Claims
- 1. A method for dicing a semiconductor wafer having a plurality of semiconductor chips fabricated on a primary surface comprising:
reading data from the primary surface; controlling the movement of a cutting device relative to the primary surface of the semiconductor wafer based on the data; and operating the cutting device whereby portions of the semiconductor wafer between adjacent semiconductor chips are removed to separate individual semiconductor chips.
- 2. A method for dicing a semiconductor wafer according to claim 1, further comprising:
aligning the semiconductor wafer relative to the cutting device.
- 3. A method for dicing a semiconductor wafer according to claim 1, wherein:
the cutting device includes a laser.
- 4. A method for dicing a semiconductor wafer according to claim 1, further comprising:
retrieving additional data corresponding to the data read from the primary surface.
- 5. A method for dicing a semiconductor wafer according to claim 4, wherein:
the additional data includes parametric test data or functional test data corresponding to one or more of the semiconductor chips.
- 6. A method for dicing a semiconductor wafer according to claim 1, wherein:
reading data from the primary surface includes a method selected from a group consisting of optical scanning of a majority of the primary surface, optical scanning of predetermined regions on the primary surface, optical scanning of encoded regions, laser scanning of a majority of the primary surface, laser scanning of predetermined regions on the primary surface, laser scanning of encoded regions and laser scanning of barcode regions.
- 7. A method for dicing a semiconductor wafer according to claim 1, wherein:
the plurality of semiconductor chips arranged on the primary surface include a first group having a first edge profile and a second group having a second edge profile, wherein the first edge profile is distinct from the second edge profile.
- 8. A method for dicing a semiconductor wafer according to claim 7, wherein:
at least one of the edge profiles includes a stepped region.
- 9. A method for dicing a semiconductor wafer according to claim 7, wherein:
at least one of the edge profiles includes a curved region.
- 10. A method for dicing a semiconductor wafer according to claim 7, wherein:
at least one of the edge profiles includes a concave region.
- 11. A method for dicing a semiconductor wafer according to claim 1, wherein:
the plurality of semiconductor chips arranged on the primary surface have a uniform edge profile.
- 12. A method for dicing a semiconductor wafer according to claim 11, wherein:
the edge profile includes a stepped region.
- 13. A method for dicing a semiconductor wafer according to claim 11, wherein:
the edge profiles includes a curved region.
- 14. A method for dicing a semiconductor wafer according to claim 11, wherein:
the edge profiles includes a concave region.
- 15. A method for dicing a semiconductor wafer according to claim 1, wherein:
the data read from the primary surface is used to identify known good die; and only those portions of the semiconductor wafer surrounding known good die are removed.
- 16. A method for dicing a semiconductor wafer having a plurality of semiconductor chips fabricated on a primary surface comprising:
reading data from the primary surface; controlling the movement of a cutting device relative to the primary surface of the semiconductor wafer based on the data; and operating the cutting device whereby portions of the semiconductor wafer between adjacent semiconductor chips are removed to separate a first semiconductor chip having a first edge profile and a second semiconductor chip having a second edge profile, wherein the first and second edge profiles are complementary whereby the first and second semiconductor chips may be incorporated in a chip set package to improve space utilization within the chip set package.
Priority Claims (1)
| Number |
Date |
Country |
Kind |
| 2003-17968 |
Mar 2003 |
KR |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This U.S. non-provisional application claims priority under 35 U.S.C. § 119 of Korean Patent Application No. 2003-17968, which was filed Mar. 22, 2003, the entire contents of which are incorporated herein by reference.