Patent Application
20060076060
The present invention is utilized mainly in the fields of the production of pharmaceuticals, nuclear fuels, chemicals, semiconductors and the like, and is concerned with the method for the fluid flow rate control which can control the flow rate of a fluid as supplied such as hydrofluoric gas or hydrogen fluoride (hereinafter called the HF gas), ozone, water and the like (hereinafter called a clustering fluid) with high precision using a flow rate control device. The present invention is also concerned with a flow rate control device employed in the method for the flow rate control of the clustering fluid.
The clustering fluid such as the HF gas and the like has been widely utilized in the fields of the production of chemicals, semiconductors and the like. Accordingly, a wide variety of flow rate control devices are used in the facilities to supply the clustering fluid such as the HF gas and the like. Among others, a mass flow controller, a pressure difference type flow rate control device and the like are the ones comparatively widely utilized.
The clustering fluid such as the HF gas and the like is known as a substance having peculiar properties such as high density, high specific heat ratio, high dependence of the molecular association on the temperature and pressure, high dependence of an endothermic amount on the temperature at the time of the molecular dissociation, and the like.
Therefore, Boyle's and Charles' law does not apply to the clustering fluid unlike ideal gases like the oxygen gas or the nitrogen gas, and in regard with the flow control there exist many problems which are not encountered when controlling the flow rate control of the oxygen gas or the nitrogen gas. This is because the molecular weight of the clustering fluid such as the HF gas and the like greatly changes depending on the pressure fluctuations and others due to dependence of the molecular association on the temperature and pressure, and even if the clustering fluid such as the HF gas and the like has the same weight, the number of mole of the clustering fluid changes when the molecular weight M changes.
Because the association heat of the molecules of the clustering fluid such as the HF gas and the like is great, the bigger the pressure difference is when it is supplied, the larger endothermic effects result. In the event that the endothermic effects are remarkable, a problem such as liquefaction will occur because of the low steam pressure.
Hence, with the conventional supply systems for the clustering fluid such as the HF gas and the like, it has been tried to improve precision of the flow rate control precision of the clustering fluid such as the HF gas and the like by mixing the clustering fluid in a large amount of the diluting gas and controlling the diluting gas so that a high precision flow rate control of the clustering fluid such as the HF gas and the like can be achieved. Or, a heating device is installed at the supply source of the clustering fluid such as the HF gas and the like so that the clustering fluid such as the HF gas and the like is supplied under a relatively high pressure and in a state in which the clustering of the fluid is made difficult by heating the fluid at a high temperature.
However, if a large amount of the diluting gas is used, or the clustering fluid heated to a high temperature is supplied under high pressure, its cost effectiveness and controllability may be hindered. Furthermore, in the event that the process side, for instance the semiconductor manufacturing facilities, to which the clustering fluid is supplied, is low-pressurized to 10−2˜102 Torr forming a near-vacuum, the high precision flow rate control can be never achieved with the conventional mass flow controller due to various difficulties caused in the practical use.
On the other hand, in the field of semiconductor manufacturing in recent years, the pressure type flow rate control device is widely used for the flow rate control of the gases as supplied, replacing the conventional mass flow rate controller in which the flow rate is basically controlled by detecting the transfer of heat quantity. With the said pressure type flow rate control device, in the event that the fluid passing through an orifice is under the so-called critical condition, the flow rate of the fluid Q can be obtained from the formula, Q=KP1 (where K represents a constant determined by a nozzle, and P1 represents the gas pressure on the upstream side of the nozzle). In the semiconductor manufacturing facilities and the like where the pressure on the downstream side of the nozzle (i.e., the process side to which the gas is supplied) is generally low-pressurized to almost a vacuum, use of the pressure type flow rate control device is favored from the view point of maintaining the afore-mentioned critical condition.
However, with the pressure type flow rate control device in which the gas flow rate is computed on the basis that the gas to be controlled passes through an orifice under the so-called critical condition holding the ratio P2/P1 between the pressure P1 on the upstream side of the orifice and the pressure P2 on the downstream side of the orifice at a value less than about 0.5, the degree of the molecular association of the cluster-making fluid such as the HF gas and the like changes due to fluctuation of the temperature caused by the endothermic action at the time of the dissociation of molecules, or due to fluctuation of the pressure on the downstream side of the orifice (or the process side). If, as a result, the critical condition of the clustering fluid such as the HF gas and the like is not satisfied, the high precision flow rate control of the clustering fluid such as the HF gas and the like becomes basically impossible, thus causing various difficulties.
For example, if the ratio Q
On the other hand, the flow rate factor F.F. of the afore-mentioned various gases can be computed by the theoretical formula, and normally it can be computed by the following formula:
F.F.=(K/rs){2/(κ+1)}1/(κ−1)[κ/{(κ+1)·R}]1/2 [Formula 1]
where rs represents density of the gas in the normal state, κ a specific heat ratio of gas, R a gas constant, and K a proportional constant not depending on the type of gas (TOKU-KAI No. 2000-322130).
The flow factor F.F. of the HF gas at the room temperature can be obtained by the afore-mentioned theoretical formula as follows:
F.F.=0.440100
On the contrary, when the flow factor F.F. is actually measured by using the flow rate test device in
The temperature is that of the heated body part of the pressure type flow rate control device.
As apparent from the afore-mentioned flow factor value, due to the peculiar properties of the HF gas which permit the HF gas to form a state of molecules as bound together depending on the conditions of pressure and temperature, the flow factor value of the HF gas, as actually measured, is vastly different from that determined by the theoretical formula. It is, thus, found that the concept that applies to ordinary gases such as N2 gas, O2 gas and the like will not be applicable to the flow rate control of the HF gas when the pressure type flow rate control device is in use.
The above explanation was given with respect to the case where the pressure type flow rate control device is employed. However, it should be noted that the explanation can also apply to the cases where the heat type flow rate control device such as a mass flow controller, or the flow rate control device using a flow rate control valve is employed. In these cases too, the concept applicable to the ordinary gases such as the O2 gas, N2 gas and the like cannot apply to the flow rate control of the cluster fluid such as the HF gas and the like.
It is an object of the present invention to solve such problems as encountered when the flow rate control device is used for controlling the flow rate of the clustering fluid such as the HF gas and the like, that is, the problem that the conventional flow rate control device can not achieve a high precision flow rate control of the clustering fluid such as the HF gas and the like to be supplied to a low pressurized chamber due to the changes in the molecular weight and the number of mole caused by the molecular association and the like, the changes in the temperature caused by the endothermic action at the time of dissociation of molecules, and the changes in the degree of the molecular association caused by the fluctuations of the pressure and temperature. It is also an object of the present invention to provide a method for the flow rate control of the clustering fluid such as the HF gas and the like in which the temperature of a main part of the flow rate control device is maintained at 40° C.˜85° C., more preferably higher than 65° C., or the clustering fluid is added with a dilute gas to keep the fluid not higher than a partial pressure by making use of the fact that the clustering fluid has not only temperature dependency but also pressure dependency so that the association of the clustering fluid such as the HF gas and the like is dissociated to keep the clustering fluid in a theoretically monomolecular state (or a state of a small number of cluster molecules) with the clustering fluid being permitted to pass through the flow rate control device, thereby making it possible to control the flow rate of the clustering fluid such as the HF gas and the like with a high precision and to supply the clustering fluid to a low pressurized chamber. It is also an object of the present invention to provide a device for the flow rate control of the clustering fluid to be used in the above mentioned method.
The inventors of the present invention first conceived an idea of using the pressure type flow rate control device and heating a major part of the pressure type flow rate control device so that the flow rate control device can supply the clustering fluid with the flow rate of 3˜300 SCCM to a low pressurized process chamber used in the semiconductor manufacturing facilities while subjecting the fluid to a high precision flow rate control. And, then, based on the afore-mentioned idea, tests were conducted to determine the relationship between the heating temperature and flow rate control characteristics (flow rate control precision) with respect to a plural number of set flow rates (75%, 60%, 45%, 30% and 15%) of the pressure type flow rate control device.
The present invention has been created based on the afore-mentioned test results. The present invention in Claim 1 relates to a method for supplying a clustering fluid from a gas supply source to desired instruments or apparatuses by using a flow rate control device in which the association of molecules of the clustering fluid passing through the said flow rate control device is dissociated by heating the afore-mentioned flow rate control device so that the clustering fluid kept in a monomolecular state is supplied by the flow rate control device while subjected to the flow rate control.
The present invention in Claim 2 relates to a method for supplying a clustering fluid from a gas supply source to desired instruments or apparatuses by using a flow rate control device in which the association of molecules of the clustering fluid passing through the afore-mentioned flow rate control device is dissociated by diluting the afore-mentioned clustering fluid to a level lower than a partial pressure so that the clustering fluid kept in a monomolecular state is supplied by the flow rate control device while subjected to the flow rate control.
The present invention in Claim 3 relates to a method as claimed in Claim 1 or Claim 2 wherein the flow rate control device is a flow rate control valve, a heat type flow rate control device or a pressure type flow rate control device.
The present invention in Claim 4 relates to a method as claimed in Claim 1 wherein the temperature for heating of a main body of the flow rate control device is not lower than 40° C.
The present invention in Claim 5 relates to a method for the flow rate control of a clustering fluid employing a pressure type flow rate control device in which the flow rate Q of the gas passing through an orifice is computed as Q=KP1 (where K is a constant) with the gas passing through the orifice in a state where the ratio P2/P1 between the gas pressure P1 on the upstream side of the orifice and the gas pressure P2 on the downstream side of the orifice is held at a value lower than the critical pressure ratio of the gas wherein the clustering fluid is permitted to pass through the afore-mentioned orifice while the afore-mentioned pressure type flow rate control device is heated to the temperature not lower than 40° C.
The present invention in Claim 6 relates to a method as claimed in Claim 5 wherein a chamber which is connected to the downstream side of the pressure type flow rate control device and receives the clustering fluid is a vacuum device.
The present invention in Claim 7 relates to a method as claimed in Claim 5 wherein the graduation of the pressure type flow rate control device is determined based on the N2 gas, and the flow rate factor F.F. of the clustering fluid against the N2 gas is appropriately chosen according to the temperature of the main body of the pressure type flow rate control device so that the flow rate of the clustering fluid is obtained by multiplying the measured flow rate value of the passing clustering fluid by the afore-mentioned flow factor F.F.
The present invention in Claim 8 relates to a method as claimed in Claim 6 wherein the pressure type flow rate control device is heated to the temperature of 40° C.˜85° C., and the vacuum device which is connected to the downstream side of the pressure type flow rate control device and receives the clustering fluid is a vacuum chamber whose pressure is 10−3 Torr˜102 Torr.
The present invention in Claim 9 relates to a method as claimed in Claim 5 wherein the range of the flow rate control of clustering fluid to be supplied from the pressure type flow rate control device to the vacuum chamber is 3-300 SCCM.
The present invention in Claim 10 relates to a method as claimed in Claim 1 to Claim 9 wherein the clustering fluid is hydrogen fluoride gas, water or ozone.
The present invention in Claim 11 relates to a method as claimed in Claim 7 wherein the temperature of a main body of the pressure type flow rate control device is 45° C. while the flow factor is F.F. is 1.1665 when hydrogen fluoride is in use for the fluid.
The present invention in Claim 12 relates to a flow rate control device for a clustering fluid which supplies the clustering fluid from a fluid supply source to desired instruments or apparatuses in which the association of molecules of the clustering fluid passing through the said flow rate control device is dissociated by heating a main body of the afore-mentioned flow rate control device so that the flow rate control device is permitted to control the flow rate of the clustering fluid kept in a monomolecular state.
The present invention in Claim 13 relates to a flow rate control device for a clustering fluid which supplies the clustering fluid from a fluid supply source to desired instruments or apparatuses in which the association of molecules of the clustering fluid passing through the said flow rate control device is dissociated by diluting the afore-mentioned clustering fluid to a level lower than a partial pressure so that the flow rate control device is permitted to control the flow rate of the clustering fluid kept in a monomolecular state.
The present invention in Claim 14 relates to a flow rate control device as claimed in Claim 12 or Claim 13 wherein any one of a flow rate control valve, a heat type flow rate control device or a pressure type flow rate control device is chosen for the flow rate control device.
The present invention in Claim 15 relates to a flow rate control device as claimed in Claim 12 wherein a main body of the flow rate control device is heated to the temperature not lower than 40° C.
The present invention in Claim 16 relates to a pressure type flow rate control device in which the flow rate Q of the gas passing through an orifice is computed as Q=KP1 (where K is a constant) with the gas passing through the orifice in a state where the ratio P2/P1 between the gas pressure P1 on the upstream side of the orifice and the gas pressure P2 on the downstream side of the orifice is held at a value not higher than the critical pressure ratio of the gas wherein the fluid to be controlled is the clustering fluid, and a heating device is installed in the pressure type flow rate control device so that the heating device is permitted to heat a main body of the pressure type flow rate control device to the temperature not lower than 40° C.
The present invention in claim 17 relates to a pressure type flow rate control device as claimed in claim 16 wherein the clustering fluid flow factor F.F. based on the N2 gas is appropriately chosen according to the temperature of the main body of the pressure type flow rate control device, and the graduation of the pressure type flow rate control device is determined using the said chosen flow factor F.F. value.
The present invention in Claim 18 relates to a flow rate control device as claimed in Claim 13 to Claim 17 inclusive wherein the clustering fluid is hydrogen fluoride gas, water or ozone.
The present invention in Claim 19 relates to a pressure type flow rate control device as claimed in Claim 17 wherein the temperature of the main body of the pressure type flow rate control device is 45° C. while the flow factor F.F. is 1.1665 when the hydrogen fluoride gas is in use for the fluid.
The mode of carrying out the present invention is explained hereunder.
{circle around (1)} The flow rate control characteristics shown when the HF gas is passed at the flow rate of 4-100 SCCM are confirmed using 2 sets of the pressure type flow rate control device (for the N2 gas).
{circle around (2)} There are confirmed the state of the flow rate control in which the build-up chamber is heated and the state of the flow rate control in which the build-up chamber is not heated.
{circle around (3)} The flow rate control error shown when the HF gas is passed at the same flow rate to the flow rate control devices (for the N2 gas) having different flow rate ranges is confirmed.
{circle around (4)} A linearity of the flow rate control shown when the flow rate of the HF gas is controlled (at the time of the intermediate setting measurement and at the time when the measurement is conducted by the build-up flow rate measurement device) is confirmed.
{circle around (5)} Flow rate control precision shown when the temperature for heating the pressure type flow rate control device (for the N2 gas) is changed (45° C.±2) is confirmed.
{circle around (6)} The flow rate shown when the heating temperature is raised to a high temperature (85° C.) is confirmed using the pressure type flow rate control device for high temperature.
{circle around (7)} Flow rate precision shown when the heating temperature is changed to a high temperature (85° C.±2° C.) is confirmed using the pressure type flow rate control device for high temperature.
On the basis of the results of the afore-mentioned tests {circle around (1)}˜{circle around (7)}, an optimum range of the heating condition is determined examining the relationship between the flow rate measurement precision and temperature conditions where the flow rate of the HF gas is controlled using the pressure type flow rate control device.
Referring to
The N2 gas of 201 kPa abs. and the HF gas are supplied to the afore-mentioned N2 gas supply line 1 and the HF gas supply line 2 respectively.
Furthermore, a capacitance manometer (rated as 13.3 kPa abs.) is used for the pressure sensor P, and a resistance thermometer (Pt100) is used for the temperature sensor T.
K.K. FUJIKIN-made FCS-4WS-F115A (115SCCMF.S.), FCS4WS-F65A (65SCCMF.S.), FCS-4WS-F20A (20SCCMF.S.) and FCS-4JR-124-F115A-HT (115SCCMF.S. for high temperature) are used for the pressure type flow rate control device 3 which is the afore-mentioned test specimen. The build-up chamber 4 has an inside volume of 1000 cc. And, an EDWARDS INC.-made vacuum pump is used for the vacuum pump 5.
A so-called build-up flow rate measurement device S is formed of the pressure type flow rate control device 3, the build-up chamber 4, the pressure gauge P and valves V1˜V5 and the like.
The pressure type flow rate control device 3 and the build-up chamber 4 are temperature-adjusted by the heat adjuster 6 (K.K. REKEN-KEIKI-made CB100) at a prescribed temperature determined by the heating conditions, and the temperature is measured at some parts (totaling 8 points) using the sheath type K thermocouple as mentioned later.
The heating conditions in the tests as will be mentioned below are follows with respect to the pressure type flow rate control device 3 and the build-up chamber 4:
Each test specimen 3 has 5 measurement points (6 measurement points only for F20A), which are the points of 75%, 60%, 45%, 30%, 15%, (90% only for F20A) of the respective rated set values. The set value (%) means the setting against the input signal 0-100% and the input voltage signal 0-5V to the pressure type flow rate control device 3.
Furthermore, when the measurement is conducted at the same flow rate point, 3 points of 48.8 SCCM, 20.0 SCCM and 9.75 SCCM (based on N2) are measured respectively.
The places for measuring the afore-mentioned temperature are as listed in Table 1. Point A designates a temperature monitor display of the leak port part of the main body of the pressure type flow rate control device, B a thermistor fitting part of the main body of the pressure type flow rate control device, Point C a lower part of the base plate of the computing control part, Point D the room temperature in the test room, Point E a temperature monitor display of the build-up chamber, Point F is a temperature displayed on the temperature adjuster 6 mounted on the build-up chamber, and Point G is a temperature displayed on the temperature adjustor 6 mounted on the pressure type flow rate control device.
The afore-mentioned tests {circle around (1)}˜{circle around (7)} were conducted in the following order.
{circle around (1)} The pressure type flow rate control device 3 which is the test specimen is connected as illustrated in
{circle around (2)} The warming-up operation of the pressure type flow rate control device 3 and other measurement instruments is effected for more than 1 hour before the test is started.
{circle around (3)} Atmospheric gas is evacuated to a vacuum state up to the upstream side of the pressure type flow rate control device 3 by the vacuum pump 5.
{circle around (4)} A cycle purge using the N2 gas is conducted for a gas substitution.
{circle around (5)} Valves placed forwardly and backwardly of the pressure type flow rate control device 3 are closed while the system is kept in the vacuum state. The system is left for 10 minutes as it is, in order to confirm that there is no rise in the pressure command output (no leak is confirmed).
{circle around (6)} Next, the gas (the HF gas or the N2 gas) to be measured is allowed to pass to the pressure type flow rate control device 3, to measure the flow rate by the build-up method. The measurement is conducted 3 times to determine the average of the measurements, which will be the measurement result. It should be noted that the pressure inside the build-up chamber 4 is evacuated to a vacuum degree of 102 Torr before the start of the measurement.
{circle around (7)} A special heater is used for heating the pressure type flow rate control device 3.
{circle around (8)} Ample time should be given for the temperature adjustment, and the measurement should start after confirming that the temperature has been stabilized.
The results of the temperature measurement are as shown in Table 1˜Table 3. It should be noted that, in the Tables, the heating conditions {circle around (1)} are that the temperature of the test specimen 3 is 45° C. and the build-up chamber is not heated while the heating conditions {circle around (2)} are that the temperature of the test specimen 3 is 45° C. and the temperature of the build-up chamber is 40° C.
[Result of Temperature Measurement]
As apparent from the results in Table 1 to Table 3 inclusive, there is seen a difference of about 0.2˜2.2° C. between the value displayed on the FCS temperature adjustor 6 in the item G and the temperature of the thermistor part in the item B. Therefore, this should be noted in the event that the strict temperature management is required fore electronic components and the like.
Table 4-1 shows the results of the measurement of the flow rate, which demonstrate that even under the same heating conditions, there are differences between the N2 gas and the HF gas in the respective flow rate settings (75%, 60%, 45%, 30% and 15%). The measured flow rates are the results of the measurements conducted 3 times. It is learned, then, that there is no fluctuation of the flow rate value between the measurements with the pressure type flow rate control device. Furthermore, Table 4-2 shows the flow rates as measured to conduct the test stated in the afore-mentioned Item {circle around (3)} (Page 14) using the pressure type flow rate control device shown in
Table 5-1 shows the flow rate measurement results where F65A is used for the test specimen (the pressure type flow rate control device) 3, and Table 5-2 shows the measurement results of the same flow rates with F65A.
Similarly, Table 6-1 shows the flow rate measurement results where F20A is used for the test specimen (the pressure type flow rate control device) 3, and Table 6-2 shows the measurement results of the same flow rate with F20A.
Table 7 shows the flow factor F.F. for each test specimen (the pressure type flow rate control device) 3 computed on the basis of the actually measured flow rate values where the formula F.F.=HF gas flow rate/N2 gas flow rate.
The average value of F.F. is computed as the average of the F.F. values in the flow ranges of 14˜60%. Under the heating conditions {circle around (2)}, it is learned that the difference is more than 1/100 order at respective flow rate ranges (%).
Table 8˜Table 10 show the measurement errors or discrepancies between the test specimens 3 at the same set flow rate. Even if the same flow rate value is measured with the test specimens 3, it is learned that there occurs the error of 0.8 SCCM at the maximum between the specimen types in the case of the HF gas.
As apparent from
With Table 11 and Table 12, it was confirmed on the basis of the flow rate measurement by the build-up method whether there is any flow rate change or not in each pressure range to find if the afore-mentioned critical condition is always realized at the time of the flow rate measurement of the HF gas. This is because the specific heat ratio of the HF gas is greater than those of normal gases, and there is a possibility that the critical pressure ratio becomes smaller.
More concretely, with calculation of the flow rate correction, it was assumed that the pressure range is 30 Torr˜90 Torr, selecting the pressure interval of 20 Torr.
As apparent from the results in Table 11 and Table 12, there was observed little difference in the calculated flow rate ratio over all the pressure ranges. Accordingly, it is understood that even with the HF gas having a great gas specific heat, the flow rate measurements are conducted under the situation where the critical condition is satisfied over the entire ranges of the said flow rate measurement tests.
(F115A, HF gas, Heating conditions {circle around (2)}, Setting signal 75%)
(F65A, HF gas, heating conditions {circle around (2)}, Setting signal 75%)
Table 13-1˜Table 13-4 inclusive show the results of the flow rate measurements with F114A and F115A-HT for the test specimen (the pressure type flow rate control device) 3, and the heated temperature of the test specimen 3 was 45° C.±2° C. and 85° C.±2° C. In the flow rate measurement in Table 13-1 to Table 13-4, the temperature of the build-up chamber 4 is fixed at 40° C.
ΔQ in Table 13-1˜Table 13-5 indicates the flow rate error between the flow rate at the time of the set temperature and the flow rate at the time of the base temperature (45° C. and 85° C.).
Table 13-5 shows the flow factor F.F. where F115A-HT is used for the test specimen 3. Here, the F.F. (measured value) is HF gas flow rate/N2 gas flow rate, and the average value of the F.F. shows the average in the set flow rate ranges of 15˜60%.
(Test specimen F115A, Temperature of chamber: 40° C. (fixed))
(Test specimen F115A, Temperature of chamber: 40° C. (fixed))
(Test specimen FII5A-HT, Temperature of chamber: 40° C. (fixed))
(Test specimen F115A-HT, Temperature of chamber: 40° C. (fixed))
FIGS. 3(a) and (b) are the plotted measurement results of the afore-mentioned Table 13-1 to Table 13-4 inclusive. As apparent from
However, it is found that the flow rate error caused by the temperature difference becomes near-zero over the entire area of the set flow rate ranges when the temperature for heating the test specimen 3 reaches about 85° C.
That is, as found from the results in
As apparent from
The afore-mentioned test results have revealed the followings:
{circle around (1)} Sufficient flow rate control of the HF gas over the flow rate ranges of 3˜100 SCCM can be achieved by appropriately heating the pressure type flow rate control. (Table 4-1˜Table 6-1)
{circle around (2)} The pressure type flow rate control device can be heated to 40° C.˜85° C. 50° C. is the guaranteed temperature for the substrate or the base plate (on which electronic components are mounted) inside the test specimen. This means that if the temperature for heating the pressure type flow rate control device is 45° C., it is lower than the guaranteed temperature of 50° C. This indicates that the pressure type flow rate control device with no special heat-resistance can serve sufficiently for the flow rate control of the HF gas. (Table 1˜Table 4)
{circle around (3)} When the measurement of the same flow rate was effected using two types of test specimens having different flow rate ranges, the flow rate error of the HF gas is found to be 0.8 SCCM at the maximum. (F115A-42.4% and F65A-75% Table 8)
{circle around (4)} There is almost no problem about the linearity of the flow rate measurement characteristics. (
The average value of the measured flow factor F.F is 1.1653, which is almost the same for the all set ranges. (Table 7)
{circle around (5)} With regard to the flow rate linearity at a certain set flow rate range, calculation at each build-up pressure interval (20 Torr) used for the flow rate calculation reveals that the error of the flow rate linearity at each interval was lower than +0.6%˜−0.4%, thus no problem regarding the linearity. (table 11 and Table 12)
{circle around (6)} In the event that the temperature for heating the test specimen 3 was set at 45±2° C., it is found that the flow rate error was less than 2.4 SCCM (at the time when heated to 45˜47° C.: a flow rate setting of 75%). However, in the event that the heating temperature was set at 85±2° C. using the test specimen for high temperature, it was found that the flow rate error was less that 0.1 SCCM (at the time when heated to 83˜85° C.: a flow rate setting of 15%). (Table 13-1˜4)
Also, the technical literature study has revealed that the molecular weight of the HF gas is 20 g/mol at the time of 76 Torr with the temperature higher than 25° C. and 760 Torr with the temperature higher than 80° C., and also that the association heat of 6 HF molecules is 40,800 cal/mol. Accordingly, it is assumed that at the time of the flow rate control of the HF gas, the flow rate control can be conducted by heating the gas to the temperature higher than 65° C. (with the upper limit setting of 75%) as expressed by the formula.
There is no need to say that the afore-mentioned basic concepts in accordance with the present invention can apply to the flow rate control of the HF gas using the mass flow control device and the like.
With the present invention, the upper limit for heating the temperature of the pressure type flow rate control device is set at 85° C. This is because when the temperature goes up higher than 85° C., dependency of the molecular association of the HF gas on the pressure/temperature is gone.
With the afore-mentioned mode of carrying out the invention, the case was discussed where the clustering of fluid can be prevented by raising the temperature of the clustering fluid. However, it should be noted that the clustering of the clustering fluid depends not only on the temperature but also on the pressure. Therefore, the clustering of the clustering fluid can be prevented by diluting the clustering fluid to a level lower than a partial pressure by adding the diluting gas.
That is, as illustrated in
In
With the present invention, the clustering fluid such as the HF gas and the like to be flow-rate controlled is passed through the orifice in a state where the pressure type flow rate control device is heated to the temperature not lower than 40, or the clustering fluid such as the HF gas and the like to be flow-rate controlled is passed through an orifice in a state where the pressure of the fluid is made lower than a partial pressure by adding the diluting gas so that the molecules of the fluid are permitted to turn monomolecular. As a result, the molecular association of the clustering fluid or the endothermic amount at the time of dissociation will not be influenced by the pressure of the clustering fluid such as the HF gas and the like. As a result, the flow rate of the clustering fluid such as the HF gas and the like can be controlled using the pressure type flow rate control device with high precision and stability as in the case of the flow rate control of normal gases such as the O2 gas or the N2 gas.
In addition, by keeping the heating temperature relatively low like between 40° C.˜85° C., adverse effects on the electronic components used in the pressure type flow rate control device can be easily avoided. Therefore, the manufacturing costs of the pressure type flow rate control device are not expected to increase.
Furthermore, in the event that the pressure level of the chamber to which the clustering fluid such as the HF gas and the like is supplied is 10−2˜102 Torr, the high precision flow rate control of the clustering fluid such as the HF gas and the like can be achieved over the flow rate range of 3˜300 SCCM. This makes it possible to substantially lower the running costs and equipment costs compared with the conventional case where a great amount of diluting gas is used.
As explained above, by making use of the flow factor F.F. of the clustering fluid based on the N2 gas, the present invention can easily achieve the practical effect that the high precision flow rate control of the clustering fluid is made possible using the known and widely used pressure type flow rate control device.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2003-010162 | Jan 2003 | JP | national |
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP04/00346 | Jan 2004 | US |
| Child | 11182762 | Jul 2005 | US |
