Memory incorporating column register and method of writing in said memory

Abstract

A column register of an integrated circuit memory, notably in EEPROM technology, is utilized in a method of writing a data word of 2p bits in the memory, where p is a non-zero whole number. The method includes the following steps:1) erasing all the cells of the word;2) loading 2q data in 2q high-voltage latches (HV1, HV3, HV5, HV7), and loading 2p-2q other data in the 2p-2q low-voltage latches (LV0, LV2, LV4, LV6); and3) programming 2q cells of the memory (M0, M2, M4, M6) as a function of the data memorized in the 2q high-voltage latches;as well as repeating 2p-q−1 times the following steps:4) loading, in the 2q high-voltage latches, of 2q other data that were loaded in the 2q low-voltage latches at step 2); and5) programming 2q other cells of the memory (M1, M3, M5, M7) as a function of the data memorized in the 2q high-voltage latches.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims priority from prior French Patent Application No. 99-12149, filed Sep. 29, 1999, the entire disclosure of which is herein incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to memory devices, and more particularly to a column register suitable for an integrated circuit memory for instance in EEPROM technology, of the serial or parallel type, and a method of writing in said memory.

2. Description of the Prior Art

Such a memory contains cells arranged in a matrix of rows and columns. A memory cell memorizes the value of one bit in the memory. The cells of a same column are connected to a same connection line, classically depicted vertically and called bit line. Also, cells of a same row are connected to a same connection line, classically depicted horizontally and called word line.

As shown in FIG. 1 , a cell M comprises a floating gate transistor TGF forming a non-volatile memorization element whose drain is connected to the bit line BL via a selection transistor TS, which is an N-type MOS transistor. In operation, the sources of the floating gate transistors of a same line are connected to ground, in general via another selection transistor (not shown) common to several adjacent cells. The gate of the floating gate transistor TGF is connected to a command gate line CG. That of the selection transistor TS is connected to the word line WL.

The erasure and programming of an EEPROM cell are obtained by the tunnel (“Fowler Nordheim”) effect. To this end, a high programming voltage VPP on the order of 18 volts is generated by any adapted means from the memory's supply voltage VCC, which is on the order of 5 volts.

An erased cell is a cell in which the floating gate of transistor TGF is negatively charged. In order to erase a cell, it is then necessary to supply it with voltages enabling to “trap” free electrons of the floating gate. Accordingly, it is necessary to apply the voltage VPP on line CG and on line WL, and to apply a zero voltage on line BL or to set that line to a high impedance state. The erased state of a cell corresponds for example to the memorization of a binary data 1.

A programmed cell is a cell in which the floating gate of transistor TGF is positively charged. To program a cell, it is therefore necessary to supply it with voltages capable of “snatching” electrons from the floating gate. Accordingly, it is necessary to apply the voltage VPP on line BL and on line WL, and to apply a zero voltage to line CG. The programmed state of a cell corresponds e.g. to the memorization of a binary data 0.

According to the above example, the writing of any binary value in a cell comprises a step of erasing the cell (so that it memorizes the binary data 1), then, when the binary data to be written is 0, a step of programming the cell. The initial erasure step at the programming step serves to control the charge of the floating gate under all circumstances. The programming step is conditional in the sense that it only takes place if the binary data to be written is 0.

In order to implement the programming step, the memory comprises, for each bit line, a high-voltage memorization and switching latch, or more simply a high-voltage latch. This latch forms part of a register known as a bit line register or a column register. Such a latch has a twofold function. Firstly it serves to memorize a binary data for the purpose of writing in a cell. Secondly, it serves to bring the bit line to which the cell is connected to voltage VPP, if the binary data to be written is 0. This second function of the latch is referred to as conditional switching.

FIG. 2 shows the diagram of a high voltage latch as known in the state of the art.

The latch BHT shown in FIG. 2 first of all comprises high voltage memorization means for provisionally memorizing a binary data 1 or 0, respectively in the form of a high voltage VPP or a zero voltage.

These means classically comprise two inverters I 1 and I 2 connected “head-to-tail” between a node A and a node B so as to produce a memorization effect. They are high voltage inverters in the sense that they can receive and deliver a voltage of either zero or VPP. They are classically CMOS technology inverters, i.e. they comprise a P-type MOS transistor and an N-type MOS transistor in series between the high voltage source VPP and ground, the gates of the two transistors being connected together and the output of the inverter being taken at the node corresponding to the common source of the two transistors. By convention, the output of the memorization means is taken at node B and their input is taken at node A. In other words, the binary data stored by the latch is 0 when node B is brought to the zero potential (ground potential) and is 1 when node B is brought to the high voltage VPP (potential referenced with respect to ground).

The high voltage latch BHT also comprises loading means, for loading a binary data in the high voltage memorization means.

These loading means firstly comprise an N-type transistor designated N 1 connected to node A by its drain and to a node R by its source. In operation, the node R is connected to ground via a selection transistor (not shown). The gate of transistor N 1 receives a signal DATA bar which is a low voltage signal (i.e. whose level is either zero or equal to VCC) representing the inverse of the binary data to be written. In other words, the level of signal DATA bar is zero if the binary data to be written is 1 and is equal to VCC if the binary data to be written is 0. When its level is equal to VCC, the signal DATA bar serves to bring node B to the VPP voltage, which loads the binary value 1 into the high voltage memorization means I 1 , I 2 .

Secondly, the loading means comprise another N-type MOS transistor, designated N 2 , having its drain connected to node B and its source to node S. In operation, the node R is connected to ground either directly or via another selection transistor (not shown). The gate of transistor N 2 is connected to a node T to receive a reset to zero signal RLAT, which is also a low voltage signal. When its level is at VCC, this signal serves to bring node B to ground potential, so loading the binary value 0 into the memorization means I 1 , I 2 .

The loading of a binary data in the memorization means I 1 , I 2 is carried out in two stages: at a first stage, the signal RLAT passes to VCC, so connecting node B to ground via the transistor N 2 which is conducting, so that a 0 is loaded into the memorization means I 1 , I 2 ; The signal RLAT then returns to zero to block transistor N 2 ; at a second stage, the inverse of the binary data to write is brought to the gate of transistor N 1 by means of the signal DATA bar, so that node A is brought to ground potential via transistor N 1 only when the binary data to be written is 0, which then has the effect of loading the binary value 1 into the memorization means I 1 , I 2 .

The high voltage latch BHT further comprises conditional switching means to bring or not bring to the voltage VPP the bit line BL to which the cell is connected depending on the value memorized by the high voltage memorization means.

These conditional switching means comprise an N-type MOS transistor designated SW connected by its gate to the output of the high voltage memorization means I 1 , I 2 (i.e. at node B), to the bit line BL by its source and by its drain to the high voltage supply source VPP via an N-type MOS transistor designated WRT. The gate of transistor WRT receives a control signal WRMD which makes it conducting during the memory write operations (i.e. in the write mode) and which blocks it during the memory readout operations (i.e. in the read mode). Transistor WRT thus has the function of isolating the bit line BL from the high voltage VPP in the read mode. In the write mode, transistor SW provides the function of conditionally switching the high voltage latch since it allows to bring the bit line BL to the high voltage VPP only when the binary value memorized in the memorization means I 1 , I 2 is 1, that is when the binary data to write is 0.

In general, at least eight binary data are written simultaneously into the memory. These eight binary data form a data word or a binary word. A memory word designates eight adjacent cells of a same line of the memory memorizing the binary word. A memory word therefore memorizes the value of one byte of the memory. In certain cases, several memory words of a same memory line are written simultaneously, sometimes all the words of that line: this is known as page mode writing. In what follows, the term “word” shall sometimes be used in isolation to designate either a binary word or a memory word, depending on the context.

Writing a binary word in the memory comprises a step of simultaneously erasing all the cells of the memory word (so that they memorize the binary data 1), then a step of conditional programming simultaneously for all the cells of the memory word (so that only the thus programmed cells store the binary value 0).

For writing a data word, eight binary bits are loaded into eight high voltage latches such as the one shown in FIG. 2 . Indeed, there is in general one such latch per bit line of the memory, to allow the simultaneous writing into all the cells of a same memory word, or even into all the cells of a same memory line (page mode).

Now, the high voltage latches such as shown in FIG. 2 occupy a lot of space on the doped silicon substrate on which the memory is formed, in particular owing to the size of the transistors that must allow them to withstand strong currents and high voltages. As a result, the column register occupies a considerable area of silicon. For low capacity memories (with few memorized bytes), this area is comparable—or even greater—than that occupied by the memory storage space. Thus, in FIG. 3 there is shown schematically the area occupied by the memory storage plane MM of one byte comprising eight memory cells M 0 to M 7 forming a memory word and the area occupied by the corresponding eight high-voltage latches BHT 0 to BHT 7 . It can be appreciated that this area occupied by the high-voltage latches is penalizing in terms of fabrication cost, especially for low capacity memories.

Accordingly, there exists a need for overcoming the disadvantages of the prior art as discussed above.

SUMMARY OF THE INVENTION

According to a preferred embodiment of the present invention, a preferred implementation will remedy the drawbacks of prior art memories as discussed above. In view of the foregoing, a preferred embodiment of the present invention contemplates a column register suitable for an integrated circuit memory, for instance in EEPROM technology, which comprises, for a memory word having 2 p memory cells each connected to a respective bit line:

2 q high-voltage latches, where q is a whole number less than p, each comprising high-voltage memorization means for memorizing a binary data in the form of a high programming voltage or a zero voltage, coupled to conditional and selective switching means, to bring to the high programming voltage a determined bit line among 2 p-q bit lines; and

2 p -2 q low-voltage latches, each comprising low-voltage memorization means for memorizing a binary data in the form of a low supply voltage or a zero voltage, and coupling means at the input of one of the high-voltage latches, Which can be activated to load into the high-voltage latch the binary data memorized in the low-voltage latch.

In an example which shall be detailed below, p is equal to 3 and q is equal to 2. Thus, for a memory word of eight memory cells, the column register in accordance with the invention comprises four high-voltage latches and four low-voltage latches instead of the eight high-voltage of a register according to the state of the art. Now, a low-voltage latch takes up a lot less space on the doped silicon substrate than a high-voltage latch. The invention therefore makes it possible to reduce the space globally occupied by the column register on the silicon substrate.

The invention also concerns a memory, notably in EEPROM technology, comprising a memory plane with at least one memory word of 2 p cells, each connected to a respective bit line, which comprises a column register such as defined above.

Moreover, the invention also proposes a method of writing at least one data word of 2 p bits in such a memory, which comprises the following steps:

1) erasing all the cells of the memory word;

2) loading 2 q data in the 2 q high-voltage latches, and loading 2 p -2 q other data in the 2 p -2 q low-voltage latches;

3) programming 2 q cells of the memory as a function of the data memorized in the 2 q high-voltage latches;

as well as repeating 2 p-q −1 times the following steps:

4) loading, in the 2 q high-voltage latches, of 2 q of the other data that were loaded in 2 q low-voltage latches at step 2);

5) programming 2 q other cells of the memory as a function of the data memorized in the 2 q high-voltage latches.

BRIEF DESCRIPTION OF THE DRAWINGS

Other characteristics and advantages of the invention shall become apparent upon reading the following description. The latter is purely illustrative and is to be read in conjunction with the appended drawings in which:

FIG. 1 , already described above, is a diagram of a memory cell in EEPROM technology;

FIG. 2 , already described above, is a diagram of a high voltage latch of a column register known in the state of the art;

FIG. 3 , also already described above, is a diagram of the surface area occupied by a memory word of one byte and by a corresponding column register according to the state of the art;

FIG. 4 is a diagram of column registers according to the invention;

FIG. 5 is a detailed diagram of a high-voltage latch and of a low voltage latch in accordance with the invention;

FIGS. 6 a to 6 h are timing charts of signals that come into play in the write mode of the memory; and

FIG. 7 is a diagram showing the area occupied by a memory word of one byte and by a corresponding column register in accordance with the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 4 shows the diagram of a column register according to the invention.

For a memory word occupying eight memory cells M 0 to M 7 , each connected to different bit line, respectively BL 0 to BL 7 , the register comprises—in a simple example—four high voltage latches HV 1 , HV 3 , HV 5 and HV 7 and four low voltage latches LV 0 , LV 2 , LV 4 , and LV 6 . The high voltage latches are slightly different both functionally and structurally from the high voltage latch according to the prior art that was described with reference to FIG. 2 .

Signals D 0 bar, D 2 bar, D 4 bar and D 6 bar corresponding to the inverse of data to be written are supplied to an input M of the low-voltage latches respectively LV 0 , LV 2 , LV 4 , and LV 6 . Signals D 1 bar, D 3 bar, D 5 bar and D 7 bar corresponding to the inverse of the data to be written are supplied to an input N of the high-voltage latches respectively HV 1 , HV 3 , HV 5 and HV 7 .

The high-voltage latches HV 1 , HV 3 , HV 5 and HV 7 comprise two outputs X and Y connected to two respective bit lines of the memory, preferably two adjacent bit lines to limit the length of the connections. These are respectively bit lines BL 0 and BL 1 for high-voltage latch HV 1 , BL 2 and BL 3 for latch HV 3 , BL 4 and BL 5 for latch HV 5 and finally BL 6 and BL 7 for latch HV 7 .

The high-voltage latches HV 1 , HV 3 , HV 5 and HV 7 comprise two inputs U and V respectively receiving a first selection signal WRMD 1 and a second selection signal WRMD 2 . These are high-voltage signals of which only one at a time can have a level equal to VPP. As will be seen in more detail further, these signals allow to select the one of the two bit lines connected to the outputs X and Y of each high-voltage cell which is taken, as the case arises (as a function of the data memorized in the high voltage latch), to the high programming voltage VPP.

Finally, the low-voltage latches LV 0 , LV 2 , LV 4 , and LV 6 each comprise inputs P and Q, and the high-voltage latches HV 1 , HV 3 , HV 5 and HV 7 each comprise inputs R, S and T, for which the following shall be noted:

inputs P of the low-voltage latches together receive a first reset to zero signal RLAT 1 ;

inputs T of the high-voltage latches together receive a second reset to zero signal RLAT 2 ;

inputs R of the high-voltage latches are together connected, or not connected, to ground via a first loading transistor TC 1 and a selection transistor TS 1 when the signal level of a first loading signal LOAD 1 and the signal level of a memory word selection signal COL are equal to VCC;

inputs Q of the low-voltage latches are together connected, or not connected, to ground via a second loading transistor TC 2 and the selection transistor TS 1 , when the signal level of a second loading signal LOAD 2 and the signal level of the memory word selection signal COL of the binary word are equal to VCC; and

inputs S of the high-voltage latches are together connected, or not connected, to ground via the selection transistor TS 1 , when the level of the word selection signal COL is equal to VCC.

In FIG. 4 , there is also shown a sequencer SEQ of the memory, which generates a signal ERASE which shall be discussed later, as well as the above-mentioned signals COL, WRMD 1 , WRMD 2 , RLAT 1 , RLAT 2 , LOAD 1 and LOAD 2 .

Before describing the operation of the column register in accordance with a preferred embodiment of the present invention, there shall now be described, from both a structural and functional point of view, the high-voltage latches and the low-voltage latches in accordance with the preferred embodiment of the invention. To this end, reference shall be made to FIG. 5 which shows the detailed diagram of the high-voltage latch HV 1 and of the low voltage latch LV 0 . Nevertheless, it is clear that the description that follows applies equally to the other high-voltage latches and to the other low-voltage latches respectively. In FIG. 5 , the elements of the high-voltage latch HV 1 in accordance with the invention which are identical to the elements of latch BHT of the prior art shown in FIG. 2 carry the same references.

Thus, the high-voltage latch HV 1 comprises high-voltage memorization means for memorizing a binary data in the form of a high programming voltage VPP or a zero voltage. These high-voltage memorization means comprise two high-voltage inverters I 1 and I 2 in CMOS technology connected “head to tail” between a node A and a node B.

In accordance with the invention, the high-voltage memorization means are coupled not to simple conditional switching means such as transistor SW in FIG. 2 , but to conditional and selective switching means. By this term is meant the fact that such means enable to bring to a high programming voltage VPP, still in a conditional manner, a determined bit line among the two bit lines BL 0 and BL 1 . These conditional and selective switching means comprise the transistor SW connected by its gate to the output B of the high-voltage memorization means I 1 , I 2 , to the high programming voltage Vpp by its drain and to the two bit lines BL 0 , BL 1 via a respective N-type MOS transistor referenced WRT 1 and WRT 2 respectively. Transistors WRT 1 and WRT 2 form bit line selection means.

The gates of transistors WRT 1 and WRT 2 are respectively connected to the inputs U and V of the high-voltage latch to receive the selection signals WRMD 1 and WRMD 2 respectively. In this manner, transistors WRT 1 and WRT 2 provide both a function of isolating the bit lines in the readout mode (when the level of the two signals WRMD 1 and WRMD 2 is equal to zero), and a function of selecting one among the two bit lines BL 0 and BL 1 in the write mode (when the level of just one of these signals WRMD 1 and WRMD 2 is equal to VCC). We insist to note that transistors WRT 1 and WRT 2 not only continue to provide the isolation function that was attributed to them in the prior art high-voltage latches, but that, in addition, in accordance with the invention, they equally provide a selection function which adds to their known isolation function. In yet other words, transistors WRT 1 and WRT 2 cooperate with transistor SW to provide the conditional and selective switching function.

In addition, the high-voltage latch HV 1 comprises first loading means for loading a binary data in the high-voltage memorization means I 1 , I 2 . These loading means comprise the transistors N 1 and N 2 already described with reference to FIG. 2 , as well as the loading transistor TC 1 discussed above with reference to FIG. 4 . The operation of these means stems from what was said above in the above-mentioned passages and does not call for specific comments to one of ordinary skill in the art.

Each low voltage latch such as latch LV 0 comprises low-voltage memorization means for memorizing a binary bit of a binary data in the form of a low-voltage supply VCC or a zero voltage. These low-voltage memorization means comprise two low-voltage inverters I 3 and I 4 in CMOS technology connected “head-to-tail” between a node C and a node D. A low-voltage inverter is an inverter which can receive and deliver a signal whose level is either zero or the low power supply voltage Vcc. By convention, the output of the low-voltage memorization means I 3 , I 4 is taken from node D and their input on node C.

Low-voltage latch LV 0 comprises second loading means for loading a binary data in the low voltage memorization mean I 3 , I 4 . These loading means comprise firstly an N-type MOS transistor referenced N 3 connected by its drain to node C, by its gate to input M of latch LV 0 to receive the signal D 0 bar, and by its source to the drain of the first loading transistor TC 1 (assimilated here to input R of the high-voltage latch HV 1 ). Secondly, they comprise an N-type MOS transistor referenced N 4 , connected by its drain to node D, by its gate to input P of the latch to receive the reset-to-zero voltage RLAT 1 , and by its source to the drain of a memory word selection transistor (assimilated here to the input S of the high-voltage latch HV 1 ). The operation of transistors N 3 and N 4 of the second loading means is identical respectively to that of transistors N 1 and N 2 of the first loading means described above with reference to FIG. 2 . It therefore calls for no specific comment to the skilled person.

Note that the first and second loading means share at least the first loading transistor TC 1 , such that the first and second loading means can be activated simultaneously by means of the first loading signal LOAD 1 which is applied to the gate of the first loading transistor TC 1 . This simultaneous activation has the effect of loading a first and a second binary data respectively in the low-voltage memorization means I 3 , I 4 of the low-voltage latch and in the high-voltage memorization means I 1 , I 2 of the high voltage latch, respectively as a function of signals D 0 bar and D 1 bar. On the other hand, the first and second loading means respond to respective reset-to-zero signals RLAT 2 and RLAT 1 , as will appear more clearly in what follows.

The low-voltage latch LV 0 also comprise coupling means at input A of one of the high-voltage latches, namely high-voltage latch HV 1 . These coupling means can be activated to load into high-voltage latch HV 1 the binary data memorized in the low-voltage latch LV 0 . In other words, the binary data memorized by the low-voltage memorization means I 3 , I 4 of the low voltage latch LV 0 can be transferred into the high-voltage memorization means of the high-voltage latch HV 1 .

The coupling means of the low-voltage latch LV 0 comprise an N-type MOS transistor designated N 5 connected by its gate to the output D of the low-voltage memorization means I 3 , I 4 , by its drain to input A of the high-voltage memorization means I 1 , I 2 of one of the high-voltage latches, namely high voltage latch HV 1 , and by its source to the input Q of the low-voltage latch. In this way, the coupling means are activated by the output of the low-voltage memorization means I 3 , I 4 when the input Q is brought to ground in the manner explained above with reference to FIG. 4 .

The operation of the column register of FIG. 4 shall now be described with reference to the timing charts of FIGS. 6 a to 6 h . These figures show the shape of the signals respectively COL, ERASE, WRMD 1 , WRMD 2 , RLAT 1 , LOAD 1 , RLAT 2 and LOAD 2 for a write operation in the memory. The logical implications between the different transitions of these signals is materialized by arrows. Signals COL, ERASE, RLAT 1 , LOAD 1 , RLAT 2 and LOAD 2 are low-voltage signals, i.e. their level is either zero or equal to VCC. Signals WRMD 1 and WRMD 2 are high-voltage signals, i.e. their level is either zero or equal to VPP.

A method of writing an eight-bit data word in the memory in accordance with the invention comprises the steps that shall now be described.

The method begins first of all with a step 1 of erasing all the cells of a memory word into which the binary word is to be written. This step begins with the transition to VCC of signal COL, which has the effect of making the selection transistor TS 1 conducting. The memory word formed by memory cells M 0 to M 7 is then selected for writing. The ERASE signal then passes to VCC to command the memory erasure circuits (not shown), which enable to apply the required erasure voltages to the terminals of memory cells M 0 to M 7 . This step 1 ends with the return to zero of the ERASE signal. Note that this erasure step 1 is not necessarily required if the memory is not a memory made in EEPROM technology.

The method then comprises a step 2 of loading four items of data into the four high-voltage latches HV 1 , HV 3 , HV 5 , and HV 7 , and of loading four other items of data into the low-voltage latches LV 0 , LV 2 , LV 4 and LV 6 . The data thus loaded are the data inverse to the data to write in the memory word M 0 -M 7 , and are delivered by the signals D 0 bar to D 7 bar (FIG. 4 ).

Step 2 is divided into two stage. At a first stage, signals RLAT 1 and RLAT 2 pass to VCC so making conducting the transistor N 4 of the low voltage latches LV 0 , LV 2 , LV 4 , and LV 6 and the transistor N 2 of the high-voltage latches HV 1 , HV 3 , HV 5 , and HV 7 such that the data zero is memorized by their respective memorization means. At a second stage, the signals RLAT 1 and RLAT 2 return to zero, so blocking the above-mentioned transistors N 4 and N 2 . The first loading signal LOAD 1 then passes to VCC, which causes the loading transistor TC 1 to be conductive, such that the data inverse to the data to be written, when they have binary values 1 delivered by the signals D 0 bar to D 7 bar (as the case arises in the form of signals having a level equal to VCC), are memorized in the respective memorization means of the high voltage latches HV 1 , HV 3 , HV 5 , and HV 7 and of the low voltage latches LV 0 , LV 2 , LV 4 , and LV 6 . At the end of this stage, the data inverse to the data to be written, whether they be equal to 0 or to 1, are memorized in the respective memorization means I 1 , I 2 and I 3 , I 4 of the high-voltage latches and of the low-voltage latches. Stage 2 of loading ends by the reset-to-zero of the first loading signal LOAD 1 .

Note that the order of erasure step 1 and the loading step 2 can be reversed.

The process then comprises a step 3 of programming four memory cells of the memory as a function of the data memorized in the four high-voltage latches HV 1 , HV 3 , HV 5 , and HV 7 . In the example, the four cells concerned are the cells M 0 , M 2 , M 4 and M 6 . To this end, the signal WRMD 1 passes to VPP (while the signal WRMD 2 remains at zero) so that the bit lines BL 0 , BL 2 , BL 4 and BL 6 are selected for writing. The conditional programming of the cells M 0 , M 2 , M 4 and M 6 then takes place by conditional switching of these bit lines to the high programming voltage VPP by means of transistors SW, as a function of data memorized in the high-voltage memorization means of the high-voltage cells HV 1 , HV 3 , HV 5 , and HV 7 . The programming step 3 ends by the return to zero of signal WRMD 1 , which has the effect of isolating once again the bit lines BL 0 , BL 2 , BL 4 and BL 6 from the high voltage VPP.

The process then comprises a step 4 of loading into the four high-voltage latches the voltage HV 1 , HV 3 , HV 5 , and HV 7 of the four data that were previously loaded into the low-voltage latches LV 0 , LV 2 , LV 4 and LV 6 at step 2.

This step 4 is divided into two stages. At a first stage, the signal RLAT 2 passes to VCC so making the transistor N 2 of the high-voltage latches HV 0 , HV 2 , HV 4 and HV 6 conducting, so that the data 0 is memorized in their respective memorization means. At a second stage, the signal RLAT 2 returns to zero, which blocks transistor N 2 . The second loading signal LOAD 2 then passes to VCC, which makes the loading transistor TC 2 conducting, so that the data memorized in the low-voltage memorization means I 3 , I 4 of the low voltage latches LV 0 , LV 2 , LV 4 , and LV 6 , when they are equal to 1, are respectively loaded in the high-voltage memorization means I 1 , I 2 of the high voltage latches respectively HV 1 , HV 3 , HV 5 , and HV 7 . In brief, at the end of this step, the binary data previously memorized in the low-voltage memorization means I 3 , I 4 of the low voltage latches, whether they be equal to 0 or 1, are memorized in the high-voltage memorization means of the high-voltage latches. In other words, these data have been transferred at step 4 from the low-voltage memorization means I 3 , I 4 of the low-voltage latches LV 0 , LV 2 , LV 4 and LV 6 to the high-voltage memorization means I 1 , I 2 of the high voltage latches HV 1 , HV 3 , HV 5 , and HV 7 . Step 4 ends with the return to zero of the second loading signal LOAD 2 .

The method finally comprises a step 5 of programming four other cells of the memory as a function of the data memorized in the four high-voltage latches HV 1 , HV 3 , HV 5 , and HV 7 . In the example, the four cells concerned are cells M 1 , M 3 , M 5 and M 7 . To this end, the signal WRMD 2 passes to VCC (while the signal WRMD 1 remains at zero) so that the bit lines BL 1 , BL 3 , BL 5 and BL 7 are selected for writing. The conditional programming of cells M 1 , M 3 , M 5 and M 7 then takes place by conditional switching of these bit lines to the high programming voltage VPP by means of transistors SW, as a function of data memorized in the high-voltage memorizing means HV 1 , HV 3 , HV 5 , and HV 7 . Programming step 5 ends by the return to zero of signal WRMD 2 , which has the effect of isolating again the bit lines BL 1 , BL 3 , BL 5 and BL 7 from the high voltage VPP.

Programming step 5 can possibly, but not necessarily, be followed by a step 6 of resetting to zero the respective memorization means I 3 , I 4 and I 1 , I 2 of low voltage latches LV 0 , LV 2 , LV 4 and LV 6 of the high voltage latches HV 1 , HV 3 , HV 5 , and HV 7 . To this end, the signals RLAT 1 and RLAT 2 pass to VCC which makes conducting the transistors N 4 of the low-voltage latches LV 0 , LV 2 , LV 4 and LV 6 and the transistors N 2 of the high-voltage latches HV 1 , HV 3 , HV 5 and HV 7 so that the binary data 0 is memorized in their respective memorization means I 3 , I 4 and I 1 , I 2 .

The process of writing a data word in the memory word M 0 -M 7 ends with the return to zero of the memory word selection signal COL.

FIG. 7 shows schematically the area occupied by a memory plane MM of one byte comprising the eight memory cells M 0 to M 7 forming a memory word and area occupied by the four high-voltage latches HV 1 , HV 3 , HV 5 and HV 7 as well as the four low-voltage latches LV 0 , LV 2 , LV 4 and LV 6 . Comparing this figure with FIG. 3 , we note that the area occupied by a column register according to the invention is less than that occupied by a prior art column register. This comes from the fact area occupied by a low-voltage latch is less than that occupied by a high-voltage latch.

The invention has only been described above for the non-limiting example of a case in which a column register comprises, for a memory word of eight memory cells, four high-voltage latches and four low-voltage latches. Nevertheless, it can be generalized of a column register comprising, for a memory word comprising 2 p memory cells each connected to a Respective bit line, where p is a non zero whole number, 2 q high-voltage latches, where q is a whole number less than p, and 2 p -2 q low-voltage latches. Note that the smaller is the value of q, the higher is the gain in silicon area compared to a register of the prior art.

In this case, the high-voltage latch selection means allow to select a bit line determined among 2 p-q bit lines. To this end, it is necessary to provide for each one 2 p-q transistors such as the selection transistors WRT 1 and WRT 2 and as many selection signals such as signals WRMD 1 and WRMD 2 . Moreover, several low-voltage latches are connected by the drain of their coupling transistor N 5 to the input A of a same high-voltage latch. It is therefore necessary to provide 2 p-q −1 loading transistors such as transistor TC 1 .

Also, the loading step 2 then concerns the loading of 2 q data into 2 q high-voltage latches, and the loading of 2 p -2 q other data in the 2 p -2 q low voltage latches. Likewise, programming step 3 then concerns the programming of 2 q cells of the memory as a function of the data memorized in the 2 q high-voltage latches. Moreover, loading step 4 and programming step 5 are then repeated 2 p-q −1 times. Loading step 4 then concerns the loading, in the 2 q high-voltage latches, of 2 q of the other data that were previously loaded into the 2 q low voltage latches at loading step 2. Finally, the programming step 5 then concerns the programming of the 2 q other cells of the memory as a function of the data memorized in the 2 q high-voltage latches.

With these general expressions, it will be understood that the embodiment described above is a specific embodiment in which p is equal to 3 and q is equal to 2.

Also, it is possible to carry out steps 1) and/or 3) to 5) simultaneously for several or all of the memory words of a same line of memory cells of the memory, when the memory comprises such a plurality of memory words per line.

In this case, there should be provided as many selection transistors and memory word selection signals, such as respectively transistor TS 1 and the signal COL, as there are memory words in the line. However, the reset-to-zero RLAT 1 and RLAT 2 , the loading signals LOAD 1 and LOAD 2 , and the selection signals WRMD 1 and WRMD 2 can be supplied as they are at the respective inputs of the latches of each column register comprised in the memory. There is thus provided the possibility of writing in the page mode in accordance with the teachings of the invention.

Note that it does not seem possible to envision implementing loading step 2 simultaneously for several or even all the memory words of a same line of cells of the memory. Indeed, that would call for means for storing data inverse to the data to be written, which are specific to each memory word, and that would increase the number and length of connection lines necessary for conveying these data to the M and N inputs of the low-voltage and high-voltage latches respectively.

While there has been illustrated and described what are presently considered to be the preferred embodiments of the present invention, it will be understood by those of ordinary skill in the art that various other modifications may be made, and equivalents may be substituted, without departing from the true scope of the present invention. Additionally, many modifications may be made to adapt a particular situation to the teachings of the present invention without departing from the central inventive concept described herein. Furthermore, an embodiment of the present invention may not include all of the features described above. Therefore, it is intended that the present invention not be limited to the particular embodiments disclosed, but that the invention include all embodiments falling within the scope of the appended claims.

Claims

1. A method of writing at least one data word of 2p bits in a memory, the memory comprising a memory plane with at least one memory word of 2p cells, each connected to a respective bit line, and wherein the memory plane comprises a column register comprising 2q high-voltage latches and 2p-2q low-voltage latches, where p is a non-zero whole number and where q is a whole number less than p, each of the high-voltage latches comprising high-voltage memorization means for memorizing a binary data and each of the low-voltage latches comprising low-voltage memorization means for memorizing a binary data, the method comprising the following steps:1) erasing all the cells of a memory word; 2) loading 2q data in the 2q high-voltage latches, and loading 2p-2q other data in the 2p-2q low-voltage latches; and 3) programming 2q cells of the memory as a function of the data memorized in the 2q high-voltage latches; as well as repeating 2p-q−1 times the following steps: 4) loading, in the 2q high-voltage latches, of 2q of the other data that were loaded in 2q low-voltage latches at step 2); and 5) programming 2q other cells of the memory as a function of the data memorized in the 2q high-voltage latches.

2. The method according to claim 1, wherein p is equal to 3 and wherein q is equal to 2.

3. The method according to claim 1, wherein steps 1) and/or 3) to 5) are implemented simultaneously for several or the totality of the memory words of a same line of cells of the memory.

4. The method according to claim 1, wherein the programming step 5) is followed by a step 6) of resetting to zero the respective memorization means of the low-voltage latches and of the high-voltage latches.

5. The method according to claim 4, wherein steps 1) and/or 3) to 5) are implemented simultaneously for several or the totality of the memory words of a same line of cells of the memory.

6. The method according to claim 4, wherein p is equal to 3 and wherein q is equal to 2.

7. The method according to claim 6, wherein steps 1) and/or 3) to 5) are implemented simultaneously for several or the totality of the memory words of a same line of cells of the memory.