This application is related to electronic component packaging. More particularly, this application is related to semiconductor packaging.
Thermal management is one of the biggest challenges facing designers. Many electronic components can benefit from packaging that allows better thermal performance. For example, light emitting diode (LED) die performance is extremely temperature sensitive. As LED junction temperature increases, LED efficiency drops, the lifetime of the LED is reduced and the overall light flux emitted from the LED declines.
A package for an electronic component and method of forming a package for an electronic component are disclosed. The package may include a metal base and a termination chip coupled to the metal base. The termination chip may include a die contact pad electrically coupled to a mounting pad and an isolating feature configured to provide electrical isolation between the metal base and the die contact pad. The contact may be configured for electrical connection to the electronic component.
The metal base may be folded to form a molding cavity. The metal base may be plated or metalized at selected areas. These metallized areas may include a layer of a layer of Ni and a layer of Au. These areas may also include a layers of solder such as Sn.
The package may include a light emitting diode (LED) coupled to the metal base. The LED may be coupled to the metal base via a eutectic bond. The package may include an electrostatic discharge (ESD) protection device coupled to the metal base. The package may include a plurality of angled die planes integrated into the metal base, the angled die planes being configured to mount a plurality of light emitting diodes.
The termination chip may include a plurality of embedded circuit components. The termination chip may include a metallized ceramic substrate configured to provide electrical isolation between the metal base and the plurality of terminations deposited on the termination chip. The termination chip may include a ceramic base and top, bottom and side copper pads configured to be soldered to the metal base. The termination chip may also include a plurality of embedded circuit components.
The package may include a metal base having a first and second terminal. The first terminal may have a die contact pad. The second terminal may have a wire bonding pad. The package may also include a package top configured to locate and secure the terminals. The package top may be formed with a cavity configured to expose the die contact pad and the wire bonding pad. The die contact pad being configured for electrical connection to the electronic component.
The package top may be formed with a raised portion. The metal base may be formed with a slot dimensioned to accept the raised portion. The raised portion may electrically isolate the first and second terminals. The metal base may include at least one plating layer. The metal base may have an upper surface plated with a layer of gold. The metal base may have a lower surface plated with a layer of solder.
The package may include a semiconductor die mounted in the cavity and electrically connected to the die contact pad. The semiconductor die may be a light emitting diode (LED). The LED may be coupled to the metal base via a eutectic bond. The package may include a wire bond electrically connecting at least a portion of the semiconductor die to the wire bonding pad. The package may include an electrostatic discharge (ESD) protection device coupled to the metal base. The package may include a plurality of angled die planes integrated into the metal base, the angled die planes being configured to mount a plurality of light emitting diodes. The package top may be joined to the metal base by at least one of an adhesive and an electrically conductive material. The package top may be molded to the metal base. The package may include a molding material filling the cavity.
A more detailed understanding may be had from the following description, given by way of example in conjunction with the accompanying drawings wherein:
Various packaging technologies can be used to address thermal issues. For example:
1. Packages based on highly thermally conductive ceramic substrates.
2. Packages based on LTCC or molded compounds with metal lead frames. These packages might include a metal heat sink.
3. Packages based on metal-core or metal-backed printed circuit boards.
The following disclosure is directed to the fabrication of electrical components, such as light emitting diodes (LEDs) from metal base strips. The use of such structures is beneficial in the manufacture of electronic component packages with enhanced thermal management.
Important aspects of such structures are:
1. Compared to ceramic alternatives, metal base allows superior thermal conductivity at lower cost.
2. Compared to molded lead frame packages, the metal base allows the use of a eutectic die bond. Molding compounds decompose at high temperature while metal can withstands high temperature. The eutectic die bond is used to achieve lower thermal resistance between the die and the package.
3. The metal based package will allow standard surface mount technology (SMT) assembly. This feature is not possible with Metal-Core or Metal-Backed Printed circuit board alternatives due to the fact that these technologies allow only a single sided design.
4. Alternative packaging technologies conduct heat from the junction (die) to the circuit board. By integrating heat sink fins to the metal base package, the new packaging technology can sink heat directly to ambient, in addition to conventional heat conduction to the circuit board.
5. The metal base package allows the option of creating an angle between the die assembly plane and the package assembly plane. A plurality of light emitting diodes, with differing die planes will result in an improved light radiation pattern. This feature eliminates the need for lenses to achieve the same purpose.
The following is a description of a metal based electronic component package and a method of manufacturing the same by a combination of following manufacturing processes. It is understood that the disclosed manufacturing processes need not be carried out in order. It is also understood that some steps can be combined or omitted.
A metal base compound is selected to optimize the trade off between package features such as cost, thermal conductivity, light reflectance, thermo-mechanical properties, ease of fabrication and electrical properties. In the following example, a copper strip is used.
As shown in
The metal base 5 can be mechanically manipulated to feature an angle between the die assembly plane and the package assembly plane.
The metal base 5 can be metallized to facilitate package features that might include: SMT package assembly pads, eutectic die attach pads, adhesive die attach pads, bond wire pads, reflective areas, mechanical and chemical protection, esthetic requirements etc. The metallization process can be achieved by one or more techniques such as: sputtering, electro plating, Electroless plating, dipping, screen printing or other paste deposition techniques etc. In the example shown in
As shown in
A connecting mechanism is used to insure package integrity. The connecting mechanism can include one or more of the following techniques such as: mechanical fixturing (pin and socket, clasp etc), adhesives, solders etc. In this example, a solder reflow process is used as the connecting mechanism between the folded metal flap and the termination chip 20.
The termination chip can be utilized for the purpose of embedding desirable circuit elements into the package. These may include single elements or complex networks. Such elements may include resistors, inductors and capacitors as well as fuse element, diodes and/or other devices. Of particular interest is the option to embed elements that can be manipulated to accommodate the characteristics of the packaged device. For example, embedded resistors can be trimmed to compensate for the tolerance of the packaged component.
a shows an individual package separated from the metal base 5. Once the package is separated, a metal base package for electronic components is formed.
The example shown above is directed to a package for a two terminal electronic component. It should be understood that the package can be used in connection with electronic components having thee or more terminals.
A three terminal device such as a metal oxide semiconductor (MOS) field effect transistor (FET) 66 is mounted in the molding cavity 68. The body of the MOS FET is coupled to the metal base 70 and functions as the source terminal. Wire bonds 72 electrically couple the MOS FET drain terminal to the first die contact pad 54. Wire bond 74 electrically couple the MOS FET gate terminal to the second die contact pad 56. It should be understood that a wide variety of multi-terminal electronic components can be mounted in the disclosed package without departing from the scope of this disclosure. It should also be understood that techniques other than bond-wires can be used to achieve electric connectivity between the die and the package. For example, the die can be flipped facing down and connected directly to the die contact pads.
The examples shown above are directed to package structures with a flat surface for mounting the electronic component (e.g., the die is mounted parallel to the mounting surface). In some cases, it may be desirable to provide an angled die mounting plane.
a shows a package 90 with a flat die mounting plane 92. When used with an LED device 94, the LED radiation pattern 96 has an axis 98 that is generally orthogonal to die mounting plane 92 and the metal base 100.
In another embodiment, a metal base and ceramic or plastic top can be constructed as follows:
As shown in
The package top 27 may be joined to the lead frame via an adhesive. The adhesive can be applied to the leadframe in locations corresponding to the contact surfaces of the package top. Another assembly technique is to metalize the terminal side of the package top at the terminal leadframe interface to facilitate soldering during the package assembly process. These metalized areas may be thick film on ceramic or a sputtered seed layer on ceramic or plastic which is then electroplated with nickel and a high temperature solder. In the alternative, the package top 27 may be molded to the leadframe in cases where the package top is formed of a moldable material.
While the assemblies are still connected to the leadframe a semiconductor die may be mounted into the opening in the package top 27. As noted above, a portion of terminal 23 is exposed by the cavity formed in the package top 27 forming a die contact pad 30. The die 31 can be die bonded to the larger terminal 23 with via an electrically conductive material such as solder. A wire 34 can then be bonded between the die and the die contact pad 30 and terminal 24. The cavity 29 can then be filled with a non-conductive molding material that protects the die. As shown in
Although features and elements are described above in particular combinations, each feature or element can be used alone without the other features and elements or in various combinations with or without other features and elements.
This application claims the benefit of U.S. Provisional Application No. 61/298,123, filed Jan. 25, 2010 and U.S. Provisional Application No. 61/345,746, filed May 18, 2010, the contents of which is hereby incorporated by reference herein in their entireties.
Number | Date | Country | |
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61298123 | Jan 2010 | US | |
61345746 | May 2010 | US |