Claims
- 1. A method of growing polyphosphide crystals comprising the steps of:
- (A) heating a polyphosphide charge in a sealed vessel to a solventless melt having a temperature substantially within the range of 650.degree. to 670.degree. C.;
- (B) slowly cooling said melt to form polyphosphide crystals from said melt; and
- (C) bringing said melt into contact with a substrate to form said crystals on said substrate during said slow cooling step.
- 2. The method of growing polyphosphide crystals defined in claim 1 and the further step of:
- (D) removing said melt from said substrate at the termination of said slow cooling step.
- 3. The method defined in claim 2, and the further step of:
- (E) terminating said slow cooling step when the melt reaches a temperature substantially in the range of 630.degree. to 640.degree. C.
- 4. The method defined in claim 1 wherein said vessel is evacuated prior to said heating step.
- 5. The method defined in claim 1 wherein said slow cooling step is carried out at a rate substantially within the range of 6.degree. C. to 60.degree. C. per hour.
- 6. The method defined in claims 1, 2 or 3, wherein said substrate is a III-V semiconductor.
- 7. The method defined in claim 6, wherein said substrate is gallium phosphide.
- 8. The method defined in claim 6, wherein the substrate is gallium arsenide.
- 9. The method defined in claim 1, 2 or 3, wherein said melt comprises a metal dopant.
- 10. The method defined in claim 9, wherein said dopant is nickel.
- 11. The method defined in claim 1 wherein said polyphosphide is MP.sub.15, and M is an alkali metal.
- 12. A method of growing polyphosphide crystals comprising:
- (A) heating a polyphosphide charge of KP.sub.15 in a sealed vessel in a solventless melt having a temperature substantially within the range of 650.degree. C. to 670.degree. C.; and
- (B) slowly cooling said melt to form polyphosphide crystals of KP.sub.15 from said melt.
RELATED APPLICATIONS
This application is a continuation-in-part of U.S. patent applications of the below-identified co-pending U.S. patent applications Ser. Nos. 335,706 filed 12/30/81, now abandoned; 419,537, filed 9/17/82; 442,208 filed 11/16/82, now U.S. Pat. No. 4,508,931.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
3810794 |
Antypas et al. |
May 1974 |
|
Non-Patent Literature Citations (3)
Entry |
The Synthesis and Crystal Structure of the Polyphosphides La.sub.6 Ni.sub.6 P.sub.17, Ce.sub.6 Ni.sub.6 P.sub.17, and Pr.sub.6 Ni.sub.6 P.sub.17, Braun et al., Acta. Cryst., 1978, B 34, 2069-2074. |
The Crystal Structure of ZnSnP.sub.14 and Its Relationship to Hittorf Phosphorous and Other Polyphosphides, Pachali et al., Acta. Cryst., A31, Suppl. 3, 69 (1976). |
KP.sub.15, A New Polyphosphide, von Schnering et al., Angew. Chem. Internat. Edit./vol. 6 (1967)/No. 4. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
442208 |
Nov 1982 |
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