Claims
- 1. A method for monitoring microhole growth while producing a substrate having microholes with a predetermined diameter, comprising:
- irradiating a first region on the substrate with an interrupted beam producing a given dosage of heavy ions of a given type and energy to produce individual nuclear traces in the first region;
- irradiating a separate second region on the substrate with a dosage of ions higher than the given dosage to produce a bundle of nuclear traces in the second region, the second region serving as a test region and being irradiated with ions of the same type and energy as the ions used to produce the individual nuclear traces in the first region so that the second region can subsequently be employed for monitoring;
- jointly etching the first and second regions under the same etching conditions for both;
- monitoring the progress of the etching in the first region by observing the second region to detect a macroscopic change visible to the naked eye in the second region, said macroscopic change having previously been calibrated so that microholes originating from the individual nuclear traces in the first region have attained the predetermined diameter when the macroscopic change in the second region occurs; and
- discontinuing the etching process when the macroscopic change in the second region occurs in order to obtain microholes having the predetermined diameter in the first region.
- 2. The method of claim 1, wherein the step of irradiating the first region and the step of irradiating a separate second region on the substrate are conducted by irradiating one of a band-shaped sheet and a foil.
- 3. The method of claim 1, wherein the step of monitoring the progress of the etching comprises at least one of visually observing the second region to observe a macroscopic optical change and electrically monitoring the second region to detect a macroscopic change in the insulating properties thereof.
- 4. The method of claim 1, wherein the step of irradiating a separate second region is conducted simultaneously with the step of irradiating the first region.
- 5. The method of claim 1, further comprising the step of adjusting at least one of the ion density on the second region and the etching process so that said macroscopic change occurs when the second region reaches a porosity of P.apprxeq.0.7, the microholes originating from the individual nuclear traces in the first region having attained the predetermined diameter when the second region has a porosity of P.apprxeq.0.7.
- 6. The method of claim 1, further comprising the step of adjusting at least one of the ion density on the second region and the etching process so that said macroscopic change occurs when the second region reaches a porosity of P.apprxeq.1.0, the microholes originating from the individual traces in the first region having attained the predetermined diameter when the second region has a porosity of P.apprxeq.1.0.
- 7. The method of claim 1, wherein the step of monitoring the progress of the etching comprises monitoring the etching progress to observe a macroscopic change provided by the development of ring holes in the second region.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3337227 |
Oct 1984 |
DEX |
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Parent Case Info
This application is a continuation of application Ser. No. 661,246, filed Oct. 15, 1984, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (1)
Number |
Date |
Country |
2717400 |
Oct 1978 |
DEX |
Continuations (1)
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Number |
Date |
Country |
Parent |
661246 |
Oct 1984 |
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