BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a graph showing TMA•SS measurements of hardened resins and hardened resin compositions in accordance with examples of the present invention;
FIG. 2 is a graph showing the glass transition temperatures of resin compositions in accordance with examples of the present invention;
FIG. 3 is a graph showing the pyridine ration and molecular weight distribution of the resin component in accordance with examples of the present invention;
FIG. 4 is a diagram showing an example of structure of a conventional high-frequency semiconductor device;
FIG. 5 is a diagram showing an example of structure of a high-frequency semiconductor device in accordance with examples of the present invention;
FIGS. 6(A) to 6(E) are diagrams showing an example of production of a multilayer wiring board in accordance with an example of the present invention;
FIGS. 7(A) to 7(G) are diagrams showing an example of production of a multilayer wiring board in accordance with another example of the present invention;
FIGS. 8(A) to 8(I) are diagrams showing yet an example of production of a multilayer wiring board in accordance with yet another example of the present invention;
FIGS. 9(A) to 9(F) are diagrams showing an example of production of a multilayer wiring board in accordance with an example of the present invention; and
FIG. 10 is a sectional view showing an antenna element-integrated high-frequency module in accordance with an example of the present invention.