Method for forming conformal carbon films, structures conformal carbon film, and system of forming same

Abstract

Methods of forming carbon films, structures and devices including the carbon films, and systems for forming the carbon films are disclosed. A method includes depositing a metal carbide film using atomic layer deposition (ALD). Metal from the metal carbide film is removed from the metal carbide film to form a carbon film. Because the films are formed using ALD, the films can be relatively conformal and can have relatively uniform thickness over the surface of a substrate.

Description

FIELD OF INVENTION

The present disclosure generally relates to methods and systems for forming carbon films. More particularly, the disclosure relates to methods suitable for forming conformal carbon films, to structures and devices including the carbon films, and to systems for forming the films.

BACKGROUND OF THE DISCLOSURE

Carbon films can exhibit a variety of desirable properties and therefore can be used for a variety of applications. For example, carbon films can be used for electrical energy storage, methane storage, hydrogen storage, as battery components (e.g., as anode material in a lithium-ion cell), as catalyst material or a catalyst support, for coatings, for microelectronic applications (e.g., logic devices, capacitors, or as hard masks), and for carbon nanotube and nanocrystal applications.

The carbon films are typically formed using chemical vapor deposition (CVD) or physical vapor deposition (PVD) techniques. Although such techniques can work relatively well for some applications, it can be relatively difficult to control the structure, morphology, and thickness of the deposited layers. Moreover, typical techniques for depositing carbon are not suitable for forming conformal films over high aspect ratio features.

Recently, techniques have been developed to form carbon films by depositing a metal carbide layer using CVD or PVD techniques and then exposing the metal carbide layer to chlorine or another reactant to remove the metal from the metal carbide film. Such techniques produce carbon films that generally follow the original shape or form of the initial metal carbide film. The CVD and PVD methods used to form the metal carbide films generally suffer from the same deficiencies of typical methods used to deposit carbon films, namely, the thickness of the deposited films is relatively difficult to control, and such techniques do not lend themselves to formation of conformal films, especially when formed overlying high-aspect ratio features. Accordingly, improved methods and systems to form conformal carbon layers and structures and devices including the layers are desired.

SUMMARY OF THE DISCLOSURE

Various embodiments of the present disclosure relate to methods of forming carbon films, structures and devices including the carbon films, and systems for forming the carbon films. While the ways in which various embodiments of the present disclosure address drawbacks of prior techniques for forming carbon films are discussed in more detail below, in general, the present disclosure provides methods of forming conformal carbon films—e.g., over large aspect ratio features on a substrate—with tight control of film thickness over a surface of the substrate.

In accordance with exemplary embodiments of the disclosure, a method of forming a carbon film includes the steps of providing a substrate, depositing, using atomic layer deposition (ALD), a layer of metal carbide onto the substrate, and removing metal from the layer of metal carbide to form a layer of carbon on the substrate. Because the exemplary methods use ALD deposition techniques to deposit the metal carbide, monolayer thickness control of the deposited metal carbide and thus the resulting carbon film can be achieved, even when the carbon films are formed over high aspect ratio features. In accordance with various aspects of these embodiments, the deposited films are at least 80, 90, or 95 percent conformal when deposited over features having an aspect ratio greater than or equal to 10, 15, or 20, and may be conformal to within one monolayer over features having these aspect ratios. In accordance with further aspects of these embodiments, the step of removing metal from the layer of metal carbide includes exposing the metal carbide to a halogen gas that does not etch carbon, such as a gas selected from the group consisting of chlorine, bromine, and iodine. The halogen gas may be exposed to a direct or an indirect plasma or to thermal excitation to form, for example, excited species of chlorine, bromine, and/or iodine. In accordance with yet further aspects of these embodiments, the step of removing metal from the layer of metal carbide can be performed after every deposition cycle of the step of depositing, after a predetermined number of deposition cycles, after a predetermine time, or after a predetermined thickness of the metal carbide layer is deposited. The step of removing metal can be performed in-situ in the same reactor chamber used to deposit the layer of metal carbide—e.g., such that the substrate is not exposed to a vacuum break between the step of depositing and the step of removing. In accordance with yet further exemplary aspects of these embodiments, a duration of the step of removing metal from the layer of metal carbide is determine by monitoring etch products within the reactor chamber and/or by determining an endpoint for the process step. Various examples of these exemplary methods can be used to form thin films of carbon (e.g., 10 monolayers or less, 5 monolayers or less, 2 monolayers, or one monolayer). In accordance with further aspects of these embodiments, the step of depositing includes forming a metal carbide layer at a temperature of about 350° C. or less. In accordance with some exemplary aspects of these embodiments, the substrate is a sacrificial substrate, which is removed after the metal carbide deposition step. In these cases, the method can be used to form, for example, thin-walled carbon nanotubes or similar structures. Exemplary methods can also include an annealing step (e.g., in the presence of nitrogen, hydrogen, and/or ammonia) to alter or transform the structure of the carbon film.

In accordance with additional exemplary embodiments of the disclosure, a structure includes a substrate and a carbon film formed, for example, using atomic layer deposition to deposit a layer of metal carbide onto the substrate and then removing metal from the metal carbide layer. In accordance with exemplary aspects of these embodiments, a thickness of the carbon layer is less than or equal to 10 monolayers, less than or equal to 5 monolayers, less than 2 monolayers, or about one monolayer. The substrate can include features having aspect ratio greater than or equal to 5, greater than or equal to 10, greater than or equal to 15, or greater than or equal to 20. In accordance with various exemplary aspects, the carbon layer is deposed overlying features on the substrate and the carbon layer is at least 80% or at least 90% or at least 95% conformal over the substrate, including the features. In accordance with further aspects, the carbon layer can be substantially amorphous, include carbon nanocrystals, or include ordered graphite structures.

Exemplary structures can be formed using a sacrificial substrate, which is removed or substantially removed during processing. In these cases, the substrate and the carbon film can initially have any of the attributes described above. Structures formed using a sacrificial substrate can include carbon nanotubes or the like.

In accordance with yet further exemplary embodiments of the disclosure, a device includes a structure as described herein. Exemplary devices can include carbon films, e.g., carbon films that are formed as described herein, that can be used to store energy, as low dielectric constant films in semiconductor devices, as carbon hard masks, as wear-resistant layers, or the like.

In accordance with yet additional embodiments of the disclosure, a system includes an atomic layer deposition reactor.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

A more complete understanding of the embodiments of the present disclosure may be derived by referring to the detailed description and claims when considered in connection with the following illustrative figures.

FIG. 1 illustrates a method of forming a carbon film in accordance with exemplary embodiments of the disclosure.

FIG. 2 illustrates a system for forming a carbon film in accordance with exemplary embodiments of the disclosure.

FIG. 3 illustrates a structure including a carbon film in accordance with exemplary embodiments of the disclosure.

FIGS. 4-6 illustrate steps of forming a carbon layer over a sacrificial substrate in accordance with exemplary embodiments of the disclosure.

FIG. 7 illustrates a carbon nanotube in accordance with further exemplary embodiments of the disclosure.

FIGS. 8-11 illustrate a method of forming a conformal carbon layer overlying a feature on a substrate in accordance with yet additional exemplary embodiments of the disclosure.

It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve the understanding of illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS OF THE DISCLOSURE

The description of exemplary embodiments of methods, structures, devices, and systems provided below is merely exemplary and is intended for purposes of illustration only; the following description is not intended to limit the scope of the disclosure or the claims. Moreover, recitation of multiple embodiments having stated features is not intended to exclude other embodiments having additional features or other embodiments incorporating different combinations of the stated features.

The present disclosure generally relates to methods of forming carbon films, to structures and devices including the carbon films, and to systems for forming the carbon films. As set forth in more detail below, carbon films formed in accordance with embodiments of the present disclosure can be used for a variety of applications, including dielectric or capacitor plate layers in microelectronic devices, in energy storage devices, in carbon nanotube applications, as wear-resistant films, as hard masks, and the like.

FIG. 1 illustrates a method 100 of forming a carbon film in accordance with exemplary embodiments of the disclosure. Method 100 includes the step of providing a substrate (step 102), depositing a layer of metal carbide onto the substrate (step 104), removing metal from the metal carbide (step 106), and optionally annealing the carbon film (step 108). Method 100 is particularly well suited for forming conformal carbon films overlying a substrate.

During step 102, one or more substrates are provided within a reaction chamber of a reactor, such as a reaction chamber 204, described in more detail below. As used herein, a “substrate” refers to any material having a surface onto which a carbon film can be deposited. A substrate may include a bulk material such as silicon (e.g., single crystal silicon), a sacrificial substrate, such as a ceramic or a polymer, and may include one or more layers overlying the bulk material. Further, the substrate may include various features, such as trenches, vias, lines, and the like formed within or on at least a portion of the substrate. The features can have an aspect ratio, defined as a feature's height divided by the feature's width, of, for example greater than or equal to 5, greater than or equal to 10, greater than or equal to 15, or greater than or equal to 20. Pre-deposition reactor conditions, such as substrate temperature, reaction chamber pressure, and the like can be set at step 102.

At step 104, a metal carbide layer is deposited onto the substrate using atomic layer deposition. Although use of atomic layer deposition may be a relatively slow process for forming metal carbide layers, using atomic layer deposition to deposit the metal carbide has several advantages over prior art techniques to form carbon films. For example, atomic layer deposition allows for relatively conformal deposition of the metal carbide layer over features having the aspect ratios noted above, and reaction temperatures (e.g., substrate temperatures) can be relatively low—e.g., less than 500° C. or less than 350° C. Exemplary carbide layers are greater than or equal to 80 percent conformal over the features, greater than or equal to 85 percent, greater than or equal to 90 percent, greater than or equal to 95 percent or greater than or equal to 99 percent conformal over features having an aspect ratio equal to or greater than 10, 15, and 20.

A thickness of the metal carbide layer deposited during step 104 can vary according to application. By way of examples, less than or equal to 10, less than or equal to 5, less than or equal to 2, or one monolayer can be deposited during step 104. However, the disclosure is not restricted to such number of layers or layer thicknesses, unless otherwise noted.

A variety of metal carbides can be deposited during step 104. By way of examples, the metal carbide film can include one or more of TiAlC, NbC, VC, HfC, ZrC, TaC, MoC, WC, BaC, SrC, SiC, AlC, FeC and ternary mixtures or any combination thereof.

The process conditions during step 104 can vary depending on the metal carbide layer deposited onto the substrate. By way of examples, a temperature during step 104 can range from about 100° C. to about 500° C., or as noted above, be less than 500° C. or less than 350° C., and a pressure can range from about 50 mTorr to about 600 Torr.

After a metal carbide layer is deposited onto a substrate during step 104, metal from the metal carbide layer is removed during step 106. Step 106 can be performed in the same reaction chamber as step 104, e.g., without a vacuum break between steps, or step 106 can be performed in a separate reaction chamber that can be, for example, part of the same cluster tool as the reaction chamber used for step 104. When steps 104 and 106 are performed in the same reaction chamber, steps 104 and 106 can operate at the same or substantially same operating pressure and operating temperature.

A halogen gas that does not etch carbon or significantly etch carbon, such as a gas selected from the group consisting of chlorine, bromine, and iodine, can be used to etch or remove the metal from the metal carbide. The gas, e.g., chlorine, bromine, and/or iodine, can be thermally and/or plasma (direct or remote) activated to increase the activity of the etch reactant gas. In these cases, the etch reactant can include a combination of molecules, radicals and/or ions including, for example, chlorine, bromine, and/or iodine. By way of example, chlorine gas at a flow rate of about 500 sccm, at a pressure of about 1 Torr and a temperature of about 350° C., for a period of about 10 seconds can be used to remove metal from a metal carbide layer having a thickness of about 50 Å.

Step 106 can be performed after a number of ALD cycles performed during step 104 (e.g., 1, 2, 5, 10, 15, 20, or more cycles), after a predetermined thickness of metal carbide is deposited during step 104, or after a predetermined amount of time for step 104. Additionally, method 100 can include repeating steps 104, 106 a desired number of times before proceeding to optional step 108 or to completion.

At optional step 108, the metal-depleted carbon film is exposed to an anneal process to, e.g., alter a structure of the carbon film. By way of examples, step 108 can be performed at a temperature of about 150 degrees C. to about 1200 degrees C. or about 200 degrees C. to about 400 degrees C. in, for example, a nitrogen, hydrogen, and/or ammonia environment or any other suitable reducing environment including hydrazine or hydrazine derivatives. The carbon films can be transformed, for example, from an amorphous structure to a nanocrystalline graphite structure or an ordered graphite structure.

Turning now to FIG. 2, a system 200 for forming a carbon film is illustrated. System 200 includes a reactor 202, including reaction chamber 204, a substrate holder 206, and a gas distribution system 208; a first ALD reactant source 210; a second ALD reactant source 212; a carrier or purge gas source 214; lines 216, 218, 220 connecting sources 210-214 to reactor 202; valves 222, 224 and 226 interposed between the sources 210-214 and reactor 202; etch reactant source 230, coupled to reactor 202 and gas distribution system 208, via a line 232 and a valve 234; and a vacuum source 228.

Reactor 202 may be a standalone reactor or part of a cluster tool. Further, reactor 202 may be dedicated to metal carbide material deposition and optionally a metal removal processes as described herein, or reactor 202 may be used for other processes—e.g., for other layer deposition and/or etch processing. Reactor 202 is a reactor suitable for ALD deposition. An exemplary ALD reactor suitable for system 200 is described in U.S. Pat. No. 8,152,922 to Schmidt et al., issued Apr. 10, 2012, entitled “Gas Mixer and Manifold Assembly for ALD Reactor,” the contents of which are hereby incorporated herein by reference, to the extent such contents do not conflict with the present disclosure.

Substrate holder 206 is designed to hold a substrate or workpiece 230 in place during processing. In accordance with various exemplary embodiments, holder 206 may form part of a direct plasma circuit. Additionally or alternatively, holder 206 may be heated, cooled, or be at ambient process temperature during processing.

Although gas distribution system 208 is illustrated in block form, gas distribution system 208 may be relatively complex and designed to mix vapor (gas) from sources 210, 212 and/or 214 and carrier/purge gas from one or more sources, such as gas source 214, prior to distributing the gas mixture to the remainder of reactor 202. Further, system 208 can be configured to provide vertical (as illustrated) or horizontal flow of gasses to reaction chamber 204. An exemplary gas distribution system is described in U.S. Pat. No. 8,152,922.

First reactant source 210 can include any source used to deposit, using ALD, a metal carbide. By way of examples, source 210 can include trimethylaluminum (TMA), triethylaluminum (TEA), or any other suitable metal carbide, transition metal carbide, or other suitable source.

Similarly, second reactant source 212 can include a second reactant used to deposit metal carbide material using ALD. By way of examples, source 212 can include titanium chloride (e.g., TiCl₄) or any other suitable source.

Carrier or inert source 214 includes one or more gases, or materials that become gaseous, that are relatively unreactive in reactor 202. Exemplary carrier and inert gasses include nitrogen, argon, helium, and any combinations thereof.

Etch reactant source 230 includes one or more gases, or materials that become gaseous. Source 230 can include any halide that does not etch carbon, such as one or more gasses including for example, chlorine, bromine, iodine or molecules comprising chlorine, bromine and/or iodine. Gas from source 230 may be exposed to a thermal and/or remote plasma and/or direct plasma source to form activated species, such as ions and/or radicals including one or more of chlorine, bromine, and iodine.

FIG. 3 illustrates a structure 300, which can be formed, for example, using method 100 and/or system 200. Structure 300 includes a substrate 302 and a carbon layer 304 formed by using ALD to conformally deposit a metal carbide layer and removing metal from the metal carbide layer. Before an anneal process, layer 304 can include amorphous carbon material. After an anneal process, the layer can transform and include nanocrystalline graphite, ordered graphite, diamond-like structures, fullerenes, or the like. In addition, the optical and/or electrical properties of layer 304 can be transformed during an anneal process to obtain desired properties for layer 304. For example, when layer 304 contains graphite, the layer can be conductive and used to form capacitor plates in microelectronic devices. A monolayer of graphite (graphene) can be used for microelectronic logic and capacitor application.

As noted above, exemplary techniques described herein can be used to form a carbon layer overlying a sacrificial substrate, to form, for example a nanotube 700, illustrated in FIG. 7. A method of forming a carbon layer over a sacrificial substrate is illustrated in FIGS. 4-6. The method begins with providing a sacrificial substrate 400. A layer of conformal metal carbide 500, illustrated in FIG. 5, is then deposited onto sacrificial substrate 400, using for example, the techniques described above with step 104 in connection with FIG. 1.

In this case, the thickness of the metal carbide layer can between about 1 and 10 monolayers or between about 1 and 5 monolayers. Because the metal carbide layer is deposited onto sacrificial substrate 400, a deposition temperature during the step of depositing the metal carbide onto the sacrificial substrate can desirably be relatively low—e.g., less than 500° C., less than 400° C., less than 350° C., or about 100° C. to about 500° C.

A material for sacrificial substrate 400 can vary is accordance with a desired structure for the resulting carbon film. By way of examples, sacrificial substrate material can include polymers or aluminum oxide (e.g., anodic aluminum oxide). Advantageously, utilizing a polymer substrate material can be easily accomplished with sub-250 degree C. process temperatures in accordance with various examples of the present disclosure.

After metal carbide layer 500 is formed overlying sacrificial substrate 400, metal is removed from layer 500 to form a metal-depleted carbon layer 600, illustrated in FIG. 6. The method to remove the metal from layer 500 can be the same or similar to step 106, described above in connection with FIG. 1.

After metal carbide layer 500 is deposited onto sacrificial substrate 400, substrate 400 can be removed—e.g., etched or dissolved. The removing step can occur during the metal removal step or can occur subsequent to the metal removal step, as illustrated in FIGS. 6 and 7 to form nanotube 700. Although illustrated with capped or closed ends 702, 704, nanotube structures in accordance with the present disclosure can have one or more open ends.

Turning now to FIGS. 8-11, a method of forming a structure including a carbon film overlying a high aspect ratio feature is illustrated. The method begins with providing a substrate 802, having a feature 804 having a high aspect ratio, as illustrated in FIG. 8. Substrate 802 can include any of the substrate materials described herein. The aspect ratio of feature 804 can be, for example, greater than or equal to 5, greater than or equal to 10, greater than or equal to 15, or greater than or equal to 20. Although illustrated as a trench or via, substrate 802 can additionally or alternatively include lines or other protrusions having the same or similar aspect ratios.

Structure 900, illustrated in FIG. 9, is formed by depositing a metal carbide film 902 over substrate 802, for example using the method described above in connection with step 104. As noted above, even with aspect ratios of 20 or higher, layer 902, in accordance with exemplary embodiments, is 80 percent, 85, percent, 90 percent, 95 percent, 99 percent or more conformal over the surface of substrate 802, including within feature 804. By way of examples, layer 902 can be conformal to within 2 or to within 1 monolayer of metal carbide material.

Structure 1000 is then formed by removing metal from metal carbide layer 902 to form layer 1002, illustrated in FIG. 10. The metal can be removed using techniques described herein, such as those described in connection with step 106.

Then, structure 1100 is formed by annealing layer 1002 to form restructured carbon layer 1102, illustrated in FIG. 11. Layer 1102 can include graphene, nanocrystalline graphite, or ordered graphite.

Devices, such as microelectronic devices can include a structure as described herein—e.g., structure 300, 700, or 1100. By way of particular examples, a microelectronic device includes structure 1100, wherein layer 1102 can form a capacitor plate or a dielectric layer. Alternatively, an energy storage device includes an exemplary structure as described herein.

Although exemplary embodiments of the present disclosure are set forth herein, it should be appreciated that the disclosure is not so limited. For example, although the system and method are described in connection with various specific chemistries, the disclosure is not necessarily limited to these examples. Further, although methods are illustrated in a particular sequence, the method is not limited to such sequence of steps, unless indicated herein to the contrary. Various modifications, variations, and enhancements of the system and method set forth herein may be made without departing from the spirit and scope of the present disclosure.

The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts, and/or properties disclosed herein, as well as any and all equivalents thereof.

Claims

1. A method of forming a carbon film, the method comprising the steps of: providing a substrate;depositing, using atomic layer deposition (ALD), a first layer of metal carbide onto the substrate;in a reaction chamber having a pressure in the range of about 50 mTorr to about 600 Torr and having a temperature less than 500° C., removing by etching metal from the layer of metal carbide to form a layer of carbon on the substrate,wherein the step of removing metal is performed after one or more ALD cycles to form the layer of carbon and the method further comprises a step of depositing, using ALD, a second layer of metal carbide over the layer of carbon.

2. The method of forming a carbon film of claim 1, wherein the step of providing a substrate comprises providing a substrate comprising features having an aspect ratio greater than or equal to 10.

3. The method of claim 2, wherein the aspect ratio is greater than or equal to 15.

4. The method of claim 1, wherein the step of providing a substrate comprises providing a sacrificial substrate.

5. The method of claim 1, wherein the step of removing metal comprises exposing the metal carbide to one or more halogen gases selected from the group consisting of chlorine, bromine and iodine.

6. The method of claim 1, wherein the step of removing metal comprises exposing the metal carbide to a plasma excited species containing one or more of plasma-excited chlorine, plasma-excited bromine and plasma-excited iodine.

7. The method of claim 1, wherein the temperature is less than 350° C.

8. The method of claim 1, wherein the step of removing metal is performed after 20 or more ALD cycles.

9. The method of claim 1, wherein the step of depositing and the step of removing metal by etching are performed in the same reaction chamber without breaking vacuum between the steps.

10. The method of claim 1, wherein a duration of the step of removing is determined by monitoring an endpoint for the removing metal step.

11. The method of claim 1, wherein a duration of the step of removing is determined by monitoring etch products during the step of removing metal.

12. The method of claim 1, wherein the step of depositing the first layer comprises depositing ten monolayers or less of the metal carbide.

13. The method of claim 1, further comprising a step of exposing the layer of carbon to an anneal process after the step of removing metal from the layer of metal carbide.

14. The method of claim 13, wherein the anneal process is performed in an environment comprising one or more gases selected from the group consisting of nitrogen, hydrogen, ammonia, hydrazine and hydrazine derivatives.

15. The method of claim 13, wherein a structure of the layer of carbon is transformed during the anneal process.

16. The method of claim 2, wherein the aspect ratio is greater than or equal to 20.

17. The method of claim 1, wherein the step of removing is performed after each ALD cycle.

18. The method of claim 13, wherein a temperature during the anneal process ranges from about 150° C. to about 1200° C.

19. The method of claim 13, wherein a temperature during the anneal process ranges from about 200° C. to about 400° C.

20. The method of claim 5, wherein the one or more halogen gases are exposed to a direct plasma, an indirect plasma, or a thermal excitation.