Claims
- 1. A manufacturing method for a semiconductor device, comprising the steps of:
- forming a first impurity diffused layer of a first conduction type in a semiconductor substrate;
- forming a first conducting film connected to said first impurity diffused layer;
- forming a first insulating film on said first conducting film;
- forming a first hole through said first insulating film and said first conducting film;
- forming a second impurity diffused layer of said first conduction type connected to said first impurity diffused layer in said semiconductor substrate;
- selectively forming a second conducting film on a side surface of said first conducting film and on said semiconductor substrate exposed in said first hole;
- forming a side wall with a second insulating film in said first hole to form a second hole leading through said first impurity diffused layer to said semiconductor substrate;
- forming a side wall from a third insulating film in said second hole to form a third hole;
- forming a third conducting film in said third hole;
- doping said third conducting film with an impurity of said first conduction type;
- forming a third impurity diffused layer of said first conduction type in said semiconductor substrate by impurity diffusion from said third conducting film doped with said impurity of said first conduction type;
- doping said third conducting film with an impurity of a second conduction type; and
- forming a fourth impurity diffused layer of said second conduction type in said third impurity diffused layer by impurity diffusion from said third conducting film doped with said impurity of said second conduction type.
- 2. A manufacturing method for a semiconductor device according to claim 1, wherein said step of selectively forming said second conducting film comprising forming a refractory metal film at a bottom of said first hole, on side walls of said first hole, and on said first insulating layer, performing a heat treatment to make only a portion of said refractory metal film on said side surface of said first conducting film and on said semiconductor substrate exposed by said first hole into a refractory metal silicide film, and removing a remaining portion of said refractory metal film from said first insulating film.
- 3. A manufacturing method for a semiconductor device according to claim 2, wherein said refractory metal film comprises a titanium film.
- 4. A manufacturing method for a semiconductor device according to claim 1, wherein said step of selectively forming said second conducting film comprises selectively forming by CVD a refractory metal film only on said side surface of said first conducting film and on said semiconductor substrate exposed by said first hole.
- 5. A manufacturing method for a semiconductor device according to claim 4, wherein said refractory metal film comprises a tungsten film selectively formed by CVD.
- 6. A manufacturing method for a semiconductor device according to claim 1, wherein said first conducting film comprises a boron doped polysilicon film and a refractory metal silicide film laminated together.
- 7. A manufacturing method for a semiconductor device according to claim 1, wherein said first impurity diffused layer comprises a base of a bipolar transistor; said third impurity diffused layer comprises a base of said bipolar transistor; and said fourth impurity diffused layer comprises an emitter of said bipolar transistor.
Priority Claims (8)
Number |
Date |
Country |
Kind |
5-062982 |
Feb 1993 |
JPX |
|
5-062985 |
Feb 1993 |
JPX |
|
5-098789 |
Mar 1993 |
JPX |
|
5-098791 |
Mar 1993 |
JPX |
|
5-098792 |
Mar 1993 |
JPX |
|
5-098793 |
Mar 1993 |
JPX |
|
5-098795 |
Mar 1993 |
JPX |
|
5-098796 |
Mar 1993 |
JPX |
|
Parent Case Info
This is a division of application Ser. No. 08/196,569, filed Feb. 15, 1994.
US Referenced Citations (7)
Foreign Referenced Citations (8)
Number |
Date |
Country |
63-0289863 |
Nov 1988 |
JPX |
0028959 |
Jan 1989 |
JPX |
0094444 |
Apr 1990 |
JPX |
0105521 |
Apr 1990 |
JPX |
0246338 |
Oct 1990 |
JPX |
3165523 |
Jul 1991 |
JPX |
3224269 |
Oct 1991 |
JPX |
4113627 |
Apr 1992 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
196569 |
Feb 1994 |
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