Claims
- 1. A method of forming an electrical contact to a common electrode of an infrared detector, said method comprising:
- forming thermal isolation trenches in a substrate;
- depositing a first trench filler in said thermal isolation trenches;
- forming bias contact areas around a periphery of said substrate;
- depositing a common electrode layer over said substrate, said thermal isolation trenches and said bias contact areas;
- thinning said substrate to expose said bias contact areas and said trench filler;
- depositing a contact metal on said backside of said substrate, said exposed trench filler and said exposed bias contact areas; and
- etching said contact metal and said trench filler to form pixel mesas of said contact metal and said substrate.
- 2. The method of claim 1, wherein said forming thermal isolation trenches and said forming bias contact areas include laser vaporization.
- 3. The method of claim 1, wherein said forming thermal isolation trenches include ion milling.
- 4. The method of claim 1, wherein said method further includes planarizing said first trench filler after depositing said first trench filler.
- 5. The method of claim 1, wherein said method further includes depositing an optical coating after said depositing of said common electrode.
Parent Case Info
This application is a continuation of U.S. Ser. No. 08/397,512, filed Mar. 1, 1995, now U.S. Pat. No. 5,577,309.
US Referenced Citations (8)
Continuations (1)
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Number |
Date |
Country |
Parent |
397512 |
Mar 1995 |
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