Claims
- 1. A magnetic sensor utilizing a giant magnetoresistance (GMR) effect, comprising:an electrically conductive lower terminal layer; an insulation layer with a contact hole formed on the lower terminal layer; a GMR layer formed on the insulation layer in a region surrounding at least the contact hole and in contact with the lower terminal layer; and an electrically conductive upper terminal layer formed on the GMR layer.
- 2. A magnetic sensor according to claim 1, wherein said upper terminal layer and said lower terminal layer also provide a function as magnetic shield layers.
- 3. A magnetic sensor according to claim 1 or 2, wherein the GMR layer has a multilayer structure.
- 4. A magnetic sensor according to claim 3, wherein the GMR layer has a CoFe/Cu or Co/Cu multilayer structure.
- 5. A magnetic sensor according to claim 2, wherein said upper terminal layer and said lower terminal layer are comprised of an NiFe film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-193152 |
Jul 1998 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is based upon and claims priority of Japanese Patent Application No. Hei 10-193152, filed on Jul. 8, 1998, the contents being incorporated herein by reference, and a continuation of PCT/JP99/03161, filed Jun. 14, 1999.
US Referenced Citations (4)
Foreign Referenced Citations (7)
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5-151533 |
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JP |
4-123306 |
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JP |
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7-262520 |
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Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/JP99/03161 |
Jun 1999 |
US |
Child |
09/749310 |
|
US |