TREA

Method for manufacturing a double-sided high-temperature superconducting oxide thin film having large area

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Information

  • Patent Grant
  • 6280580
  • Patent Number
    6,280,580
  • Date Filed
    Monday, November 8, 1999
    25 years ago
  • Date Issued
    Tuesday, August 28, 2001
    23 years ago
Information
Abstract
A method of manufacturing a double-sided high-temperature superconducting oxide thin film comprises the steps of placing two sintered material targets in a thin film deposition chamber; attaching a single crystal oxide substrate to a substrate supporter piercing through a separator of the thin film deposition chamber; rotating the single crystal oxide substrate, placing two substrate heaters toward both surfaces of the single crystal oxide substrate, and heating the single crystal oxide substrate thereby; applying a power to sputter to the sintered material targets; and depositing a target material on both surfaces of the single crystal oxide substrate by having plasma generated from the two sintered material targets contact thereon.
Description




BACKGROUND OF THE INVENTION




1. Field of the Invention




The present invention relates to a method of manufacturing a large-area, double-sided, high-temperature superconducting oxide thin film using a sputtering deposition technique by which a large-area, high-temperature superconducting oxide thin film is formed on the both surfaces of a large-area single crystal oxide substrate.




2. Information Disclosure Statement




In the prior art of sputtering technique, to produce a large-area, high-temperature superconducting oxide thin film of above 2 inches of diameter, various types of production methods have been proposed such as; a method of producing a large-area thin film on a metal plate by rotating a circular plate type target (U.S. Pat. No. 4,866,032), a method of producing a large-area thin film by attaching a target to the outside of a cylindrical type target supporter (U.S. Pat. No. 5,196,400), and a method of producing a large-area thin film by deposition using a hollow rectangular type cathode target and moving a substrate parallel with the surface of the target [H. Koch, et al. Journal of Vacuum Science and Technology A.9(4), 2374 (1991), Th. Schuring, et al. Physica C 262, 89 (1996)]. By these methods, however, a high-temperature superconducting thin film can be deposited only on one surface of a large-area single crystal substrate.




To apply a high-temperature superconducting thin film to a digital electronic device and a microwave device, however, it is essential to develop a technique by which a thin film can be formed not only on one surface but also on both surfaces of a large-area single crystal oxide substrate.




SUMMARY OF THE INVENTION




It is therefore the object of the present invention is to provide a method of manufacturing a large-area, double-sided, high-temperature superconducting oxide thin film using a sputtering deposition technique by which a high-temperature superconducting oxide thin film of above 2 inches of diameter is formed on both surfaces of a large-area single crystal oxide substrate.




To achieve the object, the manufacturing method in accordance with the present invention comprises the steps of placing two high-temperature superconducting oxide of YBa


2


Cu


3


O


7−x


sintered material targets in a thin film deposition chamber, attaching a large-area single crystal oxide substrate of MgO, SrTiO


3


, LaAlO


3


, Al


2


O


3


, LaSrGaO


4


, which has 2-3 inches diameter, to a substrate supporter piercing through the separator of the thin film deposition chamber, having the large-area single crystal oxide substrate rotate, with the separator of the deposition chamber locating on its center-line, by the rotation of the substrate supporter, placing two substrate heaters toward both surfaces of the large-area single crystal oxide substrate and heating the large-area single crystal oxide substrate thereby, applying a voltage between the sintered material targets and the large-area single crystal oxide substrate, and depositing a high-temperature superconducting target material on both surfaces of the large-area single crystal oxide substrate by having the plasma generated from the two high-temperature superconducting targets contact thereon.











BRIEF DESCRIPTION OF THE DRAWINGS




The above object and other advantages of the present invention will become more apparent by describing in detail the preferred embodiment of the present invention with reference to the attached drawings in which:





FIG. 1

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two disk type sputtering targets perpendicular to the surface of the deposition substrate.





FIG. 2

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two disk type sputtering targets parallel to the surface of the deposition substrate.





FIG. 3

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two hollow cylinder type sputtering targets perpendicular to the surface of the deposition substrate.





FIG. 4

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two hollow cylinder type sputtering targets parallel to the surface of the deposition substrate.





FIG. 5

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two partially-hollow cylinder type sputtering targets, having hollow sides toward the substrate, perpendicular to the surface of the deposition substrate.





FIG. 6

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two partially-hollow cylinder type sputtering targets, having hollow sides toward the substrate, parallel to the surface of the deposition substrate.











Similar reference characters refer to similar parts in the several views of the drawings.




DETAILED DESCRIPTION OF THE INVENTION




Referring to appended drawings, detailed description of a method for manufacturing a large-area, double-sided, high-temperature oxide superconducting thin film in accordance with the embodiments of the present invention is now described.





FIG. 1

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two disk type sputtering targets perpendicular to the surface of the deposition substrate.




As illustrated in

FIG. 1

, the first embodiment of a method for manufacturing a large-area double-sided thin film in accordance with the present invention comprises the steps of placing two disk type sintered material targets


1


and


2


perpendicular to the surface of the large-area single crystal oxide substrate


6


in the thin film deposition chamber


11


, wherein the sintered material targets


1


and


2


comprise a high-temperature superconducting oxide material of Yba


2


CU


3


O


7−x


and the large-area single crystal oxide substrate


6


comprises oxide materials such as MgO, SrTiO


3


, LaAlO


3


, Al


2


O


3


, LaSrGaO


4


, attaching the large-area single crystal oxide substrate


6


to the rotational substrate supporter


5


piercing through the separator


9


and


10


of the deposition chamber, having the large-area single crystal oxide substrate


6


rotate, with the separator


9


and


10


of the deposition chamber locating on its center-line, by the rotation of the substrate supporter


5


, placing two substrate heaters


3


and


4


parallel with both surfaces of the large-area single crystal oxide substrate


6


to heat the large-area single crystal oxide substrate


6


at both sides, maintaining the temperature of the large-area single crystal oxide substrate


6


between 700° C. and 800° C. in which a crystal state of Yba


2


Cu


3


O


7−x


is formed, injecting sputtering gas into the thin film deposition chamber


11


to maintain the pressure between 100 mTorr and 300 mTorr, applying a sputtering power to the sintered material targets


1


and


2


, and generating plasmas


7


and


8


and depositing the target material on both surfaces of the large-area single crystal oxide substrate


6


thereby.





FIG. 2

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two disk type sputtering targets parallel to the surface of the deposition substrate.




As illustrated in

FIG. 2

, the second embodiment of the method for manufacturing a large-area double-sided thin film in accordance with the present invention comprises the steps of placing two disk type sintered material targets


1


and


2


parallel to the surface of the large-area single crystal oxide substrate


6


in the thin film deposition chamber


11


, wherein the sintered material targets


1


and


2


comprise a high-temperature superconducting oxide material of YBa


2


Cu


3


O


7−x


and the large-area single crystal oxide substrate


6


comprises oxide materials such as MgO, SrTiO


3


, LaAlO


3


, Al


2


O


3


, LaSrGaO


4


, attaching the large-area single crystal oxide substrate


6


to the rotational substrate supporter


5


piercing through the separator


9


and


10


of the deposition chamber, having the large-area single crystal oxide substrate


6


rotate, with the separator


9


and


10


of the deposition chamber locating on its center-line, by the rotation of the substrate supporter


5


, placing two substrate heaters


3


and


4


parallel with both surfaces of the large-area single crystal oxide substrate


6


to heat the large-area single crystal oxide substrate


6


at both sides, maintaining the temperature of the large-area single crystal oxide substrate


6


between 700° C. and 800° C. in which a crystal state of YBa


2


Cu


3


O


7−x


is formed, injecting sputtering gas into the thin film deposition chamber


11


to maintain the pressure between 100 mTorr and 300 mTorr, applying a sputtering power to the sintered material targets


1


and


2


, and generating plasmas


7


and


8


and depositing the target material on both surfaces of the large-area single crystal oxide substrate


6


thereby.





FIG. 3

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two hollow cylinder type sputtering targets perpendicular to the surface of the deposition substrate.




As illustrated in

FIG. 3

, the third embodiment of the method for manufacturing a large-area double-sided thin film in accordance with the present invention comprises the steps of placing two hollow cylinder type sintered material targets


1


and


2


perpendicular to the surface of the large-area single crystal oxide substrate


6


in the thin film deposition chamber


11


, wherein the sintered material targets


1


and


2


comprise a high-temperature superconducting oxide material of YBa


2


Cu


3


O


7−x


and the large-area single crystal oxide substrate


6


comprises oxide materials such as MgO, SrTiO


3


, LaAlO


3


, Al


2


O


3


, LaSrGaO


4


, attaching the large-area single crystal oxide substrate


6


to the rotational substrate supporter


5


piercing through the separator


9


and


10


of the deposition chamber, having the large-area single crystal oxide substrate


6


rotate, with the separator


9


and


10


of the deposition chamber locating on its center-line, by the rotation of the substrate supporter


5


, placing two substrate heaters


3


and


4


parallel with both surfaces of the large-area single crystal oxide substrate


6


to heat the large-area single crystal oxide substrate


6


at both sides, maintaining the temperature of the large-area single crystal oxide substrate


6


between 700° C. and 800° C. in which a crystal state of YBa


2


Cu


3


O


7−x


is formed, injecting sputtering gas into the thin film deposition chamber


11


to maintain the pressure between 100 mTorr and 300 mTorr, applying a sputtering power to the sintered material targets


1


and


2


, and generating plasmas


7


and


8


and depositing the target material on both surfaces of the large-area single crystal oxide substrate


6


thereby.





FIG. 4

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two hollow cylinder type sputtering targets parallel to the surface of the deposition substrate.




As illustrated in

FIG. 4

, the fourth embodiment of the method for manufacturing a large-area double-sided thin film in accordance with the present invention comprises the steps of placing two hollow cylinder type sintered material targets


1


and


2


parallel to the surface of the large-area single crystal oxide substrate


6


in the thin film deposition chamber


11


, wherein the sintered material targets


1


and


2


comprise a high-temperature superconducting oxide material of YBa


2


Cu


3


O


7−x


and the large-area single crystal oxide substrate


6


comprises oxide materials such as MgO, SrTiO


3


, LaAlO


3


, Al


2


O


3


, LaSrGaO


4


, attaching the large-area single crystal oxide substrate


6


to the rotational substrate supporter


5


piercing through the separator


9


and


10


of the deposition chamber, having the large-area single crystal oxide substrate


6


rotate, with the separator


9


and


10


of the deposition chamber locating on its center-line, by the rotation of the substrate supporter


5


, placing two substrate heaters


3


and


4


parallel to both surfaces of the large-area single crystal oxide substrate


6


to heat the large-area single crystal oxide substrate


6


at both sides, maintaining the temperature of the large-area single crystal oxide substrate


6


between 700° C. and 800° C. in which a crystal state of YBa


2


Cu


3


O


7−x


is formed, injecting sputtering gas into the thin film deposition chamber


11


to maintain the pressure between 100 mTorr and 300 mTorr, applying a sputtering power to the sintered material targets


1


and


2


, and generating plasmas


7


and


8


and depositing the target material on both surfaces of the large-area single crystal oxide substrate


6


thereby.





FIG. 5

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two partially-hollow cylinder type sputtering targets, having hollow sides toward the substrate, perpendicular to the surface of the deposition substrate.




As illustrated in

FIG. 5

, the fifth embodiment of the method for manufacturing a large-area double-sided thin film in accordance with the present invention comprises the steps of placing two partially-hollow cylinder type sputtering targets


1


and


2


having hollow sides toward the substrate, perpendicular to the surface of the large-area single crystal oxide substrate


6


in the thin film deposition chamber


11


, wherein the sintered material targets


1


and


2


comprise a high-temperature superconducting oxide material of YBa


2


Cu


3


O


7−x


and the large-area single crystal oxide substrate


6


comprises oxide materials such as MgO, SrTiO


3


, LaAlO


3


, Al


2


O


3


, LaSrGaO


4


, attaching the large-area single crystal oxide substrate


6


to the rotational substrate supporter


5


piercing through the separator


9


and


10


of the deposition chamber, having the large-area single crystal oxide substrate


6


rotate, with the separator


9


and


10


of the deposition chamber locating on its center-line, by the rotation of the substrate supporter


5


, placing two substrate heaters


3


and


4


parallel to both surfaces of the large-area single crystal oxide substrate


6


to heat the large-area single crystal oxide substrate


6


at both sides, maintaining the temperature of the large-area single crystal oxide substrate


6


between 700° C. and 800° C. in which a crystal state of YBa


2


Cu


3


O


7−x


is formed, injecting sputtering gas into the thin film deposition chamber


11


to maintain the pressure between 100 mTorr and 300 mTorr, applying a sputtering power to the sintered material targets


1


and


2


, and generating plasmas


7


and


8


and depositing the target material on both surfaces of the large-area single crystal oxide substrate


6


thereby.





FIG. 6

is a view illustrating a method of depositing a large-area, double-sided, high-temperature superconducting oxide thin film by placing two partially-hollow cylinder type sputtering targets, having hollow sides toward the substrate, parallel to the surface of the deposition substrate.




As illustrated in

FIG. 6

, the sixth embodiment of the method for manufacturing a large-area double-sided thin film in accordance with the present invention comprises the steps of placing two partially-hollow cylinder type sputtering targets


1


and


2


having hollow sides toward the substrate, parallel to the surface of the large-area single crystal oxide substrate


6


in the thin film deposition chamber


11


, wherein the sintered material targets


1


and


2


comprise a high-temperature superconducting oxide material of YBa


2


Cu


3


O


7−x


and the large-area single crystal oxide substrate


6


comprises oxide materials such as MgO, SrTiO


3


, LaAlO


3


, Al


2


O


3


, LaSrGaO


4


, attaching the large-area single crystal oxide substrate


6


to the rotational substrate supporter


5


piercing through the separator


9


and


10


of the deposition chamber, having the large-area single crystal oxide substrate


6


rotate, with the separator


9


and


10


of the deposition chamber locating on its center-line, by the rotation of the substrate supporter


5


, placing two substrate heaters


3


and


4


parallel to both surfaces of the large-area single crystal oxide substrate


6


to heat the large-area single crystal oxide substrate


6


at both sides, maintaining the temperature of the large-area single crystal oxide substrate


6


between 700° C. and 800° C. in which a crystal state of YBa


2


CU


3


O


7−x


is formed, injecting sputtering gas into the thin film deposition chamber


11


to maintain the pressure between 100 mTorr and 300 mTorr, applying a sputtering power to the sintered material targets


1


and


2


, and generating plasmas


7


and


8


and depositing the target material on both surfaces of the large-area single crystal oxide substrate.




Depending on the sintered material target shape and configuration, large area thin film deposition rate is quite different.




In the case of sintered material target shape, large area thin film deposition rates increase in regular sequence of the disk, hollow cylinder, and partially hollow cylinder.




Also, In the case of sintered material target configuration for generating a perpendicular (

FIGS. 1

,


3


and


5


) and parallel (

FIGS. 2

,


4


and


6


) plasma with respect to the single crystal oxide substrate.




Large area thin film deposition rate by using a parallel plasma is higher than the perpendicular plasma configuration.




Accordingly, a large-area, double-sided, high-temperature superconducting oxide thin film can be obtained by the method of manufacturing the thin film deposition in accordance with the present invention.




Since those having ordinary knowledge and skill in the art of the present invention will recognize additional modifications and applications within the scope thereof. the present invention is not limited to the embodiments and drawings described above.



Claims
  • 1. A method of manufacturing a double-sided high-temperature superconducting oxide thin film, comprising the steps of:placing two sintered material targets in a thin film deposition chamber; attaching a single crystal oxide substrate to a substrate supporter piercing through a separator of the thin film deposition chamber; rotating said single crystal oxide substrate; placing two substrate heaters toward both surfaces of said single crystal oxide substrate, and heating said single crystal oxide substrate thereby, applying a power to sputter to said sintered material targets; and depositing a target material on both surfaces of said single crystal oxide substrate by having plasma generated from said two sintered material targets contact thereon.
  • 2. The method of manufacturing a double-sided high-temperature superconducting oxide thin film as claimed in claim 1, wherein said single crystal oxide substrate is any one selected from the group consisting of MgO, SrTiO3, LaAlO3, Al2O3 and LaSrGaO4.
  • 3. The method of manufacturing a double-sided high-temperature superconducting oxide thin film as claimed in claim 1, wherein said sintered material targets are placed perpendicularly to both surfaces of said single crystal oxide substrate.
  • 4. The method of manufacturing a double-sided high-temperature superconducting oxide thin film as claimed in claim 1, wherein said sintered material targets are placed parallel with both surfaces of said single crystal oxide substrate.
  • 5. The method of manufacturing a double-sided high-temperature superconducting oxide thin film as claimed in claim 1, wherein said sintered material targets are any one type selected from the group consisting of a disk type, hollow cylinder type and partially-hollow cylinder type having hollow sides toward both surfaces of said crystal oxide substrate.
  • 6. The method of manufacturing a double-sided high-temperature superconducting oxide thin film as claimed in claim 1, wherein said substrate heaters are placed parallel with both surfaces of said single crystal oxide substrate.
Priority Claims (1)
Number Date Country Kind
98-50207 Nov 1998 KR
US Referenced Citations (5)
Number Name Date Kind
4828664 Dietrich et al. May 1989
4866032 Fujimori et al. Sep 1989
5126318 Gavaler et al. Jun 1992
5140004 Tanaka et al. Aug 1992
5196400 Chen et al. Mar 1993
Non-Patent Literature Citations (3)
Entry
H. Koch et al., Hollow cathode discharge sputtering device for uniform large area thin film deposition, Jul. 1991, pp. 2374-2377.
Th. Schurig et al., Large area YBCO thin film deposition using linear hollow cathode discharge sputtering, Physica C 262 (1996), pp. 89-97.
R.A. Rao et al., Uniform deposition of Yba2Cu3O7 thin films over an 8 inch diameter area by a 90° off-axis sputtering technique, Appl. Phys. Lett. Dec. 16, 1996, pp. 3911-3913.