The present disclosure generally relates to the technical field of transmission electron microscope accessories, and in particular, to a transmission electron microscope sample holder capable of applying magnetic field.
Transmission electron microscopy (TEM) is a very important analytical and characterization method in the field of material science. With an application of spherical aberration correction technology, the resolution of TEM has been increased from nanometer-scale to picometer-scale, which can be used to clearly observe the microstructure of a material at atomic level. Due to the requirements in scientific research, in-situ observation technology of electron microscope has been gradually developed in recent years. A characteristic of the in-situ observation technology of electron microscope is that the changes in microstructure and micro-property of a specimen can be in-situ observed under influence of applied physical fields such as temperature, electric field, magnetic field, stress, light, etc. in real time. The in-situ observation technology is helpful to find novel phenomena and understand microscopic mechanisms of a macroscopic property of a material in the field of physics and material science. In recent years, many high-tech companies making in-situ TEM sample holders have been set up in the world. In-situ TEM sample holders having various functions such as controlling the specimen temperature, applying and adjusting an electric field, a magnetic field and a stress to the specimen, and introducing a laser, have been developed. These in-situ technologies have been used in physics and material research, fruitful research results have been achieved and at the same time many application problems in materials have been solved, enabling a flourishing development in in-situ electron microscopy technology.
Electromagnetic properties are important for a material and a device. An in-situ experiment with a magnetic field can be used to characterize changes in electrical transport characteristics, the magnetic phase transition, the magnetic domain reversal and domain wall displacement of magnetic materials. These enrich people's understanding of the electromagnetic property and the relationship between microstructure and macro-property, providing experimental evidences and theoretical supports for development of various electromagnetic functional devices. At present, many commercial in-situ sample holders with functions of temperature, electric field, stress and light have been manufactured, however, in-situ magnetic holder are not well developed and the field strength that can be applied by holder are low. Some reported researches on in-situ magnetic field holders are shown herein.
Inoue et al. of JEOL developed a magnetic specimen stage (Journal of Electron Microscopy 54(2005) 509) in 2005, which used a magnetic circuit composed of soft magnetic material and an energizing coil surrounding the circuit to generate a magnetic field at a gap. The specimen mounted is standard in TEM with a diameter of 3 mm. The thickness of the iron core at the gap (a size of the iron core parallel to a direction of an electron beam) is about 2 mm, and the maximum strength of magnetic field that can be applied is 500 Oe. At the same time, two coils integrated on the column of TEM are necessary to compensate the deflection of electron beam in order to obtain clear images. Uhlig et al. of University of Regensburg in Germany designed a method of an in-situ magnetization experiment (Ultramicroscopy, 94 (2003) 193), where the magnetic field is generated by two electromagnets perpendicular to each other in a sample plane. The field strengths along two directions are controlled by a computer program, enabling the vector sum of the two fields along any direction in the sample plane. The holder can be used in Philips CM30 Twin/LTEM and a clear image can be obtained when the field strength is 63 Oe. M. Arita et al. of Hokkaido University in Japan designed a double-layer electromagnet system (Materials Transactions 55 (2014) 403), each layer of which is a kind of four-pole electromagnet with ring-shaped yoke. The magnetic core is made of permalloy to increase the magnetic field and reduce the stray field. The sample stage can generate a magnetic field in any direction in sample plane with a maximum value of 200 Oe. G. Yi et al. of the University of Glasgow in UK used two straight current-carrying wires to generate a parallel magnetic field to act on a sample (Ultramicroscopy 99 (2004) 65). Diameters of the two gold wires are 100 micrometers and the distance between them is 100 micrometers. When electric currents with the same value and direction are passed through the two gold wires, an in-plane magnetic field can be generated and applied to the sample. The magnetic field generated under the energized wires could automatically compensate the deflected electron beam, so that it would not affect imaging condition. The generated maximum field strength by a pulse current is about 300 Oe. Shindo of Tohoku University in Japan proposed a specimen holder to generate field with a permanent magnet needle (US patent US2005/0274889 A1), but the field distribution around TEM sample is not uniform. The maximum field strength of HummingBird's (U.S.) products can reach 900 Oe (www.hummingbirdscientific.com). Haihua Liu et al. of Institute of Physics of Chinese Academy of Sciences designed and manufactured an in-situ single-tilt sample holder (Journal of Chinese Electron Microscopy Society 30 (2011) 97). Xin'an Yang et al. added a “U”-shaped magnetic coil to the tip of the holder and improved the specimen cup (Journal of Chinese Electron Microscopy Society 32 (2013) 416), and further designed and manufactured a double-tilt holder. Test results show that the holder can generate a continuous field with strength of 100 Oe and an instantaneous field with strength of 140 Oe, and the “U”-shaped magnetic element can limit the beam shift and avoid the image distortion.
In summary, although many kinds of in-situ magnetic field sample holders have been developed by researchers worldwide, the reported maximum value of applied field does not exceed 0.1 T (1000 Oe) when the holder are used in a general TEM with 200 kV or 300 kV accelerating voltage. The reasons are analyzed herein.
The design of an in-situ magnetic TEM holder needs to consider two factors. One aspect is to generate a magnetic field as large as possible, which is relatively simply carried out. A large magnetic field can be generated by using a soft magnetic material core with a high saturation magnetic flux density, a large excitation current of a coil and a narrow gap width in the magnetic circuit. For reference, callout L2 in FIG. 1 of U.S. Pat. No. 8,158,940B2 is a gap width. To increase the field strength, decreasing the gap width or increasing the end areas of the two poles facing the gap or both two are mostly effective methods. Another aspect is to make the defection of electron beam as small as possible. The generated magnetic field would deflect the electron beam by Lorentz force at the same time of the field acting on the sample, if the electron beam is deflected too much, it would affect or even fail to image. Referring to
In the formula, e, c, U, m, t and B represent the electronic charge, the speed of light, the accelerating voltage of TEM, the electron mass, the range of the magnetic field and the field strength, respectively. It can be known that when the acceleration voltage is determined, the deflection angle of the electron beam is proportional to the product of the field strength and the application range of the magnetic field (denoted as Bt). If Bt is too great, the deflection angle would be too great and the electron beam would deviate from the optic axis and hence the phosphor screen to result in incorrect sample image.
Most current in-situ magnetic field sample stages are designed for observing a standard TEM sample with a diameter of 3 mm, that means the width of the gap between the magnetic poles is 3 mm, which is a very large distance for a magnetic field generator of the TEM holder. Therefore, in order to generate a magnetic field with a certain strength, areas of the magnetic poles at the gap need to be enlarged, and the thickness of the magnetic pole along the direction of the electron beam is increased correspondingly, that is, t in formula (1) is large, usually in the millimeter scale. In this way, the value of Bt is relatively large even when B is small (<0.1T). For example, according to the experimental results of JEOL holder in a 200 kV-TEM, when B is 0.015 T (t=2 mm) the deflection angle α is 19.1 mrads (1.09 degs), under this condition the sample can be barely enough imaged. If the magnetic field is further increased the electron beam would be deflected too seriously to form proper image. In order to solve this problem, many of the conventional arts design two or more deflection coils to compensate the ray path as field increases (such as callouts 9 and 10 in FIG. 1 of U.S. Pat. No. 8,158,940B2, and callouts 070 and 090 in FIG. 1 of US2004/0061066A1). Even the compensation deflection coils are used, the maximum field that can be applied in a conventional 200 kV-TEM or 300 kV-TEM does not exceed 0.1 T, which greatly limits the application of the in-situ magnetic field holder in research work of magnetic materials.
According to the analysis above, to increase the magnetic field B without generating large electron beam deflection, a feasible method is to reduce t so that the value of Bt remains unchanged or even becomes less. Akira Sugawara et al. reduced the thickness of the magnetic poles to 300 micrometers and the gap width to 180 micrometers (Table 1 in Ultramicroscopy 197 (2019) 105, and U.S. Pat. No. 9,070,532B2), so that the maximum value of the magnetic field was increased to 0.5 T when the ray path was compensated with deflection coils. Although this is a relatively great improvement, the 0.5 T field-strength was measured in a TEM with accelerating voltage of 1 MV. From formula (1), it can be known that when the accelerating voltage U becomes greater, the deflection angle will become less. Therefore, whether their holder at such a large field can be used in a general 200 kV- or 300 kV-TEM remains to be verified by experiments.
The present disclosure provides a magnetic field generation device which is capable of generating a magnetic field of more than 0.1 T and reaching a maximum value of 1.5 T.
The present disclosure provides the magnetic field generation device with the following structure. The magnetic field generation device is provided with a magnetic field generation end surface, a thickness of the magnetic field generation end surface is in a range of 100 nanometers to 280 micrometers, and the thickness of the magnetic field generation end surface is a size of the magnetic field generation end surface that is parallel to the direction of the electron beam in a transmission electron microscope.
In this way, compared with the related art, the magnetic field generation device in the present disclosure includes the following advantages.
Since the thickness of the magnetic field generation end surface of the magnetic field generation device of the present disclosure is in a range of 100 nanometers to 280 micrometers, the magnetic field generation device with this structure is capable of generating a stable and uniform magnetic field with the strength from 0 T to 1.5 T.
In some embodiments, the magnetic field generation device is provided with a gap, and both end surfaces of the magnetic field generation device at both sides of the gap are defined as the two magnetic field generation end surfaces. A width of the gap is in a range from 50 nanometers to 50 micrometers, and the width of the gap is a size of the gap that is perpendicular to the direction of the electron beam in the transmission electron microscope. In this way, the magnetic field generation device is more effective in generating magnetic fields.
In some embodiments, the thickness of the magnetic field generation end surface is 20 micrometers, and the width of the gap is 3 micrometers. In this way, the magnetic field generation device is more effective in generating magnetic fields.
In some embodiments, the magnetic field generation device includes a soft magnetic material core and a coil, the coil is wound on the soft magnetic material core, and the gap is located on the soft magnetic material core. In this way, the magnetic field generation device has a more stable structure.
In some embodiments, the soft magnetic material core is in a shape of “”, the gap is located at one side of the soft magnetic material core, and the coil is wound on the other sides of the soft magnetic material core. In this way, the structure of the magnetic field generation device is more rational.
In some embodiments, both upper and lower sides of the soft magnetic material core are provided with non-magnetic support sheets which are also in the shape of “”. The non-magnetic support sheets are provided with a slit at the position corresponding to the gap. A width of the slit is larger than the width of the gap. Two ends of the soft magnetic material core are exposed outside two ends of the non-magnetic support sheets, respectively. The coil is wound outside the non-magnetic support sheets on both upper and lower sides of the soft magnetic material core. In this way, the magnetic field generation device is easy to be machined and assembled.
In some embodiments, two end surfaces of two ends of the soft magnetic material core are able to protrude to form two protrusions, respectively. The gap is located between the two protrusions. In this way, the soft magnetic material core is easy to be machined.
In some embodiments, two soft magnetic material cores are symmetrically provided, the two soft magnetic material cores are both wound with coils, and the gap is defined between end surfaces of ends of the two soft magnetic material cores. In this way, the magnetic field generation device has a simple structure, and the magnetic fields generated are more stable.
In some embodiments, the magnetic field generation device includes two superconductor coils, and the gap is defined between ends of the two superconductor coils. In this way, the magnetic field generation device has a simple structure, and the magnetic fields generated are more stable.
In some embodiments, the magnetic field generation device includes a soft magnetic material core which is wound with a coil, and end surfaces of the soft magnetic material core are the magnetic field generation end surface. In this way, the magnetic field generation device has a simple structure and is easy to be assembled.
In some embodiments, the magnetic field generation device includes a superconductor coil, and side surfaces of the ends of the superconductor coil are the magnetic field generation end surfaces. In this way, the magnetic field generation device has a simple structure and is easy to be assembled.
The present disclosure further provides a transmission electron microscope sample holder capable of applying a magnetic field, which is capable of generating a magnetic field having a maximum value of 1.5 T, and the magnetic field can be applied to an electron microscope sample while allowing high quality imaging of the sample.
The present disclosure provides the transmission electron microscope sample holder capable of applying the magnetic field with the following structure. The transmission electron microscope sample holder includes a holder body and a holder head, the holder head is arranged at an end of the holder body, and the holder head is provided with the magnetic field generation device having the above structure.
In this way, compared with the related art, the transmission electron microscope sample holder capable of applying the magnetic field in the present disclosure has the following advantages.
Since the thickness of the magnetic field generation end surface of the transmission electron microscope sample holder capable of applying the magnetic field in the present disclosure is in a range of 100 nanometers to 280 micrometers, the magnetic field generation device with this structure is capable of generating a stable and uniform magnetic field with the strength in a range of 0 to 1.5 T and applying the magnetic field to the electron microscope sample while allowing high quality imaging of the sample.
In some embodiments, a groove is located at the holder head, the magnetic field generation device is press-fitted in the groove with a pressing plate, and the gap is communicated with the outside. In this way, the magnetic field generation device is easy to be assembled.
In some embodiments, the holder head includes a supporting frame and a connecting portion. An end of the supporting frame is connected with the connecting portion, and the groove is located at another end of the supporting frame. An opening is located at a side of the groove close to the connecting portion. In this way, the gap is exposed outside the opening, and it is easy for the sample to be delivered into the gap.
In some embodiments, a sample loading component is provided in the holder body, the sample loading component is capable of moving along three-dimensional directions. A needle is fixed on an end of the sample loading component, and a tip of the needle is capable of extending into the gap. In this way, the sample loading component can move along a length direction of the holder body to drive the sample on the tip of the sample loading component to enter or leave the gap, thus it is easy to load the sample and deliver the sample into the gap.
In some embodiments, the sample loading component includes a needle tube, a piezoelectric ceramic tube, and a needle, an end of the needle tube is connected with an end of the piezoelectric ceramic tube, another end of the piezoelectric ceramic tube is connected with an end of the needle, and another end of the needle is configured to fix an electron microscope sample. In this way, the piezoelectric ceramic tube can deform when energized, allowing the position of the sample on the needle to be adjusted in high spatial accuracy.
In some embodiments, another end of the holder body is provided with a handle, a three-dimensional fine-tuning sliding table is provided in the handle, and another end of the needle tube is connected with the three-dimensional fine-tuning sliding table, an outer wall of a middle part of the needle tube is provided with a sealing ring, and the sealing ring is capable of sliding inside an inner wall of the holder body. In this way, a wide range of adjustment of the position of the sample on the needle of the sample loading component can be carried out by the three-dimensional fine-tuning sliding table, facilitating rapid sample positioning.
In the figures, 1 represents a holder body, 2 represents a holder head, 201 represents a supporting frame, 202 represents a connecting portion, 203 represents a mounting portion, 204 represents a supporting foot, 205 represents a groove, 3 represents a handle, 301 represents an electrical interface, 4 represents a magnetic field generation device, 401 represents a soft magnetic material core, 402 represents a coil, 402′ represents a superconductor coil, 403 represents a gap, 404 represents a non-magnetic support sheet, 405 represents a slit, 406 represents a magnetic field generation end surface, 407 represents a protrusion, 5 represents a pressing plate, 6 represents a sample loading component, 601 represents a needle tube, 602 represents a needle, 603 represents a sealing ring, 604 represents a piezoelectric ceramic tube, 7 represents a three-dimensional fine-tuning sliding table.
Aspects of the present disclosure will be described more detailly with reference to the drawings of the present disclosure to understand the present disclosure better. Obviously, the detailed descriptions are merely descriptions of exemplary embodiments of the present disclosure and are not intended to limit the scope of the present disclosure in any way. Throughout the specification, the same accompanying symbols refer to the same elements.
In the figures, a thickness, a size and a shape of an object have been slightly exaggerated for ease of illustration. The figures are only examples and not strictly to scale.
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The holder head 2 can include a supporting frame 201 and a connecting portion 202. The supporting frame 201 can include a mounting portion 203 and two supporting feet 204. Ends of the two supporting feet 204 can be connected to two ends of the mounting portion 203, respectively. The connecting portion 202 can be in a shape of ring, and other ends of the two supporting feet 204 can be connected to the connecting portion 202. A groove 205 can be located at a side of the mounting portion 203.
The magnetic field generation device 4 can be mounted in the groove 205 of the mounting portion 203. A pressing plate 5 can be pressed to fix the magnetic field generation device 4 to the mounting portion 203 by means of screwing. A side of the magnetic field generation device 4 where the gap 403 is located can be exposed in the air.
The holder body 1 can be in a hollow tubular structure with openings at both ends. The connecting portion 202 of the holder head 2 can be fixed at an end of the holder body 1 by means of screwing. The handle 3 can be mounted on another end of the holder body 1. A sample loading component 6 can be provided in the holder body 1 and the sample loading component 6 can include a needle tube 601 and a thin needle 602. The needle tube 601 can be mounted in the holder body 1, an outer wall of a middle part of the needle tube 601 is provided with a sealing ring 603, and the sealing ring 603 is capable of sliding inside an inner wall along a length direction of the holder body 1. The needle tube 601 is also capable of moving transversely with sealing ring 603 as a pivot point. An end of the needle tube 601 near holder head 2 is connected to an end of a piezoelectric ceramic tube 604. Another end of the piezoelectric ceramic tube 604 can be connected to an end of the needle 602. Another end of the thin needle 602 is configured to fix an electron microscope sample. The handle 3 is provided with an electrical interface 301 which can be a vacuum electrical interface. The inner side of electrical interface 301 is connected to the piezoelectric ceramic tube 604 via conductive wires. The outer side of the electrical interface 301 is connected to an external controller, and the external controller is configured to activate the piezoelectric ceramic tube 604. A three-dimensional fine-tuning sliding table 7 is provided in the handle 3 and can move in three-dimensional directions. An end of the needle tube 601 away from the holder head 2 is connected to the three-dimensional fine-tuning sliding table 7. The three-dimensional fine-tuning sliding table 7 can drive the needle tube 601 and thus the needle 602 to move.
A working principle of the transmission electron microscope sample holder capable of applying a magnetic field in the present disclosure is shown herein. Firstly, the electron microscope sample is fixed on an end of the needle 602, then the three-dimensional fine-tuning sliding table 7 is adjusted to bring the sample as close as possible to the gap 403, then the piezoelectric ceramic tube 604 is energized to make the piezoelectric ceramic tube 604 deform, so as to drive the sample on the end of the needle 602 to a proper position in the gap 403, and then the magnetic field generation device 4 is activated to apply magnetic field to the sample.
The magnetic field generation device 4 can be used separately. A transmission electron microscope sample can be welded by FIB to the magnetic field generation end surfaces of the magnetic field generation device and observed directly.
Calculated values of the magnetic field of the magnetic field generation device of the first embodiment in the present disclosure and experimentally verified results are shown as follows.
In the first embodiment of the present disclosure, the magnetic field generation device has a reduced core thickness at the gap, i.e., the thickness of the magnetic field generation end surface, compared with the related arts, thus the gap needs to be narrower to generate a strong magnetic field. A magnetic field strength in the gap with a width of 3 micrometers cannot be measured directly by a Hall sensor, it is calculated by a finite element method using a software ANSYS as shown in
According to formula (1), when B is 1.5 T and t is 20 micrometers, the deflection angle α of the electron beam in a 200 kV-transmission electron microscope is equal to 19.1 mrads (1.09 degs). At a low magnification, as shown in
Number | Date | Country | Kind |
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202010460837.X | May 2020 | CN | national |
This application is a continuation of international application No. PCT/CN2021/088575 filed on Apr. 21, 2021, which claims all benefits accruing from China Patent Application No. 202010460837.X, filed on May 27, 2020, and titled “MAGNETIC FIELD GENERATION DEVICE, AND TRANSMISSION ELECTRON MICROSCOPE SAMPLE HOLDER CAPABLE OF APPLYING MAGNETIC FIELD”, in the China National Intellectual Property Administration, the content of which is hereby incorporated by reference.
Number | Date | Country | |
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Parent | PCT/CN2021/088575 | Apr 2021 | US |
Child | 17990756 | US |