METHOD FOR MONITORING PROBE CONDITION, TEST SYSTEM, COMPUTER DEVICE, AND STORAGE MEDIUM

Abstract

The present disclosure relates to a method for monitoring a probe condition, a test system, a computer device, and a storage medium. The method for monitoring a probe condition includes: acquiring test data of a sensitive test parameter which is obtained by a probe under a preset needle depth, wherein the sensitive test parameter is a test parameter sensitive to a contact resistance between the probe and a structure under test; and monitoring a condition of the probe according to the test data of the sensitive test parameter.

Description

Claims

1. A method for monitoring a probe condition, comprising: acquiring test data of a sensitive test parameter which is obtained by a probe under a preset needle depth, wherein the sensitive test parameter is a test parameter sensitive to a contact resistance between the probe and a structure under test; andmonitoring a condition of the probe according to the test data of the sensitive test parameter.

2. The method for monitoring the probe condition according to claim 1, wherein before the acquiring test data of a sensitive test parameter which is obtained by a probe under a preset needle depth, the method further comprises: determining the sensitive test parameter from a plurality of different test parameters.

3. The method for monitoring the probe condition according to claim 2, wherein the determining the sensitive test parameter from a plurality of different test parameters comprises: acquiring test data under different needle depths for each of the test parameters;acquiring a variation of the test data of each test parameter over the needle depth according to the test data of each test parameter under the different needle depths; andselecting the sensitive test parameter from the test parameters according to the variation of the test data of each test parameter over the needle depth.

4. The method for monitoring the probe condition according to claim 3, wherein the step of acquiring test data under different needle depths for each of the test parameters comprises: selecting a plurality of structures under test and a plurality of test probes corresponding to the structures under test; andsetting a plurality of needle depths, and acquiring, under each needle depth, test data of each test parameter of each structure under test.

5. The method for monitoring the probe condition according to claim 4, wherein the setting a plurality of needle depths, and acquiring, under each needle depth, test data of each test parameter of each structure under test comprises: setting an initial needle depth, and acquiring test data of each test parameter under the initial needle depth; andgradually increasing the needle depth to a critical needle depth, and acquiring test data of each test parameter under each corresponding needle depth.

6. The method for monitoring the probe condition according to claim 5, wherein the initial needle depth is 1 µm to 5 µm, and the critical needle depth is 95 µm to 100 µm.

7. The method for monitoring the probe condition according to claim 1, wherein the acquiring test data of a sensitive test parameter which is obtained by a probe under a preset needle depth comprises: acquiring the test data of the sensitive test parameter obtained by a plurality of probes under the preset needle depth.

8. The method for monitoring the probe condition according to claim 7, wherein the plurality of probes are used for testing the structure under test on a same wafer or a same batch of wafers.

9. The method for monitoring the probe condition according to claim 1, wherein the monitoring a condition of the probe according to the test data of the sensitive test parameter comprises: acquiring probe condition corresponding to abnormal test data according to the test data of the sensitive test parameter; anddetermining that a probe is abnormal when abnormal test data corresponding to the probe is greater than a preset amount, wherein the preset amount is a positive integer greater than 1.

10. The method for monitoring the probe condition according to claim 9, wherein after the determining that a probe is abnormal when abnormal test data corresponding to the probe is greater than a preset amount, the method further comprises: controlling to clean the abnormal probe.

11. The method for monitoring the probe condition according to claim 1, wherein after the acquiring test data of a sensitive test parameter which is obtained by testing a structure under test by a plurality of probes under a preset needle depth, the method further comprises: displaying the test data of the sensitive test parameter.

12. A test system, comprising: a prober, comprising a probe card, wherein a plurality of probes are provided on the probe card;a tester, electrically connected to the probe card to test a structure under test by using the probe on the probe card; anda monitoring apparatus, electrically connected to the tester to acquire test data of a sensitive test parameter which is obtained by testing the structure under test by the plurality of probes under a preset needle depth, and monitor a condition of each of the probes according to the test data of the sensitive test parameter, wherein the sensitive test parameter is a test parameter sensitive to a contact resistance between the probe and the structure under test.

13. The test system according to claim 12, wherein the monitoring apparatus comprises: a display screen, configured to display the test data of the sensitive test parameter.

14. A computer device, comprising a memory cell and a processing unit, wherein the memory cell stores a computer program, and the computer program is executed by the processing unit to implement the steps of the method according to claim 1.

15. A computer-readable storage medium, storing a computer program, wherein the computer program is executed by a processing unit to implement the steps of the method according to claim 1.