METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

A method for manufacturing a semiconductor device, includes: a) spraying a combusted gas onto a member containing a metal element, the combusted gas being obtained by combusting a mixed gas that at least includes a gas containing a hydrogen atom and an oxygen gas;b) spraying the combusted gas onto the amorphous semiconductor film placed on a substrate having an insulating surface thereof; andc) adding the metal element to at least a vicinity of a surface of the amorphous semiconductor film to enhance recrystallization of a semiconductor.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanying drawings, wherein like numbers reference like elements.

FIG. 1 is a diagram showing a gas burner used in embodiments.

FIG. 2 is a diagram showing the outline of a heating device using the gas burner.

FIGS. 3A to 3C are diagrams showing a first embodiment of the invention.

FIG. 4 is a diagram showing the first embodiment of the invention.

FIG. 5 is a diagram showing the first embodiment of the invention.

FIG. 6 is a diagram showing a second embodiment of the invention.

FIG. 7 is a diagram showing a third embodiment of the invention.

FIG. 8 is a diagram showing a fourth embodiment of the invention.

FIGS. 9A to 9D are diagrams showing a method for manufacturing a semiconductor device.

Claims

1. A method for manufacturing a semiconductor device, comprising: a) spraying a combusted gas onto a member containing a metal element, the combusted gas being obtained by combusting a mixed gas that at least includes a gas containing a hydrogen atom and an oxygen gas;b) spraying the combusted gas onto the amorphous semiconductor film placed on a substrate having an insulating surface thereof; andc) adding the metal element to at least a vicinity of a surface of the amorphous semiconductor film to enhance re-crystallization of a semiconductor.

2. The method for manufacturing a semiconductor device according to claim 1, further comprising: d) modifying the amorphous semiconductor film into a polycrystalline semiconductor film by heating the amorphous semiconductor film with the metal element added.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the mixed gas is a gas having a hydrogen gas and an oxygen gas mixed with a ratio of nearly two to one.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the metal element is nickel.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the member is net-shaped.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the step d) includes; spraying a combusted gas onto the amorphous semiconductor film.

7. The method for manufacturing a semiconductor device according to claim 1, further comprising: e) forming a semiconductor oxide film containing the metal element by oxidizing a surface of the polycrystalline semiconductor film with the metal element added; andf) selectively removing the semiconductor oxide film.

8. The method for manufacturing a semiconductor device according to claim 7, wherein the step e) includes; spraying a combusted gas onto the amorphous semiconductor film.

9. The method for manufacturing a semiconductor device according to claim 8, wherein the combusted gas is a gas obtained by mixing and combusting a hydrogen gas and an oxygen gas in such a ratio that the oxygen gas is greater than one-half of the hydrogen gas.

10. The method for manufacturing a semiconductor device according to claim 1, wherein a direction of spraying the combusted gas is substantially identical to a gravitational direction.

11. The method for manufacturing a semiconductor device according to claim 1, wherein the combusted gas is sprayed substantially evenly within a long square having a length in a longitudinal direction greater than a width of the substrate on a surface perpendicular to a spraying direction, the substrate being located on the surface, the substrate and the combusted gas moving relatively to each other at constant speed.

12. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor is silicon.