Bipolar transistors

Industry

CPC
Y10S148/011

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/011Bipolar transistors

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a bipolar transistor with maskless self-aligned e...
- Patent number 9,356,097
- Issue date May 31, 2016
- GLOBALFOUNDRIES Inc.
- David L. Harame
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
BiCMOS process for counter doped collector
- Patent number 6,124,180
- Issue date Sep 26, 2000
- Intel Corporation
- Stephen T. Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making bipolar having graded or modulated collector
- Patent number 6,001,701
- Issue date Dec 14, 1999
- Lucent Technologies Inc.
- Michael Scott Carroll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing heterojunction bipolar device having Si.sub...
- Patent number 5,915,186
- Issue date Jun 22, 1999
- Sony Corporation
- Takayuki Gomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned poly emitter bipolar technology using damascene technique
- Patent number 5,904,536
- Issue date May 18, 1999
- National Semiconductor Corporation
- Christopher S. Blair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for making bipolar device having double polysi...
- Patent number 5,856,228
- Issue date Jan 5, 1999
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a walled-emitter transistor
- Patent number 5,846,868
- Issue date Dec 8, 1998
- Integrated Device Technology, Inc.
- Chuen-Der Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high voltage, junction isolation semiconductor dev...
- Patent number 5,837,553
- Issue date Nov 17, 1998
- Harris Corporation
- Lawrence G. Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming bipolar transistor having a reduced base transit...
- Patent number 5,824,589
- Issue date Oct 20, 1998
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making n-channel or p-channel permeable base transistor...
- Patent number 5,814,548
- Issue date Sep 29, 1998
- Forschungszentrum Julich GmbH
- Jurgen Graber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection in integrated circuits, systems...
- Patent number 5,804,861
- Issue date Sep 8, 1998
- Texas Instruments Incorporated
- Jerald G. Leach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for making bipolar device
- Patent number 5,643,806
- Issue date Jul 1, 1997
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection in integrated circuits, systems...
- Patent number 5,640,299
- Issue date Jun 17, 1997
- Texas Instruments Incorporated
- Jerald G. Leach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection in integrated circuits, systems...
- Patent number 5,637,892
- Issue date Jun 10, 1997
- Texas Instruments Incorporated
- Jerald G. Leach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection in integrated circuits, systems...
- Patent number 5,629,545
- Issue date May 13, 1997
- Texas Instruments Incorporated
- Jerald G. Leach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully walled emitter-base in a bipolar transistor
- Patent number 5,614,758
- Issue date Mar 25, 1997
- Hewlett-Packard Company
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stacked barrier-diffusion source and etch stop fo...
- Patent number 5,593,905
- Issue date Jan 14, 1997
- Texas Instruments Incorporated
- F. Scott Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection in integrated circuits, systems...
- Patent number 5,591,992
- Issue date Jan 7, 1997
- Texas Instruments Incorporated
- Jerald G. Leach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Walled-emitter transistor
- Patent number 5,574,305
- Issue date Nov 12, 1996
- Integrated Device Technology, Inc.
- Chuen-Der Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with L-shaped emitter
- Patent number 5,572,063
- Issue date Nov 5, 1996
- National Semiconductor Corporation
- Ali A. Iranmanesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage, junction isolation semiconductor device having dual c...
- Patent number 5,567,978
- Issue date Oct 22, 1996
- Harris Corporation
- Lawrence G. Pearce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having a self emitter contact aligned
- Patent number 5,548,141
- Issue date Aug 20, 1996
- Texas Instruments Incorporated
- Francis J. Morris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Permeable base transistor having laminated layers
- Patent number 5,541,424
- Issue date Jul 30, 1996
- Forschungszentrum Julich GmbH
- Jurgen Graber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making bipolar transistor having double polysilicon stru...
- Patent number 5,541,124
- Issue date Jul 30, 1996
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 5,525,817
- Issue date Jun 11, 1996
- Texas Instruments Incorporated
- Darrell G. Hill
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stacked barrier-diffusion source and etch stop for double polysilic...
- Patent number 5,502,330
- Issue date Mar 26, 1996
- Texas Instruments Incorporated
- F. Scott Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a laterally limited, single-crystal region...
- Patent number 5,498,567
- Issue date Mar 12, 1996
- Siemens Aktiengesellschaft
- Helmut Klose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing isolated semi conductor components in a s...
- Patent number 5,457,338
- Issue date Oct 10, 1995
- Societe pour L'Etude et la Fabrication de Circuits Integres Speciaux EFCIS
- Joseph Borel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing base resistance in epitaxial-based bipolar tran...
- Patent number 5,436,180
- Issue date Jul 25, 1995
- Motorola, Inc.
- Edouard D. de Fresart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of self aligning an emitter contact in a heterojunction bipo...
- Patent number 5,436,181
- Issue date Jul 25, 1995
- Texas Instruments Incorporated
- Francis J. Morris
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BIPOLAR TRANSISTOR WITH MASKLESS SELF-ALIGNED EMITTER
- Publication number 20140374802
- Publication date Dec 25, 2014
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS

Bipolar transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of forming a bipolar transistor with maskless self-aligned e...

BiCMOS process for counter doped collector

Process for making bipolar having graded or modulated collector

Method of manufacturing heterojunction bipolar device having Si.sub...

Self aligned poly emitter bipolar technology using damascene technique

Manufacturing method for making bipolar device having double polysi...

Method for forming a walled-emitter transistor

Method of making high voltage, junction isolation semiconductor dev...

Method for forming bipolar transistor having a reduced base transit...

Process for making n-channel or p-channel permeable base transistor...

Electrostatic discharge protection in integrated circuits, systems...

Manufacturing method for making bipolar device

Electrostatic discharge protection in integrated circuits, systems...

Electrostatic discharge protection in integrated circuits, systems...

Electrostatic discharge protection in integrated circuits, systems...

Fully walled emitter-base in a bipolar transistor

Method of forming stacked barrier-diffusion source and etch stop fo...

Electrostatic discharge protection in integrated circuits, systems...

Walled-emitter transistor

Bipolar transistor with L-shaped emitter

High voltage, junction isolation semiconductor device having dual c...

Bipolar transistor having a self emitter contact aligned

Permeable base transistor having laminated layers

Method for making bipolar transistor having double polysilicon stru...

Bipolar transistor

Stacked barrier-diffusion source and etch stop for double polysilic...

Method for manufacturing a laterally limited, single-crystal region...

Process for manufacturing isolated semi conductor components in a s...

Method for reducing base resistance in epitaxial-based bipolar tran...

Method of self aligning an emitter contact in a heterojunction bipo...

Patents Applicationslast 30 patents

BIPOLAR TRANSISTOR WITH MASKLESS SELF-ALIGNED EMITTER