The present invention is directed to a method for manufacturing a component.
Such methods for manufacturing components are believed to be generally understood. For example, a method for manufacturing semiconductor components is discussed in WO 02/02 458 A1, in a first step a first porous layer being formed in the semiconductor component, and in a second step a cavern being formed beneath or out of the first porous layer in the semiconductor component, and the cavern having an access opening.
Furthermore, a method is discussed in the publications DE 10 2004 036 032 A1 and DE 10 2004 036 035 A1 for manufacturing a semiconductor component having a semiconductor substrate, the semiconductor substrate having a diaphragm, a cavern situated at least beneath the diaphragm, and a first doping, and the diaphragm may have an epitaxial layer and being situated on stabilizing elements provided in particular as webs above at least a portion of the cavern.
The method according to the present invention for manufacturing a component, the method according to the present invention for manufacturing a component system, the component according to the present invention, and the component system according to the present invention according to the other independent claims have the advantage that the electrically conductive first conductive layer, which is situated in the cavern region and/or on the second side, also referred to below as the “back side,” is to be manufactured using a surface wafer process (SMM), so that a back side coating of comparatively thin diaphragms with the first conductive layer is advantageously possible. In addition, due to the use of a standard process this coating may be manufactured comparatively inexpensively in a surface wafer process. Thus, electrical contacting of the component from the back side of the component and/or a comparatively efficient dissipation of process heat on the back side of the component is particularly possible. The term “diaphragm” within the meaning of the present invention is by no means limited to sensor diaphragms, and also includes any layer which may contain a semiconductor material, which is oriented essentially parallel to the main plane of extension, and/or which is comparatively thin perpendicularly to the main plane of extension.
Advantageous embodiments and refinements of the exemplary embodiments and/or exemplary methods of the present invention are provided in the subclaims and in the description with reference to the drawings.
According to one refinement, it is provided that in the second manufacturing step the first conductive layer is also provided on a first side of the diaphragm facing away from the substrate, perpendicularly to the main plane of extension, the first conductive layer on the first side may be partially connected in a electrically conductive manner to the first conductive layer on the second side, and/or the first conductive layer being structured in the second manufacturing step. Thus, contacting of the first side, also referred to below as the “front side,” from the back side of the diaphragm is possible in a particularly advantageous manner, so that, for example, electrical, electronic, and/or micromechanical structures on the front side may be electrically contacted from the back side.
According to another refinement, it is provided that in the first manufacturing step the cavern region is provided with support structures for supporting the diaphragm, in the second manufacturing step the first conductive layer being applied at least partially to the support structures. The diaphragm is thus stabilized in a particularly advantageous manner, so that on the one hand a much thinner diaphragm may be manufactured and covered on the back side with the first conductive layer, and on the other hand the resolution on the diaphragm for lithographic processes in subsequent manufacturing steps is greatly increased, since back-bending of the diaphragm is prevented. In addition, the support structures allow contacting of the front side on the support structures via the first conductive layer. The support points also prevent first conductive layers on the front side, and/or first conductive layers on the back side, and/or first conductive layers on the front side from growing together with first conductive layers on the back side, so that the first conductive layer advantageously includes a plurality of contact areas which are not electrically connected to one another, thus may allow parallel wiring of the diaphragm.
According to another refinement, it is provided that in a third manufacturing step the diaphragm is separated from the substrate, the diaphragm may be being torn away from the substrate, and the support structures particularly may be caused to break by vibration excitation of the substrate, the diaphragm, and/or the support structures. The detachment of the diaphragm from the substrate allows the component to be manufactured in a wafer composite, the components being separated by detaching the diaphragm from the substrate or from the wafer composite. Tearing off the diaphragm from the substrate may eliminate the need for a sawing process, so that in a particularly advantageous manner no contamination of the component and of the remaining wafer composite results from sawing particles. This is particularly advantageous for comparatively fine, open micromechanical structures, such as for the manufacture of acceleration sensors or yaw rate sensors. In addition, it is possible to reuse the substrate or the wafer, the wafer may be freed of metals, ground, and/or polished beforehand.
According to another refinement, it is provided that in a first substep of the first manufacturing step a microelectronic circuit and/or a micromechanical structure is/are produced in the diaphragm and/or on a first side of the diaphragm facing away from the substrate, and/or in a second substep of the first manufacturing step the access opening is/are etched into the cavern region. The diaphragm particularly may include a monocrystalline semiconductor material, in particular monocrystalline silicon, so that an integrated semiconductor circuit may be advantageously provided in the diaphragm which may be contactable from the back side of the diaphragm. Alternatively, a diaphragm made of polysilicon is provided for implementing micromechanical structures in the diaphragm. In a particularly advantageous manner, components may be implemented which, compared to the related art, are significantly less thick perpendicularly to the main plane of extension.
According to another refinement, it is provided that in a third manufacturing step a first insulating layer is provided on the diaphragm, the cavern region, and/or the support structures, the third manufacturing step may be carried out before the second manufacturing step. Thus, an electrically conductive connection between the diaphragm and the first conductive layer, and therefore a short circuit between the various contact areas, is prevented in a particularly advantageous manner.
According to another refinement, it is provided that in the second manufacturing step the first conductive layer is structured by deposition using shadow masks, in particular with the aid of spray coating, in a first substep of the second manufacturing step a photoresist may be applied to the first conductive layer, in a second substep of the second manufacturing step the photoresist being exposed, in a third substep of the second manufacturing step the photoresist being developed, and in a fourth substep of the second manufacturing step the first conductive layer, i.e., the photoresist, being etched. Structuring of the first conductive layer is thus possible in a particularly advantageous manner, so that in particular a plurality of mutually insulated printed conductors in the first conductive layer, and in particular a plurality of mutually insulated electrical contacts between the front side and the back side, is achievable with the aid of the first conductive layer.
According to another refinement, it is provided that in a fourth manufacturing step subsequent to the second manufacturing step a second conductive layer, in particular a galvanic layer, is provided on the first conductive layer. Thus, in an advantageous manner the conductivity is increased, and the electrical resistance, compared to current conduction, is significantly reduced only in the first layer. The efficiency is greatly increased by such back-side metal plating, in particular for the dissipation of process heat from the component.
According to another refinement, it is provided that in the first manufacturing step a wafer composite having a substrate, a plurality of cavern regions, and a plurality of diaphragms is provided, in the third manufacturing step at least one diaphragm being removed for separating the diaphragm from the wafer composite. Thus, in a particularly advantageous manner a plurality of components is produced at the same time on only a single substrate or wafer, and is not separated until the third manufacturing step. A plurality of components may thus be advantageously produced at the same time, and therefore in a particularly cost-effective and time-saving manner.
A further subject matter of the exemplary embodiments and/or exemplary methods of the present invention is a method for manufacturing a component system having a component according to the present invention, in a fifth manufacturing step subsequent to the third manufacturing step the component being provided on a further component and/or on a carrier element, in particular on a printed circuit board and/or in a housing, and may be soldered, bonded, and/or glued, and the component and in particular the integrated circuit and/or the micromechanical structure being electrically contacted with the aid of the first and/or the second conductive layer. Due to the first conductive layer on the back side, butt-jointed soldering, bonding, and/or gluing of the component to the further component and/or to the carrier element, similarly as for a surface mounted device (SMD) component in a surface mounting technology (SMT) method, is possible in a particularly cost-effective manner, since no additional contacting steps for electrically contacting the component are necessary. The contact areas may be directly provided in an electrically conductive manner on connecting surfaces and/or printed conductors of the further component and/or of the carrier element. As a result of providing the component on a what may be a similarly or identically configured further component, a plurality of stacked microchips may be produced in a particularly simple manner, it being advantageously possible to achieve comparatively low stack heights of the stacked microchips due to the comparatively small thicknesses of the diaphragms.
A further subject matter of the present invention is a component, the component having the diaphragm, and the first conductive layer being situated in the cavern region and in particular on the second side. As described above in detail, the component may have a comparatively thin diaphragm, at the same time it being possible to efficiently dissipate heat via the first conductive layer and/or to electrically contact the component from the back side due to the first conductive layer being situated on the back side.
According to one refinement, it is provided that the first conductive layer is also situated on the first side, the first conductive layer may include at least one electrically conductive contact between the first side and the cavern region, and in particular between the first side and the second side. Thus, structures on the front side of the component or of the diaphragm may be electrically contacted from the back side in a particularly advantageous manner, so that, after separation as an SMD component, the component may be mounted, for example, directly on connecting surfaces of a carrier element in an electrically conductive manner.
According to another refinement, it is provided that the diaphragm has a microelectronic circuit and/or a micromechanical structure which may be contacted from the cavern region and/or from the second side, in particular with the aid of the at least one electrically conductive contact. Thus, in a particularly advantageous manner the component may include an integrated microchip and/or a sensor, particularly may be a yaw rate sensor, an acceleration sensor, and/or a pressure sensor.
A further subject matter of the present invention is a component system, the component being situated on the further component and/or on the carrier element, and in particular being soldered, glued, and/or bonded, and the carrier element may include a printed circuit board and/or a housing. The component may be particularly advantageously electrically contacted and controlled in a comparatively simple manner.
According to one refinement, it is provided that the component is situated essentially congruently on the further component, in particular perpendicularly to the main plane of extension, and a further electrically conductive contact of the further component particularly may be connected to the corresponding electrically conductive contact of the component in an electrically conductive manner. Component stacks may thus be formed in a particularly advantageous manner; as a result of the first conductive layer on the back side of each component, the stacked components may be electrically contacted comparatively easily, and the stack height is comparatively small in a particularly advantageous manner due to the comparatively thin diaphragm of each component perpendicularly to the main plane of extension.
Exemplary embodiments of the present invention are illustrated in the drawings and explained in greater detail in the following description.
a shows a schematic side view of a first precursor structure for manufacturing a component according to a first specific embodiment of the present invention.
b shows a schematic top view of a first precursor structure for manufacturing a component according to a first specific embodiment of the present invention.
a shows a schematic side view of a third precursor structure for manufacturing a component according to the first specific embodiment of the present invention.
b shows a schematic top view of a third precursor structure for manufacturing a component according to the first specific embodiment of the present invention.
In the figures, identical parts having reference numerals are always provided with the same reference numerals, and in each case are therefore generally named or mentioned only once.
a and 1b illustrate a schematic side view and a schematic top view, respectively, of a first precursor structure for manufacturing a component according to a first specific embodiment of the present invention, part of the first manufacturing step for partial production of base structure 1′ being illustrated with reference to
b along a first intersecting line 102. The first precursor structure has a partial base structure 1′ in a wafer composite 300 together with further partial base structures 1″, partial base structure 1′ having a substrate 4, a diaphragm 3, and a cavern region 2, and diaphragm 3 being oriented essentially parallel to a main plane of extension 100 of substrate 4, and cavern region 2 being situated between substrate 4 and diaphragm 3. Cavern region 2 also has support structures 5 which extend perpendicularly to main plane of extension 100 and, for supporting diaphragm 3, on a second side 3″, also referred to below as back side 3″, of diaphragm 3 and/or of component 1, diaphragm 3 is connected to substrate 4, so that a plurality of caverns 2′ separated from one another by support structures 5 is formed in cavern region 2, parallel to main plane of extension 100. The shape, number, and position of support structures 5 may be arbitrarily selected, which may be at least one support structure 5′ having a diameter which is essentially equal to the thickness of diaphragm 3 perpendicularly to main plane of extension 100. It is apparent from
a and 3b illustrate a schematic side view and a schematic top view, respectively, of a third precursor structure for manufacturing a component according to the first specific embodiment of the present invention, third precursor structure corresponding to a base structure 1′″ for manufacturing component 1, and the third precursor structure being identical to the second precursor structure illustrated in
Number | Date | Country | Kind |
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10 2008 040 521.3 | Jul 2008 | DE | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/EP2009/057106 | 6/9/2009 | WO | 00 | 3/31/2011 |