Claims
- 1. A method for forming a lithographic processed resist pattern for a semiconductor device, comprising the steps of:
- applying a resist material selected from the group consisting of a photoresist material, a far untraviolet sensitive material, an electron beam sensitive resist material, an X-ray sensitive resist material and an ion beam sensitive material to a rigid substrate to form a resist film thereon;
- baking said resist film;
- cooling said resist film, said cooling being controlled with a cooling means such that an entire area of said resist film is kept at a uniform temperature, said cooling means being a cooling plate for bringing into contact with or adjacent to said substrate;
- selectively irradiating a surface of said resist film with at least one member selected from the group consisting of electron beams, light rays, X-rays and ion beams; and
- developing said resist film to form a resist pattern.
- 2. A method according to claim 1, wherein said cooling performed at a cooling rate of 0.8.degree. C./sec or more.
- 3. A method according to claim 1, wherein said baking is performed at or above the glass transition temperature of said resist.
- 4. A method for forming a lithographic processed resist pattern for a semiconductor device, comprising the steps of:
- applying a resist material selected from the group consisting of a photoresist material, a far ultraviolet sensitive material, an electron beam sensitive resist material, an X-ray sensitive resist material and an ion beam sensitive material to a substrate to form a resist film thereon;
- prebaking said resist film formed on said substrate;
- cooling said resist film;
- selectively irradiating a surface of said resist film with at least one member selected from the group consisting of electron beams, light rays, X-rays and ion beams;
- baking said resist film;
- cooling said resist film in a controlled manner with a cooling means such that an entire area of said resist film is kept at a uniform temperature, said cooling means being a cooling plate for bringing into contact with or adjacent to said substrate; and
- developing said resist film to form a resist pattern on said substrate.
- 5. A method according to claim 4, wherein said cooling is performed at a cooling rate of 0.8.degree. C./ sec or more.
- 6. A method according to claim 4, wherein said baking is performed at or above the glass transition temperature of said resist.
Priority Claims (4)
Number |
Date |
Country |
Kind |
58-5876 |
Jan 1983 |
JPX |
|
58-5877 |
Jan 1983 |
JPX |
|
58-6984 |
Jan 1983 |
JPX |
|
58-6985 |
Jan 1983 |
JPX |
|
Parent Case Info
This application is a continuation of Ser. No. 789,366, filed Oct. 22, 1985, now U.S. Pat. No. 4,717,645, which is a continuation of application Ser. No. 671,092, filed Jan. 16, 1984, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (2)
Number |
Date |
Country |
53-98782 |
Aug 1978 |
JPX |
57-149731 |
Sep 1982 |
JPX |
Non-Patent Literature Citations (5)
Entry |
"Resists for Fine-Line Lithography" by Michael Hatzakis; Proceedings of the IEEE, vol. 71, No. 5, May 1983, pp. 570-574. |
"Integrated Circuit Fabrication Technology" by David J. Elliott McGraw-Hill Book Company, pp. 312-319. |
"Prebaking Positive Photoresists" by Gordon MacBeth, Eastman Kodak Co., Interface '82, Microelectronics Seminar, San Diego, Calif., Oct. 22, 1982. |
"Shipley Microposit Photoresist Technical Manual", Oct., 1982. |
"Photoresist Materials and Processes" by W. S. DeForest; McGraw Hill Book Company, 1975. |
Continuations (2)
|
Number |
Date |
Country |
Parent |
789366 |
Oct 1985 |
|
Parent |
571092 |
Jan 1984 |
|