Claims
- 1. An interconnect structure for an integrated circuit, comprising:
- a P-type conductive structure;
- an N-type conductive structure;
- a polycrystalline silicon interconnect element connecting the P-type and N-type conductive structures, wherein the interconnect element is doped N-type in a first region in contact with the N-type conductive structure, and wherein the interconnect element is doped P-type in a second region in contact with the P-type conductive structure; and
- a conductive layer overlying the interconnect element and in contact with the first and second regions, wherein the conductive layer electrically shorts any P-N junction which exists between the first and second regions.
- 2. The structure of claim 1, wherein the P-type conductive structure resides in a semiconductor substrate.
- 3. The structure of claim 2, wherein the P-type conductive structure comprises a drain of a P-channel transistor.
- 4. The structure of claim 1, wherein the N-type conductive structure comprises a polycrystalline silicon conductive element.
- 5. The structure of claim 4, wherein the N-type conductive structure comprises a gate of a field effect transistor.
- 6. The structure of claim 1, wherein the P-type conductive structure comprises a drain of a P-channel load transistor in an SRAM cell, and the N-type conductive structure comprises a polycrystalline silicon gate for a field effect device.
- 7. The structure of claim 1, wherein the conductive layer comprises a refractory metal silicide.
Parent Case Info
This is a division of application Ser. No. 08/359,006, filed Dec. 19, 1994.
US Referenced Citations (14)
Divisions (1)
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Number |
Date |
Country |
Parent |
359006 |
Dec 1994 |
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