


Examples of Preparation:


Preparation of the Luminescent Material Having Formula (3)

Cu0.02Sr3.98Al14O25:Eu  (3)


Starting materials: CuO, SrCO3, Al(OH)3, Eu2O3, and/or any combination thereof.


The starting materials in the form of oxides, hydroxides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, e.g., H3BO3. The mixture may be fired in an alumina crucible in a first step at about 1,200° C. for about one hour. After milling the pre-fired materials a second firing step at about 1,450° C. in a reduced atmosphere for about 4 hours may be followed. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum of about 494 nm.

TABLE 1copper doped Eu2+-activated aluminate comparedwith Eu2+-activated aluminate without copper atabout 400 nm excitation wavelengthCompoundCopper doped compoundwithout copperCu0.02Sr3.98Al14O25:EuSr4Al14O25:EuLuminous density (%)103.1100Wavelength (nm)494493


Preparation of the Luminescent Material Having Formula (4)

Pb0.05Sr3.95Al14O25:Eu  (4)


Starting materials: PbO, SrCO3, Al2O3, Eu2O3, and/or any combination thereof.


The starting materials in form of very pure oxides, carbonates, or other components which may decompose thermically into oxides, may be mixed in stoichiometric proportion together with small amounts of flux, for example, H3BO3. The mixture may be fired in an alumina crucible at about 1,200° C. for about one hour in the air. After milling the pre-fired materials a second firing step at about 1,450° C. in air for about 2 hours and in a reduced atmosphere for about 2 hours may be followed. Then the material may be milled, washed, dried, and sieved. The resulting luminescent material may have an emission maximum of from about 494.5 nm.

TABLE 2lead doped Eu2+-activated aluminate comparedwith Eu2+-activated aluminate without lead atabout 400 nm excitation wavelengthLead doped compoundCompound without leadPb0.05Sr3.95Al14O25:EuSr4Al14O25:EuLuminous density (%)101.4100Wavelength (nm)494.5493









TABLE 3










optical properties of some copper and/or lead doped aluminates excitable by


long wave ultraviolet and/or by visible light and their luminous density in % at 400 nm


excitation wavelength













Luminous density at
Peak wave





400 nm excitation
length of



Possible
compared with
lead/copper
Peak wave length of



excitation
copper/lead not doped
doped materials
materials without


Composition
range(nm)
compounds (%)
(nm)
lead/copper (nm)














Cu0.5Sr3.5Al14O25:Eu
360-430
101.2
495
493


Cu0.02Sr3.98Al14O25:Eu
360-430
103.1
494
493


Pb0.05Sr3.95Al14O25:Eu
360-430
101.4
494.5
493


Cu0.01Sr3.99Al13.995Si0.005O25:Eu
360-430
103
494
492


Cu0.01Sr3.395Ba0.595Al14O25:Eu,
360-430
100.8
494
493


Dy


Pb0.05Sr3.95Al13.95Ga0.05O25:Eu
360-430
101.5
494
494











    • wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M′″ may be B, Ga, In, and/or any combination thereof; M″″ may be Si, Ge, Ti, Zr, Hf, and/or any combination thereof; M′″″ may be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination thereof; 0<a≦1; 0≦b≦2; 0<c≦8; 0≦d≦1; 0≦e≦1; 0<f≦2; 1≦x≦2; and 1≦y≦5.





Example of Preparation:


Preparation of the Luminescent Material Having Formula (6)

Cu0.05Sr0.95Al1.9997Si0.0003O4:Eu  (6)


Starting materials: CuO, SrCO3, Al2O3, SiO2, Eu2O3, and/or any combination thereof.


The starting materials in the form of, for example, pure oxides and/or as carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, AlF3. The mixture may be fired in an alumina crucible at about 1,250° C. in a reduced atmosphere for about 3 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum of about 521.5 nm.

TABLE 4copper doped Eu2+-activated aluminate compared withEu2+-activated aluminate without copper at about400 nm excitation wavelengthCompoundwithoutCopper doped compoundcopperCu0.05Sr0.95Al1.9997Si0.0003O4:EuSrAl2O4:EuLuminous density (%)106100Wavelength (nm)521.5519


Preparation of the Luminescent Material Having Formula (7)

Cu0.12BaMg1.88Al16O27:Eu  (7)


Starting materials: CuO, MgO, BaCO3, Al(OH)3, Eu2O3, and/or any combination thereof.


The starting materials in the form of, for example, pure oxides, hydroxides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, AlF3. The mixture may be fired in an alumina crucible at about 1,420° C. in a reduced atmosphere for about 2 hours. After that the material may be milled, washed, dried, and sieved. The resulting luminescent material may have an emission maximum of about 452 nm.

TABLE 5copper doped Eu2+-activated aluminate comparedwith copper not doped Eu2+-activated aluminateat 400 nm excitation wavelengthComparisonCopper doped compoundwithout copperCu0.12BaMg1.88Al16O27:EuBaMg2Al16O27:EuLuminous density (%)101100Wavelength (nm)452450


Preparation of the Luminescent Material Having Formula (8)

Pb0.1Sr0.9Al2O4:Eu  (8)


Starting materials: PbO, SrCO3, Al(OH)3, Eu2O3, and/or any combination thereof.


The starting materials in form of, for example, pure oxides, hydroxides, and/or carbonates may be mixed in stochiometric proportions together with small amounts of flux, for example, H3BO3. The mixture may be fired in an alumina crucible at about 1,000° C. for about 2 hours in the air. After milling the pre-fired materials a second firing step at about 1,420° C. in the air for about 1 hour and in a reduced atmosphere for about 2 hours may be followed. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum of about 521 nm.

TABLE 6lead doped Eu2+-activated aluminate compared withEu2+-activated aluminate without lead at about400 nm excitation wavelengthLead doped compoundCompound without leadPb0.1Sr0.9Al2O4:EuSrAl2O4:EuLuminous density (%)102100Wavelength (nm)521519


Results obtained in regard to copper and/or lead doped aluminates are shown in table 7.

TABLE 7optical properties of some copper and/or lead doped aluminates excitable bylong wave ultraviolet and/or by visible light and their luminous density in % at 400 nmexcitation wavelengthLuminous density atPeak wavePossible400 nm excitationlength ofexcitationcompared withlead/copperPeak wave length ofrangecopper/lead not dopeddopedmaterials withoutComposition(nm)compounds (%)materials (nm)lead/copper (nm)Cu0.05Sr0.95Al1.9997Si0.0003O4:Eu360-440106  521.5519Cu0.2Mg0.7995Li0.0005Al1.9Ga0.1O4:Eu, Dy360-440101.2482480Pb0.1Sr0.9Al2O4:Eu360-440102521519Cu0.05BaMg1.95Al16O27:Eu, Mn360-400100.5451, 515450, 515Cu0.12BaMg1.88Al16O27:Eu360-400101452450Cu0.01BaMg0.99Al10O17:Eu360-400102.5451449Pb0.1BaMg0.9Al9.5Ga0.5O17:Eu, Dy360-400100.8448450Pb0.08Sr0.902Al2O4:Eu, Dy360-440102.4521519Pb0.2Sr0.8Al2O4:Mn360-440100.8658655Cu0.06Sr0.94Al2O4:Eu360-440102.3521519Cu0.05Ba0.94Pb0.06Mg0.95Al10O17:Eu360-440100.4451449Pb0.3Ba0.7Cu0.1Mg1.9Al16O27:Eu360-400100.8452450Pb0.3Ba0.7Cu0.1Mg1.9Al16O27:Eu, Mn360-400100.4452, 515450, 515


A lead and/or copper doped silicates having formula (9)

a(M′O).b(M″O).c(M′″X).d(M′″2O).e(M″″2O3).f(M′″″oOp).g(SiO2).h(M″″″xOy)  (9)

    • wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M′″ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M″″ may be Al, Ga, In, and/or any combination thereof; M′″″ may be Ge, V, Nb, Ta, W, Mo, Ti, Zr, Hf, and/or any combination thereof; M″″″ may be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination thereof; X may be F; Cl, Br, J, and any combination thereof; 0<a≦; 0<b≦8; 0≦c≦4; 0≦d≦2; 0≦e≦2; 0≦f≦2; 0≦g≦10; 0<h≦5; 1≦o≦2; 1≦p≦5; 1≦x≦2; and 1≦y≦5.


Example of Preparation:


Preparation of the Luminescent Material Having Formula (10)

Cu0.05Sr1.7Ca0.25SiO4:Eu  (10)


Starting materials: CuO, SrCO3, CaCO3, SiO2, Eu2O3, and/or any combination thereof.


The starting materials in the form of pure oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. The mixture may be fired in an alumina crucible at about 1,200° C. in an inert gas atmosphere (e.g., N2 or noble gas) for about 2 hours. Then the material may be milled. After that, the material may be fired in an alumina crucible at about 1,200° C. in a slightly reduced atmosphere for about 2 hours. Then, the material may be milled, washed, dried, and sieved. The resulting luminescent material may have an emission maximum at about 592 nm.

TABLE 8copper doped Eu2+-activated silicatecompared with Eu2+-activated silicatewithout copper at about 400 nm excitation wavelengthCompoundCopper doped compoundwithout copperCu0.05Sr1.7Ca0.25SiO4:EuSr1.7Ca0.3SiO4:EuLuminous density (%)104100Wavelength (nm)592588


Preparation of the Luminescent Material Having Formula (11):

Cu0.2Ba2Zn0.2Mg0.6Si2O7:Eu  (1)


Starting materials: CuO, BaCO3, ZnO, MgO, SiO2, Eu2O3, and/or any combination thereof.


The starting materials in the form of very pure oxides and carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. In a first step the mixture may be fired in an alumina crucible at about 1,100° C. in a reduced atmosphere for about 2 hours. Then the material may be milled. After that the material may be fired in an alumina crucible at about 1,235° C. in a reduced atmosphere for about 2 hours. Then that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 467 nm.

TABLE 9copper doped Eu2+-activated silicatecompared with Eu2+-activated silicatewithout copper at 400 nm excitation wavelengthCompoundCopper doped compoundwithout copperCu0.2Sr2Zn0.2Mg0.6Si2O7:EuSr2Zn2Mg0.6Si2O7:EuLuminous101.5100density (%)Wavelength (nm)467465


Preparation of the Luminescent Material Having Formula (12)

Pb0.1Ba0.95Sr0.95Si0.998Ge0.002O4:Eu  (12)


Starting materials: PbO, SrCO3, BaCO3, SiO2, GeO2, Eu2O3, and/or any combination thereof.


The starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. The mixture may be fired in an alumina crucible at about 1,000° C. for about 2 hours in the air. After milling the pre-fired materials a second firing step at 1,220° C. in air for 4 hours and in reducing atmosphere for 2 hours may be followed. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 527 nm.

TABLE 10lead doped Eu2+-activated silicatecompared with Eu2+-activated silicatewithout lead at about 400 nm excitation wavelengthCompoundwithoutLead doped compoundleadPb0.1Ba0.95Sr0.95Si0.998Ge0.002O4:EuBaSrSiO4:EuLuminous density101.3100(%)Wavelength (nm)527525


Preparation of the Luminescent Material Having Formula (13)

Pb0.25Sr3.75Si3O8Cl4:Eu  (13)


Starting materials: PbO, SrCO3, SrCl2, SiO2, Eu2O3, and any combination thereof.


The starting materials in the form of oxides, chlorides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. The mixture may be fired in an alumina crucible in a first step at about 1,100° C. for about 2 hours in the air. After milling the pre-fired materials a second firing step at about 1,220° C. in the air for about 4 hours and in a reduced atmosphere for about 1 hour may be followed. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 492 nm.

TABLE 11lead doped Eu2+-activated chlorosilicatecompared with Eu2+-activatedchlorosilicate without lead at 400 nm excitation wavelengthCompoundLead doped compoundwithout leadPb0.25Sr3.75Si3O8Cl4:EuSr4Si3O8Cl4:EuLuminous density (%)100.6100Wavelength (nm)492490


Results obtained with respect to copper and/or lead doped silicates are shown in table 12.

TABLE 12optical properties of some copper and/or lead doped rare earth activatedsilicates excitable by long wave ultraviolet and/or by visible light and theirluminous density in % at about 400 nm excitation wavelengthLuminous density atPossible400 nm excitationPeak wave lengthPeak wave lengthexcitationcompared withof lead/copperof materialsrangecopper/lead not dopeddoped materialswithoutComposition(nm)compounds (%)(nm)lead/copper (nm)Pb0.1Ba0.95Sr0.95Si0.998Ge0.002O4:Eu360-470101.3527525Cu0.02(Ba,Sr,Ca,Zn)1.98SiO4:Eu360-500108.2565560Cu0.05Sr1.7Ca0.25SiO4:Eu360-470104592588Cu0.05Li0.002Sr1.5Ba0.448SiO4:Gd, Eu360-470102.5557555Cu0.2Sr2Zn0.2Mg0.6Si2O7:Eu360-450101.5467465Cu0.02Ba2.8Sr0.2Mg0.98Si2O8:Eu, Mn360-420100.8440, 660438, 660Pb0.25Sr3.75Si3O8Cl4:Eu360-470100.6492490Cu0.2Ba2.2Sr0.75Pb0.05Zn0.8Si2O8:Eu360-430100.8448445Cu0.2Ba3Mg0.8Si1.99Ge0.01O8:Eu360-430101444440Cu0.5Zn0.5Ba2Ge0.2Si1.8O7:Eu360-420102.5435433Cu0.8Mg0.2Ba3Si2O8:Eu, Mn360-430103438, 670435, 670Pb0.15Ba1.84Zn0.01Si0.99Zr0.01O4:Eu360-500101512510Cu0.2Ba5Ca2.8Si4O16:Eu360-470101.8495491


With lead and/or copper doped antimonates having formula (14)

a(M′O).b(M″2O).c(M″X).d(Sb2O5).e(M′″O).f(M″″xOy)  (14)

    • wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M′″ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M″″ may be Bi, Sn, Sc, Y, La, Pr, Sm, Eu, Tb, Dy, Gd, and/or any combination thereof; X may be F; Cl, Br, J, and/or any combination thereof; 0<a≦2; 0≦b≦2; 0≦c≦4; 0<d≦8; 0−e≦8; 0≦f≦2; 1≦x≦2; and 1≦y≦5.


Examples of Preparation:


Preparation of the Luminescent Material Having Formula (15)

Cu0.2Mg1.7Li0.2Sb2O7:Mn  (15)


Starting materials: CuO, MgO, Li2O, Sb2O5, MnCO3, and/or any combination thereof.


The starting materials in the form of oxides may be mixed in stoichiometric proportion together with small amounts of flux. In a first step the mixture may be fired in an alumina crucible at about 985° C. in the air for about 2 hours. After pre-firing the material may be milled again. In a second step the mixture may be fired in an alumina crucible at about 1,200° C. in an atmosphere containing oxygen for about 8 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 626 nm.

TABLE 13copper doped antimonate compared with antimonatewithout copper at about 400 nm excitation wavelengthComparisonCopper doped compoundwithout copperCu0.2Mg1.7Li0.2Sb2O7:MnMg2Li0.2Sb2O7:MnLuminous density (%)101.8100Wavelength (nm)652650


Preparation of the Luminescent Material Having Formula (16)

Pb0.006Ca0.6Sr0.394Sb2O6  (16)


Starting materials: PbO, CaCO3, SrCO3, Sb2O5, and/or any combination thereof.


The starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux. In a first step the mixture may be fired in an alumina crucible at about 975° C. in the air for about 2 hours. After pre-firing the material may be milled again. In a second step the mixture may be fired in an alumina crucible at about 1,175° C. in the air for about 4 hours and then in an oxygen-containing atmosphere for about 4 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 637 nm.

TABLE 14lead doped antimonate compared with antimonatewithout lead at 400 nm excitation wavelengthCompoundLead doped compoundwithout leadPb0.006Ca0.6Sr0.394Sb2O6Ca0.6Sr0.4Sb2O6Luminous density (%)102100Wavelength (nm)637638


Results obtained in respect to copper and/or lead doped antimonates are shown in table 15.

TABLE 15optical properties of some copper and/or lead doped antimonates excitableby long wave ultraviolet and/or by visible light and their luminous densityin % at about 400 nm excitation wavelengthLuminous density atPeak wave400 nm excitationlength ofPeak wave lengthPossiblecompared withlead/copperof materialsexcitationcopper/lead not dopeddoped materialswithoutCompositionrange (nm)compounds (%)(nm)lead/copper (nm)Pb0.2Mg0.002Ca1.798Sb2O6F2:Mn360-400102645649Cu0.15Ca1.845Sr0.005Sb1.998Si0.002O7:Mn360-400101.5660658Cu0.2Mg1.7Li0.2Sb2O7:Mn360-400101.8652650Cu0.2Pb0.01Ca0.79Sb1.98Nb0.02O6:Mn360-40098.5658658Cu0.01Ca1.99Sb1.9995V0.0005O7:Mn360-400100.5660657Pb0.006Ca0.6Sr0.394Sb2O6360-400102637638Cu0.02Ca0.9Sr0.5Ba0.4Mg0.18Sb2O7360-400102.5649645Pb0.198Mg0.004Ca1.798Sb2O6F2360-400101.8628630


Lead and/or copper doped germanates and/or a germanate-silicates having formula (17)

a(M′O).b(M″2O).c(M″X)·dGeO2.e(M′″O).f(M″″2O3).g(M′″″oOp).h(M″″″xOy)  (17)

    • wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M′″ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, and/or any combination thereof; M″″ may be Sc, Y, B, Al, La, Ga, In, and/or any combination thereof; M′″″ may be Si, Ti, Zr, Mn, V, Nb, Ta, W, Mo, and/or any combination thereof; M″″″ may be Bi, Sn, Pr, Sm, Eu, Gd, Dy, and/or any combination thereof; X may be F, Cl, Br, J, and/or any combination thereof; 0<a≦2; 0≦b≦2; 0≦c≦10; 0<d≦10; 0≦e≦14; 0≦f≦14; 0≦g≦10; 0≦h≦2; 1≦o≦2; 1≦p≦5; 1≦x≦2; and 1≦y≦5.


Example of Preparation:


Preparation of the Luminescent Material Having Formula (18)

Pb0.004Ca1.99Zn0.006Ge0.8Si0.2O4:Mn  (18)


Starting materials: PbO, CaCO3, ZnO, GeO2, SiO2, MnCO3, and/or any combination thereof.


The starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. In a first step the mixture may be fired in an alumina crucible at about 1,200° C. in an oxygen-containing atmosphere for about 2 hours. Then, the material may be milled again. In a second step the mixture may be fired in an alumina crucible at about 1,200° C. in oxygen containing atmosphere for about 2 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 655 nm.

TABLE 16lead doped Mn-activated germanate compared with Mn-activatedgermanate without lead at about 400 nm excitation wavelengthCopper doped compoundComparison without copperPb0.004Ca1.99Zn0.006Ge0.8Si0.2O4:MnCa1.99Zn0.01Ge0.8Si0.2O4:MnLuminous density (%)101.5100Wavelength (nm)655657


Preparation of the Luminescent Material Having Formula (19)

Cu0.46Sr0.54Ge0.6Si0.4O3:Mn  (19)


Starting materials: CuO, SrCO3, GeO2, SiO2, MnCO3, and/or any combination thereof.


The starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. In a first step the mixture may be fired in an alumina crucible at about 1,100° C. in an oxygen-containing atmosphere for about 2 hours. Then, the material may be milled again. In a second step the mixture may be fired in an alumina crucible at about 1,180° C. in an oxygen-containing atmosphere for about 4 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 658 mm.

TABLE 17copper doped Mn-activated germanate-silicate comparedwith Mn-activated germanate-silicate without copper at400 nm excitation wavelengthCompoundCopper doped compoundwithout copperCu0.46Sr0.54Ge0.6Si0.4O3:MnSrGe0.6Si0.4O3:MnLuminous density (%)103100Wavelength (nm)658655









TABLE 18










optical properties of some copper and/or lead doped germanate-silicates


excitable by long wave ultraviolet and/or by visible light and their


luminous density in % at about 400 nm excitation wavelength













Luminous density at
Peak wave
Peak wave



Possible
400 nm excitation
length of
length of



excitation
compared with
lead/copper
materials without



range
copper/lead not doped
doped
lead/copper


Composition
(nm)
compounds (%)
materials (nm)
(nm)














Pb0.004Ca1.99Zn0.006Ge0.8Si0.2O4:Mn
360-400
101.5
655
657


Pb0.002Sr0.954Ca1.044Ge0.93Si0.07O4:Mn
360-400
101.5
660
661


Cu0.46Sr0.54Ge0.6Si0.4O3:Mn
360-400
103
658
655


Cu0.002Sr0.998Ba0.99Ca0.01Si0.98Ge0.02O4:Eu
360-470
102
538
533


Cu1.45Mg26.55Ge9.4Si0.6O48:Mn
360-400
102
660
657


Cu1.2Mg26.8Ge8.9Si1.1O48:Mn
360-400
103.8
670
656


Cu4Mg20Zn4Ge5Si2.5O38F10:Mn
360-400
101.5
658
655


Pb0.001Ba0.849Zn0.05Sr1.1Ge0.04Si0.96O4:Eu
360-470
101.8
550
545


Cu0.05Mg4.95GeO6F2:Mn
360-400
100.5
655
653


Cu0.05Mg3.95GeO5.5F:Mn
360-400
100.8
657
653









Lead and/or copper doped phosphates having formula (20)

a(M′O).b(M″2O).c(M″X).dP2O5.e(M′″O).f(M″″2O3).g(M′″″O2).h(M″″″xOy)  (20)

    • wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M′″ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M″″ may be Sc, Y, B, Al, La, Ga, In, and/or any combination thereof; M′″″ may be Si, Ge, Ti, Zr, Hf. V, Nb, Ta, W, Mo, and/or any combination thereof; M″″″ may be Bi, Sn, Pr, Sm, Eu, Gd, Dy, Ce, Tb, and/or any combination thereof; X may be F, Cl, Br, J, and/or any combination thereof; 0<a≦2; 0≦b≦12; 0≦c≦16; 0<d≦3; 0≦e≦5; 0≦f≦3; 0≦g≦2; 0<h≦2; 1≦x≦2; and 1≦y≦5.


Examples of Preparation:


Preparation of the Luminescent Material Having Formula (21)

Cu0.2Ca4.98(PO4)3Cl:Eu  (21)


Starting materials: CuO, CaCO3, Ca3(PO4)2, CaCl2, Eu2O3, and/or any combination thereof.


The starting materials in the form of oxides, phosphates, and/or carbonates and chlorides may be mixed in stoichiometric proportions together with small amounts of flux. The mixture may be fired in an alumina crucible at about 1,240° C. in reducing atmosphere for about 2 hours. After that the material may be milled, washed, dried and sieved. The luminescent material may have an emission maximum at about 450 nm.

TABLE 19copper doped Eu2+-activated chlorophosphate comparedwith Eu2+-activated chlorophosphate without copperat about 400 nm excitation wavelengthCopper doped compoundCompound without copperCu0.02Ca4.98(PO4)3Cl:EuCa5(PO4)3Cl:EuLuminous101.5100density (%)Wavelength (nm)450447









TABLE 20










copper and/or lead doped phosphates excitable by long wave


ultraviolet and/or by visible light and their luminous density


in % at about 400 nm excitation wavelength













Luminous density at 400 nm
Peak wave length
Peak wave length



Possible
excitation compared
of lead/copper
of materials



excitation
with copper/lead not
doped materials
without


Composition
range (nm)
doped compounds (%)
(nm)
lead/copper (nm)














Cu0.02Sr4.98(PO4)3Cl:Eu
360-410
101.5
450
447


Cu0.2Mg0.8BaP2O7:Eu, Mn
360-400
102
638
635


Pb0.5Sr1.5P1.84B0.16O6.84:Eu
360-400
102
425
420


Cu0.5Mg0.5Ba2(P,Si)2O8:Eu
360-400
101
573
570


Cu0.5Sr9.5(P,B)6O24Cl2:Eu
360-410
102
460
456


Cu0.5Ba3Sr6.5P6O24(F,Cl)2:Eu
360-410
102
443
442


Cu0.05(Ca,Sr,Ba)4.95P3O12Cl:Eu, Mn
360-410
101.5
438, 641
435, 640


Pb0.1Ba2.9P2O8:Eu
360-400
103
421
419









Meanwhile, the phosphor of the light emitting device consistent with this invention can comprise aluminate, silicate, antimonate, germanate, phosphate type chemical compound, and any combination thereof.



FIG. 6 is a one of the embodiment's emission spectrum according to the invention, which the phosphor is used for the light emitting device. The embodiment may have a light emitting diode with 405 nm wavelength and the phosphor, which is mixture of the selected multiple chemical compounds in proper ratio. The phosphor may be composed of Cu0.05BaMg1.95Al16O27:Eu which may have peak wavelength at about 451 nm, Cu0.03Sr1.5Ca0.47SiO4:Eu which may have peak wavelength at 586 nm, Pb0.006Ca0.6Sr0.394Sb2O6:Mn4+ which may have peak wavelength at about 637 nm, Pb0.15Ba1.84Zn0.01Si0.99Zr0.01O4:Eu which may have peak wavelength at around 512 nm, and Cu0.2Sr3.8Al14O25:Eu which may have peak wavelength at about 494 nm.


In such an embodiment, part of the initial about 405 nm wavelength emission light from the light emitting diode is absorbed by the phosphor, and it is converted to longer 2nd wavelength. The 1st and 2nd light is mixed together and the desire emission is produced. As the shown FIG. 6, the light emitting device convert the 1st UV light of 405 nm wavelength to wide spectral range of visible light, that is, white light, and at this time the color temperature is about 3,000K and CRI is about 90 to about 95.



FIG. 7 is another embodiment's emission spectrum according to the invention, which the phosphor is applied for the light emitting device. The embodiment may have a light emitting diode with about 455 nm wavelength and the phosphor, which is mixture of the selected multiple chemical compounds in proper ratio.


The phosphor is composed of Cu0.05Sr1.7Ca0.25SiO4:Eu which may have peak wavelength at about 592 nm, Pb0.1Ba0.95Sr0.95Si0.998Ge0.002O4:Eu which may have peak wavelength at about 527 nm, and Cu0.05Li0.002Sr1.5Ba0.448SiO4:Gd, Eu which may have peak wavelength at about 557 nm.


In such an embodiment, part of the initial about 455 nm wavelength emission light from the light emitting diode is absorbed by the phosphor, and it is converted to longer 2nd wavelength. The 1st and 2nd light is mixed together and the desire emission is produced. As the shown FIG. 7, the light emitting device convert the 1st blue light of about 455 nm wavelength to wide spectral range of visible light, that is, white light, and at this time the color temperature is about 4,000K to about 6,500K and CRI is about 86 to about 93.


The phosphor of the light emitting device according to the invention can be applied by single chemical compound or mixture of plurality of single chemical compound besides the embodiments in relation to FIG. 6 and FIG. 7, which are explained above.


According to the description above, light emitting device with wide range of color temperature about 2,000K or about 8,000K or about 10,000K and superior color rendering index more than about 90 can be realized by using the lead and/or copper doped chemical compounds containing rare earth elements.


In such a wavelength conversion light emitting device is capable of applying on mobile phone, note book and electronic devices such as home appliance, stereo, telecommunication products, but also for custom display's key pad and back light application. Moreover, it can be applied for automobile, medical instrument and illumination products.


According to the invention, it is also able to provide a wavelength conversion light emitting device with stability against water, humidity, vapor as well as other polar solvents.


In the foregoing described embodiments, various features are grouped together in a single embodiment for purposes of streamlining the disclosure. This method of disclosure is not to be interpreted as reflecting an intention that the claimed invention requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the following claims are hereby incorporated into this Detailed Description of Embodiments, with each claim standing on its own as a separate preferred embodiment of the invention.

Claims
  • 1. A light emitting device, comprising: a substrate; a plurality of electrodes provided on the substrate; a light emitting diode configured to emit light, the light emitting diode being provided on one of the plurality of electrodes; phosphors configured to change a wavelength of the light, the phosphors substantially covering at least a portion of the light emitting diode; and an electrically conductive device configured to connect the light emitting diode with another of the plurality of electrodes, wherein said phosphors include a lead and/or copper doped oxygen dominated phosphors.
  • 2. A light emitting device, comprising: a plurality of leads; a diode holder provided at the end of one of the plurality of leads; a light emitting diode provided in the diode holder, the light emitting diode including a plurality of electrodes; phosphors configured to change a wavelength of the light, the phosphors substantially covering at least a portion of the light emitting diode; and an electrically conductive device configured to connect the light emitting diode with another of the plurality of leads, wherein said phosphors include a lead and/or copper doped oxygen dominated phosphors.
  • 3. A light emitting device, comprising: a housing; a heat sink at least partially provided in the housing; a plurality of lead frames provided on the heat sink; a light emitting diode mounted on one of the plurality of lead frames; phosphors configured to change a wavelength of the light, the phosphors substantially covering at least a portion of the light emitting diode; and an electrically conductive device configured to connect the light emitting diode with another of the plurality of lead frames, wherein said phosphors include a lead and/or copper doped oxygen dominated phosphors.
  • 4. The light emitting device according to claim 1 or 2, further comprising electrically conductive paste provided between the light emitting diode and the one of the plurality of electrodes.
  • 5. The light emitting device according to claim 3, further comprising electrically conductive paste provided between light emitting diode and the heat sink.
  • 6. The light emitting device according to claim 1, 2, or 3, wherein the phosphors include one or more single compounds or any combination thereof.
  • 7. The light emitting device according to claim 1, further comprising a reflector configured to reflect the light from the light emitting diode.
  • 8. The light emitting device according to claim 1, 2, or 3, further comprising a sealing material configured to cover the light emitting diode and the phosphors.
  • 9. The light emitting device according to claim 8, wherein the phosphors are distributed in the sealing material.
  • 10. The light emitting device according to claim 1, 2 or 3, wherein the phosphors are mixed with a hardening material.
  • 11. The light emitting device according to claim 3, wherein at least one of the plurality of lead frames protrudes from the housing.
  • 12. The light emitting device according to claim 3, wherein the heat sink comprises a plurality of heat sinks.
  • 13. The light emitting device according to clam 1, 2, or 3, wherein the light emitting diode comprises a plurality of light emitting diodes.
  • 14. The light emitting device according to claim 1, 2, or 3, wherein the phosphor include aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate-silicates, lead and/or copper doped phosphates, or any combination thereof.
  • 15. The light emitting device according to claim 1, 2, or 3, wherein the phosphors include a compound having formula (1)
  • 16. The light emitting device according to claim 1, 2, or 3, wherein the phosphors include a compound having formula (2)
  • 17. The light emitting device according to claim 1, 2, or 3, wherein the phosphors include a compound having formula (5)
  • 18. The light emitting device according to claim 1, 2, or 3, wherein the phosphors include a compound having formula (9)
  • 19. The light emitting device according to claim 1, 2, or 3, wherein the phosphors include a compound having formula (14)
  • 20. The light emitting device according to claim 1, 2, or 3, wherein the phosphors include a compound having formula (17)
  • 21. The light emitting device according to claim 1, 2, or 3, wherein the phosphors include a compound having formula (20)
Priority Claims (1)
Number Date Country Kind
10-2004-0042396 Jun 2004 KR national