Vertical insulated gate bipolar transistors

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H01L29/66333

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66333Vertical insulated gate bipolar transistors

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Patents Grantslast 30 patents

Information Patent Grant
Vertical power semiconductor device and manufacturing method
- Patent number 12,224,317
- Issue date Feb 11, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,154,943
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
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Information Patent Grant
Strain enhanced SiC power semiconductor device and method of manufa...
- Patent number 12,113,131
- Issue date Oct 8, 2024
- HITACHI ENERGY LTD
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,094,959
- Issue date Sep 17, 2024
- Mitsubishi Electric Corporation
- Kazuya Konishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a control cell for controlling a...
- Patent number 12,087,816
- Issue date Sep 10, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with anti-parallelly connected FWD on a common substrate
- Patent number 12,080,705
- Issue date Sep 3, 2024
- Mitsubishi Electric Corporation
- Kenji Hamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a plurality of trenches
- Patent number 12,074,212
- Issue date Aug 27, 2024
- Infineon Technologies AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor structure with integrated sampling structure...
- Patent number 12,046,664
- Issue date Jul 23, 2024
- WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
- Pengfei Jia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside wafer dopant activation
- Patent number 12,046,473
- Issue date Jul 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction semiconductor device and method of manufacturing same
- Patent number 12,009,419
- Issue date Jun 11, 2024
- DB HiTek, Co., Ltd.
- Yong Sin Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical silicon carbide power MOSFET and IGBT and a method of manu...
- Patent number 11,967,616
- Issue date Apr 23, 2024
- HITACHI ENERGY LTD
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,949,007
- Issue date Apr 2, 2024
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including sense insulated-gate bipolar transistor
- Patent number 11,942,531
- Issue date Mar 26, 2024
- Rohm Co., Ltd.
- Akihiro Hikasa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side contact structure for a semiconductor device and correspo...
- Patent number 11,894,432
- Issue date Feb 6, 2024
- STMicroelectronics S.r.l.
- Crocifisso Marco Antonio Renna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and preparation method thereof
- Patent number 11,862,676
- Issue date Jan 2, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Dong Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,848,354
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating semiconductor device
- Patent number 11,830,871
- Issue date Nov 28, 2023
- Fuji Electric Co., Ltd.
- Kaname Mitsuzuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,823,898
- Issue date Nov 21, 2023
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,817,356
- Issue date Nov 14, 2023
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,749,716
- Issue date Sep 5, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor device including a field stop region h...
- Patent number 11,742,384
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside wafer dopant activation
- Patent number 11,694,897
- Issue date Jul 4, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with drain structure and metal drain electrode
- Patent number 11,652,137
- Issue date May 16, 2023
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device having super junction and Schottky diode
- Patent number 11,652,166
- Issue date May 16, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Wonhwa Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method
- Patent number 11,652,022
- Issue date May 16, 2023
- Infineon Technologies AG
- Josef Schaetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,610,882
- Issue date Mar 21, 2023
- Mitsubishi Electric Corporation
- Hiroyuki Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having guard ring structure, and method...
- Patent number 11,600,693
- Issue date Mar 7, 2023
- Littelfuse, Inc.
- Kyoung Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-punch-through reverse-conducting power semiconductor device and...
- Patent number 11,522,047
- Issue date Dec 6, 2022
- mqSemi AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 11,495,509
- Issue date Nov 8, 2022
- Denso Corporation
- Nobuyuki Katoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate bipolar transistor with enhanced frequency response,...
- Patent number 11,404,563
- Issue date Aug 2, 2022
- GLOBALFOUNDRIES U.S. INC.
- Viorel C. Ontalus
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20250015126
- Publication date Jan 9, 2025
- Infineon Technologies Austria AG
- Tobias Nardmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FIRST TRENCHES WITH A GATE ELECTRODE AN...
- Publication number 20240413229
- Publication date Dec 12, 2024
- INFINEON TECHNOLOGIES AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...
- Publication number 20240413208
- Publication date Dec 12, 2024
- Rohm Co., Ltd.
- Takuji MAEKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20240405095
- Publication date Dec 5, 2024
- Mosel Vitelic Inc.
- Ta-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT DEVICE AND PREPARATION METHOD THEREOF
- Publication number 20240363743
- Publication date Oct 31, 2024
- CHONGQING ALPHA AND OMEGA SEMICONDUCTOR LIMITED
- XIAOFENG QIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE BLOCKING INSULATED-GATE BIPOLAR TRANSISTOR
- Publication number 20240339520
- Publication date Oct 10, 2024
- LITTELFUSE, INC.
- PETER WAIND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE INCLUDING A DIODE AREA
- Publication number 20240332407
- Publication date Oct 3, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS
- Publication number 20240304709
- Publication date Sep 12, 2024
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240178306
- Publication date May 30, 2024
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20240162284
- Publication date May 16, 2024
- Fuji Electric Co., Ltd.
- Hiroshi TAKISHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR STRUCTURE WITH INTEGRATED SAMPLING STRUCTURE...
- Publication number 20240088273
- Publication date Mar 14, 2024
- Wuxi China Resources Huajing Microelectronics Co., Ltd
- PENGFEI JIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20240079406
- Publication date Mar 7, 2024
- Fuji Electric Co., Ltd.
- Kaname MITSUZUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047200
- Publication date Feb 8, 2024
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20240030323
- Publication date Jan 25, 2024
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230402511
- Publication date Dec 14, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER DEVICES HAVING MESAS AND ETCHED TRENCHES THEREBETWEEN
- Publication number 20230369445
- Publication date Nov 16, 2023
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Semiconductor Device and Manufacturing Method
- Publication number 20230352531
- Publication date Nov 2, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING SAME
- Publication number 20230335628
- Publication date Oct 19, 2023
- DB HiTek Co., Ltd.
- Ji Sun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS OF A VERTICAL-CHANNEL SEMICONDUCTOR DEVICE AN...
- Publication number 20230326995
- Publication date Oct 12, 2023
- STMicroelectronics S.r.l.
- Sebastiano AMARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20230317797
- Publication date Oct 5, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORT SHIELD STRUCTURES FOR TRENCHED SEMICONDUCTOR DEVICES
- Publication number 20230307529
- Publication date Sep 28, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MACRO CELLS
- Publication number 20230290827
- Publication date Sep 14, 2023
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230207674
- Publication date Jun 29, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE-CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND METHOD OF...
- Publication number 20230129950
- Publication date Apr 27, 2023
- DB HiTek Co., Ltd.
- Hee Sung OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230106654
- Publication date Apr 6, 2023
- Mitsubishi Electric Corporation
- Hiroyuki NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT DEVICE BACKSIDE STRUCTURE AND PREPARATION METHOD THEREFOR, AND...
- Publication number 20230077959
- Publication date Mar 16, 2023
- STATE GRID SMART GRID RESEARCH INSTITUTE CO., LTD.
- Li LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20230055755
- Publication date Feb 23, 2023
- Fuji Electric Co., Ltd.
- Yasuyuki KAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREOF, A...
- Publication number 20230015515
- Publication date Jan 19, 2023
- BYD SEMICONDUCTOR COMPANY LIMITED
- Hui ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE WAFER DOPANT ACTIVATION
- Publication number 20220415656
- Publication date Dec 29, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE WAFER DOPANT ACTIVATION
- Publication number 20220406604
- Publication date Dec 22, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Vertical insulated gate bipolar transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Vertical power semiconductor device and manufacturing method

Super junction power device and method of making the same

Strain enhanced SiC power semiconductor device and method of manufa...

Semiconductor device and method of manufacturing semiconductor device

Power semiconductor device having a control cell for controlling a...

IGBT with anti-parallelly connected FWD on a common substrate

Semiconductor device including a plurality of trenches

Vertical semiconductor structure with integrated sampling structure...

Backside wafer dopant activation

Superjunction semiconductor device and method of manufacturing same

Vertical silicon carbide power MOSFET and IGBT and a method of manu...

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device including sense insulated-gate bipolar transistor

Back side contact structure for a semiconductor device and correspo...

Semiconductor device and preparation method thereof

Diode structure of a power semiconductor device

Semiconductor device and method for fabricating semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device

Semiconductor device incorporating epitaxial layer field stop zone

Vertical power semiconductor device including a field stop region h...

Backside wafer dopant activation

Semiconductor device with drain structure and metal drain electrode

Power device having super junction and Schottky diode

Power semiconductor device and method

Semiconductor device and method of manufacturing semiconductor device

Power semiconductor device having guard ring structure, and method...

Non-punch-through reverse-conducting power semiconductor device and...

Semiconductor device and method for manufacturing semiconductor device

Insulated-gate bipolar transistor with enhanced frequency response,...

Patents Applicationslast 30 patents

Power Semiconductor Device and Method of Producing a Power Semicond...

SEMICONDUCTOR DEVICE HAVING FIRST TRENCHES WITH A GATE ELECTRODE AN...

SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...

METHOD FOR MANUFACTURING INSULATED GATE BIPOLAR TRANSISTOR

IGBT DEVICE AND PREPARATION METHOD THEREOF

REVERSE BLOCKING INSULATED-GATE BIPOLAR TRANSISTOR

POWER SEMICONDUCTOR DEVICE INCLUDING A DIODE AREA

SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

VERTICAL SEMICONDUCTOR STRUCTURE WITH INTEGRATED SAMPLING STRUCTURE...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Power Semiconductor Device and Method of Producing a Power Semicond...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

VERTICAL POWER DEVICES HAVING MESAS AND ETCHED TRENCHES THEREBETWEEN

Vertical Power Semiconductor Device and Manufacturing Method

INSULATED GATE BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING SAME

MANUFACTURING PROCESS OF A VERTICAL-CHANNEL SEMICONDUCTOR DEVICE AN...

WIDE BAND GAP SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SUPPORT SHIELD STRUCTURES FOR TRENCHED SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE HAVING MACRO CELLS

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

REVERSE-CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND METHOD OF...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

IGBT DEVICE BACKSIDE STRUCTURE AND PREPARATION METHOD THEREFOR, AND...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREOF, A...

BACKSIDE WAFER DOPANT ACTIVATION

BACKSIDE WAFER DOPANT ACTIVATION