Claims
- 1. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure comprising the steps of:positioning a preprocessed semiconductor substrate in a sputtering chamber; flowing Ar gas into said sputtering chamber; sputter depositing a first refractory metal-silicon nitrogen layer on said substrate; flowing N2 gas into said sputtering chamber such that concentration of said N2 gas in said chamber is at least 35% by adjusting the flow or partial pressure of N2; sputter depositing a second refractory metal-silicon-nitrogen layer on top of said first refractory metal-silicon nitrogen layer; stopping said N2 gas flow into said sputter chamber; sputter depositing a third refractory metal-silicon-nitrogen layer on top of said second refractory metal-silicon-nitrogen layer; and photolithographically forming said first, second and third refractory metal-silicon-nitrogen layers into a capacitor.
- 2. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure according to claim 1 further comprising the step of in-situ annealing said capacitor at a temperature of at least 80° C.
- 3. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure according to claim 1 further comprising the step of flowing said Ar gas into said sputter chamber at a flow rate between about 10 sccm and about 200 sccm.
- 4. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure according to claim 1 further comprising the step of flowing said N2 gas into said sputter chamber at a flow rate between about 1 sccm and about 100 sccm.
- 5. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure according to claim 1 further comprising the step of sputter depositing said first and said third refractory metal-silicon-nitrogen layer to a thickness of between about 100 Å and about 5000 Å.
- 6. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure according to claim 1 further comprising the step of sputter depositing said second refractory metal-silicon-nitrogen layer to a thickness of between about 100 Å and about 5000 Å.
- 7. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure according to claim 1 further comprising the step of sputter depositing said first and said third refractory metal-silicon-nitrogen layer each having a sheet resistance of not higher than 50 ohm/sq.
- 8. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure according to claim 1 further comprising the step of sputter depositing said second refractory metal-silicon-nitrogen layer which has a dielectric constant greater than 7.5.
- 9. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure according to claim 1 further comprising the step of sputter depositing said first, second and third refractory metal-silicon-nitrogen layers formed of a refractory metal selected from the group consisting of Ta, Nb, V, W and Ti.
- 10. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure according to claim 1 further comprising the step of sputter depositing said first, second and third refractory metal-silicon-nitrogen layers from a sputtering target of refractory metal silicide.
- 11. A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure according to claim 1 further comprising the step of sputter depositing said first, second and third refractory metal-silicon-nitrogen layers from two sputtering targets of a refractory metal and a silicon.
CROSS-REFERENCE TO RELATED APPLICATION
This application is cross-referenced to Ser. No. 09/760,245, filed Jan. 12, 2001, which is directed to a semiconductor device incorporating elements of refractory metal-silicon-nitrogen and method for fabrication.
US Referenced Citations (12)
Foreign Referenced Citations (1)
Number |
Date |
Country |
2000200877 |
Jul 2000 |
JP |