Patent Application
20060192222
This application claims the priority benefit of Taiwan application serial no. 931 3791 7, filed on Dec. 08, 2004. All disclosure of the Taiwan application is incorporated herein by reference.
1. Field of the Invention
The present invention relates to a light emitting device, and particularly to a light emitting device having an enhanced heat dissipation ability and being economic in power consumption.
2. Description of Related Art
Having the advantages of high illuminance, rapid response, small bulk, less contamination, high reliability and mass-production, light emitting diodes (LEDs) are becoming more and more widely used in illumination field and consumer electronic product development. LEDs are now used in large bulletin boards, traffic signal lights, cell phones, scanners, light sources for facsimile machines and illumination devices. Therefore, researches and developments of LEDs having high light emitting efficiency and high luminance are highly demanded.
Referring to
After a long time operation, or operating under poor heat dissipation condition, the temperature of the conventional light emitting chip 120 will increased. Therefore, an internal quantum efficiency of a light emitting layer 122 and the luminous efficiency of the light emitting chip 120 will decrease accordingly. However, in order to sustain the luminance of the light emitting chip 120, the input power has to be increased accordingly which will adversely generate more heat needed to dissipate. Consequently, the temperature of the light emitting chip 120 will rise even higher resulting in a decrease of the luminance, emitting efficiency and lifetime.
Therefore, an object of the present invention is to provide a light emitting device having enhanced heat dissipation ability.
Another object of the present invention is to provide a light emitting device adapted for power recycling and thus reducing power consumption.
According to the above and other objects, the present invention proposes a light emitting device. The light emitting device includes a substrate, at least one light emitting chip and a first heat dissipation element. The substrate has a top surface, on which a plurality of contacts are disposed, and a bottom surface. The light emitting chip, being in contact with the contacts, is disposed on the top surface of the substrate. The light emitting chip includes a light emitting layer, a positive electrode and a negative electrode. The light emitting layer can be excited to emit a light by a current applied between the positive electrode and the negative electrode. The first heat dissipation element is disposed at the bottom surface of the substrate.
According to an embodiment of the light emitting device, the substrate, for example, can be a printed circuit board or a silicon-based substrate. The substrate, for example, is composed of a plurality of circuit layers and at least one dielectric layer which are alternately stacked to each other. The foregoing contacts are at the topmost circuit layer.
According to an embodiment of the light emitting device, the light emitting chip, for example, is a red light LED chip, a green light LED chip or a blue light LED chip. In an embodiment, the light emitting chip, for example, can be an LED chip composed of a red light LED chip, a green light LED chip and a blue light LED chip.
According to an embodiment of the light emitting device, the first heat dissipation element, for example, includes a metal panel. The metal panel, for example, has a first surface and a second surface. The first surface of the metal panel is in contact with the bottom surface of the substrate. In an embodiment, the first heat dissipation element, for example, further includes a plurality of fins disposed at the second surface of the metal panel. The metal panel, for example, is made of silver, copper or aluminum. The foregoing fins, for example, are made of silver, copper or aluminum.
According to an embodiment of the present invention, the light emitting device, for example, includes a second heat dissipation element disposed between the bottom surface of the substrate and the first heat dissipation element. The second heat dissipation element, for example, is composed of micro heat pipes or micro channels. In an embodiment, the second heat dissipation element, for example, can also be disposed in the substrate of the light emitting device. The second heat dissipation, for example, is composed of micro-heat-pipes or micro channels. The second heat dissipation is in contact with the first heat dissipation.
According to an embodiment of the invention, the light emitting device, for example, further includes a plurality of conducting wires and an encapsulation. The positive electrode and the negative electrode of the light emitting chip are connected to the contacts of the substrate via the conducting wires. In an embodiment, the light emitting chip, for example, further includes a plurality of bumps, by which the positive electrode and the negative electrode of the light emitting chip are connected to the contacts of the substrate.
The present invention further provides a light emitting device which includes a substrate, at least one light emitting chip, a thermoelectric converter and a first heat dissipating element. The substrate has a top surface, on which a plurality of contacts are disposed, and a bottom surface. The light emitting chip is disposed on the top surface of the substrate, being in contact with the contacts. The light emitting chip includes a light emitting layer, a positive electrode and a negative electrode. The light emitting layer can be excited to emit a light by a current applied between the positive electrode and the negative electrode. The thermoelectric converter is disposed at the bottom surface of the substrate, and is adapted for absorbing heat generated by the light emitting chip and transferring the heat into electric power. The electric power is then outputted to the light emitting chip via the substrate electrode. The first heat dissipating element is disposed at a bottom surface of the thermoelectric converter.
According to an embodiment of the light emitting device, the substrate, for example, can be a printed circuit board or a silicon-based substrate. The substrate, for example, is composed of a plurality of circuit layers and at least one dielectric layer which are alternately stacked to each other. The foregoing contacts are at the topmost circuit layer.
According to an embodiment of the light emitting device, the light emitting chip, for example, is a red light LED chip, a green light LED chip or a blue light LED chip. In an embodiment, the light emitting chip is, for example, is an LED chip composed of a red light LED chip, a green light LED chip and a blue light LED chip.
According to an embodiment of the light emitting device, the first heat dissipation element, for example, includes a metal panel. The metal panel, for example, has a first surface and a second surface. The first surface of the metal panel is in contact with the bottom surface of the thermoelectric converter. In an embodiment, the first heat dissipation element, for example, further includes a plurality of fins disposed at the second surface of the metal panel. The metal panel, for example, is made of silver, copper or aluminum. The foregoing fins, for example, are made of silver, copper or aluminum.
According to an embodiment of the present invention, the light emitting device, for example, includes a second heat dissipation element disposed between the bottom surface of the thermoelectric converter and the first heat dissipation element. The second heat dissipation, for example, is composed of micro-heat-pipes or micro channels.
According to an embodiment of the invention, the light emitting device, for example further includes a plurality of conducting wires and an encapsulation. The positive electrode and the negative electrode of the light emitting chip are connected to the contacts of the substrate via the conducting wires. In an embodiment, the light emitting chip, for example, further includes a plurality of bumps, by which the positive electrode and the negative electrode of the light emitting chip are connected to the contacts of the substrate.
According to an embodiment of the invention, the thermoelectric converter, for example, is made of bismuth telluride, lead telluride or silicon germanium alloy.
In summary, the light emitting device according to the present invention employs a first heat dissipation element for evacuating the heat generated by the light emitting chip out of the light emitting device to sustain the light emitting chip at a lower operation temperature and to improve a light emitting efficiency of the light emitting layer. The light emitting device can further include a thermoelectric converter disposed at the bottom surface of the substrate. The thermoelectric converter is adapted for absorbing heat from the light emitting chip and converting the heat into electric power. The electric power is then outputted to the light emitting chip via the contacts of the substrate. Hence, the light emitting device can recycle the power consumed and eliminate the loss of the power evacuated.
The features of the invention which are believed to be novel are set forth with particularity in the appended claims. The invention, together with its objects and the advantages thereof, may be best understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements in the figures and in which:
a is a schematic view of a light emitting device of a wire bonding type according to a first embodiment of the invention.
b is a schematic view of another light emitting device of a wire bonding type according to the first embodiment of the invention.
a is a schematic view of a light emitting device (of a wire bonding type) having a thermoelectric converter according to the invention.
b is a schematic view of another light emitting device (of a wire bonding type) having a thermoelectric converter according to the invention.
Referring to
The foregoing light emitting chip 220, being in contact with the contacts 216, is disposed on the top surface 212 of the substrate 210. The light emitting chip 220 includes a light emitting layer 222, a positive electrode 224 and a negative electrode 226. The light emitting layer 222 can be excited to emit a light by a current applied between the positive electrode 224 and the negative electrode 226. In the embodiment, the light emitting chip 220, for example, is a red light LED chip, a green light LED chip or a blue light LED chip. The light emitting chip also may be an LED chip composed of a red light LED chip, a green light LED chip and a blue light LED chip or any two of such.
The light emitting device 200a, for example, further includes a plurality of conducting wires 250 and an encapsulation 260. The positive electrode 224 and the negative electrode 226 of the light emitting chip 220 are connected to the contacts 216 of the substrate 210 via the conducting wires 250. The conducting wires 250 are made of silver, copper or other electrically conductive materials. Furthermore, the encapsulation 260 is disposed on the substrate 210 for covering the light emitting chip 220 and the conducting wires 250.
It is to be noted that, in order to lower the operation temperature of the light emitting chip 220, the light emitting device 200a further includes a heat dissipation element 230. The heat dissipation element 230 is disposed at the bottom surface 214 of the substrate 210. The heat dissipation element 230, for example, includes a metal panel 232. The metal panel 232, for example, has a first surface 232a and a second surface 232b. The first surface 232a of the metal panel 232 is in contact with the bottom surface 214 of the substrate 210. In the embodiment, the first heat dissipation element 230, for example, further includes a plurality of fins 234 disposed at the second surface 232b of the metal panel 232. To obtain better heat dissipating effect, the metal panel 232, for example, is made of silver, copper or aluminum. The foregoing fins 234 on the second surface 232b of the metal panel 232, for example, are also made of silver, copper or aluminum.
Referring to
In operation, the heat generated by the light emitting chip 220 of the light emitting device 200b is first conducted to the substrate 210 under the light emitting chip 220. The substrate 210 transfers the absorbed heat in sequence to the second heat dissipation element 240 and the first heat dissipation element 230 for evacuating the heat generated by the light emitting chip 220 out of the light emitting device 200b, and thus lowering the operating temperature of the light emitting chip 220. Therefore, the light emitting efficiency of the light emitting layer 222 can be improved. It is to be noted that the first heat dissipation element 230 and the second heat dissipation element 240 are not limited to be applied in a light emitting chip 220 of a wire bonding type; they can also be applied in light emitting chips of a wafer bonding type of the second embodiment or a flip chip bonding type of the third embodiment.
Referring to
A light emitting device 200c includes a substrate 210, at least a light emitting chip 220, a first heat dissipation element 230, a second heat dissipation element 240, at least a conducting wire 250 and an encapsulation 260. The substrate 210 has a top surface 212, on which at least a contact 216 is disposed, and a bottom surface 214. In this embodiment, the substrate 210, for example, can be a silicon substrate. The light emitting chip 220, being in contact with the contact 216, is disposed on the top surface 212 of the substrate 210. The light emitting chip 220 includes a light emitting layer 222 and an electrode 228. The light emitting layer 222 can be excited to emit a light by a current applied on the electrode 228. Moreover, the electrode 228 of the light emitting chip 220 is connected to the contact 216 of the substrate 210 via the conducting wires 250. The encapsulation 260 is disposed on the substrate 210 for covering the light emitting chip 220 and the conducting wires 250.
In operation, the heat dissipation structure (the heat dissipation elements 230 and 240) according to the invention evacuates the heat generated by the light emitting chip 220 of the light emitting device 200c, and thus lowering the operating temperature of the light emitting chip 220. Therefore, the light emitting efficiency of the light emitting layer 222 can be improved.
Referring to
In operation, the heat generated by the light emitting chip 220 of the light emitting device 200b is first conducted to the substrate 210 under the light emitting chip 220 via the bumps 270. The substrate 210 transfers the absorbed heat in sequence to the second heat dissipation element 240 and the first heat dissipation element 230 for evacuating the heat generated by the light emitting chip 220 out of the light emitting device 200d, and thus lowering the operating temperature of the light emitting chip 220. Therefore, the light emitting efficiency of the light emitting layer 222 can be improved.
According to the above, light emitting chips will generate heat in operation. In order to recycle the heat generated by the light emitting chips, a light emitting device according to the present invention further employs an element adapted for converting thermal power into electric power. Referring to
It is to be noted that the third embodiment are similar with the first embodiment in structure and only the general difference therebetween will be described herein. The light emitting device 200e includes a substrate 210, at least one light emitting chip 220, a thermoelectric converter 280 and a first heat dissipating element 230. The thermoelectric converter 280 is disposed between the bottom surface 214 of the substrate 210 and the first heat dissipation element 230, and is adapted for absorbing heat generated by the light emitting chip 220 and transferring the heat into electric power. The electric power is then outputted to the light emitting chip 220 via an electrode of the substrate 210. In this embodiment, the thermoelectric converter, for example, is made of bismuth telluride, lead telluride or silicon germanium alloy. It is to be noted that the foregoing thermoelectric converter 280 should not be limited as being disposed between the bottom surface 214 of the substrate 210 and the first heat dissipation element 230; it can also be disposed in the substrate 210, wherein the thermoelectric converter 280 in the substrate 210 is in contact with the first heat dissipation element 230.
The heat generated by the light emitting chip 220 can be converted into electric power by the foregoing thermoelectric converter 280. However, it does not means that the operation temperature of the light emitting device 200e will decrease consequently. Therefore, the first dissipation element 230 can be disposed at a bottom surface 282 of the thermoelectric converter 280 for evacuating the heat generated by the light emitting chip 220 out of the light emitting device 200e.
Referring to
In operation, the heat generated by the light emitting chip 220 of the light emitting device 200f is first conducted to the substrate 210 under the light emitting chip 220. The substrate 210 transfers the absorbed heat to the thermoelectric element 280 under the substrate 210. The thermoelectric converter 280 converts the heat into electric power and outputs the electric power to the light emitting chip 220 via the electrode of the substrate 210.
On the other hand, the absorbed heat is evacuated in sequence by the second heat dissipation element 240 and the first heat dissipation element 230 out of the light emitting device 200f. In the embodiment, the light emitting device 200f can lower the operating temperature of the light emitting chip 220. Therefore, the light emitting efficiency of the light emitting layer 222 can be improved.
In summary, the light emitting device according to the present invention includes a first heat dissipation element and a second heat dissipation element for evacuating the heat generated by the light emitting chip out of the light emitting device. Therefore, the operating temperature of the light emitting chip can be lowered and the light emitting efficiency of the light emitting layer can be improved. Furthermore, the light emitting device may further include a thermoelectric converter disposed at the bottom surface of the substrate. The thermoelectric converter is adapted for converting the heat absorbed from the light emitting chip into electric power and outputting the electric power back to the light emitting chip. Hence, the light emitting device can recycle the power consumed and eliminate the loss of the power evacuated.
It should be noted that specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize that modifications and adaptations of the above-described preferred embodiments of the present invention may be made to meet particular requirements. This disclosure is intended to exemplify the invention without limiting its scope. All modifications that incorporate the invention disclosed in the preferred embodiment are to be construed as coming within the scope of the appended claims or the range of equivalents to which the claims are entitled.
| Number | Date | Country | Kind |
|---|---|---|---|
| 93137917 | Dec 2004 | TW | national |
