BRIEF DESCRIPTION OF THE DRAWINGS
The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:
FIGS. 1A and 1B are process-by-process sectional views for explaining a semiconductor device manufacturing method according to the prior art;
FIG. 2 is a ternary phase diagram of W—Si—N; and
FIGS. 3A and 3B are process-by-process sectional views for explaining a semiconductor device manufacturing method in accordance with a preferred embodiment of the present invention.