The invention relates to surface preparation, cleaning, rinsing and drying of semiconductor wafers and similar workpieces. In the processing of wafers, it is often necessary to apply a fluid onto the wafer in either liquid, vapor or gaseous form. Such fluids are used to, for example, etch the wafer surface, clean the wafer surface, dry the wafer surface, passivate the wafer surface, deposit films on the wafer surface, etc. The wafers are often loaded into a rotor within a process chamber, for processing. By spinning the wafers in the rotor, fluids can more evenly be applied to the wafers. Spinning can also help in drying the wafers, with the centrifugal forces generated by spinning flinging liquid off of the wafers.
More recently, processing with ozone has been used instead of using acids and caustics. While ozone is toxic and corrosive, it is much more easily handled in comparison to the conventional acids and caustics. In addition, it can be easily converted to oxygen, so that it can be disposed of with less environmental affect. In use, ozone is introduced into a process chamber as a dry gas, or mixed with a liquid or another gas or steam, or both. For some processing steps, having a high ozone concentration in the chamber is advantageous. The ozone is advantageously confined or sealed within the process chamber. However, since the rotor shaft which supports the rotor passes out of the chamber, sealing the chamber presents special engineering challenges.
A new workpiece processing system having an improved gas pressure seal has now been invented. The system offers better performance and reliability, resulting from the new gas pressure seal design. In new workpiece processing methods, the flow of gas through the gas pressure seal is controlled to avoid diluting process gases in the process chamber. Accordingly, processing of workpieces can be achieved more quickly and more consistently.
In one aspect, the new system includes a rotor for holding workpieces. within the process chamber. A shaft supports the rotor for rotation within the process chamber. The new gas pressure seal around the shaft includes a shaft adapter, with a shaft o-ring or other seal element providing a seal between the shaft and the shaft adapter. A separate front o-ring or other seal element provides a seal between the shaft adapter and the rotor. A motor ring around the shaft adapter is spaced apart from the shaft adapter to form an annular gas flow path between them. The seal elements improve the sealing effectiveness of the new gas pressure seal.
In another aspect, a retainer ring is attached to the motor ring and sealed against the motor ring by a motor ring o-ring or seal element. A seal ring is optionally attached to the retainer ring, with the seal ring projecting into a groove on the back surface of the rotor. A gas inlet and a gas outlet in the motor ring provide a gas flow passageway through the motor ring to ring grooves on an outer surface of the shaft adapter.
In another aspect, threads or ridges are provided on the shaft adapter, with the motor ring surrounding the ridges to create a labyrinth flow path through the seal.
Other features and advantages of the invention will be apparent to persons knowledgeable in this technology, from the following description taken together with the accompanying drawings. While the drawings show a single embodiment of the invention, various changes, modifications and substitutions can of course be made within the scope of the invention. The invention resides as well in sub-combinations of the features described and in the individual components.
In the drawings, wherein the same reference number denotes the same element throughout the several views:
The terms workpiece, wafer, or semiconductor wafer, as used here, mean any flat media, including semiconductor wafers and other substrates or wafers, glass, mask, and memory media, MEMS substrates, flat panel displays, rigid disk or optical media, thin film heads, or any other substrate on which micro-electronic, micro-mechanical, or micro electro-mechanical devices may be formed. These and similar articles are collectively referred to here as a “wafer” or “workpiece”.
Turning now in detail to the drawings, as shown in
A second or middle section 14 includes a processing chamber assembly 20, as illustrated in
The second section 14 further includes a door 64, shown in
The processing chamber 22 may be oriented horizontally but is preferably inclined upwardly at an angle of, for example, 5-30°, and preferably about 10°, so that the front end 24 of the processing chamber 22 is at a higher elevation than the back end 26 of the processing chamber 22. Examples of such a processing chamber 22 and chamber assembly 20 are described in U.S. Pat. No. 6,418,945, incorporated by reference.
A rotor 40, as illustrated in
Depending upon the chemicals to be used in the processing system 10, the rotor 40 and the processing chamber 22, as well as other components exposed to the chemicals, may be made of stainless steel, or alternatively the rotor and processing chamber material may be Teflon® (i.e., fluorine containing resins), or another suitable material. In a preferred embodiment, harsh chemicals, such as acids and solvents (e.g., HF, HCl, H2SO4, and H2O2), are not used in the processing system 10, so that a stainless steel processing chamber 22 and rotor 40 may be used, and so that any negative impact on the environment is substantially minimized.
As illustrated in
The processing chamber 22 may further include various other components to enhance processing of the workpieces 55. For example, as shown in
The third section 16 preferably serves as a process fluid storage compartment. For uses involving ozone gas, an ozone generator 70 is connected with the processing chamber 22 for providing ozone gas into the processing chamber 22. In general the ozone generator 70 is connected to a gas spray manifold 61 in the processing chamber 22 via one or more ozone delivery lines (not shown). Since some processing steps use large amounts of ozone, the ozone generator 70 is advantageously a high capacity ozone generator that can generate at least 90 g/hour of ozone. If needed, separate cooling water lines may be routed to the ozone generator.
A de-ionized (DI) water supply supplies water to spray nozzles 61 in the processing chamber 22. The DI water may be supplied from a DI water reservoir located within the system 10, or may be supplied from an external source via one or more fluid delivery lines. One or more heaters 53, if used, heat the DI water before it enters the processing chamber 22.
The lower section 16 may contain additional processing fluid supplies, such as an ammonium hydroxide (NH4OH) supply, a purge gas and/or drying gas source (e.g., N2 gas generator), a compressed dry air (CDA) source, and/or any other suitable processing fluid supplies. These fluid supplies, if used, connect with nozzles, ports, or other application in the processing chamber 22, via one or more fluid delivery lines. The system 10 typically will include pumps, filters, and/or other components for effectively providing the processing fluids and/or gases into the processing chamber 22. Alarms, sensors, and other monitoring devices to detect processing fluid levels in the processing chamber, may also be included. While the system 10 is described here as having the three sections, and with each of the sections containing specified components, separate sections are not needed. The various components also need not be located in any particular section or module. In addition, the system 10 may also be designed as a single module or section, or with 2, 3 or more modules or sections.
Referring now to
Turning now to
The shaft adapter 110 is spaced apart slightly from the motor ring 112 by an annular gap AG (shown magnified in
Referring now to
In use, workpieces 55 are loaded into the rotor 40. In the manually loaded system shown in
The system 10 can of course be used to perform various process steps, using various other liquids and gasses. In one ozone process, heated DI water (provided by a heater 43 in the system or separately supplied) is sprayed into the processing chamber 22. The DI water is preferably heated to a temperature of 30 to 110° C., more preferably 40 or 50 or 60-90° C. The heated water forms a thin layer on the spinning wafers. The ozone diffuses through the heated boundary layer and/or moves via bulk transport to react at the surface of the workpiece, as described in U.S. Pat. No. 6,267,125, and U.S. Pat. No. 6,497,768, incorporated by reference.
As shown in
After the nitrogen passes through the shaft inlets 150 and comes to the center or v-groove 152, the flow of nitrogen splits. A first stream of nitrogen flows rearwardly over and around the grooves 136. A second stream of nitrogen flows forwardly in the annular gap between the shaft adapter 110 and the motor ring 112, over the ridges or threads 132. Since the gas pressure of the nitrogen is maintained higher than the pressure of the process gas in the chamber 22, the second stream of nitrogen flows forwardly through the gap AG, and into the process, chamber. This forward flow of nitrogen prevents process gases from passing through the seal 100, as they cannot flow or travel upstream against the nitrogen gas flowing in the opposite direction. Consequently, the process gasses and/or liquids are sealed within the chamber.
The second or rearward flow of nitrogen moves rearwardly out of the seal and into the collection space 160 behind the shaft adapter 110. Nitrogen in the collection space 160 then flows out to a system vent through the outlet 144. An aspirator or vacuum source 162 may be used to assist the flow of nitrogen through the seal, and to help to control or limit ingress of nitrogen into the chamber. The flow of nitrogen, as described above, seals the process gases within the process chamber 22. Process liquids, and vapors of process liquids, are similarly sealed within the chamber 22.
During certain processing steps, it is advantageous to have a high concentration of ozone gas in the chamber 22. Ozone gas in the chamber 22 can be diluted by the nitrogen gas used in the seal 100. Specifically, the nitrogen flowing through the seal 100 and into the chamber 22 can dilute the ozone gas in the chamber, especially near the back of the chamber, adjacent to the seal 100 where the nitrogen enters. To reduce or avoid dilution of the ozone (or other process gas or vapor in the chamber 22), the flow rate of nitrogen through the seal 100 can be temporarily reduced.
Typical flow rates of nitrogen into the seal 100 range from 10-30 liters/minute. These flow rates will of course vary depending on the specific seal design. By temporarily reducing this gas flow rate, at the times when a high ozone concentration is desired in the chamber 22, dilution can be largely avoided. The reduced flow rate is selected based on balancing the amount of dilution acceptable against the amount of reduction in sealing effectiveness of the seal 100 running at a reduced nitrogen flow. At full nitrogen flow of e.g., 15-25 liters/minute, there is significant potential for dilution of the process gas in the chamber 22. However, the potential for leakage of process gas past the seal is negligible at these flow rates of nitrogen. At the other extreme, if the flow rate of nitrogen to the seal 100 is stopped completely, there is no potential for dilution of the process gas in the chamber 22. However, the potential for leakage of process gas past the seal in significantly greater.
Preferably, to reduce dilution of the ozone or process gas in the chamber 22, the flow rate of nitrogen to the seal is reduced to from %5 to %20, %30, %40 or %50 of the normal flow used when dilution of process gas is not a concern. Typically, the flow will be reduced to %5-%20 or about %8-%12 of normal, although these percentages will vary with different seal designs. Of course, any reduction at all from the normal flow of nitrogen can be helpful in reducing dilution of the process gas. The corresponding loss in the effectiveness of the seal 100 resulting from reducing the nitrogen flow through the seal 100 is acceptable since it is only temporary and occurs only over short intervals of time. Consequently, the cumulative amount of process gas leakage past the seal 100 resulting from reducing the flow of nitrogen, is low. In addition, any process gas leaking out of the chamber 22 necessarily flows in the annular gap between the shaft adapter 110 and the motor ring 112, and into the collection space 160. Gas in the collection space 160 is evacuated via the gas outlet 144, and from there may optionally be routed to the ozone destructor. 45 or other exhaust gas handling equipment. Accordingly, no process gas is released out of the system 10.
After the cleaning and/or stripping steps are performed, the workpieces 55 are typically rinsed using DI water that is sprayed from the manifolds 60, and then dried with a drying gas, such as N2 gas. A purge gas, such as N2 gas, may be used between the rinsing and drying steps, or between other processing steps, to remove excess fluids from the processing chamber. Exhaust vapors and gases flow out of the chamber through the exhaust port 62 and into the ozone destructor 45. Ozone in the ozone destructor is converted in oxygen gas which flows out of the system enclosure via an exhaust gas duct 63, along with other exhaust gases or vapors, such as exhaust from the vent 62. The various processing steps may be repeated one or more times to enhance the cleaning or stripping processes, as desired.
The processing system 10 and methods described herein may be used in several different workpiece-processing applications, such as the following: (1) post-ash cleaning; (2) photoresist stripping; (3) organic material cleaning (4) photo reworking/reclaiming; (5) post-etch cleaning; and any other suitable processing applications.
While embodiments and applications of the present invention have been shown and described, it will be apparent to one skilled in the art that other modifications are possible without departing from the inventive concepts herein. The invention, therefore, is not to be restricted except by the following claims and their equivalents.