a
1 to 4f2 show a cross section and plane view for explaining the part of manufacturing process of a TMR effect reading head element;
a to 8c show various embodiments of joining of the hard bias layer and the additional york layer.
In
On the nonmagnetic intermediate layer 16, an insulation layer 17, a bucking coil layer 18, a bucking coil insulation layer 19, a main magnetic pole layer 20, an insulating gap layer 21, a writing coil layer 22, a writing coil insulation layer 23 and an inductive writing head element are provided. The inductive writing head element has an auxiliary magnetic pole layer 24, which configures a return york. On the inductive writing head element, a protection layer 25 is formed.
In this embodiment, the inductive writing head element for perpendicular magnetic recording is used, however it is very clear that an inductive writing head element for longitudinal magnetic recording can be used. Furthermore, it is possible to use several types of perpendicular magnetic recording structure other than shown in
The MR effect element according to the embodiment is a TMR effect reading head element or a GMR effect reading head element with CPP structure. As shown in
In case of the TMR effect reading head element, the MR effect multilayered structure 13 includes a magnetization free layer, a barrier layer and a magnetization fixed layer, although they are not shown in figures. The barrier layer is made of nonmagnetic insulator and laminated between the magnetization free layer and the magnetization fixed layer. The magnetization free layer mainly includes a free layer made of ferromagnetic material, and the magnetization fixed layer mainly includes a pinned layer made of ferromagnetic material and a pinning layer made of antiferromagnetic material.
In case of the GMR effect reading head element with CPP structure, the MR effect multilayered structure 13 includes a magnetization free layer, a space layer and a magnetization fixed layer, although they are not shown in figures. The space layer is made of nonmagnetic conductor and laminated between the magnetization free layer and the magnetization fixed layer. The magnetization free layer mainly includes a free layer made of ferromagnetic material, and the magnetization fixed layer mainly includes a pinned layer made of ferromagnetic material and a pinning layer made of antiferromagnetic material.
One end of the MR effect multilayered structure 13 is magnetically connected or couple with one end of a magnetic domain control layer 26a, and another end of the MR effect multilayered structure 13 is magnetically connected or couple with one end of a magnetic domain control layer 26b. Both magnetic domain control layer 26a and 26b are isolated from the lower shield layer 12 and the upper shield layer 15 by the shield insulation layer 14.
According to the embodiment, both magnetic domain control layer 26a and 26b are formed by a hard magnetic layer or a hard bias layer, which is extended to the track width direction, that is a direction parallel to longitudinal direction of the free layer.
Another end of a magnetic domain control layer 26a is magnetically coupled or connected with one end of an additional york layer 27, and another end of a magnetic domain control layer 26b is magnetically coupled or connected with another end of the additional york layer 27. Here the additional york layer 27 is independently formed. In this case, contact point of magnetic domain control layer 26a/26b to the additional york layer 27 is advantageously formed such that it bumps into the contact end of the additional york layer 27, because it leads the magnetic flux from the hard magnetic layer to the additional york layer 27 smoothly.
The additional york layer 27 connects the magnetic domain control layer 26a with the magnetic domain control layer 26b for leading magnetic flux from one magnetic domain control layer to another smoothly, and is formed in a plane, which is parallel to a lamination plane that both the magnetic domain control layer 26a and 26b are formed. Specifically, the additional york layer 27 is U-shaped, and has an arm section 27a, an arm section 27b and a parallel section 27c. The arm section 27a and 27b are extend away from ABS, which is a magnetic detection surface of the MR effect multilayered structure. The parallel section 27c is extended to a direction parallel to ABS. One end of the parallel section 27c is connected with the arm section 27a, and opposite end of the parallel section 27c is connected with the arm section 27b. As shown in
The soft magnetic material, which magnetic permeability is higher than the one of magnetic material for the lower shield layer 12 and the upper shield layer 15, is preferably used for the additional york layer 27. As an example, material for a magnetic pole such as FeNiCo is used for the additional york layer 27.
Manufacturing process of the thin film magnetic head, which has the MR effect element according to the embodiment, i.e. TMR effect reading head element, is explained below.
Firstly, an insulation under layer 41, which has a thickness of about 0.05 um to 10 um, is laminated on a substrate 40 using insulating material such as alumina (Al2O3) or oxidized silicon (SiO2) by sputtering method. The substrate 40 is made of electrically conductive material such as AlTic or Al2O3—TiC.
Next, a lower shield layer 42, which also acts as a lower electrode layer, is formed on the insulation under layer 41. The lower shield layer 42 is formed by laminating the magnetic metal material, for example FeAlSi, NiFe, CoFe, FeNiCo, FeN, FeZrN, FeTaN, CoZrNb or CoZrTa, by frame plating method, and has a thickness of about 0.1 um to 3 um. After laminating a shield insulating layer 43 on it, the surface is planarized by chemical mechanical polishing (CMP) method.
Then a foundation film and a foundation multilayer are formed on the lower shield layer 42 and the shield insulating layer 43 for example by sputtering method. For example, the foundation film is made of tantalum (Ta), hafnium (Hf), niobium (Nb), zirconium (Zr), Ti, molybdenum (Mo) or tungsten (W), and has a thickness of about 0.5 nm to 5 nm. The foundation multilayer is formed by foundation films, which are for example made of NiCr, NiFe, NiFeCr or Ru, and has a thickness of about 1 nm to 5 nm.
Then a magnetization fixed layer 44 is laminated on it. According to the embodiment, the magnetization fixed layer 44 is synthetic type, and formed by layering an antiferromagnetic film (pinning layer), a first ferromagnetic film, a nonmagnetic film and a second ferromagnetic film sequentially by sputtering method. For example, the antiferromagnetic film is formed using IrMN, PtMn, NiMn or RuRhMn, and has a thickness of about 5 nm to 15 nm. For example, the first ferromagnetic film is formed using CoFe, and has a thickness of about 1 nm to 5 nm. For example, the nonmagnetic film is made of alloy which includes ruthenium (Ru), rhodium (Rh), iridium (Ir), chromium (Cr), rhenium (Re) or copper (Cu), and has a thickness of about 0.8 nm. For example, the second ferromagnetic film has two-layered structure formed by sputtering method. A first layer of the second ferromagnetic film is a ferromagnetic film about 1 nm to 3 nm in thickness, and for example formed using CoFeB. A second layer of the second ferromagnetic film is a ferromagnetic film about 0.2 nm to 3 nm in thickness, and for example formed using CoFe.
Then a barrier layer 45, which has a thickness of about 0.3 nm to 1 nm, is laminated on the magnetization fixed layer 44 using aluminum (Al), titanium (Ti), Ta, Zr, Hf, magnesium (Mg), silicon (Si) or zinc (Zn) by sputtering method, and then oxidized.
Then a free layer 46 is formed on the oxidized barrier layer 45 by layering a high polarizability film and a soft magnetic film in series by sputtering method. For example, the high polarizability film has a thickness of about 1 nm, and is formed using CoFe. For example, the soft magnetic film has a thickness of about 2 nm to 6 nm, and is formed using NiFe.
Then a cap layer 47, which includes one or more layers, is formed by sputtering method. For example, the cap layer 47 has a thickness of about 1 nm to 20 nm in thickness, and made of Ta, Ru, Hf, Nb, Zr, Ti, Cr or W.
Next, a width, which is the same direction of the track width, of the TMR effect multilayered film is determined, and then a magnetic domain control layer is formed. Firstly, a resist, which has a resist pattern for liftoff, is formed. Then, patterning is performed by ion beam etching for TMR effect multilayered film using the resist as mask. For example Ar ion is used for ion beam etching. And then an insulating layer 48, which has a thickness of about 3 nm to 20 nm, is formed using insulating material such as Al2O3 or SiO2. Then, a foundation layer, a hard bias layer 49, and a bias cap layer 50 are formed in series by sputtering method. For example, the foundation layer is formed using Ta, Ru, Hf, Nb, Zr, Ti, Mo, Cr or W, and the hard bias layer 49 is formed using CoFe, NiFe, COPT or CoCrPT. Finally, the resist is removed in the liftoff process for forming the hard bias layer 49.
Next, heights of the TMR effect multilayered film for both track width direction and vertical direction are determined. Firstly, a resist, which has a resist pattern for liftoff, is formed. Then, patterning is performed by ion beam etching for TMR effect multilayered film using the resist as a mask. For example Ar ion is used for ion beam etching. And then an insulating layer 51 is formed using insulating material such as Al2O3 or SiO2 by sputtering method. Finally, the resist is removed in the liftoff process. With each process described above, the TMR effect multilayered structure 52 and the hard bias layer 49 are completed.
Each film used for a magnetic sensitive region, which includes the magnetization fixed layer, the barrier layer and the magnetization free layer, is not limited to the one described in this embodiment, and various material and thickness can be applied to each film. For example, instead of three-layered structure which has the first ferromagnetic film, the nonmagnetic film and the second ferromagnetic film, it is possible to use single layer structure, which has a ferromagnetic film, for the magnetization fixed layer. It is also possible to use other layered number for the magnetization fixed layer. Instead of two-layered structure, single layer structure without high polarizability film can be used for the magnetization free layer. It is also possible to use three or more layered structure, which includes a film for magnetostrictive control, for the magnetization free layer. Furthermore, the magnetization fixed layer, the barrier layer and the magnetization free layer can be layered in reverse order, that is the magnetization free layer is the first, the barrier layer is the second, and the magnetization fixed layer is the last. In this case, the antiferromagnetic film in the magnetization fixed layer is placed at the top.
Next, the additional york layer is formed. Firstly, a resist, which has a resist pattern for liftoff, is formed. Then, patterning is performed by ion beam etching for the hard bias layer 49 and the insulating layer 51 using the resist as a mask. For example Ar ion is used for ion beam etching. And then the soft magnetic material, which magnetic permeability is higher than the one of magnetic material for the lower shield layer 42 and the upper shield layer 55, for example FeNiCo, is layered about 100 nm in thickness by sputtering method. Finally, the resist is removed in the liftoff process. With the process described above, the additional york layer 53 is formed. And then an insulation layer 54 is formed using for example sputtering method or ion beam sputtering method.
As an example,
Finally, an upper shield layer 55, which has a thickness of about 0.5 um to 3 um, is formed on the insulation layer 54 and the TMR effect multilayered structure using for example frame plating method. Magnetic metal material or multilayered film made of magnetic metal material is used for the upper shield layer 55. Examples of magnetic metal material for the upper shield layer 55 is FeAlSi, NiFe, CoFe, FeNiCo, FeN, FeZrN, FeTaN, CoZrNb or CoZrTa.
The TMR effect reading head element is formed by the process described above.
As described above, according to the embodiment, the additional york layer 27 (53), which is independently formed, leads magnetic flux from one magnetic domain control layer to another magnetic domain control layer. In other words, the additional york layer 27 connects one end of the magnetic domain control layer 26a with one end of the magnetic domain control layer 26b magnetically and continuously. Therefore most magnetic flux from the magnetic domain control layer 26a and 26b enters into the additional york layer 27, and little of it enters into the lower shield layer 12 (42) and the upper shield layer 15 (55).
As shown in
a to 8c show various embodiments of joining of the hard bias layer and the additional york layer.
According to the embodiment, as shown in
b shows joining example that part of a leading end 86a′ of a hard bias layer 86′ is magnetically contacted with a lateral side 87b′ around a top end area of a additional york layer 87′, and a lateral side 86b′ around the top end area of the hard bias layer 86′ is magnetically contacted with a leading end 87a′ of the additional york layer 87′. With this configuration, magnetic flux from the remaining part of the leading end 86a′, which is not contacted with the additional york layer 87′, leaks outsides.
c shows another joining example that whole surface of a leading end 86a′ of the hard bias layer 86″ is magnetically contacted with a leading end 87a″ of the additional york layer 87″, but a top end area of the hard bias layer 86″ is bended at a right angle. With this configuration, magnetic flux leaks outside from a lateral side 86b″ of the hard bias layer 86′, and does not enter into the additional york layer 87″.
Therefore, configuration as shown in
A pair of magnetic domain control layers can be formed using an antiferromagnetic layer and a soft ferromagnetic layer, which is exchange-coupled with the antiferromagnetic layer, instead of the hard bias layer.
Furthermore, the additional york layer can be formed in such a way that it spreads outside a region that the upper shield layer and the lower shield layer exit. Also a shape of the additional york layer is not limited to U shaped. Any shape can be used on the condition that it connects a pair of magnetic domain control layers magnetically and continuously.
The invention can be applied to a GMR head, which has a GMR effect reading head element with CIP structure, instead of the TMR head or the GMR head with CPP structure. In this case, the additional york layer needs to be formed using soft magnetic material with electrically insulating characteristic.
Also it is clear that the MR effect element according to the invention can be used for a magnetic sensor instead of the thin film magnetic head.
Many modifications and variations will be apparent those of ordinary skilled in the art. The embodiments was chosen and described in order to best explain the principles of the invention. It should be understood that the present invention is not limited to the specific embodiments described in the specification, except as defined in the appended claims.
Number | Date | Country | Kind |
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143760/2006 | May 2006 | JP | national |