Claims
- 1. A metal insulator semiconductor field-effect transistor (MISFET) comprising:
- a) a gate electrode;
- b) a semiconductor substrate composed of a semiconductor material other than silicon; and
- c) an insulating layer disposed between said gate electrode and said semiconductor substrate, composed of amorphous, hydrogenated carbon (a-C:H), having a thickness in the region of the gate electrode less than or equal to 1 .mu.m, and having a boundary surface to the semiconductor substrate with a resistivity (.rho.) of greater than or equal to 10.sup.6 .OMEGA..multidot.cm.
- 2. The MISFET according to claim 1, wherein the boundary surface comprises a resistivity (.rho.) less than or equal to 10.sup.9 .OMEGA..multidot.cm.
- 3. The MISFET according to claim 2, wherein the boundary surface comprises a thickness less than or equal to 50 nm.
- 4. The MISFET according to claim 3, wherein the semiconductor substrate comprises a monocrystalline material.
- 5. The MISFET according to claim 4, wherein the semiconductor material is selected from the group consisting of Ge, AlP, GaAs, GaP, GaSb, InAs, InP and InSb.
- 6. The MISFET according to claim 3, wherein the semiconductor material is selected from the group consisting of Ge, AlP, GaAs, GaP, GaSb, InAs, InP and InSb.
- 7. The MISFET according to claim 2, wherein the semiconductor substrate comprises a monocrystalline material.
- 8. The MISFET according to claim 7, wherein the semiconductor material is selected from the group consisting of Ge, AlP, GaAs, GaP, GaSb, InAs, InP and InSb.
- 9. The MISFET according to claim 2, wherein the semiconductor material is selected from the group consisting of Ge, AlP, GaAs, GaP, GaSb, InAs, InP and InSb.
- 10. The MISFET according to claim 2, further comprising a source, a drain, and an a-C:H layer covering the semiconductor substrate in an area outside of the source and the drain.
- 11. The MISFET according to claim 1, wherein the boundary surface comprises a thickness less than or equal to 50 nm.
- 12. The MISFET according to claim 11, wherein the semiconductor substrate comprises a monocrystalline material.
- 13. The MISFET according to claim 12, wherein the semiconductor material is selected from the group consisting of Ge, AlP, GaAs, GaP, GaSb, InAs, InP and InSb.
- 14. The MISFET according to claim 11, wherein the semiconductor material is selected from the group consisting of Ge, AlP, GaAs, GaP, GaSb, InAs, InP and InSb.
- 15. The MISFET according to claim 11, further comprising a source, a drain, and an a-C:H layer covering the semiconductor substrate in an area outside of the source and the drain.
- 16. The MISFET according to claim 1, wherein the semiconductor substrate comprises a monocrystalline material.
- 17. The MISFET according to claim 16, wherein the semiconductor material is selected from the group consisting of Ge, AlP, GaAs, GaP, GaSb, InAs, InP and InSb.
- 18. The MISFET according to claim 1, wherein the semiconductor material is selected from the group consisting of Ge, AlP, GaAs, GaP, GaSb, InAs, InP and InSb.
- 19. The MISFET according to claim 1, further comprising a source, a drain, and an amorphous, hydrogenated carbon (a-C:H) layer covering the semiconductor substrate in an area outside of the source and the drain.
- 20. The MISFET according to claim 1, wherein the a-C:H layer is produced by a high-frequency, low-pressure plasma deposition of gaseous hydrocarbons.
Priority Claims (1)
Number |
Date |
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Kind |
4026314 |
Aug 1990 |
DEX |
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Parent Case Info
This application is a continuation of application Ser. No. 07/745,420, filed on Aug. 15, 1991, now abandoned.
US Referenced Citations (4)
Non-Patent Literature Citations (3)
Entry |
J. Appl. Phys., vol. 62 (Nov. 1987), pp. 3799-3802. |
Appl. Phys., vol. A 48 (Jan 1989), pp. 549-558. |
W. Kellner, H. Kniepkamp "GaAs-Feldeffekttransistoren", 2nd Ed., (Jan. 1989), Springer-Verlag, pp. 19-29 & 55. |
Continuations (1)
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Number |
Date |
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Parent |
745420 |
Aug 1991 |
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