Claims
- 1. A method for fabricating an electrode structure comprising a step of forming an electrode layer on a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y,.ltoreq.1) semiconductor layer,
- wherein the electrode layer is formed by depositing a nitride forming metal and a hydrogen absorbing metal on the semiconductor layer.
- 2. A method for fabricating an electrode structure according to claim 1 further comprising a step of annealing the semiconductor layer and the electrode layer after the nitride forming metal and the hydrogen absorbing metal are sequentially deposited on the semiconductor layer.
- 3. A method for fabricating an electrode structure comprising a step of forming an electrode layer on a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer,
- wherein the electrode layer is formed by simultaneously depositing a nitride forming metal and a hydrogen absorbing metal on the semiconductor layer.
- 4. A method for fabricating an electrode structure according to claim 3 further comprising a step of annealing the semiconductor layer and the electrode layer after the nitride forming metal and the hydrogen absorbing metal are simultaneously deposited on the semiconductor layer.
- 5. A method for fabricating an electrode structure comprising a step of forming an electrode layer on a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer,
- wherein the electrode layer is formed by depositing an intermetallic compound containing a nitride forming metal and a hydrogen absorbing metal on the semiconductor layer.
- 6. A method for fabricating an electrode structure according to claim 5 further comprising a step of annealing the semiconductor layer and the electrode layer after the intermetallic compound is deposited on the semiconductor layer.
- 7. A method for fabricating an electrode structure according to claim 1, wherein the electrode layer is formed by sequentially depositing a nitride forming metal and a hydrogen absorbing metal on the semiconductor layer.
- 8. A method for fabricating an electrode structure according to claim 1, wherein the electrode layer is formed by sequentially depositing a hydrogen absorbing metal and a nitride forming metal on the semiconductor layer.
- 9. A method for fabricating an electrode structure according to claim 1, wherein the nitride forming metal is selected from the group consisting of Sc, Ti, V, Cr, Zr, Nb, La and Ta.
- 10. A method for fabricating an electrode structure according to claim 1, wherein the hydrogen absorbing metal is selected from the group consisting of Y, Ce, Pr, Nd, Sm, Eu, Yb, Hf, Pd, Tm, Er, Ho, Dy, Th and Gd.
- 11. A method for fabricating an electrode structure according to claim 3, wherein the nitride forming metal is selected from the group consisting of Sc, Ti, V, Cr, Zr, Nb, La and Ta.
- 12. A method for fabricating an electrode structure according to claim 3, wherein the hydrogen absorbing metal is selected from the group consisting of Y, Ce, Pr, Nd, Sm, Eu, Yb, Hf, Pd, Tm, Er, Ho, Dy, Tb and Gd.
- 13. A method for fabricating an electrode structure according to claim 5, wherein the nitride forming metal is selected from the group consisting of Sc, Ti, V, Cr, Zr, Nb, La and Ta.
- 14. A method of fabricating an electrode structure according to claim 5, wherein the hydrogen absorbing metal is selected from the group consisting of Y, Ce, Pr, Nd, Sm, Eu, Yb, Hf, Pd, Tm, Er, Ho, Dy, Tb and Gd.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-167124 |
Jul 1994 |
JPX |
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Parent Case Info
This application is a divisional of application Ser. No. 08/504,101, filed Jul. 19, 1995 now U.S. Pat. No. 5,701,035.
US Referenced Citations (5)
Number |
Name |
Date |
Kind |
5422500 |
Tomokawa et al. |
Jun 1995 |
|
5432808 |
Hatano et al. |
Jul 1995 |
|
5583676 |
Akiyama et al. |
Dec 1996 |
|
5650641 |
Sassa et al. |
Jul 1997 |
|
5804834 |
Shimoyama et al. |
Sep 1998 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
5-291621 |
Nov 1993 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Nakamura et al. "P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes" Jpn. J. Appl. Phys. (1993) 32: L8-L11. |
Lin et al. "Low resistance ohmic contacts on wide band-gap GaN" Appl. Phys. Lett. (1994) 64: 1003-1005. |
Divisions (1)
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Number |
Date |
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Parent |
504101 |
Jul 1995 |
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