The present invention relates to a method, system and mask for processing a thin-film semiconductor material, and more particularly to forming large-grained, grain-shaped and grain-boundary-location controlled semiconductor thin films from amorphous or polycrystalline thin films on a substrate by single-scanning the entire sample or at least one portion thereof using a sequential lateral solidification technique so as to promote a bi-directional growth of the grains in the resolidifying melted sample or in the portion(s) thereof.
In the field of semiconductor processing, there have been several attempts to use lasers to convert thin amorphous silicon films into polycrystalline films. For example, in James Im et al., “Crystalline Si Films for Integrated Active-Matrix Liquid-Crystal Displays,” 11 MRS Bulletin 39 (1996 ) an overview of conventional excimer laser annealing technology is described. In such conventional system, an excimer laser beam is shaped into a beam having an elongated cross-section which is typically up to 30 cm long and 500 micrometers or greater in width. The shaped beam is stepped over a sample of amorphous silicon (i.e., by translating the sample) to facilitate melting thereof and to effectuate the formation of grain-shape and grain boundary-controlled polycrystalline silicon upon the re-solidification of the sample. Such techniques has been referred to a sequential lateral solidification (“SLS”) of the melted portions of the sample to effectuate the growth of longer grain boundaries therein so as to achieve, e.g., uniformity among other thing.
Various techniques processes, masks and samples have been previously described which utilize various SLS techniques, to effectively process the sample. For example, International Publication No. 02/086954 describes a method and system for providing a single-scan, continuous motion sequential lateral solidification of melted sections of the sample being irradiated by beam pulses. In this publication, an accelerated sequential lateral solidification of the polycrystalline thin film semiconductors provided on a simple and continuous motion translation of the semiconductor film are achieved, without the necessity of “microtranslating” the thin film, and re-irradiating the previously irradiated region in the direction which is the same as the direction of the initial irradiation of the thin film while the sample is being continuously translated.
One of the objects of the present invention is to increase the grain size of the melted and re-solidified SLS processed samples and/or portions thereof via limited irradiation of such portions and/or sample for obtaining a desired grain length.
An object of the present invention is to provide techniques for producing large-grained and grain-shape and grain-boundary, location controlled polycrystalline thin film semiconductors using a sequential lateral solidification (“SLS”) process, and to generate such silicon thin films in an accelerated manner by growing the grains bi-directionally within the re-solidifying areas.
This and other objects can be achieved with an exemplary embodiment of a method and system for processing at least one portion of a thin film sample on a substrate, with such portion of the film sample having a first boundary and a second boundary. In particular, an irradiation beam generator emits successive irradiation beam pulses at a predetermined repetition rate. Each of the irradiation beam pulses is masked to define one or more first beamlets and one or more second beamlets. The film sample is continuously scanned at a constant predetermined speed. In addition, one or more first areas of the film sample are successively irradiated by the first beamlets so that the first areas are melted throughout their thickness, wherein each one of the first areas irradiated by the first beamlets of each of the irradiation beam pulses is allowed to re-solidify and crystallize thereby having grains grown therein. Thereafter, one or more second areas of the film sample are successively irradiated by the second beamlets of the irradiation beam pulses so that the second areas are melted throughout their thickness. At least two of the second areas partially overlap a particular area of the re-solidified and crystallized first areas such that the grains provided in the particular area grow into each of the two of the second areas upon a re-solidification thereof. Further at least one of the two of the second areas overlaps a grain boundary provided within the particular area.
Exemplary embodiments of the present invention will now be described in further detail with reference to the accompanying drawings in which:
Certain systems and methods for providing a single scan, continuous motion SLS are described in International Publication No. 02/086954 (the “'954 Publication”), the entire disclosure of which is incorporated herein by reference. The '954 Publication explicitly describes and illustrates the details of these systems and methods, and their utilization of microtranslations of a sample, which may have an amorphous silicon thin film provided thereon that can be irradiated by irradiation beam pulses so as to promote the sequential lateral solidification on the thin film, without the need to microtranslate the sample and/or the beam relative to one another to obtain a desired length of the grains contained in the irradiated and re-solidified areas of the sample. Similar to the system described in the '954 Publication, an exemplary embodiment of a system for carrying out the continuous motion SLS processing of amorphous silicon thin films according to the present invention is illustrated in
The sample translation stage 180 may be controlled by the computer 106 to effectuate translations of the sample 40 in the planar X-Y directions and the Z direction. In this manner, the computer 106 controls the relative position of the sample 40 with respect to the irradiation beam pulse 164. The repetition and the energy density of the irradiation beam pulse 164 may also be controlled by the computer 106. It should be understood by those skilled in the art that instead of the pulsed excimer laser 110, the irradiation beam pulse can be generated by another known source of short energy pulses suitable for melting a semiconductor (or silicon) thin film. Such known source can be a pulsed solid state laser, a chopped continuous wave laser, a pulsed electron beam and a pulsed ion beam, etc. with appropriate modifications to the radiation beam path from the source 110 to the sample 170. In the exemplary embodiment of the system shown in
An amorphous silicon thin film sample may be processed into a single or polycrystalline silicon thin film by generating a plurality of excimer laser pulses of a predetermined fluence, controllably modulating the fluence of the excimer laser pulses, homogenizing the intensity profile of the laser pulse plane, masking each homogenized laser pulses to define beamlets, irradiating the amorphous silicon thin film sample with the beamlets to effect melting of portions thereof that were irradiated by the beamlets, and controllably and continuously translating the sample 170 with respect to the patterned beamlets. The output of the beamlets is controllably modulated to thereby process the amorphous silicon thin film provided on the sample 170 into a single or grain-shape, grain-boundary-location controlled polycrystalline silicon thin film by the continuous motion sequential translation of the sample relative to the beamlets, and the irradiation of the sample by the beamlets of masked irradiation pulses of varying fluence at corresponding sequential locations thereon. One of the advantages of the system, method and mask according to the present invention is that there is a significant saving of processing time to irradiate and promote the SLS on the silicon thin film of the sample by completing the irradiation of a section of the sample 170 without requiring microtranslation of the sample (i.e., the microtranslations as described in the '954 Publication), as well as simultaneously allowing the grain growth to be effectuated in two directions, e.g., two opposite directions.
In this exemplary embodiment, the second slit 211 of the first set of slits is provided adjacent to the first slit 201 at an offset thereof (along the positive X-direction). A middle longitudinal extension 202 of the first slit 201 is provided on a longitudinal level 213 of the second slit 211 that is slightly below a top edge of this slit 211.
The third slit 221 and the fourth slit 226 are arranged longitudinally parallel to one another, at an exemplary offset of 1.25 μm from each other. These third and fourth slits 221, 226 are provided at a horizontal offset from the second slit 211, in the positive X-direction. A longitudinal extension 228 of the fourth slit 226 is provided on a middle longitudinal level 212 of the second slit 211, which is slightly below a top edge of the fourth slit 226. A middle longitudinal extension 222 of the third slit 221 is provided approximately 4.0 μm from the top edge of the fourth slit 226.
The fifth and sixth slits 231, 236 are arranged longitudinally parallel to one another, but at a distance that is greater than the distance between the third and fourth slits 221, 226. In particular, a longitudinal extension 233 of the fifth slit 231 is provided along the extension of the bottom edge of the third slit 221, and a longitudinal extension 238 of the sixth slit 236 is provided along the extension of the top edge of the fourth slit 226. In this manner, the bottom edge of the fifth slit 231 longitudinally extends (along the Y-direction) between the longitudinal extension 223 and the middle extension 222 of the third slit 221. Also, the top edge of the sixth slit 236 longitudinally extends (again along the Y-direction) between the longitudinal extension 228 and the middle extension 227 of the fourth slit 226.
The seventh and eighth slits 241, 246 are arranged even further from one another than the relative positioning of the fifth and sixth slits 231, 236, but in a similar manner with respect to these fifth and sixth slits 231, 236 (as they are associated with the third and fourth slits 221, 226. The similar positioning description applies to the ninth and tenth slits 251, 256, then to eleventh and twelfth slits 261, 266, and finally to thirteenth and fourteenth slits 271, 281 of the first set of slits provided in the first conceptual row 200 of the mask 170.
The second set of slits provided in the second conceptual row 300 of the mask 150, as well as the slits provided in the third and fourth conceptual rows 400, 500 are arranged in a substantially similar manner, with respect to one another, as described above for the slits provided in the first conceptual row 200. Thus, using the exemplary embodiment of the method shown in
Turning first to
As shown in
As shown in
Then, the melted portions 611, 711, 811 begin to resolidify, and the grain growth thereof occurs substantially the same as that of the portions 601, 701, 801. The melted portions 616, 716, 816 also begin to resolidify. The grain growth from the bottom edges thereof occurs in a substantially the same manner as that of the portions 611, 711, 811. However, because the top edge of each of the portions 616, 716, 816 overlaps the middle longitudinal extensions of the re-solidified portions 602, 702, 802, respectively, the grains prevalent above these middle extensions in the re-solidified portions 602, 702, 802 seed the melted and resolidifying portions 616, 716, 816 from the top edges thereof and grow toward the center of each of the respective portions 616, 716, 816. In this manner, the grains grown in the re-solidified portions 602, 702, 802 extend into the resolidifying portions 616, 716 and 816, respectively.
As shown in
In particular, the bottom edges of the third melted portions 623, 723, 823 are provided slightly below the top edge of the respective re-solidified portions 602, 702, 802. Also, the top edge of the respective melted fourth portions 624, 724, 824 are provided slightly above middle longitudinal extensions of the respective previously re-solidified portions 602, 702, 802 that correspond to middle extensions 202, 302, 402 of the respective second slits 211, 311, etc. In addition, the left edges of each of the portions 623, 624, 723, 724, 823, 824 can either abut or overlap the right edge of each of the corresponding re-solidified portions 602, 702, 802.
Then, the melted portions 621-622, 721-722, 821-822 begin to resolidify, and the grain growth thereof occurs in substantially the same manner as that of the portions 611, 616, 711, 716, 811, 816. In addition, the seeds in the previously solidified portion 602 seeds the grains to grow into the third portion 623 and fourth portion 624. In particular, the grains of the portion 602 grow into the third portion 623 from the bottom edge thereof, and into the fourth portion 624 from the top edge thereof. The melted portions 616, 716, 816 also begin to resolidify. Indeed, because the top edge of each of the portions 624, 724, 824 overlaps the middle longitudinal extensions of the previously re-solidified portions 602, 702, 802, respectively, the grains prevalent above these middle extensions in the re-solidified portions 602, 702, 802 seed the melted and resolidifying fourth portions 624, 724, 824 from the top edges thereof and grow toward the center of each of the respective portions 624, 724, 824. Thus, the grains from the bottom edge of the fourth portions 624, 724, 824 and those from the top edges thereof (i.e., from the previously-solidified portions 602, 702, 802, respectively) grow toward the center of each of the respective fourth portions 624, 724, 824. In addition, the grains from the top edge of the third portions 623, 723, 823 and those from the bottom edges thereof (i.e., from the previously-solidified portions 602, 702, 802, respectively) also grow toward the center of each of the respective third portions 623, 723, 823. In this manner, the grains grown in the re-solidified portions 602, 702, 802 extend into the resolidifying portions 616, 716 and 816, respectively.
The enlarged view of a section of the portions of the second conceptual row 350 of the sample 170 that re-solidified from the melted portions 721-724 is illustrated in
Then, as shown in
In particular, the bottom edges of the fifth melted portions 635, 735, 835 are provided slightly below the respective boundaries between the re-solidified portions 605-605′, 705-705′, 805-805′. The top edges of the sixth melted portions 636, 736, 836 are provided slightly above the respective boundaries between the re-solidified portions 605-605″, 705-705″, 805-805″.
The enlarged view of a section of the portions of the second conceptual row 350 of the sample 170 that re-solidified from the melted portions 731-736 is illustrated in
This exemplary procedure according to the present invention continues as shown in
LG≈2(NS)×DMS,
Where LG is the length of the particular grain, NS is the number of shots affecting such particular grain, and DMS is the distance from one step to the next (i.e., microstep).
It should be understood that it is possible to obtain such longer grain growth using the exemplary procedure according to the present not only for the entire sample 170, but also for selective portions thereof. Indeed, the computer 100 can be programmed such that it controls the translations stage 180 to translate the sample 170 in a predetermined manner such that only the pre-selected sections of the sample 170 are irradiated. In fact, it is possible to process not only conceptual rows of the sample, but also column, regular shaped sections and irregular-shaped section. Thus, it is possible for the computer to also control the triggering of the beam pulse to be performed when the sample 170 is translated to a predetermined position for irradiation. In addition, it is possible to utilize dot-shaped patterns in the mask 150 so as to generate such-shaped intensity patterns to irradiate the selected sections of the sample 170. These patterns in the mask 170, as well as other possible patterns that can be used for obtaining bi-directional grain growth according to the continuous motion SLS procedure described above are shown and described in U.S. Pat. No. 6,555,449, the entire disclosure of which is incorporated herein by reference.
Referring next to
In step 1027, the sample 170 is positioned to point the masked irradiated beam pulse 164 at the conceptual rows 250, 350, 450 of the sample 170. In step 1030, the sample 170 is irradiated using the radiation beam pulse 164 having an intensity pattern controlled by the mask 150. In this manner, the grains in each of the conceptual rows 250, 350, 450 are grown in a bi-directional manner. In step 1035, the sample 170 is continuously translated so that the masked irradiated beam pulse 164 continuously irradiates the thin film of the sample 170 in a predetermined direction, and pursuant to the exemplary procedure described above with reference
In step 1045, it is determined whether the sample 170 (or desired portions thereof) has been subjected to the above-described SLS processing. If not, the sample 170 is translated such that the unirradiated desired area or the sample 170 can be irradiated and processed according to the present invention, and the process loops back to step 1030 for further processing. If such SLS processing has been completed for the sample 170 or desired sections thereof, the hardware components and the beam of the system shown in
The foregoing exemplary embodiments merely illustrate the principles of the present invention. Various modifications and alterations to the described embodiments will be apparent to those skilled in the art in view of the teachings herein without departing from the scope of the invention, as defined by the appended claims.
This application is a continuation of International Application Serial No. PCT/US04/030328, filed Sep. 16, 2004, published Mar. 31, 2005, which claims priority from U.S. Provisional Application Serial No. 60/503,420, filed Sep. 16, 2003, each of which are incorporated by reference in their entireties herein, and from which priority is claimed.
Number | Name | Date | Kind |
---|---|---|---|
3632205 | Marcy | Jan 1972 | A |
4187126 | Radd et al. | Feb 1980 | A |
4234358 | Celler et al. | Nov 1980 | A |
4309225 | Fan et al. | Jan 1982 | A |
4382658 | Shields et al. | May 1983 | A |
4456371 | Lin | Jun 1984 | A |
4514895 | Nishimura | May 1985 | A |
4639277 | Hawkins | Jan 1987 | A |
4691983 | Kobayashi et al. | Sep 1987 | A |
4727047 | Bolzer et al. | Feb 1988 | A |
4758533 | Magee et al. | Jul 1988 | A |
4793694 | Liu | Dec 1988 | A |
4800179 | Mukai | Jan 1989 | A |
4855014 | Kakimoto et al. | Aug 1989 | A |
4870031 | Suguhara et al. | Sep 1989 | A |
4940505 | Schachameyer et al. | Jul 1990 | A |
4970546 | Suzuki et al. | Nov 1990 | A |
4976809 | Broadbent | Dec 1990 | A |
4977104 | Sawada et al. | Dec 1990 | A |
5032233 | Yu et al. | Jul 1991 | A |
5061655 | Ipposhi et al. | Oct 1991 | A |
5076667 | Stewart et al. | Dec 1991 | A |
RE33836 | Resor, III et al. | Mar 1992 | E |
5145808 | Sameshima et al. | Sep 1992 | A |
5173441 | Yu et al. | Dec 1992 | A |
5204659 | Sarma | Apr 1993 | A |
5233207 | Anzai | Aug 1993 | A |
5247375 | Mochizuki et al. | Sep 1993 | A |
5281840 | Sarma | Jan 1994 | A |
5285236 | Jain | Feb 1994 | A |
5291240 | Jain | Mar 1994 | A |
5294811 | Aoyama et al. | Mar 1994 | A |
5304357 | Sato et al. | Apr 1994 | A |
5338959 | Kim et al. | Aug 1994 | A |
5373803 | Noguchi et al. | Dec 1994 | A |
5395481 | McCarthy | Mar 1995 | A |
5409867 | Asano | Apr 1995 | A |
5413958 | Imahashi et al. | May 1995 | A |
5417897 | Asakawa et al. | May 1995 | A |
5432122 | Chae | Jul 1995 | A |
5436095 | Mizuno et al. | Jul 1995 | A |
5453594 | Konecny | Sep 1995 | A |
5456763 | Kaschmitter et al. | Oct 1995 | A |
5466908 | Hosoya et al. | Nov 1995 | A |
5496768 | Kudo | Mar 1996 | A |
5512494 | Tanabe | Apr 1996 | A |
5523193 | Nelson | Jun 1996 | A |
5529951 | Noguchi et al. | Jun 1996 | A |
5534716 | Takemura | Jul 1996 | A |
5591668 | Maegawa et al. | Jan 1997 | A |
5614421 | Yang | Mar 1997 | A |
5614426 | Funada et al. | Mar 1997 | A |
5616506 | Takemura | Apr 1997 | A |
5620910 | Teramoto | Apr 1997 | A |
5643801 | Ishihara et al. | Jul 1997 | A |
5663579 | Noguchi | Sep 1997 | A |
5683935 | Miyamoto et al. | Nov 1997 | A |
5696388 | Funada et al. | Dec 1997 | A |
5710050 | Makita et al. | Jan 1998 | A |
5721606 | Jain | Feb 1998 | A |
5736709 | Neiheisel | Apr 1998 | A |
5742426 | York | Apr 1998 | A |
5756364 | Tanaka et al. | May 1998 | A |
5766989 | Maegawa et al. | Jun 1998 | A |
5767003 | Noguchi | Jun 1998 | A |
5817548 | Noguchi et al. | Oct 1998 | A |
5844588 | Anderson | Dec 1998 | A |
5858807 | Kawamura | Jan 1999 | A |
5861991 | Fork | Jan 1999 | A |
5893990 | Tanaka | Apr 1999 | A |
5948291 | Neylan et al. | Sep 1999 | A |
5960323 | Wakita | Sep 1999 | A |
5981974 | Makita | Nov 1999 | A |
5986807 | Fork | Nov 1999 | A |
6002523 | Tanaka | Dec 1999 | A |
6014944 | Russell et al. | Jan 2000 | A |
6020224 | Shimogaichi et al. | Feb 2000 | A |
6045980 | Edelkind et al. | Apr 2000 | A |
6072631 | Guenther et al. | Jun 2000 | A |
6081381 | Shalapenok et al. | Jun 2000 | A |
6093934 | Yamazaki et al. | Jul 2000 | A |
6117301 | Freudenberger et al. | Sep 2000 | A |
6117752 | Suzuki | Sep 2000 | A |
6120976 | Treadwell et al. | Sep 2000 | A |
6130009 | Smith et al. | Oct 2000 | A |
6130455 | Yoshinouchi | Oct 2000 | A |
6136632 | Higashi | Oct 2000 | A |
6156997 | Yamazaki et al. | Dec 2000 | A |
6162711 | Ma et al. | Dec 2000 | A |
6169014 | McCulloch | Jan 2001 | B1 |
6172820 | Kuwahara | Jan 2001 | B1 |
6176922 | Aklufi et al. | Jan 2001 | B1 |
6177301 | Jung | Jan 2001 | B1 |
6184490 | Schweizer | Feb 2001 | B1 |
6187088 | Okumura | Feb 2001 | B1 |
6190985 | Buynoski | Feb 2001 | B1 |
6193796 | Yang | Feb 2001 | B1 |
6198141 | Yamazaki et al. | Mar 2001 | B1 |
6203952 | O'Brien et al. | Mar 2001 | B1 |
6222195 | Yamada et al. | Apr 2001 | B1 |
6235614 | Yang | May 2001 | B1 |
6242291 | Kusumoto et al. | Jun 2001 | B1 |
6255146 | Shimizu et al. | Jul 2001 | B1 |
6274488 | Talwar et al. | Aug 2001 | B1 |
6285001 | Fleming et al. | Sep 2001 | B1 |
6300175 | Moon | Oct 2001 | B1 |
6313435 | Shoemaker et al. | Nov 2001 | B1 |
6316338 | Jung | Nov 2001 | B1 |
6320227 | Lee et al. | Nov 2001 | B1 |
6322625 | Im | Nov 2001 | B2 |
6326286 | Park et al. | Dec 2001 | B1 |
6333232 | Kunikiyo | Dec 2001 | B1 |
6341042 | Matsunaka et al. | Jan 2002 | B1 |
6348990 | Igasaki et al. | Feb 2002 | B1 |
6353218 | Yamazaki et al. | Mar 2002 | B1 |
6358784 | Zhang et al. | Mar 2002 | B1 |
6368945 | Im | Apr 2002 | B1 |
6388146 | Onishi et al. | May 2002 | B1 |
6388386 | Kunii et al. | May 2002 | B1 |
6392810 | Tanaka | May 2002 | B1 |
6393042 | Tanaka | May 2002 | B1 |
6407012 | Miyasaka et al. | Jun 2002 | B1 |
6410373 | Chang et al. | Jun 2002 | B1 |
6429100 | Yoneda | Aug 2002 | B2 |
6432758 | Cheng et al. | Aug 2002 | B1 |
6437284 | Okamoto et al. | Aug 2002 | B1 |
6444506 | Kusumoto et al. | Sep 2002 | B1 |
6445359 | Ho | Sep 2002 | B1 |
6448612 | Miyazaki et al. | Sep 2002 | B1 |
6451631 | Grigoropoulos et al. | Sep 2002 | B1 |
6455359 | Yamazaki et al. | Sep 2002 | B1 |
6468845 | Nakajima et al. | Oct 2002 | B1 |
6471772 | Tanaka | Oct 2002 | B1 |
6472684 | Yamazaki et al. | Oct 2002 | B1 |
6476447 | Yamazaki et al. | Nov 2002 | B1 |
6479837 | Ogawa et al. | Nov 2002 | B1 |
6482722 | Kunii et al. | Nov 2002 | B2 |
6493042 | Bozdagi et al. | Dec 2002 | B1 |
6495067 | Ono | Dec 2002 | B1 |
6495405 | Voutsas et al. | Dec 2002 | B2 |
6501095 | Yamaguchi et al. | Dec 2002 | B2 |
6504175 | Mei et al. | Jan 2003 | B1 |
6506636 | Yamazaki et al. | Jan 2003 | B2 |
6511718 | Paz de Araujo et al. | Jan 2003 | B1 |
6512634 | Tanaka | Jan 2003 | B2 |
6516009 | Tanaka | Feb 2003 | B1 |
6521473 | Jung | Feb 2003 | B1 |
6521492 | Miyasaka et al. | Feb 2003 | B2 |
6526585 | Hill | Mar 2003 | B1 |
6528359 | Kusumoto et al. | Mar 2003 | B2 |
6531681 | Markle et al. | Mar 2003 | B1 |
6535535 | Yamazaki et al. | Mar 2003 | B1 |
6555422 | Yamazaki et al. | Apr 2003 | B1 |
6555449 | Im et al. | Apr 2003 | B1 |
6562701 | Ishida et al. | May 2003 | B2 |
6563077 | Im | May 2003 | B2 |
6573163 | Voutsas et al. | Jun 2003 | B2 |
6573531 | Im et al. | Jun 2003 | B1 |
6577380 | Farmiga et al. | Jun 2003 | B1 |
6582827 | Im | Jun 2003 | B1 |
6590228 | Voutsas et al. | Jul 2003 | B2 |
6599790 | Yamazaki et al. | Jul 2003 | B1 |
6608326 | Shinagawa et al. | Aug 2003 | B1 |
6621044 | Jain et al. | Sep 2003 | B2 |
6635554 | Im et al. | Oct 2003 | B1 |
6635932 | Grigoropoulos et al. | Oct 2003 | B2 |
6660575 | Zhang | Dec 2003 | B1 |
6667198 | Shimoto et al. | Dec 2003 | B2 |
6693258 | Sugano et al. | Feb 2004 | B2 |
6734635 | Kunii et al. | May 2004 | B2 |
6741621 | Asano | May 2004 | B2 |
6744069 | Yamazaki et al. | Jun 2004 | B1 |
6746942 | Sakamoto et al. | Jun 2004 | B2 |
6750424 | Tanaka | Jun 2004 | B2 |
6755909 | Jung | Jun 2004 | B2 |
6767804 | Crowder | Jul 2004 | B2 |
6770545 | Yang | Aug 2004 | B2 |
6777276 | Crowder et al. | Aug 2004 | B2 |
6784455 | Maekawa et al. | Aug 2004 | B2 |
6830993 | Im et al. | Dec 2004 | B1 |
6858477 | Deane et al. | Feb 2005 | B2 |
6861328 | Hara et al. | Mar 2005 | B2 |
6908835 | Sposili et al. | Jun 2005 | B2 |
6916690 | Chang | Jul 2005 | B2 |
6961117 | Im | Nov 2005 | B2 |
6962860 | Yamazaki et al. | Nov 2005 | B2 |
7049184 | Tanabe | May 2006 | B2 |
7078281 | Tanaka et al. | Jul 2006 | B2 |
7091411 | Falk et al. | Aug 2006 | B2 |
7119365 | Takafuji et al. | Oct 2006 | B2 |
7144793 | Gosain et al. | Dec 2006 | B2 |
7164152 | Im | Jan 2007 | B2 |
7172952 | Chung | Feb 2007 | B2 |
7183229 | Yamanaka | Feb 2007 | B2 |
7187016 | Arima | Mar 2007 | B2 |
7192479 | Mitani et al. | Mar 2007 | B2 |
7192818 | Lee et al. | Mar 2007 | B1 |
7199397 | Huang et al. | Apr 2007 | B2 |
7217605 | Kawasaki et al. | May 2007 | B2 |
7259081 | Im | Aug 2007 | B2 |
7297982 | Suzuki et al. | Nov 2007 | B2 |
7300858 | Im | Nov 2007 | B2 |
7303980 | Yamazaki et al. | Dec 2007 | B2 |
7311778 | Im et al. | Dec 2007 | B2 |
7318866 | Im | Jan 2008 | B2 |
7319056 | Im et al. | Jan 2008 | B2 |
7326876 | Jung | Feb 2008 | B2 |
7341928 | Im | Mar 2008 | B2 |
7384476 | You | Jun 2008 | B2 |
7507645 | You | Mar 2009 | B2 |
7560321 | Kato et al. | Jul 2009 | B2 |
7645337 | Im et al. | Jan 2010 | B2 |
7700462 | Tanaka et al. | Apr 2010 | B2 |
7804647 | Mitani et al. | Sep 2010 | B2 |
20010001745 | Im et al. | May 2001 | A1 |
20010030292 | Brotherton | Oct 2001 | A1 |
20010041426 | Im | Nov 2001 | A1 |
20020083557 | Jung | Jul 2002 | A1 |
20020096680 | Sugano et al. | Jul 2002 | A1 |
20020104750 | Ito | Aug 2002 | A1 |
20020119609 | Hatano et al. | Aug 2002 | A1 |
20020151115 | Nakajima et al. | Oct 2002 | A1 |
20020197778 | Kasahara et al. | Dec 2002 | A1 |
20030000455 | Voutsas | Jan 2003 | A1 |
20030003242 | Voutsas | Jan 2003 | A1 |
20030006221 | Hong et al. | Jan 2003 | A1 |
20030013278 | Jang et al. | Jan 2003 | A1 |
20030014337 | Mathews et al. | Jan 2003 | A1 |
20030022417 | Steele et al. | Jan 2003 | A1 |
20030029212 | Im | Feb 2003 | A1 |
20030057418 | Asano | Mar 2003 | A1 |
20030068836 | Hongo et al. | Apr 2003 | A1 |
20030089907 | Yamaguchi et al. | May 2003 | A1 |
20030096489 | Im et al. | May 2003 | A1 |
20030119286 | Im et al. | Jun 2003 | A1 |
20030148565 | Yamanaka | Aug 2003 | A1 |
20030148594 | Yamazaki et al. | Aug 2003 | A1 |
20030194613 | Voutsas et al. | Oct 2003 | A1 |
20030196589 | Mitani et al. | Oct 2003 | A1 |
20040040938 | Yamazaki et al. | Mar 2004 | A1 |
20040041158 | Hongo et al. | Mar 2004 | A1 |
20040053450 | Sposili et al. | Mar 2004 | A1 |
20040061843 | Im | Apr 2004 | A1 |
20040127066 | Jung | Jul 2004 | A1 |
20040140470 | Kawasaki et al. | Jul 2004 | A1 |
20040169176 | Peterson et al. | Sep 2004 | A1 |
20040182838 | Das et al. | Sep 2004 | A1 |
20040222187 | Lin | Nov 2004 | A1 |
20040224487 | Yang | Nov 2004 | A1 |
20050003591 | Takaoka et al. | Jan 2005 | A1 |
20050032249 | Im et al. | Feb 2005 | A1 |
20050034653 | Im et al. | Feb 2005 | A1 |
20050059224 | Im | Mar 2005 | A1 |
20050059265 | Im | Mar 2005 | A1 |
20050112906 | Maekawa et al. | May 2005 | A1 |
20050139830 | Takeda et al. | Jun 2005 | A1 |
20050141580 | Partlo et al. | Jun 2005 | A1 |
20050142450 | Jung | Jun 2005 | A1 |
20050142451 | You | Jun 2005 | A1 |
20050202654 | Im | Sep 2005 | A1 |
20050235903 | Im | Oct 2005 | A1 |
20050236908 | Rivin | Oct 2005 | A1 |
20060030164 | Im | Feb 2006 | A1 |
20060035478 | You | Feb 2006 | A1 |
20060040512 | Im | Feb 2006 | A1 |
20060102901 | Im et al. | May 2006 | A1 |
20060125741 | Tanaka et al. | Jun 2006 | A1 |
20060211183 | Duan et al. | Sep 2006 | A1 |
20060254500 | Im et al. | Nov 2006 | A1 |
20070007242 | Im | Jan 2007 | A1 |
20070010074 | Im | Jan 2007 | A1 |
20070010104 | Im et al. | Jan 2007 | A1 |
20070020942 | Im | Jan 2007 | A1 |
20070032096 | Im | Feb 2007 | A1 |
20070051302 | Gosian et al. | Mar 2007 | A1 |
20070108472 | Jeong et al. | May 2007 | A1 |
20070111349 | Im | May 2007 | A1 |
20070184638 | Kang et al. | Aug 2007 | A1 |
20070215942 | Chen et al. | Sep 2007 | A1 |
20080035863 | Im et al. | Feb 2008 | A1 |
20080124526 | Im | May 2008 | A1 |
20080176414 | Im | Jul 2008 | A1 |
20090001523 | Im | Jan 2009 | A1 |
20090045181 | Im | Feb 2009 | A1 |
20090137105 | Im | May 2009 | A1 |
20090173948 | Im et al. | Jul 2009 | A1 |
20090189164 | Im et al. | Jul 2009 | A1 |
20090218577 | Im | Sep 2009 | A1 |
20090242805 | Im | Oct 2009 | A1 |
20090309104 | Im | Dec 2009 | A1 |
20100024865 | Shah et al. | Feb 2010 | A1 |
20100032586 | Im et al. | Feb 2010 | A1 |
20100065853 | Im | Mar 2010 | A1 |
20100099273 | Im | Apr 2010 | A1 |
20100197147 | Im | Aug 2010 | A1 |
20100233888 | Im | Sep 2010 | A1 |
Number | Date | Country |
---|---|---|
19839718 | Mar 2000 | DE |
10103670 | Aug 2002 | DE |
681316 | Aug 1995 | EP |
655774 | Jul 1996 | EP |
1067593 | Oct 2001 | EP |
2338342 | Dec 1999 | GB |
2338343 | Dec 1999 | GB |
2338597 | Dec 1999 | GB |
S57-027035 | Feb 1982 | JP |
62160781 | Jul 1987 | JP |
62181419 | Aug 1987 | JP |
62216320 | Sep 1987 | JP |
H01-256114 | Oct 1989 | JP |
02081422 | Mar 1990 | JP |
2283036 | Nov 1990 | JP |
04033327 | Feb 1992 | JP |
H04-167419 | Jun 1992 | JP |
4279064 | Oct 1992 | JP |
04282869 | Oct 1992 | JP |
5 041519 | Feb 1993 | JP |
05048190 | Feb 1993 | JP |
06-011729 | Jan 1994 | JP |
6252048 | Sep 1994 | JP |
H06-260502 | Sep 1994 | JP |
6283422 | Oct 1994 | JP |
7176757 | Jul 1995 | JP |
H08-078330 | Mar 1996 | JP |
09007968 | Jan 1997 | JP |
1997-171971 | Jun 1997 | JP |
H09-270393 | Sep 1997 | JP |
9260681 | Oct 1997 | JP |
9321310 | Dec 1997 | JP |
10 189998 | Jul 1998 | JP |
10244390 | Sep 1998 | JP |
11064883 | Mar 1999 | JP |
11281997 | Oct 1999 | JP |
H11-297852 | Oct 1999 | JP |
11330000 | Nov 1999 | JP |
2000-223425 | Aug 2000 | JP |
2000-315652 | Nov 2000 | JP |
2000-346618 | Dec 2000 | JP |
2001023920 | Jan 2001 | JP |
2002-203809 | Jul 2002 | JP |
2002-353142 | Dec 2002 | JP |
2002-353159 | Dec 2002 | JP |
2003-031496 | Jan 2003 | JP |
2003100653 | Apr 2003 | JP |
2003-523723 | Aug 2003 | JP |
2004-031809 | Jan 2004 | JP |
2000-0053428 | Aug 2000 | KR |
464960 | Nov 2001 | TW |
564465 | Dec 2003 | TW |
569350 | Jan 2004 | TW |
9745827 | Dec 1997 | WO |
9824118 | Jun 1998 | WO |
9931719 | Jun 1999 | WO |
0014784 | Mar 2000 | WO |
0118854 | Mar 2001 | WO |
0118855 | Mar 2001 | WO |
0171786 | Sep 2001 | WO |
WO0171791 | Sep 2001 | WO |
WO01071791 | Sep 2001 | WO |
WO 0173769 | Oct 2001 | WO |
WO 0197266 | Dec 2001 | WO |
0231869 | Apr 2002 | WO |
0242847 | May 2002 | WO |
0286954 | May 2002 | WO |
02086955 | Oct 2002 | WO |
03018882 | Mar 2003 | WO |
03046965 | Jun 2003 | WO |
03084688 | Oct 2003 | WO |
2004017379 | Feb 2004 | WO |
2004017380 | Feb 2004 | WO |
2004017381 | Feb 2004 | WO |
2004017382 | Feb 2004 | WO |
2004075263 | Sep 2004 | WO |
WO 2004030328 | Sep 2004 | WO |
WO2005029546 | Mar 2005 | WO |
WO2005029548 | Mar 2005 | WO |
WO 2005029549 | Mar 2005 | WO |
WO2005029550 | Mar 2005 | WO |
WO2005029551 | Mar 2005 | WO |
WO 2006055003 | May 2006 | WO |
Entry |
---|
U.S. Appl. No. 10/308,958, Im et al., filed Dec. 3, 2002. |
U.S. Appl. No. 10/525,283, Im, filed Feb. 16, 2005. |
U.S. Appl. No. 10/525,288, Im, filed Feb. 16, 2005. |
U.S. Appl. No. 10/525,297, Im, filed Feb. 15, 2005. |
U.S. Appl. No. 10/544,498, Im, filed Aug. 3, 2005. |
U.S. Appl. No. 11/370,000, Im, filed Mar. 7, 2006. |
U.S. Appl. No. 11/372,148, Im, filed Mar. 9, 2006. |
U.S. Appl. No. 11/651,305, Im, filed Jan. 9, 2007. |
U.S. Appl. No. 60/253,256, filed Aug. 31,2003, Im. |
Im et al., “Controlled Super-Lateral Growth of Si Films for Microstructural Manipulation and Optimization”, Phys. Stat. Sol. (a), vol. 166, p. 603 (1998). |
S.D. Brotherton et al., “Influence of Melt Depth in Laser Crystallized Poly-Si Thin Film Transistors,” 82 J. Appl. Phys. 4086 (1997). |
J.S. Im et al., “Crystalline Si Films for Integrated Active-Matrix Liquid-Crystals Displays,” 21 MRS Bulletin 39 (1996). |
Im et al., “Single-Crystal Si Films for Thin-Film Transistor Devices,” Appl. Phys. Lett., vol. 70 (25), p. 3434 (1997). |
Sposili et al., “Sequential Lateral Solidification of Thin Silicon Films on SiO2”, Appl, Phys. Lett., vol. 69 (19), p. 2864 (1996). |
Crowder et al., “Low-Temperature Single-Crystal Si TFT's Fabricated on Si Films processed via Sequential Lateral Solidification”, IEEE Electron Device Letter, vol. 19 (8), p. 306 (1998). |
Sposili et al., “Single-Crystal Si Films via a Low-Substrate-Temperature Excimer-Laser Crystallization Method”, Mat. Res. Soc. Symp. Proc. vol. 452, pp. 953-958, 1997 Materials Reasearch Society. |
C. E. Nebel, “Laser Interference Structuring of A-SI:h” Amorphous Silicon Technology—1996, San Francisco, CA Apr. 8-12, 1996, Materials Research Society Symposium Proceedings, vol. 420, Pittsburgh, PA. |
J. H. Jeon et al., “Two-step laser recrystallization of poly-Si for effective control of grain boundaries”, Journal of Non Crystalline Solids, North-Holland Publishing Company, NL, vol. 266-269, May 2000, pp. 645-649. |
H. Endert et al., “Excimer Laser: A New Tool for Precision Micromaching,” 27 Optical and Quantum Electronics, 1319 (1995). |
“Overview of Beam Delivery Systems for Excimer Lasers,” Micro/Las Lasersystem GMBH. 1999. |
K.H. Weiner et al., “Ultrashallow Junction Formation Using Projection Gas Immersion Laser Doping (PGILD),” A Verdant Technologies Technical Brief, Aug. 20, 1997. |
Hau-Riege C.S. et al., “The Effects Microstructural Transitions at Width Transitions on interconnect reliabity,” Journal of Applied Physics, Jun. 15, 2000, vol. 87, No. 12, pp. 8467-8472. |
McWilliams et al., “Wafer-Scale Laser Pantography: Fabrication of N-Metal-Oxide-Semiconductor Transistors and Small-Scale Integrated Circuits by Direct-Write Laser-Induced Pyrolytic Reactions,” Applied Physics Letters, American Institute of Physics, New York, US, vol. 43, No. 10, Nov. 1983, pp. 946-948. |
Mariucci et al., “Grain boundary location control by patterned metal film in excimer laser crystallized polysilicon,” Proceedings of the Figth International COnference on Polycrystalline Semiconductors, Schwabisch Gmund, Germany, Sep. 13-18, 1998, vol. 67-68, pp. 175-180. |
Broadbent et al., “Excimer Laser Processing of Al-1%Cu/TiW Interconnect Layers,” 1989 Proceedings, Sixth International IEEE VLSI Multilevel Interconnection COnference, Santa Clara, CA, Jun. 12-13, 1989, pp. 336-345. |
H.J. Kim and James S. Im, “Grain Boundary Location-Controlled Poly-Si Films for TFT Devices Obtained Via Novel Excimer Laser Process,” Abstracts for Symposium of Materials Research Society, Nov. 27 to Dec. 2, 1994, p. 230. |
S.D. Brotherton, “Polycrystalline Silicon Thin Film Transistors,” 10 Semicond. Sci. Tech., pp. 721-738 (1995). |
H. Watanabe et al., “Crystallization Process of Polycrystalline Silicon by KrF Excimer Laser Annealing,” 33 Japanese J. of Applied Physics Part 1—Regular Papers Short Notes & Review Papers, pp. 4491-4498 (1994). |
E. Fogarassy et al., “Pulsed Laser Crystallization of Hydrogen-Free a-Si Thin Films for High-Mobility Poly-Si TFT Fabrication,” 56 Applied Physics A—Solids and Surfaces, pp. 365-373 (1993). |
Y. Miyata et al, “Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display,” 31 Japanese J. of Applied Physics Part 1—Regular Papers Short Notes & Review Papers, pp. 4559-4562 (1992). |
Im et al., “Phase Transformation Mechanisms Involved in Excimer Laser Crystallization of Amorphous Silicon Films,” Appl. Phys. Lett., vol. 63 (14), p. 1969 (1993). |
Im et al., “On the Super Lateral Growth Phenomenon Observed in Excimer Laser-Induced Crystallization of Thin Si Films,” Appl. Phys. Lett., vol. 64 (17), p. 2303 (1994). |
Brochure from MicroLas Lasersystem, GmbH, “UV Optics Systems for Excimer Laser Based Micromaching and Marking”. 1999. |
Ishida et al., “Ultra-shallow boxlike profiles fabricated by pulsed ultraviolet-laser doping process”, J. Vac. Sci. Technol. B 12(1), p. 399-403, 1994. (No month). |
Yoshimoto, et al., “Excimer-Laser-Produced and Two-Dimensionally Position-Controlled Giant Si Grains on Organic SOG Underlayer”, p. 285-286, AM-LCD 2000. No month. |
Ozawa et al., “Two-Dimensionally Position-Controlled Exicer-Laser-Crystallization of Silicon Thin Films on Glassy Substrate”, Jpn. J. Appl. Phys. vol. 38, Part 1, No. 10, p. 5700-5705, (1999). No month. |
I.W. Boyd, Laser Processing of Thin Films and Microstructures, Oxidation, Deposition, and Etching of Insulators (Springer—Verlag Berlin Heidelber 1987). |
N. Yamamuchi and R. Reif, Journal of Applied Physics, “Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications”—Apr. 1, 1994—vol. 75, Issue 7, pp. 3235-3257. |
T. Noguchi, “Appearance of Single-Crystalline Properties in Fine-Patterned Si Thin Film Transistors (TFTs) by Solid Phase Crystallization (SPC),” Jpn. J. Appl. Phys. vol. 32 (1993) L1584-L1587. |
Ishihara et al., “A Novel Double-Pulse Exicem-Laser Crystallization Method of Silicon Thin-Films,” Japanese Journal of Applied Physics, Publication Office Japanese Journal of Applied Physics, Tokyo, Japan, vol. 34, No. 8A, Aug. 1995, pp. 3976-3981. |
Kim, H. J., “Excimer-Laser-Induced Crystallization of Amorophus Silicon Thin Films”, Ph. D. Dissertation Abstract, Columbia University, 1996. |
Brotherton, S.D., et al., Characterisation of poly-Si TFTs in Directionally Solidified SLS Si, Asia Display/IDS'01, p. 387-390. |
Dassow, R. et al. Laser-Crystallized Polycrystalline Silicon on Glass for Photovoltaic Applications, Solid State Phenomena, pp. 193-198, vols. 67-68, Scitec Publications, Switzerland. |
Im, J.S., Method and system for producing crystalline thin films with a uniform crystalline orientation, U.S. Appl. No. 60/503,419; ref. file # 36013(BB); Columbia ref. M02-063. |
Kim, H.J. et al., “New Excimer-laser-crystallization method for producing large-grained and grain boundary-location-controlled Si Films for Thin Film Transistors”, Applied Phys. Lett., 68: 1513. |
Limanov, A.B., et al., Development of Linear Sequential Lateral Solidification Technique to Fabricate Quasi-Single-Cyrstal Super-thin Si Films for High-Performance Thin Film Transistor Devices, Perspectives, Science, and Technologies for Novel Silicon on. |
Gosain et al., Formation of (100)-Textured Si Film Using an Excimer Laser on a GlassSubstrate, Jpn. J. Appl. Phys., vol. 42 (2003) pp. L135-L137, 2003. |
Jeon et al., “New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement,” Jpn. J. Appl. Phys. vol. 39 (Apr. 2000) pp. 2010-2014. |
Bergmann et al., “The future of crystalline silicon films on foreign substrates,” Thin Solid Films 403-404 (2002) 162-169. |
Andra et al., “Multicrystalline LLC-SI Thin Film Solar Cells on Low Temperature Glass”, 3rd World Conference on Photovoltaic Energy Conversion May 11-18, 2003, Osaka, Japan, Poster, pp. 1174-1177 (2003). |
Andra et al., “A new technology for crystalline silicon thin film solar cells on glass based on laser crystallization”, Photovoltiac Specialists Conference. Conference Record of the Twenty-Eight IEEE, pp. 217-220 (2000). |
Sinke et al., “Explosive crystallization of amorphous silicon: Triggering and propagation”, Applied Surface Science, 43:128-135 (1989). |
van der Wilt et al., “A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates”, Proc. of SPIE vol. 6106, 61060B-1-B-15, (2006) XP009151485. |
Bergmann, R. et al., Nucleation and Growth of Crystalline Silicon Films on Glass for Solar Cells, Phys. Stat. Sol., 1998, pp. 587-602, vol. 166, Germany. |
Biegelsen, D.K., L.E. Fennell and J.C. Zesch, Origin of oriented crystal growth of radiantly melted silicon on SiO/sub 2, Appl. Phys. Lett. 45, 546 (1984). |
Boyd, Laser Processing of Thin Films and Microstructures, Oxidation, Deposition, and Etching of Insulators (Springer—Verlag Berlin Heidelber 1987). |
Brotherton, S.D., et al., Characterisation of poly-Si TFTs in Directionally Solidified SLS Si, Asia Display/IDS'01, p. 387-390, 2001. |
Crowder et al., “Parametric investigation of SLS-processed poly-silicon thin films for TFT application,” Preparations and Characterization, Elsevier, Sequoia, NL, vol. 427, No. 1-2, Mar. 3, 2003, pp. 101-107, XP004417451. |
Crowder et al., “Sequential Lateral Solidification of PECVD and Sputter Deposited a-Si Films”, Mat. Res. Soc. Symp. Proc. 621:Q.9.7.1-9.7.6, 2000. |
Dassow, R. et al. Laser-Crystallized Polycrystalline Silicon on Glass for Photovoltaic Applications, Solid State Phenomena, pp. 193-198, vols. 67-68, Scitec Publications, Switzerland, 1999. |
Dassow, R. et al. Nd:YVO4 Laser Crystallization for Thin Film Transistors with a High Mobility, Mat. Res. Soc. Symp. Proc., 2000, Q9.3.1-Q9.3.6, vol. 621, Materials Research Society. |
Dassow, R. et al., Laser crystallization of silicon for high-performance thin-film transistors, Semicond. Sci. Technol., 2000, pp. L31-L34, vol. 15, UK. |
Dimitriadis, C.A., J. Stoemenos, P.A. Coxon, S. Friligkos, J. Antonopoulos and N.A. Economou, Effect of pressure on the growth of crystallites of low-pressure chemical-vapor-deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin-film transistors, J. Appl. Phys. 73, 8402 (1993). |
Geis et al., “Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallization,” Appl. Phys. Lett. 35(1) Jul. 1, 1979, 71-74. |
Geis et al., “Silicon graphoepitaxy using a strip-heater oven,” Appl. Phys. Lett. 37(5), Sep. 1, 1980, 454-456. |
Geis et al., “Zone-Melting recrystallization of SI Films with a moveable-strip heater oven” J. Electro-Chem. Soc., 129: 2812 (1982). |
Gupta et al., “Numerical Analysis of Excimer-laser induced melting and solidification of Si Thin Films”, Applied Phys. Lett., 71:99, 1997. |
Hau-Reige et al., “Microstructural Evolution Induced by Scanned Laser Annealing in Al Interconnects,” Appl. Phys. Lett., vol. 75, No. 10, p. 1464-1466, 1999. |
Hawkins, W.G. et al., “Origin of lamellae in radiatively melted silicon films,” appl. Phys. Lett. 42(4), Feb. 15, 1983. |
Hayzelden, C. and J.L. Batstone, Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films, J. Appl. Phys. 73, 8279 (1993). |
Im, J.S., Method and system for producing crystalline thin films with a uniform crystalline orientation, U.S. Appl. No. 60/503,419; ref. file # 36013(BB); Columbia ref. M02-063, Sep. 2003. |
Jung, Y.H., et al., Low Temperature Polycrystalline Si TFTs Fabricated with Directionally Crystallized Si Film, Mat. Res. Soc. Symp. Proc. vol. 621, Z8.3.1-6, 2000. |
Jung, Y.H., et al., The Dependence of Poly-Si TFT Characteristics on the Relative Misorientation Between Grain Boundaries and the Active Channel, Mat. Res. Soc. Symp. Proc. vol. 621, Q9.14.1-6, 2000. |
Kahlert, H., “Creating Crystals”, OE Magazine, Nov. 2001, 33-35. |
Kim, C. et al., Development of SLS-Based SOG Display, IDMC 2005, Thu-15-02, 252-255. |
Kim, H. J. et al., “Excimer Laser Induced Crystallization of Thin Amorphous Si Films on SiO2: Implications of Crystallized Microstructures for Phase Transformation Mechanisms,” Mat. Res. Soc. Symp. Proc., vol. 283, 1993. |
Kim, H.J. et al., “New Excimer-laser-crystallization method for producing large-grained and grain boundary-location-controlled Si Films for Thin Film Transistors”, Applied Phys. Lett., 68: 1513, Mar. 1996. |
Kim, H.J. et al., “Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si Films,” Mat. Res. Soc. Sym. Proc., 321:665-670 (1994). |
Kim, H.-J., et al., “The effects of dopants on surface-energy-driven secondary grain growth in silicon films,” J. Appl. Phys. 67 (2), Jan. 15, 1990. |
Kimura, M. and K. Egami, Influence of as-deposited film structure on (100) texture in laser-recrystallized silicon on fused quartz, Appl. Phys. Lett. 44, 420 (1984). |
Knowles, D.S. et al., “P-59: Thin Beam Crystallization Method: a New Laser Annealing Tool with Lower Cost and Higher Yield for LTPS Panels,” SID 00 Digest, pp. 1-3 , 2005. |
Kohler, J.R. et al., Large-grained polycrystalline silicon on glass by copper vapor laser annealing. Thin Solid Films, 1999, pp. 129-132, vol. 337, Elsevier. |
Kung, K.T.Y. and R. Reif, Implant-dose dependence of grain size and (110) texture enhancements in polycrystalline Si films by seed selection through ion channeling, J. Appl. Phys. 59, 2422 (1986). |
Kung, K.T.Y., R.B. Iverson and R. Reif, Seed selection through ion channeling to modify crystallographic orientations of polycrystalline Si films on SiO/sub 2/:Implant angle dependence, Appl. Phys. Lett. 46, 683 (1985). |
Kuriyama, H., T. Nohda, S. Ishida, T. Kuwahara, S. Noguchi, S. Kiyama, S. Tsuda and S. Nakano, Lateral grain growth of poly-Si films with a specific orientation by an excimer laser annealing method, Jpn. J. Appl. Phys. 32, 6190 (1993). |
Kuriyama, H., T. Nohda, Y. Aya, T. Kuwahara, K. Wakisaka, S. Kiyama and S. Tsuda, Comprehensive study of lateral grain growth in poly-Si films by excimer laser annealing and its application to thin film transistors, Jpn. J. Appl. Phys. 33, 5657 (1994). |
Lee, S.-W. And S.-K. Joo, Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization, IEEE Electron Device Letters 17, 160 (1996). |
Lee, S.-W., Y.-C. Jeon and S.-K. Joo, Pd induced lateral crystallization of amorphous Si thin films, Appl. Phys. Lett. 66, 1671 (1995). |
Leonard, J.P. et al, “Stochastic modeling of solid nucleation in supercooled liquids”, Appl. Phys. Lett. 78:22, May 28, 2001, 3454-3456. |
Limanov, A. et al., Single-Axis Projection Scheme for Conducting Sequential Lateral Solidification of Si Films for Large-Area Electronics, Mat. Res. Soc. Symp. Proc., 2001, D10.1.1-D10.1.7, vol. 685E, Materials Research Society. |
Limanov, A. et al., The Study of Silicon Films Obtained by Sequential Lateral Solidification by Means of a 3-k-Hz Excimer Laser with a Sheetlike Beam, Russian Microelectronics, 1999, pp. 30-39, vol. 28, No. 1, Russia. |
Limanov, A.B., et al., Development of Linear Sequential Lateral Solidification Technique to Fabricate Quasi-Single-Cyrstal Super-thin Si Films for High-Performance Thin Film Transistor Devices, Perspectives, Science, and Technologies for Novel Silicon on, 2000 pp. 55-61. |
Mariucci et al., “Advanced excimer laser crystallization techniques,” Thin Solid Films, vol. 338, pp. 39-44, 2001. |
Micro/Las Lasersystem, GmbH, “UV Optics Systems for Excimer Laser Based Micromaching and Marking” (1999). |
Miyasaka, M., K. Makihira, T. Asano, E. Polychroniadis and J. Stoemenos, In situ observation of nickel metal-induced lateral crystallization of amorphous silicon thin films, Appl. Phys. Lett. 80, 944 (2002). |
Nerding, M., S. Christiansen, R. Dassow, K. Taretto, J.R. Kohler and H.P. Strunk, Tailoring texture in laser crystallization of silicon thin-films on glass, Solid State Phenom. 93, 173 (2003). |
Sato et al., “Mobility anisotropy of electrons in inversion layers on oxidized silicon surfaces” Physical Review B (State State) 4, 1950 (1971). |
Smith, H.I. et al., “The Mechanism of Orientation in Si Graphoepitaxy by Laser or Strip Heater Recrystallization,” J. Electrochem. Soc.: Solid-State Science and Technology, Taiwan FPD, Jun. 11, 2005, pp. 1-12. |
Song et al., “Single Crystal Si Islands on SiO2 Obtained Via Excimer Laser Irradiation of a Patterned Si Film”, Applied Phys. Lett., 68:3165, 1996. |
Sposili et al., “Line-scan sequential lateral solidification of Si thin films”, Appl. Phys. A67, 273-6, 1998. |
Thompson, C.V. and H.I. Smith, Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of silicon, Appl. Phys. Lett. 44, 603 (1984). |
van der Wilt, “The Commercialization of the SLS Technology,” Taiwan FPD, Jun. 11, 2004, pp. 1-12. |
Van Der Wilt, P.C., “State-of-the-Art Laser Crystallization of Si for Flat Panel Displays,” PhAST, May 18, 2004, pp. 1-34. |
Van Der Wilt, P.C., “Textured poly-Si films for hybrid SLS,” Jul. 2004, pp. 1-5. |
Voutsas, A. T., “Assessment of the Performance of Laser-Based Lateral-Crystallization Technology via Analysis and Modeling of Polysilicon Thin-Film-Transistor Mobility,” IEEE Transactions on Electronic Devices, vol. 50, No. 6, Jun. 2003. |
Voutsas, A.T., A new era of crystallization: advances in polysilicon crystallization and crystal engineering, Applied Surface Science 250-262, 2003. |
Voutsas, A.T., et al., Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films, Journal of Applied Physics, vol. 94, No. 12, p. 7445-7452, Dec. 15, 2003. |
Weiner, K. H. et al. “Laser-assisted, Self-aligned Silicide Formation,” A Verdant Technologies technical brief, Aug. 7, 1997, 1-9. |
Werner, J.H., et al. From polycrystalline to single crystalline silicon on glass, Thin Solid Films 383, 95-100, 2001. |
White et al., “Characterization of thin-oxide MNOS memory transistors” IEEE Trans. Electron Devices ED-19, 1280 (1972). |
Number | Date | Country | |
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20070010074 A1 | Jan 2007 | US |
Number | Date | Country | |
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60503420 | Sep 2003 | US |
Number | Date | Country | |
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Parent | PCT/US2004/030328 | Sep 2004 | US |
Child | 11372161 | US |