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4281030 | Silfvast | Jul 1981 | A |
4664940 | Bensoussan et al. | May 1987 | A |
4941430 | Watanabe et al. | Jul 1990 | A |
5565377 | Weiner et al. | Oct 1996 | A |
5569624 | Weiner | Oct 1996 | A |
5841197 | Adamic, Jr. | Nov 1998 | A |
5925421 | Yamazaki et al. | Jul 1999 | A |
Number | Date | Country |
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63-40318 | Feb 1988 | JP |
3-283626 | Dec 1991 | JP |
05-21605 | Jan 1993 | JP |
5-326430 | Dec 1993 | JP |
Entry |
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Weiner et al.,“Low-Temperature Fabrication of p+−n Diodes with 300 Å Junction Depth” IEEE, IEDM, v. 13, No. 7, Jul. 1992, pp. 369-371. |