Patent Application
20190187052
This U.S. non-provisional patent application claims priority under 35 U.S.C. § 119 from Korean Patent Application No. 10-2017-0176301, filed on Dec. 20, 2017, the disclosures of which are incorporated herein in their entireties by reference.
Provided are a material for detecting photoresist and a method of fabricating a semiconductor device using the same.
With the increase of the integration degree of semiconductor devices, the wavelength of an exposure light source decreases, and a process is converted into a process using I-line (365 nm), KrF laser (248 nm), or ArF laser (193 nm), and in line with the conversion, the development of various materials is being conducted. Particularly, as the size of a semiconductor device decreases, and patterns which are distorted due to residues or contaminants produced during processes affect the performance, yield and reliability of the semiconductor device, requirements on verifying materials in advance are increasing.
Photoresist is a photosensitive polymer compound, and a photoresist pattern may be formed on a wafer by physical change due to the chemical change of components on exposure and by selective dissolution of an exposed part and an unexposed part during a developing process. In order to manufacture a reliable semiconductor device, inspection after exposure if a photoresist pattern is formed into a desired shape or if photoresist residue are left after removing the photoresist pattern, may be required.
Provided is a material for detecting photoresist.
In addition, provided is a method of fabricating a semiconductor device with improved reliability.
According to an aspect of an example embodiment to solve the above-described task, a material for detecting photoresist includes a macrocyclic molecule having a hollow structure and a fluorescent substance which is labeled on the macrocyclic molecule, wherein the macrocyclic molecule is at least one of cyclodexrin, cucurbituril, calixarene, pillararene and catenane.
According to an aspect of an example embodiment, a material for detecting photoresist includes a macrocyclic molecule having a hollow structure and a fluorescent substance which is labeled on the macrocyclic molecule, wherein a target molecule on a surface of the photoresist is inserted into the hollow structure, and thus the material for detecting photoresist bonds to the photoresist.
According to an aspect of an example embodiment, a method of fabricating a semiconductor device includes a forming step of forming a photoresist layer including a first part and a second part on a wafer, a removing step of removing the first part and leaving the second part of the photoresist layer, a bonding step of bonding a material for detecting photoresist to a surface of the second part, and an inspecting step of inspecting the second part.
The accompanying drawings are included to provide a further understanding of the above and/or other aspects, and are incorporated in and constitute a part of this specification. The drawings illustrate example embodiments and, together with the description, serve to explain principles of the example embodiments. In the drawings:
Hereinafter, preferred example embodiments will be explained in more detail with reference to the accompanying drawings to particularly explain the example embodiments.
Referring to
The macrocyclic molecule 5a may be, for example, at least one of cyclodextrin (CD), cucurbituril (CB), calixarene, pillararene and catenane.
The cyclodextrin (CD) may have a structure in Table 1.
In Table 1, the cyclodextrin (CD) may have a structure in which 6-8 glucose molecules, which are repeating units, are bonded (that is, n=6-8). The cyclodextrin including 6 glucose molecules may be named α-CD, the cyclodextrin including 7 glucose molecules may be named β-CD, and the cyclodextrin including 8 glucose molecules may be named γ-CD.
The cucurbituril (CB) may have a structure in Table 2.
In Table 2, the cucurbituril (CB) includes a repeating unit including glycoluril and may have a structure in which 5-12 repeating units are bonded (that is, n=5-12). For example, if n is 6, the compound may be named as cucurbit[6]uril. The cucurbituril (CB) may have a hollow three-dimensional structure.
The calixarene may have a structure in Table 3.
In Table 3, the calixarene may have a structure in which 4-8 phenyl groups, which are repeating units, are bonded (that is, n=4-8). For example, if n is 4, the compound may be named as calix[4]arene. The calixarene may have a hollow three-dimensional structure.
The pillararene may have a structure in Table 4.
In Table 4, the pillararene may include a hydroquinone group as a repeating unit and may have a structure in which 5-10 repeating units are bonded (that is, n=5-10). For example, if n is 5, the compound may be named as pilla[5]arene. The pillararene may have a hollow three-dimensional structure.
The catenane may have a molecular structure in which two or more macrocyclic molecules are mechanically combined. The catenane may have, for example, a structure in Table 5.
As described above, all macrocyclic molecules shown in Table 1 to Table 5 may have a hollow structure.
Some of terminals of the cyclodextrin (CD), the cucurbituril (CB), the calixarene, the pillararene, and the catenane may be substituted with other functional group or molecule.
The fluorescent substance 5b may be, for example, a cyanine (Cy)-based or rhodamine-based fluorescent substance. The cyanine-based fluorescent substance may be, for example, Cy2, Cy3, Cy3B, Cy3.5, Cy5, Cy5.5, or Cy7. The rhodamine-based fluorescent substance may be, for example, Rhodamine B, Rhodamine 6G, or Rhodamine 123.
Particular examples of the material 5 for detecting photoresist may be cyanine-labeled beta-cyclodextrin (cyanine-labeled β-CD) or rhodamine-labeled beta-cyclodextrin (rhodamine-labeled β-CD).
Referring to
Referring to
If the second part 3b is the photoresist, the second part 3b may be formed by an exposure process and a developing process. In this case, the subsequent inspection of the second part 3b may be conducted for inspecting whether a photoresist pattern is formed in a desired shape after the exposure and developing processes. The first part 3a or the second part 3b may be an exposed part by the exposure process. The first part 3a may be removed by the developing process. The photoresist layer 3 may be hydrophobic before performing the exposure process. By the exposure process, the exposed part may be changed into a hydrophilic part. If the first part 3a is an exposed part, this part may be changed into a hydrophilic part. In this case, for example, tetramethylammonium hydroxide (TMAH) may be used to remove the first part 3a. If the second part 3b is an exposed part, the second part 3b may be changed into a hydrophilic part, and the first part 3a may maintain the hydrophobic state. In this case, for example, N-butyl acetate (NCA) may be used to remove the first part 3a.
If the second part 3b is the photoresist residue, the first part 3a may be removed by a strip process (or a cleaning step). The strip process may be performed using tetramethylammonium hydroxide (TMAH). In this case, the subsequent inspection of the second part 3b may be performed for checking the performance of the photoresist.
Referring to
The binding affinity (Ka) between the target molecule G and the macrocyclic molecule 5a of the material 5 for detecting photoresist may be about 104-105 M−1. Particularly, if the target molecule G is an aromatic hydrocarbon, the binding affinity (Ka) may be about 105 M−1, and a stable composite is found to be formed.
When beta-cyclodextrin is used as the macrocyclic molecule 5a and target molecules 1-4 of Table 6 are used as the target molecule G, the binding affinity may be shown as in Table 7.
Referring to Table 7, it could be found that stable bonding was attained overall.
Referring to
As described above, by bonding a material for detecting photoresist including a fluorescent substance-labeled macrocyclic molecule to the surface of the photoresist and by measuring fluorescence, the residues of photoresist after cleaning process may be inspected. Even though the photoresist residue are minute and several nanometer sizes, detection may be possible. Accordingly, photoresist with excellent performance may be prepared. Alternatively, the photoresist pattern may be inspected after exposure and developing processes if a desired shape is formed well. If the photoresist pattern is formed into a desired shape, underlying insulating layer or conductive layer may be etched using the photoresist pattern as an etching mask. Thus, a semiconductor device having improved reliability may be manufactured.
The material for detecting photoresist according to example embodiments includes a macrocyclic molecule which is marked with a fluorescent substance, and into the hollow structure of the macrocyclic molecule, a target molecule on the surface of the photoresist may be inserted. Thus, the material for detecting photoresist may be bonded to the photoresist, and the photoresist may be detected by measuring fluorescence. Accordingly, the leaving of the residues of the photoresist after a cleaning process may be inspected. Accordingly, photoresist with excellent performance may be prepared. Alternatively, the shape of a photoresist pattern may be inspected after exposure and developing processes if well formed, and thus, a semiconductor device having improved reliability may be manufactured.
Although the example embodiments have been described, it is understood that the present invention should not be limited to these example embodiments but various changes and modifications can be made by one ordinary skilled in the art within the spirit and scope of the disclosure as hereinafter claimed.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2017-0176301 | Dec 2017 | KR | national |
