Claims
- 1. A method of making a semiconductor connection component comprising the steps of forming at least one lead extending over a gap extending through a vertical extent of a support structure, each said lead having upper and lower surfaces and including a first connection section having a longitudinal axis extending from the support structure on one side of the gap, a second connection section extending from the support structure on the other side of the gap, and a frangible intermediate section contiguously connecting said connection sections, said frangible intermediate section and at least a part of said first connection section aligned over said gap so that said first connection section of each lead can be detached from said second connection section by breaking the frangible section upon being displaced downwardly in said gap, and forming at least one vertical jog within said frangible intermediate section such that the upper and lower surfaces of the lead are offset from one another at each said vertical jog.
- 2. The method of claim 1, further comprising the step of providing a base material layer on said support structure, said base material layer having contiguous first and second planar sections of different thickness, and depositing continuous lead-forming material over said first and second planar sections forming said elongated leads.
- 3. The method of claim 2, wherein said first and second planar sections provide a vertical wall therebetween.
- 4. The method of claim 3, wherein the step of forming said jog comprises providing a layer of said lead-forming material over said wall having a thickness less than the thickness of said lead-forming material provided over at least one of said first and second planar sections.
- 5. The method of claim 2, wherein said step of forming said leads includes the step of subdividing a continuous layer of said lead-forming material into said leads.
- 6. The method of claim 1, further including the step of providing a base material layer on said support structure and forming a depression therein, and depositing continuous lead-forming material over said base material layer and into said depression, whereby said lead-forming material has a U-shape.
- 7. The method of claim 1, wherein said jog is formed by the lower surface of the second connection section being disposed above the lower surface of the first connection section and the upper surface of the second connection section being disposed above the upper surface of the first connection section.
Parent Case Info
This application claims the benefit of Provisional Application No. 60/079,650 filed on Mar. 27, 1998.
US Referenced Citations (19)
Foreign Referenced Citations (1)
Number |
Date |
Country |
9403036 |
Mar 1994 |
WO |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/079650 |
Mar 1998 |
US |