Claims
- 1. A development method which comprises imagewise exposing a positive acting light-sensitive planographic printing plate comprising an aluminum support and a light-sensitive layer of an o-quinonediazide compound formed thereon, and then developing the exposed plate with a developer comprising an aqueous solution of an alkali metal silicate, adding a supplementary solution comprising an aqueous solution of an alkali metal silicate to the developer to compensate for the degradation of the developer brought about by development and/or by carbon dioxide in the air; wherein said developer comprises an aqueous solution of an alkali metal salt having an [SiO.sub.2 ]/[M] ratio of from 0.5 to 0.75 and an SiO.sub.2 concentration of from 1 to 4% by weight based on the total weight of the developer, where [SiO.sub.2 ] represents the concentration of SiO.sub.2 per unit volume expressed as gram-molecules, and [M] represents the concentration of the alkali metal per unit volume expressed as gram-atoms, and said supplementary solution comprises an aqueous solution of an alkali metal silicate having an [SiO.sub.2 ]/[M] ratio of from 0.25 to 0.75.
- 2. The method of claim 1, wherein each of said developer and supplementary solution contains at least 20%, as gram-atoms, of potassium based on the total amount of alkali metal.
- 3. The method of claim 2, wherein the source of said potassium present in the developer and the supplementary solution is at least one member selected from the group consisting of potassium hydroxide, potassium borate, potassium pyrophosphate, potassium tertiary phosphate, potassium polyphosphate and potassium silicate.
- 4. The method of claim 2, wherein at least one of an anionic or amphoteric surface active agent is added to the developer and the supplementary solution.
- 5. A development method which comprises imagewise exposing a number of positive acting light-sensitive planographic printing plates each consisting of an aluminum plate having an anodically oxidized surface and a light-sensitive layer of an o-quinonediazide compound formed thereon, and developing the exposed plates with a developer comprising an aqueous solution of an alkali metal silicate to remove the exposed areas of the light-sensitive layer, wherein development is performed while said developer is continuously compensated with a supplementary solution comprising an aqueous solution of an alkali metal silicate having an [SiO.sub.2 ]/[M] ratio of from 0.25 to 0.75 such that said developer has an [SiO.sub.2 ]/[M] ratio of from 0.5 to 0.75 and an SiO.sub.2 concentration of from 1 to 4% by weight, in which [SiO.sub.2 ] represents the concentration of SiO.sub.2 per unit volume expressed as gram-molecules, and [M] represents the concentration of alkali metal per unit volume expressed as gram-atoms, and wherein the content of potassium in the developer, in gram-atoms based on the total alkali metal content, is at least 20%.
- 6. The method of claim 1, wherein said light-sensitive layer is coated on the support in an amount of from 0.5 to about 7 g/m.sup.2.
- 7. The method of claim 1, wherein said light-sensitive layer comprises an o-quinonediazide compound and an alkali-soluble resin.
- 8. The method of claim 7, wherein said alkali-soluble resin is a novolac-type phenolic resin.
- 9. The method of claim 7, wherein said alkali-soluble resin is present in an amount of 50 to 85% by weight and said o-quinonediazide is present in an amount of 15 to 50% by weight based on the weight of the light-sensitive layer.
- 10. The method of claim 1, wherein said light-sensitive layer contains an additive such that upon exposure and development the areas in which the light-sensitive layer is present are visually discernable from the uncovered support.
- 11. The method of claim 1, wherein said development is carried out with an automatic processor having a plurality of nozzle developer delivery means from which said developer is sprayed against the surface of said light-sensitive layer and also having developer storage means from which developer fed to said nozzle developer delivery means pipes is charged, said sprayed developer being recovered to said delivery storage means for reuse in said development.
- 12. The method of claim 11, wherein said developer has an SiO.sub.2 concentration of from 1 to 3% by weight.
- 13. The method of claim 11, wherein said developer has an [SiO.sub.2 ]/[M] ratio of 0.5 to 0.65 and an SiO.sub.2 concentration of 1.0 to 2.0% by weight.
- 14. The method of claim 11, wherein each of said developer and supplementary solutions contains at least 20%, as gram-atoms, of potassium based on the total amount of alkali metal therein.
- 15. The method of claim 14, wherein each of said solutions contains from about 20% to about 90%, as gram-atoms, of potassium based on the total amount of alkali metal therein.
- 16. The method of claim 14, wherein each of said solutions contains from about 30% to about 80%, as gram-atoms, of potassium based on the total amount of alkali metal therein.
- 17. The method of claim 15, wherein the source of said potassium present in the developer and the supplementary solution is at least one member selected from the group consisting of potassium hydroxide, potassium borate, potassium pyrophosphate, potassium tertiary phosphate, potassium polyphosphate and potassium silicate.
- 18. The method of claim 5, wherein said development is carried out with an automatic processor having a plurality of nozzle developer delivery means from which said developer is sprayed against the surface of said light-sensitive layer and also having developer storage means from which developer fed to said nozzle developer delivery means pipes is charged, said sprayed developer being recovered to said delivery storage means for reuse in said development.
- 19. The method of claim 18, wherein said developer has an SiO.sub.2 concentration of from 1 to 3% by weight.
- 20. The method of claim 18, wherein said developer has an [SiO.sub.2 ]/[M] ratio of 0.5 to 0.65 and an SiO.sub.2 concentration of 1.0 to 2.0% by weight.
- 21. The method of claim 18, wherein each of said developer and supplementary solutions contains at least 20%, as gram-atoms, of potassium based on the total amount of alkali metal therein.
- 22. The method of claim 21, wherein each of said solutions contains from about 20% to about 90%, as gram-atoms, of potassium based on the total amount of alkali metal therein.
- 23. The method of claim 21, wherein each of said solutions contains from about 30% to abbout 80%, as gram-atoms, of potassium based on the total amount of alkali metal therein.
- 24. The method of claim 22, wherein the source of said potassium present in the developer and the supplementary solution is at least one member selected from the group consisting of potassium hydroxide, potassium borate, potassium pyrophosphate, potassium tertiary phosphate, potassium polyphosphate and potassium silicate.
- 25. The method of claim 18, wherein said light-sensitive layer is coated on the support in an amount of from 0.5 to about 7 g/m.sup.2.
- 26. The method of claim 18, wherein said light-sensitive layer comprises an o-quinonediazide compound and an alkali-soluble resin.
- 27. The method of claim 26, wherein said alkali-soluble resin is a novolac-type phenolic resin.
- 28. The method of claim 27, wherein said alkali-soluble resin is present in an amount of 50 to 85% by weight and said o-quinonediazide is present in an amount of 15 to 50% by weight based on the weight of the light-sensitive layer.
- 29. The method of claim 18, wherein said light-sensitive layer contains a dye such that upon exposure and development the areas in which the light-sensitive layer is present are visually discernable from the uncovered support.
- 30. The method of claim 26, wherein said o-quinonediazide compound is selected from the group consisting of o-naphthoquinonediazide and sulfonic acid esters or o-naphthoquinonediazide carboxylic acid esters of aromatic hydroxy compounds and o-naphthoquinonediazide sulfonic acid amides or o-naphthoquiononediazide carboxylic acid amides of aromatic anion compounds.
- 31. The method of claim 11, wherein the [SiO.sub.2 ]/[M] ratio and the SiO.sub.2 concentration of said supplementary solution are such values as will maintain the corresponding developer ratio and concentrations as the developer is used to process said plate, or as time passes, within the original corresponding developer ratio and concentrations.
- 32. The method of claim 18, wherein the [SiO.sub.2 ]/[M] ratio and the SiO.sub.2 concentration of said supplementary solution are such values as will maintain the corresponding developer ratio and concentrations as the developer is used to process said plate, or as time passes, within the original corresponding developer ratio and concentrations.
- 33. The method of claim 31, which is a continuous process.
- 34. The method of claim 32, which is a continuous process.
- 35. The method of claim 33, wherein said supplementary solution has an [SiO.sub.2 ]/[M] ratio the same as the developer but a higher [M] concentration.
- 36. The method of claim 33, wherein said supplementary solution has the same [SiO.sub.2 ] concentration as the developer, but the [SiO.sub.2 ]/[M] ratio thereof is lower than that of the developer.
- 37. The method of claim 34, wherein said supplementary solution has an [SiO.sub.2 ]/[M] ratio the same as the developer but a high [M] concentration.
- 38. The method of claim 37, wherein said supplementary solution has the same [SiO.sub.2 ] concentration as the developer, but the [SiO.sub.2 ]/[M] ratio thereof is lower than that of the developer.
Priority Claims (5)
Number |
Date |
Country |
Kind |
52-127338 |
Oct 1977 |
JPX |
|
A7596 |
Oct 1978 |
AUX |
|
2846256 |
Oct 1978 |
DEX |
|
78 30174 |
Oct 1978 |
FRX |
|
53-96307 |
Aug 1978 |
JPX |
|
CROSS-REFERENCE TO THE RELATED APPLICATION
This is a continuation-in-part application of Ser. No. 954,033, filed Oct. 23, 1978 now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3869292 |
Peters |
Mar 1975 |
|
4123279 |
Kobayashi |
Oct 1978 |
|
Non-Patent Literature Citations (1)
Entry |
DeForest = Photoresist Materials and Processes, McGraw-Hill Book Company, New York, Jun. 19, 1975, pp. 194-195. |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
954033 |
Oct 1978 |
|